TWI388001B - 具有圓形地對稱於濺射靶材之rf及dc饋給的物理氣相沉積反應器 - Google Patents
具有圓形地對稱於濺射靶材之rf及dc饋給的物理氣相沉積反應器 Download PDFInfo
- Publication number
- TWI388001B TWI388001B TW098134829A TW98134829A TWI388001B TW I388001 B TWI388001 B TW I388001B TW 098134829 A TW098134829 A TW 098134829A TW 98134829 A TW98134829 A TW 98134829A TW I388001 B TWI388001 B TW I388001B
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- Prior art keywords
- radial
- conductive
- connecting rod
- hollow cylindrical
- cylindrical portion
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims description 17
- 238000005240 physical vapour deposition Methods 0.000 title description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000013077 target material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 31
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 238000009826 distribution Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/253,603 US8070925B2 (en) | 2008-10-17 | 2008-10-17 | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201030811A TW201030811A (en) | 2010-08-16 |
| TWI388001B true TWI388001B (zh) | 2013-03-01 |
Family
ID=42107132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098134829A TWI388001B (zh) | 2008-10-17 | 2009-10-14 | 具有圓形地對稱於濺射靶材之rf及dc饋給的物理氣相沉積反應器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8070925B2 (https=) |
| JP (1) | JP5345221B2 (https=) |
| KR (1) | KR101284787B1 (https=) |
| CN (1) | CN102203908B (https=) |
| TW (1) | TWI388001B (https=) |
| WO (1) | WO2010045037A2 (https=) |
Families Citing this family (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102439697B (zh) * | 2009-04-03 | 2015-08-19 | 应用材料公司 | 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法 |
| US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US8795487B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
| US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
| TWI554630B (zh) * | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| US8563428B2 (en) * | 2010-09-17 | 2013-10-22 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| US20120097104A1 (en) * | 2010-10-20 | 2012-04-26 | COMET Technologies USA, Inc. | Rf impedance matching network with secondary dc input |
| US8491759B2 (en) * | 2010-10-20 | 2013-07-23 | COMET Technologies USA, Inc. | RF impedance matching network with secondary frequency and sub-harmonic variant |
| US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| JP6276697B2 (ja) * | 2011-11-23 | 2018-02-07 | ラム リサーチ コーポレーションLam Research Corporation | 対称的なrf供給のための周囲rfフィードおよび対称rfリターン |
| KR101971312B1 (ko) * | 2011-11-23 | 2019-04-22 | 램 리써치 코포레이션 | 다중 존 가스 주입 상부 전극 시스템 |
| KR102011535B1 (ko) | 2011-11-24 | 2019-08-16 | 램 리써치 코포레이션 | 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버 |
| US9255322B2 (en) * | 2012-03-30 | 2016-02-09 | Applied Materials, Inc. | Substrate processing system having symmetric RF distribution and return paths |
| MX351564B (es) | 2012-10-04 | 2017-10-18 | Solarcity Corp | Dispositivos fotovoltaicos con rejillas metálicas galvanizadas. |
| FR2996679A1 (fr) * | 2012-10-09 | 2014-04-11 | St Microelectronics Crolles 2 | Procede de depot d'une couche de tialn peu diffusive et grille isolee comprenant une telle couche |
| US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
| US9265184B2 (en) * | 2012-11-20 | 2016-02-16 | ETS-Lindgren Inc. | Fluid conduit through RF shield |
| CN103849848B (zh) * | 2012-11-28 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 物理气相沉积装置 |
| US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
| US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
| US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9593410B2 (en) * | 2013-03-05 | 2017-03-14 | Applied Materials, Inc. | Methods and apparatus for stable substrate processing with multiple RF power supplies |
| US9580795B2 (en) * | 2013-03-05 | 2017-02-28 | Applied Materials, Inc. | Sputter source for use in a semiconductor process chamber |
| KR101326386B1 (ko) * | 2013-05-03 | 2013-11-11 | 이천용 | 반도체 공정챔버 |
| US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| US10804083B2 (en) * | 2014-07-09 | 2020-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cathode assembly, physical vapor deposition system, and method for physical vapor deposition |
| US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
| US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
| US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| USD836572S1 (en) | 2016-09-30 | 2018-12-25 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US20180294139A1 (en) * | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Gas phase particle reduction in pecvd chamber |
| CN109207942B (zh) * | 2017-07-04 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 一种金属膜层沉积方法和金属膜层沉积设备 |
| CN107475677A (zh) * | 2017-08-18 | 2017-12-15 | 嘉兴申宁精密科技有限公司 | 一种采用物理气相沉积工艺溅镀涂层的装置 |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| USD851613S1 (en) | 2017-10-05 | 2019-06-18 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US12288673B2 (en) | 2017-11-29 | 2025-04-29 | COMET Technologies USA, Inc. | Retuning for impedance matching network control |
| KR102644960B1 (ko) | 2017-11-29 | 2024-03-07 | 코멧 테크놀로지스 유에스에이, 인크. | 임피던스 매칭 네트워크 제어를 위한 리튜닝 |
| USD868124S1 (en) * | 2017-12-11 | 2019-11-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| USD877101S1 (en) | 2018-03-09 | 2020-03-03 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US11527385B2 (en) | 2021-04-29 | 2022-12-13 | COMET Technologies USA, Inc. | Systems and methods for calibrating capacitors of matching networks |
| US11114279B2 (en) | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
| US11107661B2 (en) | 2019-07-09 | 2021-08-31 | COMET Technologies USA, Inc. | Hybrid matching network topology |
| US11596309B2 (en) | 2019-07-09 | 2023-03-07 | COMET Technologies USA, Inc. | Hybrid matching network topology |
| USD908645S1 (en) | 2019-08-26 | 2021-01-26 | Applied Materials, Inc. | Sputtering target for a physical vapor deposition chamber |
| EP4022656A4 (en) | 2019-08-28 | 2023-10-04 | Comet Technologies USA, Inc | HIGH POWER LOW FREQUENCY COILS |
| US11830708B2 (en) | 2020-01-10 | 2023-11-28 | COMET Technologies USA, Inc. | Inductive broad-band sensors for electromagnetic waves |
| US12027351B2 (en) | 2020-01-10 | 2024-07-02 | COMET Technologies USA, Inc. | Plasma non-uniformity detection |
| US11887820B2 (en) | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| US11521832B2 (en) | 2020-01-10 | 2022-12-06 | COMET Technologies USA, Inc. | Uniformity control for radio frequency plasma processing systems |
| US11670488B2 (en) | 2020-01-10 | 2023-06-06 | COMET Technologies USA, Inc. | Fast arc detecting match network |
| US11961711B2 (en) | 2020-01-20 | 2024-04-16 | COMET Technologies USA, Inc. | Radio frequency match network and generator |
| US11605527B2 (en) | 2020-01-20 | 2023-03-14 | COMET Technologies USA, Inc. | Pulsing control match network |
| WO2021148195A1 (en) * | 2020-01-24 | 2021-07-29 | Evatec Ag | Phase shift controlled sputter system and process |
| KR20250161032A (ko) * | 2020-02-04 | 2025-11-14 | 램 리써치 코포레이션 | 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열 |
| USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| US11373844B2 (en) | 2020-09-28 | 2022-06-28 | COMET Technologies USA, Inc. | Systems and methods for repetitive tuning of matching networks |
| USD940765S1 (en) | 2020-12-02 | 2022-01-11 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| USD1072774S1 (en) | 2021-02-06 | 2025-04-29 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US12057296B2 (en) | 2021-02-22 | 2024-08-06 | COMET Technologies USA, Inc. | Electromagnetic field sensing device |
| USD1007449S1 (en) | 2021-05-07 | 2023-12-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US11761078B2 (en) | 2021-05-25 | 2023-09-19 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US11923175B2 (en) | 2021-07-28 | 2024-03-05 | COMET Technologies USA, Inc. | Systems and methods for variable gain tuning of matching networks |
| JP2024532773A (ja) * | 2021-08-12 | 2024-09-10 | ラム リサーチ コーポレーション | 対称的なrf戻り経路を提供するプロセスモジュールチャンバ |
| USD1038901S1 (en) | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| US12243717B2 (en) | 2022-04-04 | 2025-03-04 | COMET Technologies USA, Inc. | Variable reactance device having isolated gate drive power supplies |
| US12040139B2 (en) | 2022-05-09 | 2024-07-16 | COMET Technologies USA, Inc. | Variable capacitor with linear impedance and high voltage breakdown |
| US11657980B1 (en) | 2022-05-09 | 2023-05-23 | COMET Technologies USA, Inc. | Dielectric fluid variable capacitor |
| USD1053230S1 (en) | 2022-05-19 | 2024-12-03 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| US12051549B2 (en) | 2022-08-02 | 2024-07-30 | COMET Technologies USA, Inc. | Coaxial variable capacitor |
| US12132435B2 (en) | 2022-10-27 | 2024-10-29 | COMET Technologies USA, Inc. | Method for repeatable stepper motor homing |
| WO2026064168A1 (en) * | 2024-09-17 | 2026-03-26 | Lam Research Corporation | Grounding features for wafer processing equipment |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US15510A (en) * | 1856-08-12 | John w | ||
| US231625A (en) * | 1880-08-24 | Damper for cooking-stoves | ||
| US15509A (en) * | 1856-08-12 | Odometeb | ||
| US211659A (en) * | 1879-01-28 | Improvement in spring bed-bottoms | ||
| US291717A (en) * | 1884-01-08 | John geeives | ||
| US97945A (en) * | 1869-12-14 | Improved mechanism for driving cotton-gins | ||
| US268816A (en) * | 1882-12-12 | Rotary differential force-pump | ||
| US72604A (en) * | 1867-12-24 | James cole | ||
| US215279A (en) * | 1879-05-13 | Improvement in ventilators | ||
| JPH0669026B2 (ja) * | 1985-09-26 | 1994-08-31 | 株式会社芝浦製作所 | 半導体処理装置 |
| US5482610A (en) * | 1991-11-14 | 1996-01-09 | Leybold Aktiengesellschaft | Cathode for coating a substrate |
| FR2743246B1 (fr) * | 1995-12-29 | 1998-01-23 | Thomson Broadcast Systems | Procede et dispositif de compression de donnees numeriques |
| US6375810B2 (en) * | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
| JP4435896B2 (ja) * | 1999-03-17 | 2010-03-24 | キヤノンアネルバ株式会社 | 高周波スパッタリング装置及び薄膜作成方法 |
| US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
| EP1254970A1 (de) * | 2001-05-03 | 2002-11-06 | Unaxis Balzers Aktiengesellschaft | Magnetronsputterquelle mit mehrteiligem Target |
| US20050022736A1 (en) * | 2003-07-29 | 2005-02-03 | Lam Research Inc., A Delaware Corporation | Method for balancing return currents in plasma processing apparatus |
| JP4040607B2 (ja) | 2004-06-14 | 2008-01-30 | 芝浦メカトロニクス株式会社 | スパッタリング装置及び方法並びにスパッタリング制御用プログラム |
| US7820020B2 (en) * | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
| JP4537899B2 (ja) * | 2005-07-05 | 2010-09-08 | 富士通セミコンダクター株式会社 | 成膜方法及び半導体装置の製造方法 |
| JP2008047762A (ja) * | 2006-08-18 | 2008-02-28 | Showa Denko Kk | Iii族窒化物化合物半導体発光素子の製造方法、及びiii族窒化物化合物半導体発光素子、並びにランプ |
| CN100576438C (zh) * | 2006-11-15 | 2009-12-30 | 应用材料股份有限公司 | 增强磁控制等离子体径向分布的约束挡板和流动均衡器 |
| US20080121516A1 (en) | 2006-11-29 | 2008-05-29 | Jaydeep Sarkar | Method and apparatus for treating sputtering target to reduce burn-in time and sputtering targets made thereby |
| US8992741B2 (en) * | 2008-08-08 | 2015-03-31 | Applied Materials, Inc. | Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target |
| JP2009052145A (ja) * | 2008-10-10 | 2009-03-12 | Canon Anelva Corp | スパッタリング装置 |
-
2008
- 2008-10-17 US US12/253,603 patent/US8070925B2/en active Active
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2009
- 2009-10-02 KR KR1020117011118A patent/KR101284787B1/ko not_active Expired - Fee Related
- 2009-10-02 CN CN2009801439352A patent/CN102203908B/zh not_active Expired - Fee Related
- 2009-10-02 WO PCT/US2009/059335 patent/WO2010045037A2/en not_active Ceased
- 2009-10-02 JP JP2011532144A patent/JP5345221B2/ja not_active Expired - Fee Related
- 2009-10-14 TW TW098134829A patent/TWI388001B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP5345221B2 (ja) | 2013-11-20 |
| CN102203908A (zh) | 2011-09-28 |
| KR20110084948A (ko) | 2011-07-26 |
| CN102203908B (zh) | 2013-10-02 |
| US20100096261A1 (en) | 2010-04-22 |
| WO2010045037A8 (en) | 2011-05-26 |
| KR101284787B1 (ko) | 2013-07-10 |
| JP2012505968A (ja) | 2012-03-08 |
| US8070925B2 (en) | 2011-12-06 |
| WO2010045037A2 (en) | 2010-04-22 |
| WO2010045037A3 (en) | 2010-07-01 |
| TW201030811A (en) | 2010-08-16 |
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