CN112837985B - Upper electrode assembly and plasma processing apparatus - Google Patents
Upper electrode assembly and plasma processing apparatus Download PDFInfo
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- CN112837985B CN112837985B CN201911156125.2A CN201911156125A CN112837985B CN 112837985 B CN112837985 B CN 112837985B CN 201911156125 A CN201911156125 A CN 201911156125A CN 112837985 B CN112837985 B CN 112837985B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The embodiment of the application discloses an upper electrode assembly.A first heat conduction structure is arranged between a mounting substrate and a gas spray header so as to improve the heat conduction effect between the mounting substrate and the gas spray header; moreover, because the gas shower head includes the main part and is located the bulge on the main part, the main part has a plurality of first ventholes, the bulge has a plurality of second ventholes, first venthole and second venthole one-to-one, first venthole and second venthole are linked together and constitute the venthole, the second venthole runs through the first through-hole of first heat conduction structure, and extend to in the first air vent of first mounting substrate, thereby when the process gas that lets in first air vent through first heat conduction structure, tiny particle on the first heat conduction structure need follow the venthole after bulge's lateral wall and top can be taken to the pending substrate, consequently, electrode assembly is favorable to reducing on this application tiny particle produces the pollution to the pending substrate.
Description
Technical Field
The present application relates to the field of plasma processing technologies, and in particular, to an upper electrode assembly and a plasma processing apparatus.
Background
With the continuous development of Plasma processing technology, plasma processing apparatuses applying the technology are continuously improved, and several Plasma processing apparatuses, such as a Capacitive Coupled Plasma (CCP) processing apparatus, an Inductively Coupled Plasma (ICP) processing apparatus, and an Electron Cyclotron Resonance Plasma (ECR) processing apparatus, have been developed. The heat conduction efficiency of the mounting substrate and the gas shower head is low in the process of processing a substrate to be processed by using the capacitive coupling plasma processing equipment.
Disclosure of Invention
In order to solve the above technical problem, an embodiment of the present application provides an upper electrode assembly to improve heat conduction efficiency between a mounting substrate and a gas shower head.
In order to solve the above problem, the embodiment of the present application provides the following technical solutions:
an upper electrode assembly comprising:
a mounting substrate including a first mounting substrate having a plurality of first vent holes;
the first heat conduction structure is positioned on one side of the first mounting substrate and provided with a plurality of first through holes, the first through holes correspond to the first vent holes one by one, and the first through holes are communicated with the first vent holes;
the gas spray head is positioned on one side, away from the mounting substrate, of the first heat conduction structure, and is provided with a plurality of gas outlet holes, and the gas outlet holes are in one-to-one correspondence with the first vent holes and communicated with the corresponding first vent holes;
the gas spray header comprises a main body part and a protruding part located on the main body part, the protruding part extends into the first vent hole, the main body part is provided with a plurality of first air outlet holes, the protruding part is provided with a plurality of second air outlet holes, the first air outlet holes are in one-to-one correspondence with the second air outlet holes, and the first air outlet holes are communicated with the second air outlet holes to form the air outlet holes.
Optionally, an orthographic projection of the first vent hole of the first mounting substrate in a preset plane is located in an orthographic projection of the first through hole in the preset plane, wherein the preset plane is parallel to a surface of the gas shower head opposite to the first mounting substrate.
Optionally, the first heat conducting structure includes a first heat conducting fin and a heat conducting coating layer on a surface of the first heat conducting fin.
Optionally, the first heat conducting fin is an aluminum alloy heat conducting fin, and the heat conducting coating is a graphite coating.
Optionally, the larger value of the thermal expansion coefficient of the first mounting substrate material and the thermal expansion coefficient of the gas shower head material is a, the smaller value of the thermal expansion coefficient of the first mounting substrate material and the thermal expansion coefficient of the gas shower head material is B, and the ratio of a to B is not greater than 2.
Optionally, the mounting substrate further includes a second mounting substrate, the second mounting substrate is located on a side of the first mounting substrate away from the gas shower head, the second mounting substrate has at least one second vent hole therein, and the second vent hole is communicated with the first vent hole.
Optionally, the gas shower head further comprises a second heat conduction structure, the second heat conduction structure is located between the second mounting substrate and the first mounting substrate, the second heat conduction structure comprises a second through hole, all the first through holes are located in the orthographic projection of the preset plane, and the second through holes are located in the orthographic projection of the preset plane, wherein the preset plane is parallel to the surface of the gas shower head opposite to the first mounting substrate.
Optionally, the gas shower head is made of monocrystalline silicon, aluminum alloy or silicon carbide, and the first mounting substrate is made of monocrystalline silicon, aluminum alloy or silicon carbide.
Optionally, when the gas shower head is an aluminum alloy gas shower head or a monocrystalline silicon gas shower head, a coating is disposed on one side of the gas shower head, which is away from the first mounting substrate, and the coating is made of yttrium oxide or yttrium fluoride.
Optionally, the upper electrode assembly further includes:
the cooling water channel is arranged in the mounting substrate and used for cooling the mounting substrate;
and the temperature detector penetrates through the mounting substrate and is in contact with the gas spray header.
Accordingly, the present application also provides a plasma processing apparatus comprising:
a reaction cavity is arranged in the reaction chamber,
an upper electrode assembly positioned in the reaction chamber, wherein the upper electrode assembly is any one of the upper electrode assemblies;
and the base is positioned in the reaction cavity, is used for bearing a substrate to be processed, and is arranged opposite to the gas spray header in the upper electrode assembly.
Compared with the prior art, the technical scheme has the following advantages:
the upper electrode assembly that this application embodiment provided, mounting substrate with be provided with first heat conduction structure between the gas shower head, in order to improve mounting substrate with heat conduction effect between the gas shower head.
Moreover, the gas shower head comprises a main body part and a convex part positioned on the main body part, the main body part is provided with a plurality of first gas outlets, the convex part is provided with a plurality of second gas outlets, the first gas outlets and the second gas outlets are in one-to-one correspondence, the first gas outlets and the second gas outlets are communicated to form the gas outlets, and the second gas outlets penetrate through the first through hole of the first heat conduction structure and extend into the first vent hole of the first mounting substrate, so that when process gas introduced into the first vent hole passes through the first heat conduction structure, micro particles on the first heat conduction structure can be brought onto a substrate to be processed along the gas outlets after the side wall and the top of the convex part, and therefore, the movement distance of the micro particles on the first heat conduction structure is far, and therefore, the pollution of the micro particles on the substrate to be processed is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an upper electrode assembly according to an embodiment of the present disclosure;
fig. 2 is a schematic view of a partial structure of a first mounting substrate and a gas shower head provided in an embodiment of the present application;
fig. 3 is a schematic view of a partial structure of a gas shower head according to an embodiment of the present disclosure;
fig. 4 is a schematic view of a three-dimensional structure of a gas shower head according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of another upper electrode assembly according to an exemplary embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of another plasma processing apparatus according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited to the specific embodiments disclosed below.
As described in the background section, the thermal conduction between the mounting substrate and the gas shower head is inefficient in the process of processing a substrate to be processed using the capacitively-coupled plasma processing apparatus.
In view of the above, embodiments of the present application provide an upper electrode assembly of a plasma processing apparatus. As shown in fig. 1, fig. 2, fig. 3 and fig. 4, wherein fig. 1 is a schematic cross-sectional view of an upper electrode assembly provided in an embodiment of the present application, fig. 2 is a schematic view of a partial structure of a first mounting substrate and a gas showerhead, fig. 3 is a schematic view of a partial structure of a gas showerhead provided in an embodiment of the present application, and fig. 4 is a schematic view of a three-dimensional structure of a gas showerhead provided in an embodiment of the present application, the upper electrode assembly provided in an embodiment of the present application includes:
a mounting substrate 100, the mounting substrate 100 including a first mounting substrate 101, the first mounting substrate 101 having a plurality of first air vents 1011;
a first heat conducting structure 200, wherein the first heat conducting structure 200 is located on one side of the first mounting substrate 101, the first heat conducting structure 200 has a plurality of first through holes, the first through holes correspond to the first air vents 1011 one by one, and the first through holes are communicated with the first air vents 1011;
the gas shower head 300 is located on a side of the first heat conducting structure 200 away from the mounting substrate 100, the gas shower head 300 has a plurality of gas outlets 3001, and the gas outlets 3001 correspond to the first air vents 1011 one by one and are communicated with the corresponding first air vents 1011;
the gas shower head 300 comprises a main body part 301 and a convex part 302 located on the main body part 301, wherein the convex part 302 extends into a first vent 1011, the main body part 301 is provided with a plurality of first air outlets, the convex part 302 is provided with a plurality of second air outlets, the first air outlets and the second air outlets are in one-to-one correspondence, and the first air outlets and the second air outlets are communicated to form the air outlets 3001.
It should be noted that, in the embodiment of the present application, the second air outlet hole extends into the first air vent 1011.
In one embodiment of the present application, the first mounting substrate 101 and the gas shower head 300 are fixed together by screws. However, the present application is not limited to this, and the details may be determined as appropriate.
It should be noted that, since the contact surfaces of the first mounting substrate 101 and the gas shower head 300 have a certain roughness, and the mounting substrate 100 and the gas shower head 300 are fixed together by screws, the contact surfaces of the two are difficult to completely adhere to each other, which results in a large thermal resistance between the two, a reduced thermal conduction rate between the two, an increased temperature difference between the two, and a low thermal conduction efficiency between the mounting substrate 100 and the gas shower head 300. Further, since it is difficult to completely attach the contact surface of the first mounting substrate 101 to the contact surface of the gas shower head 300, the temperature transmitted to the gas shower head 300 is not uniform, and the temperature of the gas shower head 300 is not uniform.
Therefore, in the upper electrode assembly provided in the embodiment of the present application, the first heat conducting structure 200 is disposed between the mounting substrate 100 and the gas shower head 300, so as to improve the heat conduction effect between the mounting substrate 100 and the gas shower head 300, and solve the problem of low heat conduction efficiency between the mounting substrate 100 and the gas shower head 300.
Since the thermal expansion coefficients of the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300 are different, the expansion amounts of the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300 are different, and friction is generated between the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300, so that fine particles are easily ground out from the first heat conducting structure 200 in the friction process between the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300. In the etching process, when the process gas enters the gas outlet of the gas shower head 300 through the first vent 1011 in the first mounting substrate 101 and the first through hole in the first heat conducting structure 200, the micro particles on the first heat conducting structure 200 are carried to the substrate to be processed along the gas outlet of the gas shower head 300, and the substrate to be processed is polluted.
In the upper electrode assembly provided in the embodiment of the present application, the gas shower head includes a main body 301 and a convex portion 302 located on the main body, the main body 301 has a plurality of first gas outlets, the convex portion 302 has a plurality of second gas outlets, the first gas outlets correspond to the second gas outlets one to one, the first gas outlets and the second gas outlets are communicated to form the gas outlets 3001, the second gas outlets penetrate through the first through hole of the first heat conducting structure 200 and extend into the first air holes 1011 of the first mounting substrate 101, so that the process gas introduced into the first air holes 1011 passes through the first heat conducting structure 200, and in the process of spraying from the gas shower head 300, the fine particles on the first heat conducting structure are required to be carried along the side walls and the top of the convex portion to the substrate to be processed, and therefore, the distance of the fine particles on the first heat conducting structure moves is reduced, and thus, the process gas on the substrate to be processed is generated by the substrate to be processed along the gas outlets 300.
Based on the above embodiments, in an embodiment of the present application, as shown in fig. 1, the upper electrode assembly further includes: and the heater 400 is arranged on one side of the mounting substrate 100, which is far away from the gas spray header 300, and is used for heating the mounting substrate 100.
On the basis of any of the above embodiments, in an embodiment of the present application, the upper electrode assembly further includes a gas baffle 500, the gas baffle 500 is located on a side of the mounting substrate 100 facing away from the gas shower head 300, the gas baffle 500 has at least one gas inlet hole (not shown) therein, and the first gas vent 1011 is communicated with the gas inlet hole.
On the basis of the above-described embodiments, in one embodiment of the present application, a sealing member 600 is disposed between the gas barrier 500 and the mounting substrate 100 to seal a gap between the gas barrier 500 and the mounting substrate 100.
On the basis of the above embodiments, in an embodiment of the present application, an orthographic projection of the first vent hole 1011 of the first mounting substrate 101 in a predetermined plane is located in an orthographic projection of the first vent hole in the predetermined plane, wherein the predetermined plane is parallel to a surface of the gas shower head 300 opposite to the first mounting substrate 101, so that the first heat conducting structure 200 is completely covered by the first mounting substrate 101, thereby not only preventing the first vent hole from affecting an amount of the process gas entering the gas outlet 3001 from the first vent hole 1011, but also preventing the process gas from contacting the first heat conducting structure 200 when entering the gas outlet of the gas shower head 300 through the first vent hole 1011 of the first mounting substrate 101 and the first vent hole of the first heat conducting structure 200, further reducing a possibility that the process gas brings fine particles located on the first heat conducting structure 200 onto the substrate to be processed along the gas outlet of the gas shower head 300, thereby contaminating the substrate to be processed.
On the basis of any of the above embodiments, in an embodiment of the present application, the thermal conductivity of the first thermal conductive structure 200 is greater than or equal to 1.5W/(m "K), and the thickness of the first thermal conductive structure 200 is 0.05mm to 0.5mm, inclusive, and specifically, the thickness of the first thermal conductive structure 200 is 0.15mm to 0.35mm, inclusive, so as to further increase the thermal conduction rate at which the first thermal conductive structure 200 transfers heat from the first thermal conductive structure 200 to the gas shower head 300, and increase the thermal conduction efficiency between the first mounting substrate 101 and the gas shower head 300, thereby increasing the thermal conduction rate in the plasma processing apparatus.
On the basis of the above embodiments, in an embodiment of the present application, the first heat conducting structure 200 is a flexible heat conducting member, and fills a gap between the first mounting substrate 101 and the gas shower head 300, so as to utilize the first heat conducting structure 200 to reduce a thermal resistance between the first mounting substrate 101 and the gas shower head 300, and improve a heat conduction efficiency between the first mounting substrate 101 and the gas shower head 300, and simultaneously utilize the first heat conducting structure 200 to fill the gap between the first mounting substrate 101 and the gas shower head 300, so that a heat conduction between the first mounting substrate 101 and the gas shower head 300 is more uniform, and further, a temperature of the gas shower head 300 is more uniform.
On the basis of the above embodiments, in an embodiment of the present application, the first heat conducting structure 200 includes a first heat conducting sheet and a heat conducting coating layer located on a surface of the first heat conducting sheet, the heat conducting coating layer fills a gap between the first mounting substrate 101 and the gas shower head 300, so that the first heat conducting sheet is utilized to reduce thermal resistance between the first mounting substrate 101 and the gas shower head 300, thermal conduction efficiency between the first mounting substrate 101 and the gas shower head 300 is improved, and meanwhile, the heat conducting coating layer is utilized to fill a gap between the first mounting substrate 101 and the gas shower head 300, so that thermal conduction between the first mounting substrate 101 and the gas shower head 300 is more uniform, and further, the temperature of the gas shower head 300 is more uniform. Specifically, the thickness of the first heat-conducting fin is 0.1mm to 0.3mm, inclusive, so as not to increase the thickness of the upper electrode assembly excessively on the basis of improving the heat-conducting effect between the first mounting substrate 101 and the gas shower head 300. It should be noted that a heat-conducting coating is disposed on a surface of the first heat-conducting strip opposite to the gas shower head 300, and a heat-conducting coating is also disposed on a surface of the first heat-conducting strip opposite to the first mounting substrate 101.
In other embodiments of the present application, the first heat conducting structure 200 may also be a heat conducting pad, specifically, in one embodiment of the present application, the heat conducting pad is a heat conducting silica gel, in another embodiment of the present application, the heat conducting pad is an adhesive containing a powder material with a high heat conductivity, and optionally, the heat conducting pad is an adhesive containing boron nitride or aluminum nitride, which is not limited in this application, as the case may be.
The first heat conducting structure 200 includes a first heat conducting sheet and a heat conducting coating layer on a surface of the first heat conducting sheet.
Specifically, in an embodiment of the present application, the first heat conducting strip is an aluminum alloy heat conducting strip, the heat conducting coating is a graphite coating, and optionally, the first heat conducting strip is an aluminum foil heat conducting strip, specifically, the first heat conducting structure 200 is an aluminum foil with a graphite coating coated on a surface thereof, so that the first heat conducting structure 200 has both good heat conductivity and good electrical conductivity, and further, the grounding effect of the first mounting substrate 101 and the gas shower head 300 in the upper electrode assembly can be improved.
It should be noted that, in the working process of the plasma processing apparatus, the first mounting substrate 101 and the gas shower head 300 may be heated by the process requirement, so that the temperature of these components reaches 120 ℃, or even higher, whereas the first mounting substrate 101 of the existing capacitive coupling plasma processing apparatus uses an aluminum alloy material, the thermal expansion coefficient of which is 2.34e-5/K, and the gas shower head 300 mounted together with the first mounting substrate 101 uses a single crystal silicon material, the thermal expansion coefficient of which is 2.4e-6/K, i.e. the difference between the thermal expansion coefficients of the two is large, so that in the heating process, the thermal expansion amount of the first mounting substrate 101 is large, and the thermal expansion amount of the gas shower head is small, and in the thermal expansion process of the first mounting substrate 101, the convex portion of the gas shower head 300 mounted together therewith may be squeezed apart, resulting in damage to the gas shower head 300.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 1, a larger value of the thermal expansion coefficient of the material of the first mounting substrate 101 and the thermal expansion coefficient of the material of the gas shower head 300 is defined as a, a smaller value of the thermal expansion coefficient of the material of the first mounting substrate 101 and the thermal expansion coefficient of the material of the gas shower head 300 is defined as B, and a ratio of a to B is not greater than 2, so that when the heater 400 heats the mounting substrate 100, a difference between a thermal expansion amount of the first mounting substrate 101 and a thermal expansion amount of the gas shower head 300 is not large, and a large expansion difference between the thermal expansion coefficient of the gas shower head 300 and the thermal expansion coefficient of the first mounting substrate 100 is reduced, thereby reducing a probability that the convex portion of the gas shower head 300 is damaged.
On the basis of the above-mentioned embodiments, in one embodiment of the present application, the thermal expansion coefficient of the gas shower head 300 is the same as that of the first mounting substrate 101, so as to minimize the probability of damage to the gas shower head 300 due to the difference in thermal expansion between the first mounting substrate 101 and the gas shower head 300, and to increase the thermal conduction rate between the first mounting substrate 101 and the gas shower head 300, thereby increasing the thermal conduction rate in the plasma processing apparatus. However, the present application is not limited thereto, and in other embodiments of the present application, the thermal expansion coefficient of the gas shower head 300 may be different from that of the first mounting substrate 101, as the case may be.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 1, the mounting substrate 100 further includes a second mounting substrate 102, and the second mounting substrate 102 is located on a side of the first mounting substrate 101 away from the gas shower head 300, wherein the second mounting substrate 102 has at least one second vent hole therein, and the second vent hole is communicated with the first vent hole 1011 to form a vent hole of the mounting substrate 100, specifically, in an embodiment of the present application, the heater 400 is located on a side of the second mounting substrate 102 away from the first mounting substrate 101, which is not limited in this application, and is determined as the case may be.
In addition to the above embodiments, in one embodiment of the present application, the second mounting substrate 102 is an aluminum alloy mounting substrate, and in another embodiment of the present application, the second mounting substrate 102 is a stainless steel mounting substrate.
Since the thermal expansion coefficient of the first mounting substrate 101 is between the thermal expansion coefficient of the second mounting substrate 102 and the thermal expansion coefficient of the gas shower head 300, when the second mounting substrate 102 is heated by the heater 400, the thermal expansion difference between the second mounting substrate 102 and the first mounting substrate 101 can be made small, and the probability of damage to the first mounting substrate 101 due to the large thermal expansion difference between the first mounting substrate 101 and the second mounting substrate 102 can be reduced, and similarly, the thermal expansion difference between the first mounting substrate 101 and the gas shower head 300 is made small, so that the probability of damage to the gas shower head 300 due to the large thermal expansion difference between the first mounting substrate 101 and the gas shower head 300 can be reduced, and the probability of damage to the plasma processing apparatus can be reduced.
In other embodiments of the present application, if the thermal expansion coefficient of the gas shower head 300 is different from that of the first mounting substrate 101, the thermal expansion coefficient of the first mounting substrate 101 may also be smaller than that of the gas shower head 300, which is not limited herein, as long as the ratio of the larger value of the thermal expansion coefficient of the material of the first mounting substrate 101 and the thermal expansion coefficient of the material of the gas shower head 300 to the smaller value of the thermal expansion coefficient of the material of the first mounting substrate 101 and the thermal expansion coefficient of the material of the gas shower head 300 is not greater than 2, so as to reduce the probability of damage to the gas shower head 300.
In an embodiment of the present application, the second mounting substrate 102 and the first mounting substrate 101 are fixed together by screws, and in other embodiments of the present application, the second mounting substrate 102 and the first mounting substrate 101 may also be fixed together by other means, which is not limited in this application, as the case may be.
It should be noted that the contact surfaces of the first mounting substrate 101 and the second mounting substrate 102 have a certain roughness, and the first mounting substrate 101 and the second mounting substrate 102 are fixed together by screws, so that the contact surfaces between the first mounting substrate 101 and the second mounting substrate 102 are difficult to completely adhere to each other, which causes a large thermal resistance between the two, affects the thermal conduction speed between the two, and increases the temperature difference between the two.
In view of this, continuing to be illustrated in fig. 1, on the basis of any of the above embodiments, in an embodiment of the present application, a second heat conducting structure 700 is further included, and the second heat conducting structure 700 is located between the first mounting substrate 101 and the second mounting substrate 102 to improve the heat conduction efficiency between the first mounting substrate 101 and the second mounting substrate 102 and reduce the temperature difference between the first mounting substrate 101 and the second mounting substrate 102.
It should be noted that, in the embodiment of the present application, the second heat conducting structure 700 includes a second through hole, and an orthographic projection of all the first vent holes 1011 on a predetermined plane is located in the orthographic projection of the second through holes 1011 on the predetermined plane, so as to ensure that the arrangement of the second heat conducting structure 700 does not affect the gas flow in the first vent holes 1011, wherein the predetermined plane is parallel to the surface of the gas shower head 300 opposite to the first mounting substrate 101.
In an embodiment of the present application, the thermal conductivity of the second thermal conductive structure 700 is greater than or equal to 0.5W/(m "K), and specifically, the thermal conductivity of the second thermal conductive structure 700 is greater than or equal to 1.5W/(m" K), so as to further increase the thermal conduction rate of the second thermal conductive structure 700 for transferring heat from the second thermal conductive structure 700 to the first mounting substrate 101, and increase the thermal conduction efficiency of the first mounting substrate 101 and the second mounting substrate 102, and thus increase the thermal conduction efficiency in the plasma processing apparatus, and in an embodiment of the present application, the thickness of the second thermal conductive structure 700 is 0.05mm to 1mm, inclusive, and specifically, the thickness of the second thermal conductive structure 700 is 0.15mm to 0.35mm, inclusive, so as not to increase the thickness of the upper electrode assembly excessively, based on the effect of improving the thermal conduction between the first mounting substrate and the second mounting substrate.
On the basis of the above embodiments, in an embodiment of the present application, the second thermal conductive structure 700 is a flexible thermal conductive member, fills a gap between the second mounting substrate 102 and the first mounting substrate 101, reduces a thermal resistance between the first mounting substrate 101 and the second mounting substrate 102, and improves a thermal conduction efficiency between the first mounting substrate 101 and the second mounting substrate 102, and meanwhile, because the thermal conductive coating fills the gap between the first mounting substrate 101 and the second mounting substrate 102, the thermal conduction between the first mounting substrate 101 and the second mounting substrate 102 is more uniform, so that the temperature of the first mounting substrate 101 is more uniform.
On the basis of the above embodiments, in an embodiment of the present application, the second heat conducting structure 700 includes a second heat conducting sheet and a heat conducting coating located on a surface of the second heat conducting sheet, the heat conducting coating fills a gap between the second mounting substrate 102 and the first mounting substrate 101, so as to reduce a thermal resistance between the first mounting substrate 101 and the second mounting substrate 102, and improve a heat conduction efficiency between the first mounting substrate 101 and the second mounting substrate 102, and meanwhile, since the heat conducting coating fills a gap between the first mounting substrate 101 and the second mounting substrate 102, the heat conduction between the first mounting substrate 101 and the second mounting substrate 102 is more uniform, and further, the temperature of the first mounting substrate 101 is more uniform. Optionally, the thickness of the second heat conduction sheet is 0.1mm to 0.3mm, inclusive, so as not to increase the thickness of the upper electrode assembly too much on the basis of improving the heat conduction effect between the first mounting substrate 101 and the second mounting substrate 102. A heat conductive coating is provided on a surface of the second heat conductive sheet facing the second mounting substrate 102, and a heat conductive coating is also provided on a surface of the second heat conductive sheet facing the first mounting substrate 101.
In other embodiments of the present application, the second thermal conductive structure 700 may also be a thermal conductive pad, specifically, in one embodiment of the present application, the thermal conductive pad is a thermal conductive silicone, in another embodiment of the present application, the thermal conductive pad is an adhesive containing a powder material with a high thermal conductivity, and optionally, the thermal conductive pad is an adhesive containing boron nitride or aluminum nitride, which is not limited in this application, as the case may be.
The second heat conducting structure 700 includes a second heat conducting sheet and a heat conducting coating layer on the surface of the second heat conducting sheet.
Specifically, in an embodiment of the present application, the second heat conducting strip is an aluminum alloy heat conducting strip, the heat conducting coating is a graphite coating, and optionally, the second heat conducting strip is an aluminum foil heat conducting strip, specifically, the second heat conducting structure is an aluminum foil coated with a graphite coating on a surface thereof, so that the second heat conducting structure has both good heat conductivity and good electrical conductivity, and thus, a grounding effect between the first mounting substrate and the second mounting substrate in the plasma processing apparatus can be improved.
On the basis of any of the above embodiments, in an embodiment of the present application, the second heat conduction structure and the first heat conduction structure may be the same heat conduction structure, and in other embodiments of the present application, the second heat conduction structure and the first heat conduction structure may be different heat conduction structures.
In addition to any of the above embodiments, in an embodiment of the present application, the material of the gas shower head 300 may be single crystal silicon, aluminum alloy, silicon carbide, yttrium oxide, silicon dioxide, or silicon nitride, and the material of the first mounting substrate 101 may be single crystal silicon, aluminum alloy, silicon carbide, yttrium oxide, silicon dioxide, or silicon nitride.
Since the thermal expansion coefficients of silicon carbide and single crystal silicon are not greatly different from each other, the thermal expansion amount of the first mounting substrate 101 and the thermal expansion amount of the gas shower head 300 are not greatly different from each other, and the probability that the gas shower head 300 is damaged due to the large difference between the thermal expansion coefficient of the gas shower head 300 and the thermal expansion coefficient of the first mounting substrate 101 and the large difference between the thermal expansion coefficients is reduced.
Moreover, since the silicon carbide has corrosion resistance, when the material of the gas shower head 300 is silicon carbide and the material of the first mounting substrate 101 is single crystal silicon, the silicon carbide can be applied to a working environment in which rf power is high, so as to prevent plasma from corroding the gas shower head 300.
Therefore, in an alternative embodiment of the present application, the material of the gas shower head 300 is single crystal silicon, and the material of the first mounting substrate 101 is silicon carbide; in another alternative embodiment of the present application, the material of the gas shower head 300 is silicon carbide, and the material of the first mounting substrate 101 is single crystal silicon.
In another embodiment of the present application, the thermal expansion coefficient of the first mounting substrate 101 may be the same as that of the second mounting substrate 102, and preferably, the first mounting substrate 101 and the second mounting substrate 102 are integrally formed as shown in fig. 5, thereby simplifying the manufacturing process of the mounting substrate 100.
It should be noted that, in the embodiment of the present application, if the thermal expansion coefficients of the first mounting substrate 101 and the second mounting substrate 102 are the same, and the thermal expansion coefficients of the first mounting substrate 101 and the gas shower head 300 are the same, in one embodiment of the present application, the mounting substrate 100 is an aluminum alloy mounting substrate, and the gas shower head 300 is an aluminum alloy gas shower head, so as to ensure the heat conduction efficiency of the mounting substrate 100.
It should be further noted that, when the plasma processing apparatus works, if the gas shower head 300 is an aluminum alloy gas shower head or a monocrystalline silicon gas shower head, the plasma is liable to corrode one side (i.e. the side close to the reaction chamber) of the gas shower head away from the first mounting substrate 101, therefore, on the basis of any of the above embodiments of the present application, in the embodiment of the present application, when the gas shower head 300 is an aluminum alloy gas shower head or a monocrystalline silicon gas shower head, the side of the gas shower head 300 away from the first mounting substrate 101 is provided with a coating, and the coating is made of yttrium oxide or yttrium fluoride to prevent the plasma from corroding the gas shower head 300.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 1 and 5, the upper electrode assembly further includes:
a cooling water channel 800, the cooling water channel 800 being disposed in the mounting substrate 100 and configured to cool the mounting substrate 100, and in particular, the cooling water channel 800 being disposed in the second mounting substrate 102 and configured to cool the second mounting substrate 102;
and a temperature detector 900, wherein the temperature detector 900 penetrates the mounting substrate 100 and contacts the gas shower head 300.
Specifically, the upper electrode assembly further includes a gas baffle 500, and the temperature detector 900 penetrates through the mounting substrate 100 and contacts the gas shower head 300, and includes: the temperature detector 900 penetrates the gas barrier 500 and the mounting substrate 100, and is in contact with the gas shower head 300, and in the embodiment of the present application, a seal ring and a flange 1000 are further provided between the temperature detector 900 and the gas barrier 500, so as to prevent a gap from being formed between the gas barrier 500 and the temperature detector 900.
It should be further noted that, the temperature of the internal structure of the plasma processing apparatus is balanced by the heater 400 and the cooling water channel 800, specifically, during the operation of the plasma processing apparatus, the heater 400 and the cooling water channel 800 are both opened, and the water in the cooling water channel 800 is kept constantly open, the heater 400 heats the second mounting substrate 102, the second mounting substrate 102 transfers heat to the first mounting substrate 101, the first mounting substrate 101 transfers heat to the gas shower head 300, so that the temperature of the process gas in the plasma processing apparatus reaches the preset temperature, when the temperature in the upper electrode assembly detected by the temperature detector 900 is higher than the preset temperature, the heater 400 is turned off, and when the temperature in the plasma processing apparatus detected by the temperature detector 900 is lower than the preset temperature, the heater 400 is turned on, so that the temperature in the plasma processing apparatus is always kept at a constant temperature, and the gas shower head 300 is kept at a constant temperature, for example, the gas shower head 300 is kept at 120 ℃ or 150 ℃.
Accordingly, as shown in fig. 6, the present application also provides a plasma processing apparatus comprising:
a reaction chamber 1100;
an upper electrode assembly disposed in the reaction chamber 1100, wherein the upper electrode assembly is any one of the upper electrode assemblies provided in the above embodiments;
a susceptor 1101 positioned within the reaction chamber 1100, the susceptor 1101 configured to carry a substrate to be processed, and the susceptor 1101 positioned opposite the gas showerhead 300 of the upper electrode assembly.
It should be noted that the substrate to be processed is a wafer, which is not limited in this application, as the case may be.
In one embodiment of the present application, the first mounting substrate 101 and the showerhead 300 are fixed together by screws. However, the present application is not limited to this, and the details may be determined as appropriate.
It should be noted that, since the contact surfaces of the first mounting substrate 101 and the gas shower head 300 have a certain roughness, and the mounting substrate 100 and the gas shower head 300 are fixed together by screws, the contact surfaces of the two are difficult to completely adhere to each other, which results in a large thermal resistance between the two, a reduced thermal conduction rate between the two, an increased temperature difference between the two, and a low thermal conduction efficiency between the mounting substrate 100 and the gas shower head 300. Further, since it is difficult to completely adhere the contact surface of the first mounting substrate 101 to the contact surface of the gas shower head 300, the temperature transmitted to the gas shower head 300 is not uniform, and the temperature of the gas shower head 300 is not uniform.
Therefore, in the upper electrode assembly of the plasma processing apparatus provided in the embodiment of the present application, the first heat conducting structure 200 is disposed between the mounting substrate 100 and the gas shower head 300, so as to improve the heat conduction effect between the mounting substrate 100 and the gas shower head 300, and solve the problem of low heat conduction efficiency between the mounting substrate 100 and the gas shower head 300.
Since the thermal expansion coefficients of the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300 are different, the expansion amounts of the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300 are different, and friction is generated between the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300, so that fine particles are easily ground out from the first heat conducting structure 200 in the friction process between the first heat conducting structure 200 and the first mounting substrate 101 and the gas shower head 300. In the etching process, when the process gas enters the gas outlet of the gas shower head 300 through the first vent 1011 in the first mounting substrate 101 and the first through hole in the first heat conducting structure 200, the micro particles on the first heat conducting structure 200 are carried to the substrate to be processed along the gas outlet of the gas shower head 300, and the substrate to be processed is polluted.
In the upper electrode assembly of the plasma processing apparatus provided in the embodiment of the present application, the gas shower head 300 includes a main body 301 and a protruding portion 302 located on the main body 301, the main body 301 has a plurality of first gas outlets, the protruding portion 302 has a plurality of second gas outlets, the first gas outlets and the second gas outlets correspond to each other one by one, the first gas outlets and the second gas outlets are communicated to form the gas outlets 3001, the second gas outlets penetrate through the first through holes of the first heat conducting structure 200 and extend into the first vent holes of the first mounting substrate 101, so that the process gas introduced into the first vent holes 1011 passes through the first heat conducting structure 200, and in the process of spraying the gas shower head 300, the micro particles on the first heat conducting structure 200 need to be carried onto the substrate to be processed along the gas outlets 3001 after the side wall and the top of the protruding portion 302, and thus, the distance of the micro particles on the first heat conducting structure 200 to be moved is far away, which is favorable for reducing the pollution of the process gas on the substrate to be processed along the gas shower head 300.
All parts in the specification are described in a parallel and progressive mode, each part is mainly described to be different from other parts, and the same and similar parts among all parts can be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. An upper electrode assembly, comprising:
a mounting substrate including a first mounting substrate having a plurality of first vent holes;
the first heat conduction structure is positioned on one side of the first mounting substrate and provided with a plurality of first through holes, the first through holes correspond to the first vent holes one by one, and the first through holes are communicated with the first vent holes;
the gas spray head is positioned on one side, away from the mounting substrate, of the first heat conduction structure, and is provided with a plurality of gas outlet holes, and the gas outlet holes are in one-to-one correspondence with the first vent holes and communicated with the corresponding first vent holes;
the gas spray head comprises a main body part and a convex part positioned on the main body part, the convex part extends into a first vent hole, the main body part is provided with a plurality of first air outlet holes, the convex part is provided with a plurality of second air outlet holes, the first air outlet holes correspond to the second air outlet holes in a one-to-one mode, and the first air outlet holes are communicated with the second air outlet holes to form the air outlet holes.
2. The upper electrode assembly of claim 1, wherein an orthographic projection of the first vent hole of the first mounting substrate in a predetermined plane is located within an orthographic projection of the first through hole in the predetermined plane, wherein the predetermined plane is parallel to a surface of the showerhead opposite the first mounting substrate.
3. The upper electrode assembly of claim 1 or 2, wherein the first thermally conductive structure comprises a first thermally conductive sheet and a thermally conductive coating on a surface of the first thermally conductive sheet.
4. The upper electrode assembly of claim 3, wherein the first thermally conductive sheet is an aluminum alloy thermally conductive sheet and the thermally conductive coating is a graphite coating.
5. The upper electrode assembly of claim 1 wherein the greater of the coefficient of thermal expansion of the first mounting substrate material and the coefficient of thermal expansion of the showerhead material is a and the lesser of the coefficient of thermal expansion of the first mounting substrate material and the coefficient of thermal expansion of the showerhead material is B, the ratio of a to B being no greater than 2.
6. The upper electrode assembly of claim 5, wherein the mounting substrate further comprises a second mounting substrate positioned on a side of the first mounting substrate facing away from the showerhead, the second mounting substrate having at least one second vent therein, the second vent in communication with the first vent.
7. The upper electrode assembly of claim 6, further comprising a second heat conducting structure between the second mounting substrate and the first mounting substrate, the second heat conducting structure including a second through hole, an orthographic projection of all the first vent holes in a predetermined plane being within an orthographic projection of the second through hole in the predetermined plane, wherein the predetermined plane is parallel to a surface of the gas showerhead opposite the first mounting substrate.
8. The upper electrode assembly of claim 5, wherein the material of the gas showerhead is single crystal silicon, aluminum alloy, or silicon carbide, and the material of the first mounting substrate is single crystal silicon, aluminum alloy, or silicon carbide.
9. The upper electrode assembly of claim 8, wherein when the gas showerhead is an aluminum alloy gas showerhead or a single crystal silicon gas showerhead, a side of the gas showerhead facing away from the first mounting substrate is provided with a coating of a material of yttrium oxide or yttrium fluoride.
10. The upper electrode assembly of claim 1, further comprising:
the cooling water channel is arranged in the mounting substrate and used for cooling the mounting substrate;
and the temperature detector penetrates through the mounting substrate and is in contact with the gas spray header.
11. A plasma processing apparatus, comprising:
a reaction chamber;
an upper electrode assembly positioned within the reaction chamber, the upper electrode assembly being as recited in any one of claims 1-10;
and the base is positioned in the reaction cavity and used for bearing the substrate to be processed, and the base is arranged opposite to the gas spray header in the upper electrode assembly.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911156125.2A CN112837985B (en) | 2019-11-22 | 2019-11-22 | Upper electrode assembly and plasma processing apparatus |
| TW109134406A TWI754404B (en) | 2019-11-22 | 2020-10-05 | Upper electrode element and plasma processing equipment |
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| CN201911156125.2A CN112837985B (en) | 2019-11-22 | 2019-11-22 | Upper electrode assembly and plasma processing apparatus |
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| CN115058702A (en) * | 2022-07-27 | 2022-09-16 | 拓荆科技(上海)有限公司 | Spray header and vacuum treatment equipment |
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| WO2005098922A1 (en) * | 2004-03-31 | 2005-10-20 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
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| WO2009085163A1 (en) * | 2007-12-19 | 2009-07-09 | Lam Research Corporation | A composite showerhead electrode assembly for a plasma processing apparatus |
| US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8147648B2 (en) * | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| WO2011018912A1 (en) * | 2009-08-10 | 2011-02-17 | 三菱電機株式会社 | Plasma cvd apparatus, plasma electrode, and method for manufacturing semiconductor film |
| US9502218B2 (en) * | 2014-01-31 | 2016-11-22 | Applied Materials, Inc. | RPS assisted RF plasma source for semiconductor processing |
| JP6442296B2 (en) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | Mounting table and plasma processing apparatus |
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| WO2005098922A1 (en) * | 2004-03-31 | 2005-10-20 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
| CN101715605A (en) * | 2007-06-13 | 2010-05-26 | 朗姆研究公司 | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
| CN101335192A (en) * | 2007-06-27 | 2008-12-31 | 东京毅力科创株式会社 | Substrate processing apparatus and shower head |
| WO2010109915A1 (en) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | Vapor deposition apparatus and vapor deposition method |
| CN103794459A (en) * | 2012-10-29 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Gas spray head used for plasma processing chamber and formation method of coating of gas spray head |
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| TW202121488A (en) | 2021-06-01 |
| CN112837985A (en) | 2021-05-25 |
| TWI754404B (en) | 2022-02-01 |
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