JP5345221B2 - スパッタターゲットへの円対称のｒｆ供給およびｄｃ供給を用いる物理蒸着リアクタ - Google Patents

スパッタターゲットへの円対称のｒｆ供給およびｄｃ供給を用いる物理蒸着リアクタ Download PDF

Info

Publication number
JP5345221B2
JP5345221B2 JP2011532144A JP2011532144A JP5345221B2 JP 5345221 B2 JP5345221 B2 JP 5345221B2 JP 2011532144 A JP2011532144 A JP 2011532144A JP 2011532144 A JP2011532144 A JP 2011532144A JP 5345221 B2 JP5345221 B2 JP 5345221B2
Authority
JP
Japan
Prior art keywords
conductive
hollow cylinder
housing
radial
connecting rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011532144A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012505968A5 (https=
JP2012505968A (ja
Inventor
ダニエル， ジェイ． ホフマン，
イン ルイ，
カール， エム． ブラウン，
ジョン ピピトーン，
ララ ハウリルチャック，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012505968A publication Critical patent/JP2012505968A/ja
Publication of JP2012505968A5 publication Critical patent/JP2012505968A5/ja
Application granted granted Critical
Publication of JP5345221B2 publication Critical patent/JP5345221B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011532144A 2008-10-17 2009-10-02 スパッタターゲットへの円対称のｒｆ供給およびｄｃ供給を用いる物理蒸着リアクタ Expired - Fee Related JP5345221B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/253,603 US8070925B2 (en) 2008-10-17 2008-10-17 Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US12/253,603 2008-10-17
PCT/US2009/059335 WO2010045037A2 (en) 2008-10-17 2009-10-02 Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target

Publications (3)

Publication Number Publication Date
JP2012505968A JP2012505968A (ja) 2012-03-08
JP2012505968A5 JP2012505968A5 (https=) 2013-04-11
JP5345221B2 true JP5345221B2 (ja) 2013-11-20

Family

ID=42107132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011532144A Expired - Fee Related JP5345221B2 (ja) 2008-10-17 2009-10-02 スパッタターゲットへの円対称のｒｆ供給およびｄｃ供給を用いる物理蒸着リアクタ

Country Status (6)

Country Link
US (1) US8070925B2 (https=)
JP (1) JP5345221B2 (https=)
KR (1) KR101284787B1 (https=)
CN (1) CN102203908B (https=)
TW (1) TWI388001B (https=)
WO (1) WO2010045037A2 (https=)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102439697B (zh) * 2009-04-03 2015-08-19 应用材料公司 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US8795487B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
US8795488B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Apparatus for physical vapor deposition having centrally fed RF energy
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
TWI554630B (zh) * 2010-07-02 2016-10-21 應用材料股份有限公司 減少沉積不對稱性的沉積設備及方法
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US8563428B2 (en) * 2010-09-17 2013-10-22 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US20120097104A1 (en) * 2010-10-20 2012-04-26 COMET Technologies USA, Inc. Rf impedance matching network with secondary dc input
US8491759B2 (en) * 2010-10-20 2013-07-23 COMET Technologies USA, Inc. RF impedance matching network with secondary frequency and sub-harmonic variant
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
JP6276697B2 (ja) * 2011-11-23 2018-02-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 対称的なｒｆ供給のための周囲ｒｆフィードおよび対称ｒｆリターン
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US9255322B2 (en) * 2012-03-30 2016-02-09 Applied Materials, Inc. Substrate processing system having symmetric RF distribution and return paths
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
FR2996679A1 (fr) * 2012-10-09 2014-04-11 St Microelectronics Crolles 2 Procede de depot d'une couche de tialn peu diffusive et grille isolee comprenant une telle couche
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9265184B2 (en) * 2012-11-20 2016-02-16 ETS-Lindgren Inc. Fluid conduit through RF shield
CN103849848B (zh) * 2012-11-28 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 物理气相沉积装置
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9593410B2 (en) * 2013-03-05 2017-03-14 Applied Materials, Inc. Methods and apparatus for stable substrate processing with multiple RF power supplies
US9580795B2 (en) * 2013-03-05 2017-02-28 Applied Materials, Inc. Sputter source for use in a semiconductor process chamber
KR101326386B1 (ko) * 2013-05-03 2013-11-11 이천용 반도체 공정챔버
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10804083B2 (en) * 2014-07-09 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Cathode assembly, physical vapor deposition system, and method for physical vapor deposition
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US20180294139A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Gas phase particle reduction in pecvd chamber
CN109207942B (zh) * 2017-07-04 2023-08-18 北京北方华创微电子装备有限公司 一种金属膜层沉积方法和金属膜层沉积设备
CN107475677A (zh) * 2017-08-18 2017-12-15 嘉兴申宁精密科技有限公司 一种采用物理气相沉积工艺溅镀涂层的装置
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
KR102644960B1 (ko) 2017-11-29 2024-03-07 코멧 테크놀로지스 유에스에이, 인크. 임피던스 매칭 네트워크 제어를 위한 리튜닝
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
EP4022656A4 (en) 2019-08-28 2023-10-04 Comet Technologies USA, Inc HIGH POWER LOW FREQUENCY COILS
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US12027351B2 (en) 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US11887820B2 (en) 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
WO2021148195A1 (en) * 2020-01-24 2021-07-29 Evatec Ag Phase shift controlled sputter system and process
KR20250161032A (ko) * 2020-02-04 2025-11-14 램 리써치 코포레이션 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US11373844B2 (en) 2020-09-28 2022-06-28 COMET Technologies USA, Inc. Systems and methods for repetitive tuning of matching networks
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11761078B2 (en) 2021-05-25 2023-09-19 Applied Materials, Inc. Methods and apparatus for processing a substrate
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
JP2024532773A (ja) * 2021-08-12 2024-09-10 ラム リサーチ コーポレーション 対称的なｒｆ戻り経路を提供するプロセスモジュールチャンバ
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing
WO2026064168A1 (en) * 2024-09-17 2026-03-26 Lam Research Corporation Grounding features for wafer processing equipment

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US15510A (en) * 1856-08-12 John w
US231625A (en) * 1880-08-24 Damper for cooking-stoves
US15509A (en) * 1856-08-12 Odometeb
US211659A (en) * 1879-01-28 Improvement in spring bed-bottoms
US291717A (en) * 1884-01-08 John geeives
US97945A (en) * 1869-12-14 Improved mechanism for driving cotton-gins
US268816A (en) * 1882-12-12 Rotary differential force-pump
US72604A (en) * 1867-12-24 James cole
US215279A (en) * 1879-05-13 Improvement in ventilators
JPH0669026B2 (ja) * 1985-09-26 1994-08-31 株式会社芝浦製作所 半導体処理装置
US5482610A (en) * 1991-11-14 1996-01-09 Leybold Aktiengesellschaft Cathode for coating a substrate
FR2743246B1 (fr) * 1995-12-29 1998-01-23 Thomson Broadcast Systems Procede et dispositif de compression de donnees numeriques
US6375810B2 (en) * 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
JP4435896B2 (ja) * 1999-03-17 2010-03-24 キヤノンアネルバ株式会社 高周波スパッタリング装置及び薄膜作成方法
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
EP1254970A1 (de) * 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
JP4040607B2 (ja) 2004-06-14 2008-01-30 芝浦メカトロニクス株式会社 スパッタリング装置及び方法並びにスパッタリング制御用プログラム
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
JP4537899B2 (ja) * 2005-07-05 2010-09-08 富士通セミコンダクター株式会社 成膜方法及び半導体装置の製造方法
JP2008047762A (ja) * 2006-08-18 2008-02-28 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
CN100576438C (zh) * 2006-11-15 2009-12-30 应用材料股份有限公司 增强磁控制等离子体径向分布的约束挡板和流动均衡器
US20080121516A1 (en) 2006-11-29 2008-05-29 Jaydeep Sarkar Method and apparatus for treating sputtering target to reduce burn-in time and sputtering targets made thereby
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP2009052145A (ja) * 2008-10-10 2009-03-12 Canon Anelva Corp スパッタリング装置

Also Published As

Publication number Publication date
CN102203908A (zh) 2011-09-28
TWI388001B (zh) 2013-03-01
KR20110084948A (ko) 2011-07-26
CN102203908B (zh) 2013-10-02
US20100096261A1 (en) 2010-04-22
WO2010045037A8 (en) 2011-05-26
KR101284787B1 (ko) 2013-07-10
JP2012505968A (ja) 2012-03-08
US8070925B2 (en) 2011-12-06
WO2010045037A2 (en) 2010-04-22
WO2010045037A3 (en) 2010-07-01
TW201030811A (en) 2010-08-16

Similar Documents

Publication Publication Date Title
JP5345221B2 (ja) スパッタターゲットへの円対称のｒｆ供給およびｄｃ供給を用いる物理蒸着リアクタ
JP6238288B2 (ja) 堆積装置および堆積の非対称性を低減させる方法
KR101376671B1 (ko) 물리 기상 증착 반응기
KR101687565B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US5605637A (en) Adjustable dc bias control in a plasma reactor
US10276348B2 (en) Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system
US6462482B1 (en) Plasma processing system for sputter deposition applications
US8486242B2 (en) Deposition apparatus and methods to reduce deposition asymmetry
WO2008065744A1 (en) Plasma processing apparatus
EP3794628B1 (en) Plasma processing tool
US6210539B1 (en) Method and apparatus for producing a uniform density plasma above a substrate
KR20060090745A (ko) 플라즈마 처리 장치용 측면 ｒｆ 코일 및 측면 히터
JP4588212B2 (ja) 重複端部を有するコイルを備えるスパッタリング装置
US20030116432A1 (en) Adjustable throw reactor
US6409890B1 (en) Method and apparatus for forming a uniform layer on a workpiece during sputtering
CN119008369A (zh) 一种等离子体处理装置及方法
KR101239776B1 (ko) 타깃에 인가되는 ｒｆ 소스 파워에 의한 물리 기상 증착플라즈마 반응기
CN115565841B (zh) 防止电弧放电的下电极组件、等离子体处理装置及方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130225

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20130225

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20130326

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130716

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130813

R150 Certificate of patent or registration of utility model

Ref document number: 5345221

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees