CN101958259B - 通过添加铜对焊料互连的改善 - Google Patents

通过添加铜对焊料互连的改善 Download PDF

Info

Publication number
CN101958259B
CN101958259B CN201010226969.2A CN201010226969A CN101958259B CN 101958259 B CN101958259 B CN 101958259B CN 201010226969 A CN201010226969 A CN 201010226969A CN 101958259 B CN101958259 B CN 101958259B
Authority
CN
China
Prior art keywords
layer
copper
bump
nickel dam
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010226969.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN101958259A (zh
Inventor
M·A·巴克曼
J·W·奥森巴赫
K·V·德赛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies North America Corp filed Critical Infineon Technologies North America Corp
Publication of CN101958259A publication Critical patent/CN101958259A/zh
Application granted granted Critical
Publication of CN101958259B publication Critical patent/CN101958259B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/098—Applying pastes or inks, e.g. screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07255—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H10W72/223—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core characterised by the structure of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H10W72/2528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
CN201010226969.2A 2009-07-13 2010-07-12 通过添加铜对焊料互连的改善 Active CN101958259B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/501,686 US8378485B2 (en) 2009-07-13 2009-07-13 Solder interconnect by addition of copper
US12/501,686 2009-07-13

Publications (2)

Publication Number Publication Date
CN101958259A CN101958259A (zh) 2011-01-26
CN101958259B true CN101958259B (zh) 2014-09-03

Family

ID=43027609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010226969.2A Active CN101958259B (zh) 2009-07-13 2010-07-12 通过添加铜对焊料互连的改善

Country Status (6)

Country Link
US (2) US8378485B2 (https=)
EP (1) EP2276063A3 (https=)
JP (1) JP5604665B2 (https=)
KR (1) KR101704030B1 (https=)
CN (1) CN101958259B (https=)
TW (1) TWI394632B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110709984A (zh) * 2017-10-30 2020-01-17 美光科技公司 三维度互连(3di)焊料杯

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper
CN103180944A (zh) * 2010-10-25 2013-06-26 松下电器产业株式会社 电子元件的接合方式
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
US8889995B2 (en) 2011-03-03 2014-11-18 Skyworks Solutions, Inc. Wire bond pad system and method
WO2012118896A2 (en) * 2011-03-03 2012-09-07 Skyworks Solutions, Inc. Apparatus and methods related to wire bond pads and reducing impact of high rf loss plating
US8686537B2 (en) 2011-03-03 2014-04-01 Skyworks Solutions, Inc. Apparatus and methods for reducing impact of high RF loss plating
KR101108548B1 (ko) * 2011-07-12 2012-01-30 김진철 이어폰 케이블 권취기구
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US9099396B2 (en) 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
US20130241058A1 (en) * 2012-03-16 2013-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Wire Bonding Structures for Integrated Circuits
JP5893800B2 (ja) 2012-06-14 2016-03-23 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. パワーアンプモジュールを含む関連するシステム、デバイス、および方法
US10496977B2 (en) 2012-07-16 2019-12-03 Square, Inc. Storing and forwarding payment transactions
JP5893528B2 (ja) * 2012-07-27 2016-03-23 新日鉄住金マテリアルズ株式会社 無鉛はんだバンプ接合構造
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2014146652A (ja) * 2013-01-28 2014-08-14 Toppan Printing Co Ltd 配線基板およびその製造方法
US9299680B2 (en) 2013-03-14 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure having dies with connectors
JP6046010B2 (ja) * 2013-09-09 2016-12-14 株式会社東芝 半導体装置及びその製造方法
US9723716B2 (en) * 2013-09-27 2017-08-01 Infineon Technologies Ag Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
CN106030783B (zh) * 2014-03-27 2019-06-18 英特尔公司 用于低温附接的混合互连
JP6281468B2 (ja) 2014-10-30 2018-02-21 トヨタ自動車株式会社 半導体装置とその製造方法
JP6287759B2 (ja) * 2014-10-30 2018-03-07 トヨタ自動車株式会社 半導体装置とその製造方法
US9881302B1 (en) 2014-12-11 2018-01-30 Square, Inc. Intelligent payment capture in failed authorization requests
US9576922B2 (en) 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
DE102016103585B4 (de) * 2016-02-29 2022-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt
JP6729331B2 (ja) * 2016-11-30 2020-07-22 富士通株式会社 電子装置及び電子装置の製造方法
KR102075681B1 (ko) 2018-11-16 2020-02-11 박민호 이어폰 전선 꼬임 방지장치
CN110682021B (zh) * 2019-11-11 2021-08-03 重庆理工大学 一种抑制界面imc生长的微焊点的制备方法
KR102837298B1 (ko) 2020-12-22 2025-07-23 삼성전자주식회사 반도체 패키지 및 그 제조 방법
WO2023123116A1 (zh) 2021-12-29 2023-07-06 京东方科技集团股份有限公司 线路板、功能背板、背光模组、显示面板及显示装置
US12581596B2 (en) * 2021-12-31 2026-03-17 Boe Technology Group Co., Ltd. Wiring board, functional backplane and method for manufacturing the same
CN116965159A (zh) 2022-02-24 2023-10-27 京东方科技集团股份有限公司 线路板及其制造方法、功能背板、背光模组、显示装置
US12610675B2 (en) 2022-04-21 2026-04-21 Boe Technology Group Co., Ltd. Circuit board, light-emitting substrate, backlight module, display panel and display device
US12457685B2 (en) 2022-10-31 2025-10-28 Beijing Boe Technology Development Co., Ltd. Circuit board, light-emitting substrate, backlight module, and display apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211878A (zh) * 2006-12-28 2008-07-02 国际商业机器公司 互连结构及其形成方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545923A (en) * 1993-10-22 1996-08-13 Lsi Logic Corporation Semiconductor device assembly with minimized bond finger connections
US5466635A (en) * 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
JP3060896B2 (ja) * 1995-05-26 2000-07-10 日本電気株式会社 バンプ電極の構造
US5918794A (en) * 1995-12-28 1999-07-06 Lucent Technologies Inc. Solder bonding of dense arrays of microminiature contact pads
US5667132A (en) * 1996-04-19 1997-09-16 Lucent Technologies Inc. Method for solder-bonding contact pad arrays
US5891756A (en) * 1997-06-27 1999-04-06 Delco Electronics Corporation Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby
TW453137B (en) * 1997-08-25 2001-09-01 Showa Denko Kk Electrode structure of silicon semiconductor device and the manufacturing method of silicon device using it
US6013713A (en) * 1997-11-06 2000-01-11 International Business Machines Corporation Electrode modification using an unzippable polymer paste
JP3968554B2 (ja) * 2000-05-01 2007-08-29 セイコーエプソン株式会社 バンプの形成方法及び半導体装置の製造方法
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
US6348399B1 (en) * 2000-07-06 2002-02-19 Advanced Semiconductor Engineering, Inc. Method of making chip scale package
US20020086520A1 (en) * 2001-01-02 2002-07-04 Advanced Semiconductor Engineering Inc. Semiconductor device having bump electrode
JP4656275B2 (ja) 2001-01-15 2011-03-23 日本電気株式会社 半導体装置の製造方法
US6689680B2 (en) * 2001-07-14 2004-02-10 Motorola, Inc. Semiconductor device and method of formation
JP2003045908A (ja) 2001-08-01 2003-02-14 Toshiba Corp 半導体装置とその製造方法
TW540276B (en) * 2001-12-28 2003-07-01 Univ Nat Central Solder point with low speed of consuming nickel
JP2003303842A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置およびその製造方法
US20030219623A1 (en) * 2002-05-21 2003-11-27 Kao Cheng Heng Solder joints with low consumption rate of nickel layer
DE10241589B4 (de) * 2002-09-05 2007-11-22 Qimonda Ag Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern
US7081372B2 (en) * 2003-07-09 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Aluminum cap with electroless nickel/immersion gold
US7186645B2 (en) * 2003-10-13 2007-03-06 Intel Corporation Selective plating of package terminals
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
JP4305430B2 (ja) * 2005-08-24 2009-07-29 ソニー株式会社 部品実装方法および部品実装体
DE102005055488A1 (de) 2005-11-18 2007-01-04 Infineon Technologies Ag Elektronische Struktur mit mehreren elektronischen Komponenten und Verfahren zu ihrer Herstellung
US20070238283A1 (en) * 2006-04-05 2007-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Novel under-bump metallization for bond pad soldering
JP4597940B2 (ja) * 2006-10-26 2010-12-15 富士通セミコンダクター株式会社 外部接続端子
WO2009013826A1 (ja) 2007-07-25 2009-01-29 Fujitsu Microelectronics Limited 半導体装置
JP4547411B2 (ja) * 2007-10-05 2010-09-22 富士通株式会社 半導体装置、及び半導体装置の製造方法
JP2010040691A (ja) * 2008-08-04 2010-02-18 Ebara Corp 鉛フリーバンプ形成方法
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211878A (zh) * 2006-12-28 2008-07-02 国际商业机器公司 互连结构及其形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110709984A (zh) * 2017-10-30 2020-01-17 美光科技公司 三维度互连(3di)焊料杯
CN110709984B (zh) * 2017-10-30 2020-11-03 美光科技公司 三维度互连(3di)焊料杯
US10964654B2 (en) 2017-10-30 2021-03-30 Micron Technology Inc. 3DI solder cup
US11532578B2 (en) 2017-10-30 2022-12-20 Micron Technology, Inc. 3DI solder cup

Also Published As

Publication number Publication date
CN101958259A (zh) 2011-01-26
KR20110006615A (ko) 2011-01-20
JP2011023721A (ja) 2011-02-03
US8580621B2 (en) 2013-11-12
KR101704030B1 (ko) 2017-02-07
TWI394632B (zh) 2013-05-01
EP2276063A3 (en) 2011-04-20
US8378485B2 (en) 2013-02-19
EP2276063A2 (en) 2011-01-19
TW201107071A (en) 2011-03-01
US20110006415A1 (en) 2011-01-13
JP5604665B2 (ja) 2014-10-08
US20130149857A1 (en) 2013-06-13

Similar Documents

Publication Publication Date Title
CN101958259B (zh) 通过添加铜对焊料互连的改善
JP5099644B2 (ja) 電子部品、半導体パッケージ及び電子機器
KR101344553B1 (ko) 구리 필러 범프 상의 금속간 화합물의 접착을 위한 방법 및 구조
JP4195886B2 (ja) 無鉛はんだを用い反応バリア層を有するフリップ・チップ用相互接続構造を形成するための方法
US9607936B2 (en) Copper bump joint structures with improved crack resistance
TWI452657B (zh) 用於改良耐脆裂性之焊接方法及相關裝置
JP4431606B2 (ja) 半導体装置、半導体装置の実装方法、および半導体装置の実装構造
KR20030067590A (ko) 반도체소자와 그 제조방법 및 반도체장치와 그 제조방법
CN103855116A (zh) 电子部件、包括它的电子装置及电子装置的制造方法
US12330243B2 (en) Method of forming an intermetallic phase layer with a plurality of nickel particles
TWI242866B (en) Process of forming lead-free bumps on electronic component
JP2001298051A (ja) はんだ接続部
TWI302722B (en) Ubm pad, solder contact and methods for creating a solder joint
JP2001060760A (ja) 回路電極およびその形成方法
WO2007097508A1 (en) Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same
US20090020871A1 (en) Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of fabricating the same
JP3988710B2 (ja) 金属電極を用いた接合方法
CN1509136A (zh) 具有电镀焊锡的微焊垫间距有机电路板及制造方法
TW200534447A (en) Bump and the fabricating method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160721

Address after: Singapore Singapore

Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd.

Address before: California, USA

Patentee before: LSI Corp.