TWI385274B - Vapor-phase growth apparatus and vapor-phase growth method - Google Patents

Description

Vapor phase growth device and vapor phase growth method

The present invention relates to a vapor phase growth apparatus and a vapor phase growth method such as a MOCVD (Metal Organic Chemical Vapor Deposition).

Previously, organic metal gases such as trimethylgallium (TMG) or trimethylaluminum (TMA) were used in the manufacture of light-emitting diodes, semiconductor lasers, solar devices for the universe, and high-speed devices using compound semiconductor materials. And a hydrogen compound gas such as ammonia (NH ₃ ), phosphine (PH ₃ ) or cesium (AsH ₃ ), which is introduced into the growth chamber as a material gas which contributes to film formation, and grows a compound semiconductor crystal by MOCVD (Metal Organic Chemical Vapor) Deposition) method.

The MOCVD method is a method in which a raw material gas is introduced into a growth chamber together with a carrier gas, heated, and a gas phase reaction is performed on a specific substrate to grow a compound semiconductor crystal on the substrate. In the production of a compound semiconductor crystal having an MOCVD method, there is often a demand for improving the quality of the grown compound semiconductor crystal, suppressing the cost, and maximizing the yield and productivity.

A schematic configuration of an example of a conventional vertical showerhead type MOCVD apparatus for MOCVD is illustrated in FIG.

In the MOCVD apparatus, a gas pipe 103 for introducing a reaction gas and an inert gas into the growth chamber 111 inside the reaction furnace 101 from the gas supply source 102 is connected to the upper portion of the growth chamber 111 inside the reaction furnace 101. The shower plate 110 is provided as a gas introduction portion, and the shower plate 110 includes a plurality of gas ejection holes for introducing a reaction gas and an inert gas into the growth chamber 111.

Further, a rotating shaft 112 that is rotatable by an actuator (not shown) is provided at the center of the lower portion of the growth chamber 111 of the reaction furnace 101, and is opposed to the shower plate 110 at the front end of the rotating shaft 112. The crystal holder 108 is mounted in a manner. A heater 109 for heating the crystal holder 108 is mounted below the wafer holder 108.

Further, a gas exhausting portion 104 for discharging the gas in the growth chamber 111 inside the reaction furnace 101 to the outside is provided in the lower portion of the reaction furnace 101. The gas exhaust unit 104 is connected to an exhaust gas treatment device 106 for detoxifying the discharged gas via a purge line 105.

In the above-described vertical showerhead type MOCVD apparatus, in the case of growing a compound semiconductor crystal, first, a substrate 107 is provided on the wafer holder 108, and the crystal holder 108 is rotated by the rotation of the rotary shaft 112, by Heating of the heater 109 heats the substrate 107 to a specific temperature via the crystal holder 108. Thereafter, a plurality of gas ejection holes formed in the shower plate 110 are introduced into the growth chamber 111 inside the reaction furnace 101 to introduce a reaction gas and an inert gas.

As a method of supplying a plurality of reaction gases to form a thin film by reacting on the substrate 107, a method of mixing a plurality of gases in the shower head from a plurality of gas ejection ports provided on the shower plate 110 toward the substrate has been conventionally employed. 107 ejects the reaction gas.

However, in this method, the surface of the shower plate 110 is heated due to the influence of heat from the substrate 107 and the crystal holder 108, so that the surface of the shower plate 110 A part of the chemical reaction is carried out. This causes a problem that a product is formed on the surface of the shower plate 110, causing the gas ejection holes of the shower plate 110 to be clogged by the product; and the adhering matter attached to the surface of the shower plate 110 is dropped onto the substrate 107 to cause a defect. .

In order to solve this problem, for example, in the reaction container 200 disclosed in Patent Document 1, as shown in FIG. 10, a plurality of reaction gases are supplied to each other in a state separated by the respective shower head tubes 201 and 202. The growth chamber 203 is provided with a cooling chamber 204 for cooling the respective cluster head tubes 201 and 202 on the growth chamber 203 side. In the reaction vessel 200, since a plurality of reactive gases are introduced, the gas mixture is less in the vicinity of the shower surface, and the shower surface can be cooled, which makes it difficult to cause vapor phase growth near the shower surface, thereby suppressing The resultant adheres to the shower surface.

In addition, it is necessary to form a film having a uniform film thickness distribution and a composition ratio distribution on the substrate for good productivity and reproducibility, and it is necessary to carry out a gas phase reaction on the substrate with a uniform temperature distribution on the substrate.

Further, it is necessary to prevent the raw material gases from reacting with each other before reaching the substrate to generate an addition compound, thereby preventing impurities from being mixed into the film and improving the working ratio.

On the other hand, in the reaction container 200 shown in FIG. 10 disclosed in Patent Document 1, it is possible to suppress the adhesion of the product on the shower surface, but the material gas is mixed by diffusion, and a gas phase reaction occurs, so that the shower surface is formed. A lot of products are attached, and if it is not cleaned regularly, it will cause blockage of the holes. Further, the adhered product falls onto the substrate to be processed, and impurities are mixed into the film. Further, at the time of cleaning, the shower head 205 itself is removed and cleaned. Therefore, when replacing, it is necessary to open the growth chamber 203 to the atmosphere, resulting in a drop in work rate. low.

Therefore, in the plasma CVD film forming apparatus disclosed in Patent Document 2, as shown in FIG. 11, a shower plate 301 containing pores corresponding to the shower head is used, and the screw clips 302 and 302 are fixed. A shower plate that covers the shower surface. Due to the presence of the shower plate 301, the deposit is formed on the cover layer, and by periodically replacing the shower plate 301, it is possible to prevent the occurrence of a drop of the deposit onto the substrate.

As described above, in the plasma CVD film forming apparatus disclosed in Patent Document 2, the shower plate 301 is attached to the shower surface, whereby even if deposits are generated, the shower plate 301 can be easily replaced only by replacing the shower plate 301. Compared with the case where the shower head itself is cleaned, the reduction in the work rate is also small.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 8-91989 (published on April 9, 1996)

[Patent Document 2] Japanese Laid-Open Patent Publication No. Hei 11-131239 (published on May 18, 1999)

However, if the method disclosed in the above-mentioned prior patent document 2 is used in the method disclosed in the above-mentioned prior patent document 1, the shower plate generates a region having a higher temperature due to the relationship between the substrate heater and the heating region. In the lower region, in the higher temperature region, a strong product is formed on the surface of the shower plate, and in the lower temperature region (outer peripheral region), in the shower plate table The surface is formed into a sheet-like product which is easily peeled off, and adheres to the substrate to be treated as a contaminant, thereby causing a problem of deterioration in film quality and uniformity.

The present invention has been made in view of the above problems, and an object thereof is to provide a shower plate on a surface of a shower head, which can suppress peeling of a product formed on a surface of a shower plate, thereby ensuring a film on a substrate to be processed. A vapor phase growth apparatus and a vapor phase growth method for uniformity and film reproducibility.

In order to solve the above problems, the vapor phase growth apparatus of the present invention comprises a substrate holding member on which a substrate to be processed is placed, a substrate heater for heating the substrate to be processed, and a shower with a plurality of gas ejection holes. And a shower plate placed on the shower head and provided with a plurality of plate holes; from the shower head, through the gas ejection hole of the shower head and the plate hole of the shower plate, the storage is Forming a gas in the growth chamber of the substrate to form a film on the substrate to be processed, wherein the substrate holding member is outside the region heated by the substrate heater and facing the substrate holding member. A low heat conduction region is formed on the surface of the shower head adjacent to the shower plate.

Further, in other words, the above-described configuration of the vapor phase growth apparatus of the present invention can be as follows. In other words, in order to solve the above problems, the vapor phase growth apparatus of the present invention includes a substrate holding member on which a substrate to be processed is placed, and a substrate heater that is heated by heating one of the substrate holding members. The substrate to be processed placed on the substrate holding member is heated; the shower head is provided with a plurality of gas ejection holes; and the shower plate is disposed on the plurality of gas ejection holes formed by the shower head Side, and equipped a plurality of plate holes communicating with the gas ejection holes; and the gas supply holes are supplied from the gas supply holes through the gas holes, and the gas is supplied to the growth chamber in which the substrate to be processed is stored through the plate holes, thereby being processed on the substrate to be processed Forming a film, characterized in that: a portion of the region between the shower head and the shower plate is provided with a low heat conduction region exhibiting lower thermal conductivity than a material constituting the shower plate, and the low heat conduction region is provided It is in a region opposed to the non-heating region existing outside the region heated by the substrate heater of the substrate holding member.

In the shower head, in order to suppress the adhesion of the product on the surface of the shower head, the outermost surface of the shower head is temperature-controlled by the refrigerant, and the area through which the refrigerant flows is spread over the entire surface of the shower head. The reason for this is that when only a part of the temperature is controlled, a temperature distribution occurs on the shower head surface, and the shower head is deformed by thermal expansion. In the case where the shower plate is provided on the shower head surface as described above, the substrate side to be processed is heated by the heat from the substrate heater, and the temperature rises, but the peripheral portion, particularly the side exhaust flow path. In the middle, the heating amount from the substrate heater is small, the temperature rise is low, and the surface is cooled from the surface in contact with the shower head, so the temperature in the outer peripheral region of the shower plate is lower than that in the central portion.

In the shower plate having such a temperature distribution, a product firmly fixed to the surface of the shower plate is formed in a region having a high temperature in the center, and a sheet is formed on a region having a low temperature in the periphery. The product that is easily peeled off.

According to the above aspect of the invention, the surface of the substrate holding member that is heated by the substrate heater is further outside the surface of the substrate holding member, and the shower head is disposed closer to the surface on which the shower plate is disposed. Formed The low heat conduction area, the cooling from the shower head disappears, and the temperature of the shower plate rises and the entire surface of the shower plate is formed by the heating from the substrate heater and the heat conduction from the plate hole installation region. Firmly fixed product. Therefore, it is possible to provide a vapor phase growth apparatus and a vapor phase growth method capable of suppressing peeling of products formed on the surface of the shower plate and ensuring film uniformity and film reproducibility on the substrate to be processed.

Other objects, features, and advantages of the present invention will be made apparent from the description appended claims. Further, the advantageous aspects of the present invention can be understood by referring to the following description with reference to the accompanying drawings.

As described above, the vapor phase growth apparatus of the present invention is disposed on the outer side of the substrate holding member heated by the substrate heater and on the opposite side of the substrate holding member, and the shower plate is disposed on the shower head. On the surface, a low heat conduction area is formed.

Further, as described above, the vapor phase growth method of the present invention is disposed on the outer side of the substrate holding member which is heated by the substrate heater, and is disposed on the opposite side of the substrate holding member, and is disposed on the shower head. On the surface of the plate, a low heat conduction region is formed, and a gas is supplied through the gas ejection hole and the plate hole to form a film.

Therefore, there is provided an effect of providing a vapor phase growth apparatus which is located outside the region heated by the substrate heater of the substrate holding member and which is opposed to the substrate holding member, and a vapor phase growth method. a surface on the surface of the shower head adjacent to the shower plate to form a low heat conduction region, thereby forming a solid fixation over the entire surface of the shower plate The substance suppresses peeling of the product formed on the surface of the shower plate, thereby ensuring film uniformity and film reproducibility on the substrate to be processed.

An embodiment of the present invention will be described below with reference to Fig. 1 . In the drawings, the same reference numerals are used to refer to the same or equivalent parts.

Fig. 1 shows an example of a schematic configuration of a vertical showerhead type MOCVD apparatus 10 which is an example of a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus as a vapor phase growth apparatus of the present invention.

As shown in Fig. 1, the MOCVD apparatus 10 of the present embodiment includes a reaction furnace 2 including a reaction chamber 1 as a growth chamber that is kept in an airtight state by isolating the inside from the atmosphere side, and a substrate holding member 4 provided above. The substrate to be processed 3 is placed inside the reaction chamber 1, and the shower head 20 faces the substrate holding member 4 and has a shower plate 30 on the bottom surface. Moreover, the reaction chamber 1 and the reaction external space 8 are separated by the reaction chamber partition wall 7 provided inside the reaction furnace 2, and the purge gas is introduced into the reaction external space 8 by the purge gas supply pipe 25. ₂ gas or H ₂ gas).

The substrate holding member 4 is attached to one end of the rotation transmitting member 5, and the rotation transmitting member 5 is rotatable by a rotating mechanism (not shown). Further, a substrate heater 6 is provided on the lower side of the substrate holding member 4.

When a thin film is formed on the main surface of the substrate 3 to be processed by the above-described MOCVD apparatus 10, a source gas (hereinafter simply referred to as a gas) is passed from the shower head 20, passes through the gas ejection holes H3 and H5, and is disposed in the cluster. The lower side of the shot 20 The plate holes 31 of the shower plate 30 are introduced into the reaction chamber 1. At this time, the substrate heater 6 is used to heat the substrate 3 to be processed via the substrate holding member 4, and the film formation chemical reaction on the substrate to be processed 3 is promoted, whereby a film is formed on the substrate 3 to be processed. The gas system on the substrate to be processed 3 is discharged from the gas discharge port 1a.

Next, the detailed configuration of the showerhead 20 and the shower plate 30, which are characteristic features of the present embodiment, will be described.

The shower head 20 includes: a first gas distribution space 23 filled with a first gas; a second gas distribution space 24 filled with a second gas different from the first gas; and a full charge of the first gas and the second gas The refrigerant space 22 of the cooled refrigerant; the spaces are sequentially stacked, that is, the refrigerant space 22, the first gas distribution space 23, and the second gas distribution space 24 are sequentially stacked from the side of the substrate 3 to be processed. Further, on the lower side of the shower head 20, that is, on the side of the substrate 3 to be processed, the shower plate 30 is disposed close to it.

In the second gas distribution space 24, a second gas is introduced from the second gas introduction port 24a, and the second gas system introduced into the second gas distribution space 24 passes through the first gas distribution space 23 and the refrigerant space 22, and The second gas supply pipe 24b including the gas discharge holes H5 communicating with the plate holes 31 of the shower plate 30 is discharged to the reaction chamber 1.

Further, in the first gas distribution space 23, the first gas is introduced from the first gas introduction port 23a, and the first gas system introduced into the first gas distribution space 23 passes through the refrigerant space 22, and passes through the shower plate. The first gas supply pipe 23b of the plurality of gas ejection holes H3 that the plate holes 31 communicate with is discharged to the reaction chamber 1.

Therefore, the first gas and the second gas system are not mixed in the shower head 20, but are independently ejected to the reaction chamber 1.

As shown in Fig. 1, the shower head 20 is sealed by an O-ring 7a in order to maintain an airtight state with the reaction furnace 2, and the shower head 20 and the reaction furnace 2 are detachably configured. Further, an O-ring 7b is provided between the first gas distribution space 23 and the second gas distribution space 24, and an O-ring 7c is also disposed between the second gas distribution space 24 and the top plate thereof, whereby each space can be Separate and maintain the airtight state of each space.

Moreover, the shower plate 30 is provided so as to be adhered to and fixed to the shower head lower wall surface 20a of the shower head 20 by a screw or the like (not shown).

The substrate heater 6 is used to heat the substrate 3 to be processed via the substrate holding member 4, and the film formation chemical reaction on the substrate 3 is promoted, whereby a film is formed on the substrate 3 to be processed, so that the temperature of the substrate holding member 4 itself Higher, the shower plate 30 on the opposite side is outside the region heated by the substrate heater 6 of the substrate holding member 4, that is, the heating region in FIG. 2 is heated by the substrate holding member 4. The shower plate 30 other than the opposing surface of the substrate holding member 4 is present in the non-heating region, and heat from the substrate holding member 4 is hard to reach. Further, the shower head 20 has the refrigerant space 22, and the entire surface of the shower head lower wall surface 20a of the shower head 20 is cooled by the refrigerant space 22, so that the temperature can be controlled to be uniform.

Fig. 5 is an enlarged view showing a portion A of Fig. 1 when a previous shower plate is provided. Since the temperature of the shower head lower wall surface 20a is kept uniform, the temperature of the shower plate wall surface 30a of the shower substrate 30 on the substrate 3 side to be processed is determined according to the heating from the substrate holding member 4. So about clusters The temperature of the wall surface 30a of the plate is higher in the heating zone in Fig. 5, and becomes lower in the non-heating zone. Fig. 6(a) is a partially enlarged photograph of the shower plate wall surface 30a after film formation in the case where the previous shower plate is provided. It can also be understood from Fig. 6(a) that in the heated region, no film peeling or the like in the product 44 is observed, but a perfect film is produced. However, in the non-heating region, a crystal having a film peeling in the visible product (hereinafter referred to as a peeling product 45) is formed. That is, the wall surface temperature of the shower plate 30a becomes lower in the non-heating region, so that the peeling product 45 as shown in Fig. 6(a) is generated.

On the other hand, in the present embodiment, the shower head lower wall surface 20a and the shower plate 30 of the shower head 20 are attached to the outside of the plate hole 31 of the shower plate 30, and the shower head lower wall surface 20a and the cluster are formed. A space portion 41 is formed on the opposing surface of the platen 30.

This configuration will be described based on Fig. 2 . Fig. 2 is an enlarged view showing a portion A in Fig. 1.

As shown in FIG. 2, in the shower plate 30, a pupil 42 is disposed outside the region where the plate hole 31 is provided, and the shower plate 30 is opposite to the shower head lower wall surface 20a. Thus, a space portion 41 is formed between the shower head lower wall surface 20a and the shower plate 30.

According to the above configuration, since the space portion 41 is formed between the shower head lower wall surface 20a and the shower plate 30 in the non-heating region, the temperature of the shower head lower wall surface 20a is not transmitted to the shower plate, and also exists. Since the heat is transferred due to heat conduction from the heating region, the temperature of the shower plate wall surface 30a can be kept high even in the non-heating region. Here, a space portion 41 is formed between the shower head lower wall surface 20a and the shower plate 30, and the space portion 41 can also be used low. Thermally conductive material.

Fig. 6(b) is a partially enlarged photograph of the shower plate wall surface 30a after film formation in the embodiment shown in Fig. 2. In the shower plate 30, a space portion 41 is provided. The effect is also understood from Fig. 6(b), and no film peeling or the like in the product 44 is observed in the heated region or the non-heated region, but a perfect film is produced. Therefore, peeling of the product formed on the surface of the shower plate 30 can be suppressed, and film uniformity and film reproducibility on the substrate 3 to be processed can be ensured.

Further, as shown in FIGS. 3 and 4, a through hole 43 may be formed on the surface of the bore 42 provided in the shower plate 30. Fig. 3 is a schematic view showing the overall configuration of a vapor phase growth apparatus in which a through hole is provided in a shower plate. Fig. 4 is an enlarged view showing an enlarged portion of a portion A of Fig. 3;

As shown in FIGS. 3 and 4, in the shower plate 30, the pupil 42 is disposed outside the region where the plate hole 31 is provided, and the shower plate 30 is disposed on the side opposite to the shower head lower wall surface 20a. A space portion 41 is formed between the shower head lower wall surface 20a and the shower plate 30, and a through hole 43 is formed in the pupil 42 surface. In the reaction furnace 2, the reaction chamber 1 and the reaction external space 8 are separated by the reaction chamber partition wall 7, and in the reaction external space 8, the purge gas (N ₂ gas or H ₂ is introduced by the purge gas supply pipe 25). Gas) The pressure of the reaction chamber 1 and the reaction external space 8 is adjusted to reduce the flow rate of the purge gas in order to lower the reaction chamber 1 side. According to the above configuration, the purge gas in the reaction external space 8 can be introduced into the reaction chamber 1 through the through holes 43.

According to the above configuration, the purge gas can be simply introduced outside the installation region of the plate hole 31 of the shower plate 30, and the gas outside the installation region of the plate hole 31 reaching the shower plate 30 can be scattered toward the gas discharge port 1a. Thereby suppressing showers The product 44 generated outside the installation area of the plate hole 31 of the plate 30. The product 44 formed on the surface of the shower plate 30 is thickened by the reverse film formation, and eventually peels off. However, according to the above configuration, since the amount of the product 44 is reduced, the number of times of film formation before peeling can be increased. Further, it is possible to prevent the gas precipitate shown in Fig. 5 from being precipitated, thereby reducing the peeling product 45 (heterocrystal) which is formed by the precipitation of the gas. Moreover, the product formed on the wall surface of the reaction chamber partition wall 7 can also be suppressed. Therefore, peeling of the product formed on the surface of the shower plate 30 can be suppressed, and film uniformity and film reproducibility on the substrate 3 to be processed can be ensured.

Further, the shape of the pupil 42 in the shower plate 30 on the side opposite to the shower head lower wall surface 20a may have a shape as shown in Figs. 7(a) and (b).

On the other hand, Fig. 8 is an enlarged view showing another embodiment of the A portion region in Fig. 1.

In the shower head 20, a bore 42 is provided on the outer side of the region of the shower plate 30 where the plate hole 31 is provided, whereby a space portion is formed between the shower head lower wall surface 20a and the shower plate 30. 41.

According to the above configuration, since the space portion 41 is provided between the shower head lower wall surface 20a and the shower plate 30 in the non-heating region, the temperature of the shower head lower wall surface 20a is not transmitted to the shower plate, and there is also a The heat transfer caused by the heat conduction in the heating zone allows the temperature of the shower plate wall surface 30a to remain high even in the non-heated region. Further, the introduction of the purge gas can be realized by providing the through holes 43 in the shower plate 30. Therefore, peeling of the product formed on the surface of the shower plate 30 can be suppressed, and film uniformity and film reproducibility on the substrate 3 to be processed can be ensured.

Furthermore, in the present invention, a reactor and a shower which constitute an MOCVD apparatus The shape of the plate and other members is of course not limited to the shape shown in FIG.

Further, the material of the shower plate 30 may be any material that has corrosion resistance and high temperature resistance to the reaction gas. For example, quartz, graphite, graphite which has been subjected to SiC coating, SiC, molybdenum, tungsten, or the like can be given. Among them, the thermal expansion coefficient of quartz is small, so that even when it is fixed to the shower head, it can prevent damage caused by thermal expansion, and has excellent corrosion resistance, so it can be corresponding to the attached product. The acid is used for wet cleaning and dry cleaning by HCl, and the shower plate can be used repeatedly, so it is the best material.

Further, the shower plate of the present invention may be integrally formed, but may be composed of a plurality of components, and may exhibit the same effect when formed of a plurality of components.

Moreover, the present invention can also be applied to an MOCVD apparatus which is a face-down type vapor phase growth apparatus, and the MOCVD apparatus includes a reaction furnace including a reaction chamber which is a growth chamber which is kept in an airtight state by isolating the inside from the atmosphere side. a substrate holding member disposed inside the reaction chamber to mount the substrate to be processed, and a shower head facing the substrate holding member and including a shower plate on the upper surface; the MOCVD device facing the substrate to be processed The reaction gas is supplied from below.

In the vapor phase growth apparatus of the present invention, the low heat conduction region can be formed by providing a space portion.

The space portion may be configured to be processed on the shower head side. For example, the pupil processing is performed outside the shower hole area of the shower head surface, whereby the surface of the shower plate can be connected to the area of the shower head provided with the shower hole. The touch may include a space portion in the region where the boring process is performed. Therefore, it is possible to provide a vapor phase growth apparatus and a vapor phase growth method which can suppress the peeling of the product formed on the surface of the shower plate and ensure film uniformity and film reproducibility on the substrate to be processed.

Further, it is preferable that the space portion is formed on the side of the shower plate.

On the side of the shower head, the flow path through which the refrigerant flows is formed on the outermost surface side of the shower head. Therefore, when the boring process is performed outside the shower hole area of the shower head surface, the refrigerant flow path is complicated. situation. Further, after the processing on the shower head side, it is very expensive to perform the re-production of the shower head in order to change the space portion, and it is also problematic to replace the trouble. However, the processing is performed on the shower plate side, for example, the pupil processing is performed on the shower hole area of the shower plate surface, whereby the shower plate can be in contact with the shower head surface in the shower hole area, in the cluster Outside the perforation area, a space portion can be formed by the boring processing portion. By processing the shower plate surface, the shape and distance of the space portion can be easily changed, and the replacement of the shower plate can be easily performed. Therefore, it is possible to provide a vapor phase growth apparatus which can easily investigate the shape and distance of an optimum space portion which can be prevented from being peeled off on the surface of the shower plate, and can ensure film uniformity and film reproducibility on the substrate to be processed. And gas phase growth methods.

In the vapor phase growth apparatus of the present invention, a plurality of through holes are provided in the shower plate in one of the low heat conduction regions, and communicate with the inside of the reaction furnace through the space portion. That is, it is preferable that a plurality of through holes that communicate the space portion and the growth chamber are provided in the low heat conduction region of the shower plate.

a plurality of through holes are provided in a space portion of the shower plate, thereby The purge gas introduced into the reaction gas passage outside the feed gas passage in the reaction chamber is introduced into the material gas flow passage through a plurality of through holes provided in the shower plate on the space portion region. The raw material gas cannot be ejected outside the shower hole region of the shower plate, so that the product formed on the surface of the shower plate becomes larger than the shower hole region. However, by introducing the purge gas into the material gas flow path through the plurality of through holes, the gas can be ejected from the entire surface of the shower plate, and the product formed on the surface of the shower plate can be reduced. Therefore, it is possible to provide a vapor phase growth apparatus and a vapor phase growth method which can suppress the peeling of the product formed on the surface of the shower plate, thereby ensuring film uniformity and film reproducibility on the substrate to be processed.

Further, it is preferable that a cooling portion is provided in a region of the shower head adjacent to the plurality of gas ejection holes.

Further, the present invention also includes a shower plate. In other words, the shower plate of the present invention is mounted on a gas supply unit in a growth chamber, and is characterized in that the shower plate is on a surface facing the gas supply portion and the outer periphery of the shower plate on the opposite surface The area is provided with a pupil.

The specific embodiments and examples of the detailed description of the present invention may be made clear by the technical scope of the present invention, and should not be limited to the above specific examples, and should be construed narrowly, and the spirit of the present invention and the patent application scope described below. It can be implemented with various changes.

[Industrial availability]

The present invention can be utilized in a vapor phase growth apparatus and a vapor phase growth method using a vertical MOCVD apparatus having a shower plate, which introduces gas from a peripheral portion into a space on a shower plate, and is self-assembled. Shooting plate A plurality of gas ejection holes supply a reaction gas to the surface of the substrate.

1‧‧‧Reaction room (growth room)

1a‧‧‧ gas discharge

2‧‧‧Reaction furnace

3‧‧‧Processed substrate

4‧‧‧Substrate holding member

5‧‧‧Rotating communication components

6‧‧‧Based heater

7‧‧‧Reaction chamber partition

8‧‧‧Responding to external space

10‧‧‧MOCVD device (gas phase growth device)

20‧‧‧Tufted head

20a‧‧‧The lower wall of the shower head

22‧‧‧Refrigerant space (cooling section)

23‧‧‧First gas distribution space

23a‧‧‧First gas inlet

23b‧‧‧First gas supply pipe

24‧‧‧Second gas distribution space

24a‧‧‧Second gas inlet

24b‧‧‧Second gas supply pipe

25‧‧‧Gas gas supply pipe

30‧‧‧Raining board

31, 32‧‧‧ board holes

31a, 32a‧‧‧ head side surface holes

32b‧‧‧Side side surface hole

41‧‧‧ Space Department (low thermal conductivity area)

42‧‧‧ pupil (low thermal conductivity area)

43‧‧‧through holes

44‧‧‧Products

45‧‧‧ peeling products

H3, H5‧‧‧ gas ejection holes

1 is a schematic view showing an embodiment of a vapor phase growth apparatus according to the present invention, and is a schematic view showing an overall configuration of a vapor phase growth apparatus; and FIG. 2 is a view showing a shower head and a shower plate in the vapor phase growth apparatus. The relationship between the space portions and the enlarged portion of the main portion of Fig. 1 is shown in Fig. 1. Fig. 3 shows an embodiment of the vapor phase growth device of the present invention, and shows that a through hole is provided in the shower plate. FIG. 4 is a schematic view showing a relationship between a shower head and a space portion of a shower plate in the vapor phase growth apparatus, and an enlarged view showing an essential part of a portion A of FIG. Fig. 5 is a view showing the relationship between the shower head and the space portion of the shower plate in the prior gas phase growth apparatus, and is an enlarged view showing an enlarged view of the essential part of the portion A of Fig. 1; Fig. 6(a) shows A photograph of the state of adhesion of the product on the surface of the previous shower plate of the comparative example, and Fig. 6(b) is a photograph showing the state of adhesion of the product on the surface of the shower plate of the present embodiment. Fig. 6 (c) is a photograph showing the state of adhesion of the product on the surface of the shower plate provided with a plurality of through holes in the embodiment; Fig. 7 (a) and (b) show the pupil of the shower plate. The modified example shows an enlarged view of a main part of the shower plate; and FIG. 8 shows another embodiment of the vapor phase growth device of the present invention, and shows an enlarged view of FIG. 1 when a pupil is provided on the shower head. An enlarged view of the main part of Part A; Figure 9 is a cross-sectional view showing the configuration of a gas phase growth apparatus of a prior art vertical showerhead type; and Figure 10 is a cross-sectional view showing the constitution of another gas phase growth apparatus of another vertical showerhead type; 11 is a cross-sectional view showing the configuration of another gas phase growth apparatus.

1‧‧‧Reaction room (growth room)

1a‧‧‧ gas discharge

2‧‧‧Reaction furnace

3‧‧‧Processed substrate

4‧‧‧Substrate holding member

5‧‧‧Rotating communication components

6‧‧‧Based heater

7‧‧‧Reaction chamber partition

7a, 7b, 7c‧‧O ring

8‧‧‧Responding to external space

10‧‧‧MOCVD device (gas phase growth device)

20‧‧‧Tufted head

20a‧‧‧The lower wall of the shower head

22‧‧‧Refrigerant space (cooling section)

23‧‧‧First gas distribution space

23a‧‧‧First gas inlet

24‧‧‧Second gas distribution space

24a‧‧‧Second gas inlet

24b‧‧‧Second gas supply pipe

25‧‧‧Gas gas supply pipe

30‧‧‧Raining board

31‧‧‧ board holes

31a‧‧‧ head side surface hole

41‧‧‧ Space Department (low thermal conductivity area)

42‧‧‧ pupil (low thermal conductivity area)

H3, H5‧‧‧ gas ejection holes

Claims (7)

A vapor phase growth apparatus comprising: a substrate holding member on which a substrate to be processed is placed; a substrate heater for heating the substrate to be processed; a shower head provided with a plurality of gas ejection holes; and a placement in the growth chamber a shower plate having a plurality of plate holes disposed on the shower head; and a growth chamber for accommodating the substrate to be processed through the gas ejection hole of the shower head and the plate hole of the shower plate from the shower head Providing a gas for forming a film on the substrate to be processed, wherein the substrate is further outward than a region heated by the substrate heater of the substrate holding member, and opposite to the substrate holding member, on the shower head A low heat conduction area is formed on the surface adjacent to the shower plate. The vapor phase growth device of claim 1, wherein the low heat conduction region is formed by providing a space portion. The vapor phase growth apparatus of claim 1, wherein the low heat conduction region is formed by providing a space portion on the shower plate side. A vapor phase growth apparatus according to claim 2 or 3, wherein a plurality of through holes are provided in the shower plate in one of the low heat conduction regions, and communicate with the growth chamber through the space portion. A vapor phase growth apparatus according to claim 1, wherein a cooling portion is provided in a region of the shower head adjacent to the plurality of gas ejection holes. A shower plate is mounted in a gas supply unit in a growth chamber, and includes a bore portion on an upstream side surface of a gas flowing into the shower plate and on an outer peripheral portion of the shower plate. A vapor phase growth method using a vapor phase growth apparatus comprising: a substrate holding member on which a substrate to be processed is placed in a growth chamber; a substrate heater for heating the substrate to be processed; and a plurality of gas ejections a showerhead of the hole; and a shower plate disposed on the shower head and provided with a plurality of plate holes; from the shower head, the gas ejection hole of the shower head and the plate hole of the shower plate And supplying a gas to the substrate to be processed to form a film on the substrate to be processed; the vapor phase growth method is characterized by being further outside the region heated by the substrate heater of the substrate holding member, and The opposite surface of the substrate holding member is formed with a low heat transfer region on the surface on which the shower plate is placed on the shower head, and a gas is supplied through the gas discharge hole and the plate hole to form a film.