JP2008156747A - 接地部材完全性インジケータを備えたプラズマ処理チャンバとその使用方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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Abstract
【解決手段】一実施形態において、基板支持体とチャンバ本体部との間に連結された接地経路部材を含む処理チャンバを提供する。センサを適当な位置に配置して接地部材を流れる電流を表す計量値を検出する。別の実施形態において、プラズマ処理チャンバ内で基板支持体をチャンバ本体部に連結している接地部材の完全性のモニタ方法は、処理中に接地部材を流れる電流を示す計量値をモニタし、所定の閾値を越えた計量値に応答してフラグを設定することを含む。
【選択図】図1
Description
本発明の実施形態は、概して、基板をプラズマ処理するための方法及び装置、より具体的には接地部材完全性インジケータを有するプラズマ処理チャンバ及びその使用方法に関する。
液晶ディスプレイ又はフラットパネルは一般的にコンピュータやテレビモニタ等のアクティブマトリックスディスプレイに使用されている。通常、フラットパネルは2枚のプレートとその間に挟持された液晶材料層を備える。このプレートの少なくとも1枚は、その上に配置され、かつ電源に連結された少なくとも1枚の導電性フィルムを含む。電源から導電性フィルムに供給された電力により液晶材料の配向が変化し、ディスプレイにパターンが形成される。
Claims (22)
- チャンバ本体部と、
チャンバ本体部内に配置された基板支持体と、
基板支持体とチャンバ本体部との間に連結された接地経路部材と、
接地経路部材を流れる電流を示す計量値を検出するために位置されたセンサを備える処理チャンバ。 - 接地経路部材が可撓性ストラップを更に含む請求項1記載の処理チャンバ。
- 接地経路部材が、基板支持体から離間した第1位置と基板支持体と接触した第2位置との間で移動可能なバーを更に含む請求項1記載の処理チャンバ。
- センサが電流センサを更に含む請求項1記載の処理チャンバ。
- センサがチャンバ本体部内に配置される請求項1記載の処理チャンバ。
- センサがチャンバ本体部の外部に配置される請求項1記載の処理チャンバ。
- センサが、接地部材の抵抗を示す計量値を検出するように構成された抵抗センサを更に含む請求項1記載の処理チャンバ。
- チャンバ本体部と、
チャンバ本体部内に配置された基板支持体と、
基板支持体とチャンバ本体部との間に連結された複数の接地ストラップと、
それぞれが各接地ストラップについてその完全性を示す計量値を検出するために位置されている複数のセンサを備える処理チャンバ。 - 複数のセンサが処理チャンバ内に配置されている請求項8記載の処理チャンバ。
- チャンバ本体部を洞貫する真空フィードスルーと、
センサに連結され、フィードスルー内を通る複数のリード線を更に備える請求項9記載の処理チャンバ。 - 少なくとも1つのセンサに連結された検出回路を更に備え、検出回路が増幅器を含む請求項8記載の処理チャンバ。
- 少なくとも1つのセンサが、関連するストラップの抵抗を示す計量値を検出するように構成された抵抗センサを更に含む請求項8記載の処理チャンバ。
- 少なくとも1つのセンサが、関連するストラップを流れる電流を示す計量値を検出するように構成された電流センサを更に含む請求項8記載の処理チャンバ。
- 処理中に接地部材を流れる電流を示す計量値をモニタし、
計量値における変化が所定の閾値を越える場合にフラグを設定することを含むプラズマ処理チャンバ内において基板支持体をチャンバ本体部に連結している接地部材の完全性をモニタするための方法。 - フラグの設定が、所定の数の接地経路が開路状態にあるか否かを求めることを更に含む請求項14記載の方法。
- フラグの設定が、所定の組み合わせの接地経路が開路状態にあるか否かを求めることを更に含む請求項14記載の方法。
- フラグの設定が、オペレータへの警告を更に含む請求項14記載の方法。
- フラグの設定が、フラグに応答してプラズマ処理チャンバを非稼動とすることを更に含む請求項14記載の方法。
- 真空処理チャンバ内で基板支持体上に配置された基板をプラズマ処理し、
処理中に基板支持体をグラウンドに連結している接地部材の連続性をモニタすることを含む基板の処理方法。 - 接地部材の連続性をモニタすることが、接地部材を流れる電流を検出すること又は接地部材の抵抗をモニタすることの少なくとも1つを更に含む請求項19記載の方法。
- 接地部材の連続性に変化が検出された際にフラグを設定することを更に含む請求項19記載の方法。
- 接地部材の連続性における変化に応答して処理設定を変更することを更に含む請求項19記載の方法。
Applications Claiming Priority (2)
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US11/561,463 US8004293B2 (en) | 2006-11-20 | 2006-11-20 | Plasma processing chamber with ground member integrity indicator and method for using the same |
US11/561463 | 2006-11-20 |
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JP2008156747A true JP2008156747A (ja) | 2008-07-10 |
JP2008156747A5 JP2008156747A5 (ja) | 2010-12-09 |
JP5291848B2 JP5291848B2 (ja) | 2013-09-18 |
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JP2007276381A Expired - Fee Related JP5291848B2 (ja) | 2006-11-20 | 2007-10-24 | 接地部材完全性インジケータを備えたプラズマ処理チャンバとその使用方法 |
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US (1) | US8004293B2 (ja) |
JP (1) | JP5291848B2 (ja) |
KR (1) | KR100923594B1 (ja) |
CN (1) | CN101187013B (ja) |
TW (1) | TWI389187B (ja) |
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- 2007-10-25 TW TW096140121A patent/TWI389187B/zh not_active IP Right Cessation
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JP2006060212A (ja) * | 2004-08-16 | 2006-03-02 | Applied Materials Inc | 基板を開放する方法及び装置 |
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JP2012525683A (ja) * | 2009-04-28 | 2012-10-22 | ラム リサーチ コーポレーション | 電流フローの可撓接続の断絶を検出するための装置およびその方法 |
JP2013060626A (ja) * | 2011-09-13 | 2013-04-04 | Canon Inc | 堆積膜形成方法 |
WO2020116256A1 (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2020092028A (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US20210343501A1 (en) * | 2018-12-06 | 2021-11-04 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
JP7186393B2 (ja) | 2018-12-06 | 2022-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11990316B2 (en) | 2018-12-06 | 2024-05-21 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
Also Published As
Publication number | Publication date |
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US20080116876A1 (en) | 2008-05-22 |
US8004293B2 (en) | 2011-08-23 |
KR100923594B1 (ko) | 2009-10-23 |
KR20080045610A (ko) | 2008-05-23 |
CN101187013A (zh) | 2008-05-28 |
TWI389187B (zh) | 2013-03-11 |
JP5291848B2 (ja) | 2013-09-18 |
TW200832530A (en) | 2008-08-01 |
CN101187013B (zh) | 2010-12-15 |
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