CN101809772B - 发射辐射的半导体芯片 - Google Patents

发射辐射的半导体芯片 Download PDF

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Publication number
CN101809772B
CN101809772B CN2008801093260A CN200880109326A CN101809772B CN 101809772 B CN101809772 B CN 101809772B CN 2008801093260 A CN2008801093260 A CN 2008801093260A CN 200880109326 A CN200880109326 A CN 200880109326A CN 101809772 B CN101809772 B CN 101809772B
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radiation
semiconductor chip
layer
structured
structural elements
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CN2008801093260A
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Chinese (zh)
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CN101809772A (zh
Inventor
A·莱利
C·埃克勒
C·鲁姆博尔茨
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CN2008801093260A 2007-09-28 2008-08-27 发射辐射的半导体芯片 Active CN101809772B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007046497.7 2007-09-28
DE102007046497 2007-09-28
DE102007060204.0A DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip
DE102007060204.0 2007-12-14
PCT/DE2008/001423 WO2009039811A2 (de) 2007-09-28 2008-08-27 Strahlung emittierender halbleiterchip

Publications (2)

Publication Number Publication Date
CN101809772A CN101809772A (zh) 2010-08-18
CN101809772B true CN101809772B (zh) 2012-09-05

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CN2008801093260A Active CN101809772B (zh) 2007-09-28 2008-08-27 发射辐射的半导体芯片

Country Status (9)

Country Link
US (1) US8340146B2 (enExample)
EP (2) EP2193556B1 (enExample)
JP (2) JP2010541215A (enExample)
KR (2) KR101567613B1 (enExample)
CN (1) CN101809772B (enExample)
DE (2) DE102007060204B4 (enExample)
PL (1) PL2193556T3 (enExample)
TW (1) TWI385827B (enExample)
WO (1) WO2009039811A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
KR101689468B1 (ko) * 2015-05-19 2016-12-26 주식회사 솔탑 라이다식 운고계 장치 및 라이다식 운고계 장치 구현 방법
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP7222217B2 (ja) 2018-10-30 2023-02-15 Tdk株式会社 積層コイル部品
CN115775859A (zh) * 2022-11-09 2023-03-10 华灿光电（浙江）有限公司 改善光串扰的发光二极管及其制备方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
EP0180222A2 (en) * 1984-11-01 1986-05-07 Fuji Electric Corporate Research And Development Ltd. Surface roughening method
JPH10163525A (ja) 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 発光装置
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices

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JP2755357B2 (ja) * 1991-08-30 1998-05-20 シャープ株式会社 半導体レーザ素子
WO1998033249A1 (en) 1997-01-27 1998-07-30 International Business Machines Corporation Laser device
JP5019664B2 (ja) * 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
JP3633447B2 (ja) * 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
JP4117778B2 (ja) * 2002-09-27 2008-07-16 日本電信電話株式会社 半導体光素子
CN100379105C (zh) * 2003-06-27 2008-04-02 日亚化学工业株式会社 具有电流狭窄层的氮化物半导体激光器元件及其制造方法
TWI330413B (en) * 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
JP4830315B2 (ja) 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
KR100674836B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
JP4852972B2 (ja) * 2005-10-26 2012-01-11 パナソニック電工株式会社 光学部品の製造方法及び発光素子
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP4959203B2 (ja) * 2006-02-17 2012-06-20 昭和電工株式会社 発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180222A2 (en) * 1984-11-01 1986-05-07 Fuji Electric Corporate Research And Development Ltd. Surface roughening method
JPH10163525A (ja) 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 発光装置
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices

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REINER WINDISCH ET AL.40% EFFICIENT THIN-FILM SURFACE-TEXTURED LIGHT-EMITTING DIODES BY OPTIMIZATION OF NATURAL LITHOGRAPHY.《IEEE TRANSACTIONS ON ELECTRON DEVICES》.2000,第47卷(第7期),1492-1498. *
SCHNITZER I ET AL.30% EXTERNAL QUANTUM EFFICIENCY FROM SURFACE TEXTURED,THIN-FILM LIGHT-EMITTING DIODES.《APPLIED PHYSICS LETTERS》.1993,第63卷(第16期),2174-2176. *

Also Published As

Publication number Publication date
EP2193556A2 (de) 2010-06-09
KR101567613B1 (ko) 2015-11-09
EP2193556B1 (de) 2017-07-26
CN101809772A (zh) 2010-08-18
KR101718271B1 (ko) 2017-03-20
TWI385827B (zh) 2013-02-11
DE102007060204B4 (de) 2019-02-28
US20100278203A1 (en) 2010-11-04
PL2193556T3 (pl) 2017-12-29
TW200917534A (en) 2009-04-16
WO2009039811A3 (de) 2009-09-03
EP3206239B1 (de) 2021-06-30
DE102007060204A1 (de) 2009-04-16
WO2009039811A2 (de) 2009-04-02
EP3206239A1 (de) 2017-08-16
JP2014057113A (ja) 2014-03-27
DE102007063957B3 (de) 2022-10-27
JP2010541215A (ja) 2010-12-24
US8340146B2 (en) 2012-12-25
KR20100089833A (ko) 2010-08-12
KR20150104637A (ko) 2015-09-15

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