CN102203908B - 具有圆形地对称于溅射靶材的rf馈给及dc馈给的物理气相沉积反应器 - Google Patents

具有圆形地对称于溅射靶材的rf馈给及dc馈给的物理气相沉积反应器 Download PDF

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Publication number
CN102203908B
CN102203908B CN2009801439352A CN200980143935A CN102203908B CN 102203908 B CN102203908 B CN 102203908B CN 2009801439352 A CN2009801439352 A CN 2009801439352A CN 200980143935 A CN200980143935 A CN 200980143935A CN 102203908 B CN102203908 B CN 102203908B
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radially
hollow cylinder
connecting rod
top cover
radio frequency
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CN102203908A (zh
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L·霍雷查克
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2009801439352A 2008-10-17 2009-10-02 具有圆形地对称于溅射靶材的rf馈给及dc馈给的物理气相沉积反应器 Expired - Fee Related CN102203908B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/253,603 US8070925B2 (en) 2008-10-17 2008-10-17 Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US12/253,603 2008-10-17
PCT/US2009/059335 WO2010045037A2 (en) 2008-10-17 2009-10-02 Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target

Publications (2)

Publication Number Publication Date
CN102203908A CN102203908A (zh) 2011-09-28
CN102203908B true CN102203908B (zh) 2013-10-02

Family

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CN2009801439352A Expired - Fee Related CN102203908B (zh) 2008-10-17 2009-10-02 具有圆形地对称于溅射靶材的rf馈给及dc馈给的物理气相沉积反应器

Country Status (6)

Country Link
US (1) US8070925B2 (https=)
JP (1) JP5345221B2 (https=)
KR (1) KR101284787B1 (https=)
CN (1) CN102203908B (https=)
TW (1) TWI388001B (https=)
WO (1) WO2010045037A2 (https=)

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Publication number Publication date
JP5345221B2 (ja) 2013-11-20
CN102203908A (zh) 2011-09-28
TWI388001B (zh) 2013-03-01
KR20110084948A (ko) 2011-07-26
US20100096261A1 (en) 2010-04-22
WO2010045037A8 (en) 2011-05-26
KR101284787B1 (ko) 2013-07-10
JP2012505968A (ja) 2012-03-08
US8070925B2 (en) 2011-12-06
WO2010045037A2 (en) 2010-04-22
WO2010045037A3 (en) 2010-07-01
TW201030811A (en) 2010-08-16

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