TWI391460B - Adhesive film, and circuit structure of the connection structure and connection method - Google Patents

Adhesive film, and circuit structure of the connection structure and connection method Download PDF

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Publication number
TWI391460B
TWI391460B TW096142672A TW96142672A TWI391460B TW I391460 B TWI391460 B TW I391460B TW 096142672 A TW096142672 A TW 096142672A TW 96142672 A TW96142672 A TW 96142672A TW I391460 B TWI391460 B TW I391460B
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TW
Taiwan
Prior art keywords
adhesive layer
connection terminal
adhesive film
conductive
connection
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Application number
TW096142672A
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English (en)
Other versions
TW200842173A (en
Inventor
Katsuhiko Tomisaka
Jun Taketatsu
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Publication of TW200842173A publication Critical patent/TW200842173A/zh
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Publication of TWI391460B publication Critical patent/TWI391460B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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Description

黏著薄膜、以及電路構件之連接構造及連接方法
本發明係關於黏著薄膜、以及電路構件之連接構造及連接方法。
藉由玻璃覆晶封裝(Chip-On-Glass,COG)或軟板承載晶片封裝(Chip-On-Flex,COF)等而封裝液晶驅動用IC於液晶顯示用玻璃面板。COG封裝係使用含導電粒子之黏著薄膜，直接黏合液晶驅動用IC於玻璃面板上。COF封裝係黏合液晶驅動用IC於具有金屬配線之撓性帶，使用含導電粒子之黏著薄膜，黏合此等於玻璃面板。
相對於此，隨著近年來液晶顯示的高精細化，液晶驅動用IC之電極之金凸塊係腳距狹小化，面積狹小化。因此，傳統之黏著薄膜有電路連接構件中之導電粒子流出於鄰接電極(連接端子)間，而發生短路等之問題。另外，為避免短路，減少黏著薄膜中之導電粒子數時，凸塊/面板間所捕捉之黏著薄膜中之導電粒子數減少，該結果係電路間之連接電阻上升，發生連接不良之問題。
因此，作為解決此等問題之方法，開發黏接薄膜之至少單面上形成絕緣性黏著層，防止COG封裝或COF封裝之接合品質降低之方法( 例如參考專利文獻1)、或控制黏著薄膜於加熱加壓時之流動性，確保凸塊/面板間所捕捉之導電粒子數之方法(例如參考專利文獻2)。
專利文獻1：特開平8-279371號公報
專利文獻2：特開2002-201450號公報
發明之揭示
然而，於黏著薄膜之單面上形成絕緣性黏著層之方法中，凸塊面積小，例如未滿3000μm2 時，為得到安定的連接電阻而增加導電粒子數時，對相鄰電路電極間之絕緣性仍有改良的空間。另外，控制黏著薄膜之加熱加壓時之流動性之方法中，封裝液晶驅動用IC於液晶顯示用玻璃面板時，就防止因加熱加壓後之黏著薄膜硬化物之儲存彈性率變高所發生之面板反翹上，仍留有改良的空間。
因此，本發明係有鑑於上述情況而實施者，以提供可得到對COG封裝或COF封裝之低電阻電性連接，而且，充分防止封裝液晶驅動用IC於液晶顯示用玻璃面板後之面板反翹之黏著薄膜，以及使用其之電路構件之連接方法及連接構造為目的。
本發明係提供層合含有導電粒子之導電性黏著層與絕緣性黏著層，於層合方向以規定條件加熱加壓後之硬化之絕緣性黏著層之主面面積C除以硬化之導電性黏著層之主面面積D之值C/D為1.2~3.0之黏著薄膜。
依據本發明之黏著薄膜，可得到對COG封裝或COF封裝之低電阻電性連接，而且，充分防止封裝液晶驅動用IC於液晶顯示用玻璃面板後之面板反翹，及鄰接電極間發生短路。
藉由本發明之黏著薄膜可達成上述目的之理由雖未明朗，但認為至少起因於上述C/D值係於上述範圍者。另外，C/D值係顯示絕緣性黏著層之流動性及導電性黏著層之流動性差異之指標。
C/D值於上述數值範圍內，與此值未滿1.2時比較，絕緣性黏著層之流動性對導電性黏著層之流動性變高。
於如此之本發明之黏著薄膜中，加熱加壓時絕緣性黏著層比導電性黏著層優先流動。因此，於電路連接時，電路基板上之電路電極彼此間之空隙容易充填絕緣性黏著層，可容易防止導電性黏著劑層中之導電粒子流入於此空隙中，認為可充分防止鄰接電極間發生短路。
另外，若防止導電性黏著劑層中之導電粒 子流入於上述空隙中，認為使連接之電路電極間所捕捉之導電粒子數變多，可容易得到低電阻之電性連接。
另外，C/D值於上述數值範圍內，與此值超過3.0時比較，絕緣性黏著層之流動性對導電性黏著層之流動性不會變得過高。認為藉此可同時達成電路電極彼此間之良好導通特性及黏著性，可維持黏著薄膜之高信賴性。
另外，所謂上述規定條件係指以2片玻璃板包夾本發明之黏著薄膜之狀態，以160℃，2MPa加熱加壓10秒鐘之條件。
絕緣性黏著層係以含有雙酚F型苯氧樹脂為宜，導電性黏著層係以含有至少一種選自雙酚A型苯氧樹脂及雙酚A‧F共聚合型苯氧樹脂所成群之樹脂為宜。藉此可高度地控制絕緣性黏著層之流動性及導電性黏著層之流動性。
本發明之黏著薄膜係使用於用以電性連接相對向之連接端子間之上述黏著薄膜，於40℃，頻率10Hz時之上述黏著薄膜硬化物之儲存彈性率E’係以0.5~2.5GPa為宜。
藉此連接連接端子後之黏著薄膜硬化物中之成份之凝聚力提升，而且內部應力減低。因此，可得到封裝品之顯示品質、黏著力及導通特性提升之有效效果。儲存彈性率未滿0.5GPa 時，與於上述範圍時比較，有黏著薄膜硬化物中之成份之凝聚力降低，連接電路構件時之連接部份之電阻上升之趨勢。另外，儲存彈性率若超過2.5GPa時，與於上述範圍時比較，有黏著薄膜硬化物之硬度上升，防止封裝品之面板反翹之效果降低之趨勢。
絕緣性黏著層及/或導電性黏著層係以含有薄膜形成材料、環氧樹脂及潛在性硬化劑為宜。藉此，由本發明可更確實達成上述效果。
本發明又提供層合含有導電粒子之導電性黏著層與絕緣性黏著層，絕緣性黏著層含有雙酚F型苯氧樹脂之黏著薄膜。藉由如此之黏著薄膜，可得到對COG封裝或COF封裝之低電阻電性連接，而且充分防止封裝液晶驅動用IC於液晶顯示用玻璃面板後之面板反翹，及鄰接電極間發生短路。
另外，本發明係提供配置具有第1連接端子之第1電路構件、與具有第2連接端子之第2電路構件，使第1連接端子與第2連接端子為相對向，在相對向配置之第1連接端子與第2連接端子之間，使黏著薄膜介在其中，進行加熱加壓，使第1連接端子與第2連接端子進行電性連接所成電路構件之連接構造，黏著薄膜具有含有導電粒子之導電性黏著層與絕緣性 黏著層，加熱加壓後之硬化之絕緣性黏著層之主面面積C除以硬化之導電性黏著層之主面面積D之值C/D為1.2~3.0之連接構造。藉由如此之電路構件之連接構造，因為使用本發明之黏著薄膜，所以連接信賴性非常高。
於上述連接構造中，第1及第2電路構件中至少一者為IC晶片即可。
於上述連接構造中，第1及第2連接端子中至少一者之表面係含有至少1種選自金、銀、錫、鉑族之金屬及銦錫氧化物(ITO)所成群即可。
於上述連接構造中，第1及第2電路構件中至少一者之表面係以至少1種選自氮化矽(silicon nitride)、聚矽氧烷化合物及聚醯亞胺樹脂所成群所塗佈(coating)或黏附(adhesion)處理即可。
本發明又提供配置具有第1連接端子之第1電路構件、與具有第2連接端子之第2電路構件，使該第1連接端子與該第2連接端子為相對向，在相對向配置之第1連接端子與第2連接端子之間，使黏著薄膜介在其中，進行加熱加壓，使第1連接端子與第2連接端子進行電性連接之電路構件之連接方法，黏著薄膜具有含導電粒子之導電性黏著層與絕緣性黏著層 ，加熱加壓後之硬化之上述絕緣性黏著層之主面面積C除以硬化之上述導電性黏著層之主面面積D之值C/D為1.2~3.0之連接方法。藉由如此之連接方法，因為使用本發明之黏著薄膜，所以可得到信賴性非常高之連接構造。
藉由本發明提供可得到對COG封裝或COF封裝之低電阻電性連接，而且充分防止封裝液晶驅動用IC於液晶顯示用玻璃面板後之面板反翹、及鄰接電極間發生短路之黏著薄膜，以及使用其之電路構件之連接方法及連接構造。
用以實施發明之最佳型態
以下係詳細地說明有關本發明之適合型態。但是，本發明並非侷限於下述之實施型態者。另外，圖式中，賦予相同符號於相同要素，省略重複的說明。另外，除非特別例外，上下左右等之位置關係為基於圖式所示之位置關係者。另外，圖式尺寸比率並非侷限於圖示比率者。
(黏著薄膜)
本發明係提供層合含有導電粒子之導電性黏著層與絕緣性黏著層，於層合方向以規定條件加熱加壓後之硬化之絕緣性黏著層之主面面 積C除以硬化之導電性黏著層之主面面積D之值C/D為1.2~3.0之黏著薄膜。
依據本發明相關之黏著薄膜，可得到對COG封裝或COF封裝之低電阻電性連接，而且充分防止封裝液晶驅動用IC於液晶顯示用玻璃面板後之面板反翹，及鄰接電極間發生短路。另外，連接電路時，可防止因導電性黏著層不流動，不能排除停滯於電極間之樹脂所發生的導通不良，或絕緣性黏著層過度流動，連接電路間之樹脂充填不足而黏著強度降低等之不良狀況。就相同的觀點，C/D值為1.5~2.5尤佳。
絕緣性黏著層與導電性黏著層係以上述規定條件加熱加壓前之主面面積實質上相同。以此主面面積為A。另外，以上述規定條件加熱加壓後之絕緣性黏著層與導電性黏著層之主面面積係如上所述，分別為C、D。作為絕緣性黏著層與導電性黏著層之上述加熱加壓所伴隨之流動性指標，定義為C/A、D/A。此等流動性之指標係隨著該數值愈高，顯示隨著上述加熱加壓而容易流動。本發明之相關上述值C/D係與絕緣性黏著層之流動性指標C/A除以絕緣性黏著層之流動性指標D/A之值相同。
作為導電粒子，可舉例如金(Au)、銀( Ag)、鎳(Ni)、銅(Cu)、銲料等之金屬粒子；碳粒子；被覆Au、Ag、Cu等之導電性物質於玻璃、陶瓷、塑膠等之非導電性物質之表面者；及被覆Au等之貴金屬類於Ni等之過渡金屬之表面者。就得到充分的可使用時間(Pot Life)之觀點，以導電粒子之表層係Au、Ag、鉑族之貴金屬類為宜，以Au尤佳。另外，作為導電粒子，使用被覆貴金屬類於非導電性物質者或熱溶融金屬粒子時，因為具有由加熱加壓之變形性，連接時與電極之接觸面積增加，信賴性升高，所以適宜。
被覆貴金屬類於非導電性物質之表面者的被覆層之厚度係為得到良好電阻，以100埃以上為宜。另外，為被覆貴金屬類於Ni等之過渡金屬之表面者時，由貴金屬類所形成之被覆層之缺損或混合分散導電粒子時所發生之被覆層之缺損等所造成氧化還原作用而發生游離自由基，有引起保存性降低之虞。因此，被覆層厚度係以300埃以上為宜。另外，因為被覆層厚度成1μm時，上述效果成飽和，所以以被覆層厚度未滿1μm為宜，但此並非限制被覆層厚度者。上述導電粒子係可單獨1種或組合2種以上使用。
如此導電粒子係相對於100體積份之黏著 薄膜中之樹脂成份，使含有0.1~30體積份為宜，以使含有0.1~10體積份尤佳。藉此可更高度防止因過剩的導電粒子而使鄰接電路短路。另外，上述所謂「樹脂成份」係指黏著薄膜中導電粒子以外的成份，具體上可指後述之薄膜形成材料、環氧樹脂、潛在性硬化劑等。
絕緣性黏著層與導電性黏著層係以含有薄膜形成材料、環氧樹脂及潛在性硬化劑為宜。藉此，由本發明可更確實地達成上述效果。
所謂薄膜形成材料，為使液狀物固體化，使構成組成物為薄膜形狀時，該薄膜之操作將變得容易，而且賦予不容易裂開、斷裂、發黏之機械特性等者，可以通常狀態作為薄膜操作者。作為該具體例，可舉例如苯氧樹脂、聚乙烯醇縮甲醛樹脂、聚苯乙烯樹脂、聚乙烯醇縮丁醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂及聚胺基甲酸酯樹脂。此等係可單獨1種或組合2種以上使用。其中，因黏著性、相溶性、耐熱性及機械強度優異，以苯氧樹脂尤佳。
苯氧樹脂係例如藉由使二官能性酚類與表鹵醇反應至高分子量，或使二官能性環氧樹脂與二官能性酚類聚加成所得之樹脂。具體上，苯氧樹脂係可藉由使1莫耳之二官能性酚類與0.985~1.015之表鹵醇於鹼金屬氫氧化物之存 在下，於非反應性溶劑中，以40~120℃之溫度反應而得。
作為如此之苯氧樹脂，就提升機械特性或熱特性之觀點上，以藉由使二官能性環氧樹脂與二官能性酚類之配合當量為環氧基/酚羥基為1/0.9~1/1.1，於鹼金屬化合物、有機磷系化合物、環狀胺系化合物等觸媒之存在下，於沸點為120℃以上之醯胺系、醚系、酮系、內酯系、醇系等之有機溶劑中，使反應固形物為50質量%以下之狀態，加熱成50~200℃，進行聚加成反應所得者為宜。
作為二官能性環氧樹脂，可舉例如雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、雙酚S型環氧樹脂。二官能性酚類係具有2個酚性羥基者，可舉例如雙酚A、雙酚F、雙酚AD、雙酚S等之雙酚類。苯氧樹脂亦可由自由基聚合性之官能基所變性。
上述之苯氧樹脂係可使用單獨1種，或混合2種以上使用。另外，絕緣性黏著層與導電性黏著層中亦可使含有種類相異的苯氧樹脂。例如使絕緣性黏著層含有雙酚F型苯氧樹脂，使導電性黏著層含有至少一種選自雙酚A型苯氧樹脂及雙酚A‧F共聚合型苯氧樹脂所成群之樹脂為宜。藉此使絕緣性黏著層之耐熱性及 流動性上升，導電性黏著層之彈性率及流動性降低。因此，導電性黏著層對於絕緣性黏著層之流動性受到抑制。
作為環氧樹脂，可使用表鹵醇與雙酚A、雙酚F或雙酚AD所衍生之雙酚型環氧樹脂；表鹵醇與苯酚酚醛或甲酚酚醛所衍生之環氧酚醛樹脂；含有萘環骨架之萘系環氧樹脂；環氧丙基胺、縮水甘油醚、聯苯及脂環式等之1分子內具有2個以上之環氧丙基之各種環氧化合物。此等環氧樹脂係可單獨或混合2種以上使用。此等環氧樹脂係以使用減低不純物離子(Na+ 、Cl- )等、或水解性氯等成300ppm以下之高純度品，因為防止電子遷移(electron migration)，所以適宜。
作為本發明使用之潛在性硬化劑，可舉例如咪唑系硬化劑、醯胼系硬化劑、三氟化硼-胺配位化合物、鋶鹽、胺醯亞胺(amineimide)、聚胺之鹽、雙氰胺。此等潛在性硬化劑係可單獨1種或混合2種以上使用，亦可混合分解促進劑、抑制劑等使用。另外，以聚胺基甲酸酯系、聚酯系之高分子物質等被覆此等硬化劑而微膠囊化者，因為可延長使用時間，所以適宜。
本發明之黏著薄膜係可於絕緣性黏著層及/ 或導電性黏著層中，含有以丙烯酸、丙烯酸酯、甲基丙烯酸酯或丙烯腈中之至少1種作為單體成份之聚合物或共聚物。併用含有縮水甘油醚基之縮水甘油丙烯酸酯或含縮水甘油甲基丙烯酸酯之共聚物系丙烯酸橡膠時，因為應力緩和優異，所以適宜。如此丙烯酸橡膠之分子量(藉由尺寸大小排除層析法之聚苯乙烯換算重量平均分子量)，就提高黏著薄膜之凝聚力之觀點，以20萬以上為宜。
黏著薄膜係可於絕緣性黏著層及/或導電性黏著層中，再含有填充劑、軟化劑、促進劑、抗氧化劑、阻燃劑、色素、搖變劑(Thixotropic Agent)、交聯劑、三聚氰胺樹脂及異氰酸酯類。
含有填充劑時，因為可得到連接信賴性等之提升，所以適宜。填充劑係該最大徑若為未滿導電粒子之粒徑即可使用。填充劑之含有比率係相對於100體積份之黏著薄膜中之樹脂成份，以5~60體積份之範圍為宜。此含有比率若超過60體積份時，信賴性提升效果變得容易飽和，添加未滿5體積份之填充劑時之效果小。
作為交聯劑，就提升黏著性之觀點上，以酮亞胺、乙烯基、丙烯基、胺基、環氧基及異 氰酸基含有物為宜。作為該具體例，作為具有胺基之矽烷交聯劑，可舉例如N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷。另外，作為具有酮亞胺之矽烷交聯劑，可舉例如使丙酮、甲基乙基酮、甲基異丁基酮等之酮化合物反應於上述具有胺基之交聯劑所得者。
上述黏著薄膜之硬化物於40℃，頻率10Hz時之儲存彈性率E’係以0.5~2.5GPa為宜，以1.0~2.0GPa尤佳。
依此與儲存彈性率為上述範圍外時比較，連接連接端子後之黏著薄膜硬化物中之成份之凝聚力提升，而且內部應力減低。因此，得到使用此黏著薄膜之封裝品之顯示品質、黏著力及導通特性提升等之有效效果。儲存彈性率未滿0.5GPa時，與於上述範圍時比較，黏著薄膜硬化物中之成份之凝聚力降低，連接電路構件時之連接部份之電阻有上升之趨勢。另外，儲存彈性率超過2.5GPa時，與於上述範圍時比較，黏著薄膜硬化物之硬度上升，防止封裝品面板反翹之效果有降低之趨勢。
本發明之黏著薄膜係可由絕緣性黏著層及 導電性黏著層所成之2層所構成者，亦可由3層以上的層所構成者。由3層以上的層所構成時，以絕緣性黏著層及導電性黏著層交互層合者為宜。例如作為由3層所構成之黏著薄膜，以導電性黏著層、絕緣性黏著層及導電性黏著層之該順序所層合者，或絕緣性黏著層、導電性黏著層及絕緣性黏著層之該順序所層合者。此等情況時，導電性黏著層彼此間或絕緣性黏著層彼此間之材料、組成及/或膜厚係可相異或相同。
由3層以上的層所構成之黏著薄膜中，於層合方向以規定條件加熱加壓後，關於互相連接之絕緣性黏著層中至少1組之C/D值為1.2~3.0。另外，由3層以上的層所構成之黏著薄膜中，於層合方向以規定條件加熱加壓後，關於各互相連接之絕緣性黏著層之C/D值皆為1.2~3.0為宜。
滿足上述C/D之數值範圍之本發明之黏著薄膜係例如可藉由下述(1)、(2)中任1層之絕緣性黏著層、與下述(3)~(5)中任1層之導電性黏著層組合而得。
(1)含有雙酚F型苯氧樹脂之絕緣性黏著層。
(2)含有重量平均分子量為1000~10000 之雙酚A型固體環氧樹脂、重量平均分子量為1000~10000之雙酚A‧F型固體環氧樹脂、及重量平均分子量為1000~10000之F型固體環氧樹脂中任一種之絕緣性黏著層。
(3)含有雙酚A型苯氧樹脂、或雙酚A‧F共聚合型苯氧樹脂之導電性黏著層。
(4)含有分子內含茀(fluorene)環之苯氧樹脂之導電性黏著層。
(5)相對於100體積份之樹脂成份，含有5~30體積份之粒徑為0.1~1.0μm之非導電性微粒子之導電性黏著層。
上述之黏著薄膜係可使用於例如COG封裝或COF封裝中用以電性連接IC晶片及撓性帶或玻璃基板。
(電路構件之連接構造)
本發明係提供配置具有第1連接端子之第1電路構件、與具有第2連接端子之第2電路構件，使第1連接端子與第2連接端子為相對向，在相對向配置之第1連接端子與第2連接端子之間，使上述黏著薄膜介在其中，進行加熱加壓，使第1連接端子與第2連接端子進行電性連接所成之電路構件之連接構造。
圖1係表示有關本發明之電路構件之連接 構造之一種適合實施型態之概略斷面圖。圖1所示之連接構造100係具備相對向之第1電路構件10及第2電路構件20，第1電路構件10及第2電路構件20之間，設有連接此等之電路連接構件30。
作為第1及第2電路構件10、20之具體例，可舉例如半導體晶片、電阻晶片或電容器晶片等之晶片零件或印刷基板等之基板。作為連接構造100之連接型態，亦有IC晶片與晶片搭載基板之連接、電性電路互相連接、COG封裝或COF封裝中之IC晶片與玻璃基板或撓性帶之連接等。
尤其，電路構件10、20中至少一者為IC晶片。
另外，電路構件10、20中至少一者之表面係以至少1種選自氮化矽、聚矽氧烷化合物及聚醯亞胺樹脂所成群所塗佈或黏附處理為宜。依據上述黏著薄膜，對如此電路構件之黏著強度尤其良好。
第1電路構件10係具有第1電路基板11與於第1電路基板11之主面11a上所形成之第1電極(連接端子)12。第2電路構件20係具有第2電路基板21與於第2電路基板21之主面21a上所形成之第2電極(連接端子)22。 於連接構造100中，第1電極12與第2電極22成相對向配置，而且電性連接。另外，第1電路基板11之主面11a上及第2電路基板21之主面21a上，有時亦可形成絕緣層(無圖示)。
第1及第2電極11、12中至少一者之表面係含有至少1種選自金、銀、錫、鉑族之金屬及銦錫氧化物(ITO)所成群為宜。
電路連接構件30係上述黏著薄膜之硬化物。由黏著薄膜之硬化物中之導電粒子(無圖示)，電性連接第1電極12及第2電極22。
本實施型態之連接構造100之製造方法，亦即電路構件10、20之連接方法係如下所述。首先，第1及第2電路構件10、20之間，使上述黏著薄膜介在其中。此時，配置第1及第2電路構件10、20，使第1電極12及第2電極22相對向。另外，黏著薄膜係可介在其中，以絕緣性黏著層側連接第1電極12，亦可介在其中以連接第2電極22。接著，介在第1及第2電路構件10、20之間，加熱黏著薄膜，往此等之層合方向加壓，施以黏著薄膜之硬化處理，形成連接構造100。硬化處理係可由一般方法進行，該方法係可依黏著薄膜而適當選擇。
以上係說明關於本發明適合之實施型態， 但本發明並非侷限於上述實施型態者。本發明係於不超出該要旨之範圍，可進行各種改變。
實施例
以下係由實施例詳細地說明本發明，但本發明並非侷限於此者。另外，於下述實施例中，雙酚F型苯氧樹脂係東都化成股份有限公司製，商品名「FX-316」、雙酚A型苯氧樹脂係INCHEM coporation公司製，商品名「PKHC」、雙酚A‧F共聚合型苯氧樹脂係東都化成股份有限公司製，商品名「ZX-1356-2」、芳香族鋶鹽係三新化學工業股份有限公司製，商品名「San-Aid SI-60」。另外，作為液狀環氧，使用含有微膠囊型潛在性硬化劑之液狀環氧(旭化成化學公司製，商品名「Novacure HX-3941)，環氧當量185)。
(實施例1)
使100g之雙酚F型苯氧樹脂溶解於質量比為50：50之甲苯(沸點為110.6℃，SP值為8.90)與醋酸乙酯(沸點為77.1℃，SP值為9.10)之混合溶劑，得到固形物為60質量%之溶液。配合液狀環氧於該溶液，再添加作為潛在性硬化劑之2.4g之芳香族鋶鹽，得到混合液。另外，上述液狀環氧係以雙酚F型苯氧樹脂：液狀環氧之固體質量比成60：40的量配合。 使用塗佈裝置塗佈所得之混合液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘，形成厚度為10μm之絕緣性黏著層。
另外，使50g之雙酚A型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為40質量%之第1溶液。另一方面，使50g之雙酚A‧F共聚合型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為45質量%之第2溶液。
混合上述之第1及第2溶液，再配合液狀環氧於該混合液。此等係以雙酚A型苯氧樹脂：雙酚A‧F共聚合型苯氧樹脂：液狀環氧之固體質量比成30：30：40的量配合。於所得之配合液，再配合、分散相對於樹脂成份為10體積%之導電粒子，再添加作為潛在性硬化劑之2.4g之芳香族鋶鹽，得到分散液。使用塗佈裝置塗佈所得之分散液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘，形成厚度為10μm之導電性黏著層。使用層合機互貼形成之絕緣性黏著層及導電性黏著層，得到以PET薄膜所包夾之黏著薄膜。
(實施例2)
除了絕緣性黏著層形成係如下述取代以外，與實施例1同樣地操作，得到附有PET薄膜之黏著薄膜。使100g之雙酚F型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為60質量%之第1溶液。另一方面，使50g之雙酚A‧F共聚合型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為45質量%之第2溶液。混合上述之第1及第2溶液，再配合液狀環氧於該混合液。此等係以雙酚F型苯氧樹脂：雙酚A‧F共聚合型苯氧樹脂：液狀環氧之固體質量比成30：30：40的量配合。於所得之配合液，再添加作為潛在性硬化劑之2.4g之芳香族鋶鹽，得到混合液。使用塗佈裝置塗佈所得之混合液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘，形成厚度為10μm之絕緣性黏著層。
(比較例1)
使50g之雙酚A型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為40質量%之第1溶液。另一方面，使50g之雙酚A‧F共聚合型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為45質量%之第2溶液。混合上述之 第1及第2溶液，再配合液狀環氧於該混合液。此等係以雙酚A型苯氧樹脂：雙酚A‧F共聚合型苯氧樹脂：液狀環氧之固體質量比成30：30：40的量配合。於所得之配合液，再添加作為潛在性硬化劑之2.4g之芳香族鋶鹽，得到混合液。使用塗佈裝置塗佈所得之混合液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘，形成厚度為10μm之絕緣性黏著層。
使100g之雙酚F型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為60質量%之第1溶液。另一方面，使50g之雙酚A‧F共聚合型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為45質量%之第2溶液。混合上述之第1及第2溶液，再配合液狀環氧於該混合液。此等係以雙酚F型苯氧樹脂：雙酚A‧F共聚合型苯氧樹脂：液狀環氧之固體質量比成30：30：40的量配合。於所得之配合液，再配合、分散相對於樹脂成份為10體積%之導電粒子，再添加作為潛在性硬化劑之2.4g之芳香族鋶鹽，得到分散液。使用塗佈裝置塗佈所得之分散液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘， 形成厚度為10μm之導電性黏著層。使用層合機互黏形成之絕緣性黏著層及導電性黏著層，得到以PET薄膜所包夾之黏著薄膜。
(比較例2)
除了如下述形成絕緣性黏著層以外，與實施例1同樣地操作，得到附有PET薄膜之黏著薄膜。使100g之雙酚F型苯氧樹脂溶解於質量比為50：50之甲苯與醋酸乙酯之混合溶劑，得到固形物為60質量%之溶液。配合液狀環氧於該溶液中，得到混合液。另外，上述液狀環氧係以雙酚F型苯氧樹脂：液狀環氧之固體質量比成60：40的量配合。未添加作為潛在性硬化劑之芳香族鋶鹽，使用塗佈裝置塗佈所得之混合液於厚度為50μm之單面為聚矽氧烷所表面處理之PET薄膜後，由70℃熱風乾燥5分鐘，形成厚度為10μm之絕緣性黏著層。
(形成電路構件之連接構造)
分別使用實施例1、2及比較例1、2之黏著薄膜，製作電路構件之連接構造。詳細而言，首先，剝離除去黏著薄膜之導電性黏著層側之PET薄膜，露出導電性黏著層之表面。接著，於厚度為0.5mm之玻璃上，藉由蒸著而形成ITO膜，得到ITO基板(表面電阻<20Ω/□)。接著，使上述黏著薄膜之導電性黏著層表面相 對向於ITO膜表面，使接觸下，以70℃、0.5MPa、3秒鐘之條件，於此等之層合方向加熱加壓，假固定黏著薄膜於ITO基板。之後，自黏著薄膜剝離除去另一方之PET薄膜。接著，載置設有2列(成千鳥格排列)之凸塊面積為30μm×50μm，腳距為40μm，高度為15μm之金凸塊之IC晶片於上述黏著薄膜上。以石英玻璃及加壓頭夾住載置IC晶片之黏著薄膜，藉由160℃、100MPa、10秒鐘之條件加熱加壓，連接ITO基板及IC晶片，製造電路構件之連接構造。
(凸塊-玻璃基板配線間捕捉粒子數之測定)
關於上述之連接構造，由ITO基板之玻璃側，以金屬顯微鏡(倍率為500倍)觀察200處之30μm×50μm之範圍，計數ITO基板與金凸塊所包夾之導電粒子數。接著，藉由相加平均而求出每一個範圍之導電粒子。該結果如表1所示。
(測定連接電阻)
關於使用實施例1、2及比較例1、2之黏著薄膜所得之電路構件之連接構造，使用4端子測定法，以萬用表測定初期、及於高溫高濕槽(85℃，85%RH環境下)中保持500小時後 之該連接部份之電阻值。該結果如表1所示。
(測定C/D值)
將實施例1、2及比較例1、2之黏著薄膜，切成φ5.5mm之圓板狀。接著，將切出的黏著薄膜，夾於厚度為o.7mm、15mm×15mm之2片玻璃板之間，以160℃、2MPa、10秒鐘之條件進行加熱加壓。由加熱加壓前之黏著薄膜之主面面積A，與加熱加壓後之硬化絕緣性黏著層之主面面積C，求出C/A值。進而，由加熱加壓前之黏著薄膜之主面面積A，與加熱加壓後之硬化導電性黏著層之主面面積D，求出D/A值，藉由C/A值除以D/A值，算出C/D值。該結果如表1所示。
另外，上述主面面積C及D係使用掃描器等拍攝，使用影像處理裝置，求出玻璃板加熱加壓後之硬化黏著薄膜之擴展。面積C係由黏著薄膜之最外圍所包圍之部份面積，面積D係由最外圍之內側圍所包圍之部份面積。此等係最外圍與最外圍內側圍之間的部份係肉眼看到為白色透明，以掃描器拍攝時看到為淡青色，另外，最外圍內側圍之內側部份係肉眼看到為泛黑色，以掃描器拍攝時看到為白色，所以可以區別。以掃描器拍攝加熱加壓後之硬化黏著薄膜的影像係如圖2所示。另外，圖2所示之 硬化黏著薄膜之最外圍之直徑約為9mm。
10‧‧‧第1電路構件
11‧‧‧第1電路基板
12‧‧‧第1電極
20‧‧‧第2電路構件
21‧‧‧第2電路基板
22‧‧‧第2電極
30‧‧‧電路連接構件
100‧‧‧連接構造
[圖1]表示有關本發明之電路構件之連接構造之一種實施型態之概略斷面圖。
[圖2]表示以掃描器拍攝加熱加壓後之硬化黏著薄膜之影像圖。

Claims (11)

  1. 一種黏著薄膜，其特徵為，層合有含導電粒子之導電性黏著層與絕緣性黏著層，該絕緣性黏著層係下述(1)、(2)之中任一之1層，該導電性黏著層係下述(3)~(5)之中任一之1層；(1)含有雙酚F型苯氧樹脂之絕緣性黏著層，(2)含有重量平均分子量1000~10000之雙酚A型固形環氧樹脂、重量平均分子量1000~10000之雙酚A‧F型固形環氧樹脂、及重量平均分子量1000~10000之雙酚F型固形環氧樹脂之中任一之絕緣性黏著層，(3)含有雙酚A型苯氧樹脂，或雙酚A‧F共聚合型苯氧樹脂之導電性黏著層，(4)含有於分子內具有茀環之苯氧樹脂之導電性黏著層，(5)相對於樹脂成分100體積份而含有5~30體積份之粒徑0.1~1.0μm之非導電性微粒子之導電性黏著層。
  2. 如申請專利範圍第1項之黏著薄膜，其係使用於用以電性連接相對向之連接端子間者。
  3. 如申請專利範圍第1項之黏著薄膜，其係使用於COG封裝或COF封裝。
  4. 如申請專利範圍第1項至第3項中任一項之黏著薄膜，其中在40℃、頻率10Hz下該黏著薄膜之硬化物之儲存彈性率E'為0.5~2.5GPa。
  5. 如申請專利範圍第1項至第3項中任一項之黏著薄膜，其中該絕緣性黏著層及/或該導電性黏著層含有薄膜形成材料、環氧樹脂及潛在性(latent)硬化劑。
  6. 如申請專利範圍第1項至第3項中任一項之黏著薄膜，其中該絕緣性黏著層及/或該導電性黏著層含有環氧樹脂及潛在性(latent)硬化劑。
  7. 一種電路構件之連接構造，其特徵為，將具有第1連接端子之第1電路構件(circuit component)，與具有第2連接端子之第2電路構件，配置(arranged)為使該第1連接端子與該第2連接端子為相對向(opposed)，在相對向配置之該第1連接端子與該第2連接端子間有如申請專利範圍第1項至第6項中任一項之黏著薄膜介在其中(interposed between)，予以加熱加壓，使該第1連接端子 與該第2連接端子進行電性連接所成者。
  8. 如申請專利範圍第7項之電路構件之連接構造，其中該第1及第2電路構件中至少一者為IC晶片。
  9. 如申請專利範圍第7項或第8項之電路構件之連接構造，其中該第1及第2連接端子中至少一者之表面係含有選自金、銀、錫、鉑族之金屬及銦-錫氧化物所成群之至少1種者。
  10. 如申請專利範圍第7項或第8項之電路構件之連接構造，其中該第1及第2電路構件中至少一者之表面係以選自氮化矽、聚矽氧化合物及聚醯亞胺樹脂所成群之至少1種進行塗佈(coating)或黏附(adhesion)處理者。
  11. 一種電路構件之連接方法，其特徵為將具有第1連接端子之第1電路構件，與具有第2連接端子之第2電路構件，配置為使該第1連接端子與該第2連接端子為相對向，在相對向配置之該第1連接端子與該第2連接端子之間使如申請專利範圍第1項至第6項中任一項之黏著薄膜介在其中，進行加熱加壓，使相對向配置之該第1連接端子與該第2連接端子電性連接者。
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