TWI385827B - 發出輻射的半導體晶片 - Google Patents

發出輻射的半導體晶片 Download PDF

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Publication number
TWI385827B
TWI385827B TW097133529A TW97133529A TWI385827B TW I385827 B TWI385827 B TW I385827B TW 097133529 A TW097133529 A TW 097133529A TW 97133529 A TW97133529 A TW 97133529A TW I385827 B TWI385827 B TW I385827B
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TW
Taiwan
Prior art keywords
layer
semiconductor wafer
structural
region
radiation
Prior art date
Application number
TW097133529A
Other languages
English (en)
Chinese (zh)
Other versions
TW200917534A (en
Inventor
克里斯托夫艾克勒
阿佛列雷爾
克里斯丁倫波茲
Original Assignee
歐斯朗奧托半導體股份有限公司
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Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW200917534A publication Critical patent/TW200917534A/zh
Application granted granted Critical
Publication of TWI385827B publication Critical patent/TWI385827B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
TW097133529A 2007-09-28 2008-09-02 發出輻射的半導體晶片 TWI385827B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007046497 2007-09-28
DE102007060204.0A DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip

Publications (2)

Publication Number Publication Date
TW200917534A TW200917534A (en) 2009-04-16
TWI385827B true TWI385827B (zh) 2013-02-11

Family

ID=40435571

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097133529A TWI385827B (zh) 2007-09-28 2008-09-02 發出輻射的半導體晶片

Country Status (9)

Country Link
US (1) US8340146B2 (enExample)
EP (2) EP2193556B1 (enExample)
JP (2) JP2010541215A (enExample)
KR (2) KR101567613B1 (enExample)
CN (1) CN101809772B (enExample)
DE (2) DE102007063957B3 (enExample)
PL (1) PL2193556T3 (enExample)
TW (1) TWI385827B (enExample)
WO (1) WO2009039811A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
KR101689468B1 (ko) * 2015-05-19 2016-12-26 주식회사 솔탑 라이다식 운고계 장치 및 라이다식 운고계 장치 구현 방법
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP7222217B2 (ja) 2018-10-30 2023-02-15 Tdk株式会社 積層コイル部品
CN115775859A (zh) * 2022-11-09 2023-03-10 华灿光电（浙江）有限公司 改善光串扰的发光二极管及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664748A (en) * 1984-11-01 1987-05-12 Fuji Electric Company Ltd. Surface roughening method
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
US20040264533A1 (en) * 2003-06-27 2004-12-30 Hiroaki Matsumura Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
US20060163595A1 (en) * 2005-01-25 2006-07-27 Min-Hsun Hsieh Light emitting device
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755357B2 (ja) * 1991-08-30 1998-05-20 シャープ株式会社 半導体レーザ素子
JP3448441B2 (ja) * 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
EP1012933B1 (en) 1997-01-27 2004-09-22 International Business Machines Corporation Laser device
JP5019664B2 (ja) * 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
JP3633447B2 (ja) * 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4117778B2 (ja) * 2002-09-27 2008-07-16 日本電信電話株式会社 半導体光素子
JP4830315B2 (ja) 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
KR100674836B1 (ko) 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
JP4852972B2 (ja) * 2005-10-26 2012-01-11 パナソニック電工株式会社 光学部品の製造方法及び発光素子
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP4959203B2 (ja) * 2006-02-17 2012-06-20 昭和電工株式会社 発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664748A (en) * 1984-11-01 1987-05-12 Fuji Electric Company Ltd. Surface roughening method
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
US20040264533A1 (en) * 2003-06-27 2004-12-30 Hiroaki Matsumura Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
US20060163595A1 (en) * 2005-01-25 2006-07-27 Min-Hsun Hsieh Light emitting device
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices

Also Published As

Publication number Publication date
JP2014057113A (ja) 2014-03-27
JP2010541215A (ja) 2010-12-24
KR20100089833A (ko) 2010-08-12
WO2009039811A3 (de) 2009-09-03
WO2009039811A2 (de) 2009-04-02
KR20150104637A (ko) 2015-09-15
PL2193556T3 (pl) 2017-12-29
KR101567613B1 (ko) 2015-11-09
DE102007060204A1 (de) 2009-04-16
TW200917534A (en) 2009-04-16
EP2193556A2 (de) 2010-06-09
CN101809772A (zh) 2010-08-18
EP3206239B1 (de) 2021-06-30
DE102007060204B4 (de) 2019-02-28
EP3206239A1 (de) 2017-08-16
US20100278203A1 (en) 2010-11-04
KR101718271B1 (ko) 2017-03-20
DE102007063957B3 (de) 2022-10-27
EP2193556B1 (de) 2017-07-26
US8340146B2 (en) 2012-12-25
CN101809772B (zh) 2012-09-05

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