TWI385274B - 氣相成長裝置及氣相成長方法 - Google Patents

氣相成長裝置及氣相成長方法 Download PDF

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Publication number
TWI385274B
TWI385274B TW99109180A TW99109180A TWI385274B TW I385274 B TWI385274 B TW I385274B TW 99109180 A TW99109180 A TW 99109180A TW 99109180 A TW99109180 A TW 99109180A TW I385274 B TWI385274 B TW I385274B
Authority
TW
Taiwan
Prior art keywords
substrate
gas
shower
plate
shower plate
Prior art date
Application number
TW99109180A
Other languages
English (en)
Chinese (zh)
Other versions
TW201109464A (en
Inventor
Toshinori Okada
Kazuhiro Uneyama
Hidekazu Sakagami
Toshiki Tsuboi
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW201109464A publication Critical patent/TW201109464A/zh
Application granted granted Critical
Publication of TWI385274B publication Critical patent/TWI385274B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW99109180A 2009-03-27 2010-03-26 氣相成長裝置及氣相成長方法 TWI385274B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009077944A JP4576466B2 (ja) 2009-03-27 2009-03-27 気相成長装置及び気相成長方法

Publications (2)

Publication Number Publication Date
TW201109464A TW201109464A (en) 2011-03-16
TWI385274B true TWI385274B (zh) 2013-02-11

Family

ID=42780612

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99109180A TWI385274B (zh) 2009-03-27 2010-03-26 氣相成長裝置及氣相成長方法

Country Status (3)

Country Link
JP (1) JP4576466B2 (ja)
TW (1) TWI385274B (ja)
WO (1) WO2010109915A1 (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI534291B (zh) * 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
CN103014668B (zh) * 2011-09-23 2014-12-24 理想能源设备(上海)有限公司 化学气相沉积装置
CN102352493A (zh) * 2011-11-16 2012-02-15 上海卓锐材料科技有限公司 一种实现mocvd喷淋均匀性的装置及应用
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
JP6118105B2 (ja) * 2012-12-27 2017-04-19 昭和電工株式会社 成膜装置および膜の製造方法
JP6009348B2 (ja) * 2012-12-27 2016-10-19 昭和電工株式会社 成膜装置
JP6009347B2 (ja) * 2012-12-27 2016-10-19 昭和電工株式会社 成膜装置
JP6087620B2 (ja) * 2012-12-27 2017-03-01 昭和電工株式会社 成膜装置
JP6103928B2 (ja) * 2012-12-27 2017-03-29 昭和電工株式会社 成膜装置
JP6134522B2 (ja) * 2013-01-30 2017-05-24 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
CN104498904B (zh) * 2014-12-29 2017-04-26 华中科技大学 一种用于mocvd设备的喷淋头
CN104789943A (zh) * 2015-04-01 2015-07-22 沈阳拓荆科技有限公司 控温型双气体通道均匀喷气喷淋板
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
JP6105114B1 (ja) 2016-03-14 2017-03-29 株式会社東芝 成膜装置、スパッタ装置、及びコリメータ
JP6718730B2 (ja) * 2016-04-19 2020-07-08 株式会社ニューフレアテクノロジー シャワープレート、気相成長装置及び気相成長方法
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
WO2019113478A1 (en) 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
DE102018126617A1 (de) 2018-10-25 2020-04-30 Aixtron Se Schirmplatte für einen CVD-Reaktor
DE102018130859A1 (de) * 2018-12-04 2020-06-04 Aixtron Se CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan
CN110809335A (zh) * 2019-11-14 2020-02-18 江苏实为半导体科技有限公司 一种具有保护功能的mocvd加热器源
CN112837985B (zh) * 2019-11-22 2023-01-24 中微半导体设备(上海)股份有限公司 上电极组件以及等离子体处理设备
CN114214608B (zh) * 2021-12-30 2024-02-23 东部超导科技（苏州）有限公司 一种用于生产超导带材的喷淋器
CN114672768A (zh) * 2022-03-29 2022-06-28 江苏微导纳米科技股份有限公司 薄膜沉积装置
CN115110064A (zh) * 2022-07-15 2022-09-27 长鑫存储技术有限公司 一种气体输入设备和气体输入方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11131239A (ja) * 1997-10-31 1999-05-18 Japan Aviation Electron Ind Ltd プラズマｃｖｄ成膜方法および装置
TW497157B (en) * 2000-06-09 2002-08-01 Toshiba Ceramics Co Method of growing a thin film in gaseous phase, and apparatus for growing a thin film in gaseous phase adapted to conducting the above method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132937U (ja) * 1989-04-07 1990-11-05
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3162955B2 (ja) * 1995-06-13 2001-05-08 東京エレクトロン株式会社 プラズマ処理装置
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11131239A (ja) * 1997-10-31 1999-05-18 Japan Aviation Electron Ind Ltd プラズマｃｖｄ成膜方法および装置
TW497157B (en) * 2000-06-09 2002-08-01 Toshiba Ceramics Co Method of growing a thin film in gaseous phase, and apparatus for growing a thin film in gaseous phase adapted to conducting the above method

Also Published As

Publication number Publication date
TW201109464A (en) 2011-03-16
WO2010109915A1 (ja) 2010-09-30
JP2010232402A (ja) 2010-10-14
JP4576466B2 (ja) 2010-11-10

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