TWI389187B - 具有接地構件完整性指示器之電漿處理室及其使用方法 - Google Patents

具有接地構件完整性指示器之電漿處理室及其使用方法 Download PDF

Info

Publication number
TWI389187B
TWI389187B TW096140121A TW96140121A TWI389187B TW I389187 B TWI389187 B TW I389187B TW 096140121 A TW096140121 A TW 096140121A TW 96140121 A TW96140121 A TW 96140121A TW I389187 B TWI389187 B TW I389187B
Authority
TW
Taiwan
Prior art keywords
ground
chamber
processing
substrate support
grounding
Prior art date
Application number
TW096140121A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832530A (en
Inventor
John M White
Carl Sorensen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200832530A publication Critical patent/TW200832530A/zh
Application granted granted Critical
Publication of TWI389187B publication Critical patent/TWI389187B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW096140121A 2006-11-20 2007-10-25 具有接地構件完整性指示器之電漿處理室及其使用方法 TWI389187B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/561,463 US8004293B2 (en) 2006-11-20 2006-11-20 Plasma processing chamber with ground member integrity indicator and method for using the same

Publications (2)

Publication Number Publication Date
TW200832530A TW200832530A (en) 2008-08-01
TWI389187B true TWI389187B (zh) 2013-03-11

Family

ID=39416283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096140121A TWI389187B (zh) 2006-11-20 2007-10-25 具有接地構件完整性指示器之電漿處理室及其使用方法

Country Status (5)

Country Link
US (1) US8004293B2 (enExample)
JP (1) JP5291848B2 (enExample)
KR (1) KR100923594B1 (enExample)
CN (1) CN101187013B (enExample)
TW (1) TWI389187B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697657B (zh) * 2015-06-11 2020-07-01 日商東京威力科創股份有限公司 用以檢查聚焦環之系統、以及檢查聚焦環之方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5655602A (en) 1992-08-28 1997-08-12 Marathon Oil Company Apparatus and process for drilling and completing multiple wells
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
TWI458850B (zh) * 2008-07-07 2014-11-01 Lam Res Corp 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8466697B2 (en) * 2009-04-28 2013-06-18 Lam Research Corporation Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof
KR101711912B1 (ko) * 2009-09-16 2017-03-06 삼성전자주식회사 이동단말기의 효율적인 무선 충전을 위한 장치 및 방법
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
JP5852378B2 (ja) * 2011-09-13 2016-02-03 キヤノン株式会社 堆積膜形成方法および電子写真感光体の製造方法
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9245720B2 (en) * 2012-06-12 2016-01-26 Lam Research Corporation Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system
KR20150022163A (ko) * 2013-08-22 2015-03-04 삼성디스플레이 주식회사 플라즈마 처리 장치용 스트랩 및 이를 포함하는 플라즈마 처리 장치
US9595464B2 (en) * 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
US9903739B2 (en) * 2015-06-11 2018-02-27 Tokyo Electron Limited Sensor chip for electrostatic capacitance measurement and measuring device having the same
KR102099660B1 (ko) * 2015-10-02 2020-04-14 주식회사 원익아이피에스 기판처리장치
US10074549B2 (en) * 2016-03-28 2018-09-11 Tokyo Electron Limited Method for acquiring data indicating electrostatic capacitance
US10921251B2 (en) 2016-08-22 2021-02-16 Applied Materials, Inc. Chamber component part wear indicator and a system for detecting part wear
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
CN119663247A (zh) * 2017-06-01 2025-03-21 应用材料公司 延长在pecvd工艺腔室中接地带使用寿命
JP7186393B2 (ja) * 2018-12-06 2022-12-09 東京エレクトロン株式会社 プラズマ処理装置
JP7446335B2 (ja) * 2019-04-29 2024-03-08 アプライド マテリアルズ インコーポレイテッド 接地用ストラップアセンブリ
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US20240093380A1 (en) * 2022-09-21 2024-03-21 Applied Materials, Inc. Grounding devices for substrate processing chambers
KR102788403B1 (ko) 2022-11-23 2025-03-28 심경식 기판처리설비의 단선 방지 장치

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771230A (en) * 1986-10-02 1988-09-13 Testamatic Corporation Electro-luminescent method and testing system for unpopulated printed circuit boards, ceramic substrates, and the like having both electrical and electro-optical read-out
KR940010649A (ko) * 1992-10-14 1994-05-26 오오가 노리오 인쇄장치와 감광지
KR100276093B1 (ko) 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
JPH0721964A (ja) * 1993-07-02 1995-01-24 Casio Comput Co Ltd 電子線分析装置
KR100264445B1 (ko) 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6042686A (en) 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5900062A (en) * 1995-12-28 1999-05-04 Applied Materials, Inc. Lift pin for dechucking substrates
US6012600A (en) 1996-02-02 2000-01-11 Applied Materials, Inc. Pressure responsive clamp for a processing chamber
US6345589B1 (en) * 1996-03-29 2002-02-12 Applied Materials, Inc. Method and apparatus for forming a borophosphosilicate film
US6254746B1 (en) * 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US6057235A (en) * 1997-09-15 2000-05-02 Micron Technology, Inc. Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6827373B2 (en) * 1997-12-08 2004-12-07 Capture Business Cards Llc Business card stock with peel off labels, and method
GB9800405D0 (en) * 1998-01-10 1998-03-04 Reed Edward John Welding method and apparatus
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
EP1073779A4 (en) * 1998-04-13 2007-05-30 Tokyo Electron Ltd IMPEDANCE CHAMBER REDUCED
JP3241332B2 (ja) * 1998-10-27 2001-12-25 日本電気株式会社 無線携帯端末のノイズ低減方法
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6349670B1 (en) 1998-11-30 2002-02-26 Alps Electric Co., Ltd. Plasma treatment equipment
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
US6531030B1 (en) * 2000-03-31 2003-03-11 Lam Research Corp. Inductively coupled plasma etching apparatus
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US6364958B1 (en) 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
JP2001338914A (ja) * 2000-05-30 2001-12-07 Tokyo Electron Ltd ガス導入機構およびガス導入方法、ガスリーク検出方法、ならびに真空処理装置
US6384958B1 (en) * 2000-06-26 2002-05-07 Jds Uniphase Corporation Free-space thermo-optical devices
EP1174910A3 (en) 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP4666740B2 (ja) * 2000-10-06 2011-04-06 川崎マイクロエレクトロニクス株式会社 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法
US6558717B1 (en) * 2000-12-04 2003-05-06 Campina B.V. Method for the sequential precipitation of casein and calcium phosphate from a milk source
US7202690B2 (en) * 2001-02-19 2007-04-10 Nidec-Read Corporation Substrate inspection device and substrate inspecting method
KR100877243B1 (ko) * 2001-02-19 2009-01-07 니혼 덴산 리드 가부시끼가이샤 회로 기판 검사 장치 및 회로 기판을 검사하기 위한 방법
WO2002084698A1 (en) * 2001-04-13 2002-10-24 Applied Materials, Inc. Inductively coupled plasma source with controllable power distribution
US6915885B2 (en) * 2001-08-09 2005-07-12 Zf Sachs Ag Oscillation damper with adjustable damping force
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US20050263070A1 (en) * 2004-05-25 2005-12-01 Tokyo Electron Limited Pressure control and plasma confinement in a plasma processing chamber
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
JP4705378B2 (ja) * 2005-01-31 2011-06-22 東京エレクトロン株式会社 処理装置及び処理方法
JP2007048986A (ja) * 2005-08-10 2007-02-22 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697657B (zh) * 2015-06-11 2020-07-01 日商東京威力科創股份有限公司 用以檢查聚焦環之系統、以及檢查聚焦環之方法

Also Published As

Publication number Publication date
KR20080045610A (ko) 2008-05-23
CN101187013A (zh) 2008-05-28
US8004293B2 (en) 2011-08-23
JP5291848B2 (ja) 2013-09-18
US20080116876A1 (en) 2008-05-22
JP2008156747A (ja) 2008-07-10
TW200832530A (en) 2008-08-01
KR100923594B1 (ko) 2009-10-23
CN101187013B (zh) 2010-12-15

Similar Documents

Publication Publication Date Title
TWI389187B (zh) 具有接地構件完整性指示器之電漿處理室及其使用方法
US20100013626A1 (en) Substrate lift pin sensor
JP5563347B2 (ja) プラズマ処理装置及び半導体装置の製造方法
US10978323B2 (en) Substrate holder having integrated temperature measurement electrical devices
JP5387921B2 (ja) 静電チャック装置及び基板の吸着状態判別方法
KR100929448B1 (ko) 기판 유지 기구 및 플라즈마 처리 장치
US20100163188A1 (en) Mounting table structure and processing apparatus
KR20110125188A (ko) 플라즈마 처리 장치 및 반도체 장치의 제조 방법
CN101378031B (zh) 基板载置台以及基板处理装置
TWI816890B (zh) 電漿處理裝置及環構件之厚度測定方法
CN101359580B (zh) 具有感测单元的衬底处理设备
KR102263417B1 (ko) 기판 처리 장치 및 기판 처리 방법
JP2002305237A (ja) 半導体製造方法および製造装置
US20090056627A1 (en) Method and apparatus for monitoring plasma-induced damage using dc floating potential of substrate
JP4576200B2 (ja) 基板処理装置及び基板処理装置におけるアーキング発生監視方法
KR102636473B1 (ko) 반도체 가공 장치 및 마그네트론 스퍼터링 장치
JP2010144256A (ja) 基板処理装置
JPH04162443A (ja) 静電チャック装置
JP7281885B2 (ja) 静電チャック装置およびその制御方法
HK1156149B (en) Electrostatic chuck device and method for determining adsorbed state of wafer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees