TWI823071B - Components, plasma reaction device and component processing method - Google Patents
Components, plasma reaction device and component processing method Download PDFInfo
- Publication number
- TWI823071B TWI823071B TW110110053A TW110110053A TWI823071B TW I823071 B TWI823071 B TW I823071B TW 110110053 A TW110110053 A TW 110110053A TW 110110053 A TW110110053 A TW 110110053A TW I823071 B TWI823071 B TW I823071B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- substrate
- component
- reaction device
- resistant coating
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 60
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000011248 coating agent Substances 0.000 claims abstract description 74
- 238000000576 coating method Methods 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 34
- 238000001020 plasma etching Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 9
- 238000006056 electrooxidation reaction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 238000003487 electrochemical reaction Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 115
- 239000007789 gas Substances 0.000 description 15
- 230000007704 transition Effects 0.000 description 9
- 230000008646 thermal stress Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
本發明涉及半導體的技術領域，尤其涉及一種零部件、等離子體反應裝置及零部件加工方法。其中，等離子體反應裝置包括反應腔，反應腔內為等離子體環境，零部件暴露於所述等離子體環境中；零部件包括襯底和塗覆在襯底表面的耐等離子體塗層，襯底表面設置有複數個寬度W1≤30nm、深度H1≤100nm的凹槽，相鄰的凹槽間形成凸起；耐等離子體塗層覆蓋於凹槽的側壁表面、底部表面和凸起的頂部表面。本發明提供的零部件，通過在襯底的表面塗覆耐等離子體塗層對襯底進行耐等離子體保護，且耐等離子體塗層不易出現開裂、裂紋擴展以及剝落的問題。The invention relates to the technical field of semiconductors, and in particular to a component, a plasma reaction device and a component processing method. Wherein, the plasma reaction device includes a reaction chamber, which is a plasma environment, and the components are exposed to the plasma environment; the components include a substrate and a plasma-resistant coating coated on the surface of the substrate, and the substrate The surface is provided with a plurality of grooves with a width W1≤30nm and a depth H1≤100nm, and protrusions are formed between adjacent grooves; the plasma-resistant coating covers the side wall surfaces, bottom surfaces and top surfaces of the protrusions of the grooves. The parts provided by the present invention protect the substrate from plasma by coating the surface of the substrate with a plasma-resistant coating, and the plasma-resistant coating is not prone to cracking, crack propagation, and peeling problems.
Description
本發明屬於半導體的技術領域，特別地，涉及一種零部件、等離子體反應裝置及零部件加工方法。 The invention belongs to the technical field of semiconductors, and in particular, relates to a component, a plasma reaction device and a component processing method.
在半導體元件的製造過程中，等離子體蝕刻是將晶圓加工形成設計圖案的關鍵製程。 In the manufacturing process of semiconductor components, plasma etching is a key process for processing wafers to form designed patterns.
在典型的等離子體蝕刻製程中，製程氣體(如CF4、O2等)在射頻(Radio Frequency，RF)激勵作用下形成等離子體。這些等離子體在經過上電極和下電極之間的電場(電容耦合或者電感耦合)作用後與晶圓表面發生物理轟擊作用及化學反應，從而蝕刻出具有特定結構的晶圓。 In a typical plasma etching process, process gases (such as CF 4 , O 2 , etc.) form plasma under radio frequency (Radio Frequency, RF) excitation. These plasmas undergo physical bombardment and chemical reactions with the wafer surface after passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, thereby etching the wafer with a specific structure.
對於處在反應腔內的零部件而言，其表面通常塗覆有一層耐等離子體塗層，以保護襯底不被等離子體腐蝕。但因為反應腔內部是一個不斷升溫-降溫的熱迴圈衝擊環境，處於反應腔內的襯底其表面塗覆的耐等離子體塗層在服役過程中的熱應力不斷累積，有可能產生微裂紋，甚至微裂紋擴展產生開裂、剝落等現象，進而使耐等離子體塗層的保護功能失效，被其包覆的襯底因裸露在反應腔內的等離子體環境中而發生嚴重的腐蝕損壞。 For components located in the reaction chamber, their surfaces are usually coated with a plasma-resistant coating to protect the substrate from plasma corrosion. However, because the inside of the reaction chamber is a thermal cycle impact environment that continuously heats up and cools down, the plasma-resistant coating on the surface of the substrate in the reaction chamber accumulates thermal stress during service, which may cause micro-cracks. , or even micro-cracks propagate to cause cracking, peeling and other phenomena, which in turn invalidates the protective function of the plasma-resistant coating, and the substrate covered by it suffers severe corrosion damage due to exposure to the plasma environment in the reaction chamber.
本發明的主要目的在於提供一種用於等離子體反應裝置中的零部件，其能夠有效減輕塗覆在襯底表面的耐等離子體塗層因熱應力累積引發的微裂紋產生、擴展、開裂以及剝落等現象。 The main purpose of the present invention is to provide a component used in a plasma reaction device, which can effectively reduce the generation, expansion, cracking and peeling of microcracks caused by the accumulation of thermal stress in the plasma-resistant coating coated on the surface of the substrate. and other phenomena.
本發明還提供了一種等離子體反應裝置，該等離子體反應裝置能夠延長零部件的服役壽命、降低其運營成本，維護反應腔內部環境的穩定性。 The invention also provides a plasma reaction device, which can extend the service life of components, reduce their operating costs, and maintain the stability of the internal environment of the reaction chamber.
本發明還提供了一種零部件的加工方法，用於加工形成上述零部件。 The invention also provides a processing method for parts, which is used to process and form the above-mentioned parts.
本發明的用於等離子體反應裝置中的零部件，所述等離子體反應裝置包括反應腔，所述反應腔內為等離子體環境，所述零部件暴露於所述等離子體環境中，所述零部件包括：襯底和塗覆在所述襯底表面的耐等離子體塗層，所述襯底的表面設置有複數個凹槽，相鄰所述凹槽間形成凸起；每個所述凹槽的寬度W1
可選地，每個所述凸起的寬度W2
可選地，所述凹槽的底部面積和所述凸起的頂部面積的面積比為3：7至7：3。 Optionally, the area ratio of the bottom area of the groove and the top area of the protrusion is 3:7 to 7:3.
可選地，所述耐等離子體塗層的材質包括Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中的至少一種。 Optionally, the material of the plasma-resistant coating includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
可選地，所述襯底的材質包括鋁合金、不銹鋼、鎢或鈦中的至少一種。 Optionally, the substrate is made of at least one of aluminum alloy, stainless steel, tungsten or titanium.
一種等離子體反應裝置，包括：反應腔，所述反應腔內為等離子體環境；以及如上述任一項所述的零部件，所述零部件暴露於所述等離子體環境中。 A plasma reaction device includes: a reaction chamber, the inside of the reaction chamber is a plasma environment; and the component as described in any one of the above, the component is exposed to the plasma environment.
可選地，所述等離子體反應裝置為電容耦合等離子體反應裝置時，所述零部件包括噴淋頭、氣體分配板、上接地環、下接地環、氣體管路、聚焦環、絕緣環、靜電卡盤、覆蓋環或襯底固持框中的至少一種。 Optionally, when the plasma reaction device is a capacitively coupled plasma reaction device, the components include a shower head, a gas distribution plate, an upper ground ring, a lower ground ring, a gas pipeline, a focusing ring, an insulating ring, At least one of an electrostatic chuck, a cover ring, or a substrate holding frame.
可選地，所述等離子體反應裝置為電感耦合等離子體反應裝置時，所述零部件包括陶瓷蓋板、襯套、氣體噴嘴、氣體連接法蘭、聚焦環、絕緣環、靜電卡盤、覆蓋環或襯底固持框中的至少一種。 Optionally, when the plasma reaction device is an inductively coupled plasma reaction device, the parts include a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, and a cover. At least one of a ring or a substrate holding frame.
一種零部件加工方法，其包含下列步驟：提供零部件本體；以及對所述零部件本體進行加工形成如上述任一項所述的零部件。 A component processing method includes the following steps: providing a component body; and processing the component body to form a component as described in any one of the above.
可選地，對所述零部件本體進行加工形成所述零部件的方法包括：對所述零部件本體表面進行處理，形成所述襯底；在所述襯底表面形成所述耐等離子體塗層。 Optionally, the method of processing the component body to form the component includes: processing the surface of the component body to form the substrate; forming the plasma-resistant coating on the surface of the substrate layer.
可選地，在所述零部件本體表面不需要加工形成所述凹槽的部位設置有密封保護結構。 Optionally, a sealing protection structure is provided at a portion of the component body surface that does not require processing to form the groove.
可選地，通過電化學腐蝕方法對所述零部件本體表面進行加工形成所述襯底，所述電化學腐蝕方法包括下列步驟：設置所述零部件本體為金屬導體，與電源的正極電性連接；設置石墨，與所述電源的負極電性連接；以及 將所述零部件本體浸泡於電解腐蝕液中，當接通零部件本體-電源-石墨電路時，所述零部件本體其未覆蓋有所述密封保護結構的部位發生電化學腐蝕形成所述凹槽。 Optionally, the surface of the component body is processed to form the substrate through an electrochemical corrosion method. The electrochemical corrosion method includes the following steps: setting the component body as a metal conductor electrically connected to the positive electrode of the power supply. Connect; set graphite to be electrically connected to the negative electrode of the power supply; and The component body is immersed in the electrolytic corrosion solution. When the component body-power supply-graphite circuit is connected, electrochemical corrosion occurs in the parts of the component body that are not covered by the sealing protection structure to form the concave groove.
可選地，通過等離子體蝕刻方法對所述零部件本體表面進行加工形成所述襯底，所述等離子體蝕刻方法包括：在真空環境中設置電場；向真空環境中通入製程氣體，製程氣體在射頻激勵作用下形成等離子體；等離子體在電場作用下對所述零部件本體其表面未覆蓋有所述密封保護結構的部位進行等離子體蝕刻以形成所述凹槽。 Optionally, the surface of the component body is processed to form the substrate through a plasma etching method. The plasma etching method includes: setting an electric field in a vacuum environment; introducing process gas into the vacuum environment. The process gas Plasma is formed under the action of radio frequency excitation; the plasma performs plasma etching on the parts of the component body whose surface is not covered with the sealing protection structure under the action of an electric field to form the groove.
本發明的有益效果是：本發明實施例提供的一種用於等離子體反應裝置中的零部件，等離子體反應裝置包括反應腔，反應腔內為等離子體環境，零部件暴露於所述等離子體環境中；零部件包括襯底和塗覆在襯底表面的耐等離子體塗層，襯底的表面設置有複數個凹槽，相鄰凹槽間形成凸起；每個凹槽的寬度W1
1:凹槽 1: Groove
2:凸起 2: bulge
301:襯套 301: Bushing
302:氣體噴嘴 302:Gas nozzle
303:靜電卡盤 303:Electrostatic chuck
304:聚焦環 304: Focus ring
305:絕緣環 305:Insulation ring
306:覆蓋環 306: Covering Ring
307:襯底固持框 307:Substrate holding frame
308:陶瓷蓋板 308:Ceramic cover plate
309:反應腔 309:Reaction chamber
A:襯底 A:Substrate
B:耐等離子體塗層 B: Plasma resistant coating
W:待處理基片 W: substrate to be processed
為了更清楚地說明本發明具體實施方式或習知技術中的技術方案，下面將對具體實施方式或現有技術描述中所需要使用的附圖作簡單地介紹。在所有附圖中，類似的元件或部分一般由類似的附圖標記標識。附圖中，各元件或部分並不一定按照實際的比例繪製。 In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the conventional technology, the drawings required to be used in the description of the specific embodiments or prior art will be briefly introduced below. Throughout the drawings, similar elements or portions are generally identified by similar reference numerals. In the drawings, elements or parts are not necessarily drawn to actual scale.
圖1是本發明的等離子體反應裝置的一種實施例的剖視圖；圖2是本發明的零部件的一種實施例的剖視圖；圖3是圖2中C的局部放大圖；圖4是本發明的零部件的另一種實施例的俯視圖；圖5是本發明的零部件的又一種實施例的俯視圖；圖6是本發明的零部件的再一種實施例的俯視圖；以及圖7是本發明的零部件加工方法的一種實施例的流程圖。 Figure 1 is a cross-sectional view of an embodiment of the plasma reaction device of the present invention; Figure 2 is a cross-sectional view of an embodiment of the component of the present invention; Figure 3 is a partial enlarged view of C in Figure 2; Figure 4 is a partial enlarged view of C of the present invention; Figure 5 is a top view of another embodiment of the component of the present invention; Figure 6 is a top view of yet another embodiment of the component of the present invention; and Figure 7 is a top view of another embodiment of the component of the present invention. A flow chart of an embodiment of a component processing method.
等離子體反應裝置包括反應腔，反應腔內為等離子體環境，零部件暴露在等離子體環境中，由於等離子體具有較強的腐蝕性，因此，需要在襯底表面塗覆耐腐蝕塗層，以阻擋等離子體對襯底的腐蝕。但是，習知的半導體元件製造過程中，塗覆在襯底上的耐等離子體塗層容易開裂剝落。 The plasma reaction device includes a reaction chamber, which is a plasma environment. Parts and components are exposed to the plasma environment. Since plasma is highly corrosive, a corrosion-resistant coating needs to be coated on the surface of the substrate to Block plasma corrosion of the substrate. However, during the conventional semiconductor device manufacturing process, the plasma-resistant coating coated on the substrate is prone to cracking and peeling.
研究發現：在金屬襯底與耐等離子體塗層之間設置陽極氧化層，以陽極氧化層來實現金屬襯底與耐等離子體塗層二者之間不同熱膨脹係數的過渡。其具體製作方法包括，在金屬襯底上先做陽極氧化處理，形成一層陽極氧化層，然後再在陽極氧化層表面通過等離子體噴塗、PVD或 者CVD方法塗覆一層耐等離子體塗層(如Y2O3)。這種結構能夠使得陽極氧化層與金屬襯底具有良好的結合力，但對於耐等離子體塗層與陽極氧化層而言，結合力較弱，容易出現耐等離子體塗層脫落的現象。這是因為，在一般的陽極氧化層表面處理製程中，形成的孔狀結構是空心的，需要用一定的填充方式(例如，高溫水或者水蒸氣封孔)對孔進行填充，以使陽極氧化層具有一定的緻密性。對於這些封孔而言，孔表面會與水/水蒸氣結合形成一定量的氫氧化合物(例如，對於6061系列的鋁合金而言，陽極氧化層封孔後其表面就會形成Al-O-OH類的結構)。而這些含有氫氧鍵的陽極氧化層在受到熱衝擊時，氫氧鍵容易發生斷裂，形成微裂紋，並沿著耐等離子體塗層和陽極氧化層之間的介面進一步擴展，甚至造成耐等離子體塗層的脫落。 The study found that an anodized layer is provided between the metal substrate and the plasma-resistant coating, and the anodized layer is used to realize the transition of different thermal expansion coefficients between the metal substrate and the plasma-resistant coating. The specific production method includes: first performing anodizing treatment on the metal substrate to form an anodized layer, and then coating a layer of plasma-resistant coating (such as Y 2 O 3 ). This structure can make the anodized layer and the metal substrate have good bonding force, but for the plasma-resistant coating and the anodized layer, the bonding force is weak, and the plasma-resistant coating is prone to peeling off. This is because in the general surface treatment process of the anodized layer, the pore-like structure formed is hollow, and a certain filling method (for example, high-temperature water or water vapor sealing) is needed to fill the pores in order to make the anodization The layer has a certain density. For these sealing holes, the surface of the holes will combine with water/water vapor to form a certain amount of hydroxide compounds (for example, for the 6061 series of aluminum alloys, Al-O- will be formed on the surface after the anodic oxide layer seals the holes. OH type structure). When these anodized layers containing hydrogen-oxygen bonds are subjected to thermal shock, the hydrogen-oxygen bonds are easily broken, forming micro-cracks, which further expand along the interface between the plasma-resistant coating and the anodized layer, and even cause plasma-resistant Loss of body coating.
又例如，在襯底與耐等離子體塗層之間設置氧化物過渡層，以氧化物過渡層來實現金屬襯底與耐等離子體塗層二者之間不同熱膨脹係數的過渡。其具體製作方法包括，在金屬襯底上通過等離子體噴塗、PVD或者CVD方法塗覆一層氧化物過渡層(通常是金屬襯底的氧化物)，然後再通過等離子體噴塗、PVD或者CVD方法塗覆一層耐等離子體塗層(如Y2O3)。採用這種結構的塗層具有一定的耐熱衝擊性能，但是由於金屬襯底和氧化物過渡層之間熱膨脹係數的差異相對於氧化物過渡層和耐等離子體塗層之間的熱膨脹係數的差異要大的多(6061鋁合金熱膨脹係數為21.6x10-6，Al2O3熱膨脹係數為7.2x10-6，Y2O3熱膨脹係數為7x10-6)，因此氧化物過渡層的耐熱衝擊性能有限，耐等離子體塗層在受到反應腔環境的熱衝擊和等離子體的物理轟擊作用下，一旦形成微裂紋，就會迅速沿著 氧化物過渡層和金屬襯底之間的介面進一步擴展，造成耐等離子體塗層的脫落。 For another example, an oxide transition layer is provided between the substrate and the plasma-resistant coating, and the oxide transition layer is used to realize the transition of different thermal expansion coefficients between the metal substrate and the plasma-resistant coating. The specific manufacturing method includes coating an oxide transition layer (usually the oxide of the metal substrate) on the metal substrate by plasma spraying, PVD or CVD, and then coating it by plasma spraying, PVD or CVD. Cover with a plasma-resistant coating (such as Y 2 O 3 ). The coating using this structure has certain thermal shock resistance, but due to the difference in thermal expansion coefficient between the metal substrate and the oxide transition layer compared to the difference in thermal expansion coefficient between the oxide transition layer and the plasma-resistant coating, Much larger (the thermal expansion coefficient of 6061 aluminum alloy is 21.6x10 -6 , the thermal expansion coefficient of Al 2 O 3 is 7.2x10 -6 , and the thermal expansion coefficient of Y 2 O 3 is 7x10 -6 ). Therefore, the thermal shock resistance of the oxide transition layer is limited. Under the thermal shock of the reaction chamber environment and the physical bombardment of the plasma, once microcracks are formed in the plasma-resistant coating, they will rapidly expand further along the interface between the oxide transition layer and the metal substrate, causing plasma resistance. Loss of body coating.
顯然，以上方案仍然未能較好地解決塗覆在襯底上的耐等離子體塗層容易開裂剝落的問題，因此，本發明提出了一種用於等離子體反應裝置中的零部件、等離子體反應裝置及零部件的加工方法。 Obviously, the above solution still cannot solve the problem that the plasma-resistant coating coated on the substrate is easy to crack and peel off. Therefore, the present invention proposes a component and a plasma reaction device for use in a plasma reaction device. Methods of processing devices and parts.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例僅僅是本發明的一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域普通技術人員在沒有作出創造性勞動前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。 The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present invention.
需要說明，本發明實施例中所有方向性指示(諸如上、下、左、右、前、後......)僅用於解釋在某一特定姿態(如附圖所示)下各部件之間的相對位置關係、運動情況等，如果該特定姿態發生改變時，則該方向性指示也相應地隨之改變。 It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiment of the present invention are only used to explain each direction in a specific posture (as shown in the accompanying drawings). The relative positional relationship between components, movement conditions, etc., if the specific posture changes, the directional indication will also change accordingly.
還需要說明的是，當元件被稱為“固定於”或“設置於”另一個元件上時，它可以直接在另一個元件上或者可能同時存在居中元件。當一個元件被稱為是“連接”另一個元件，它可以是直接連接另一個元件或者可能同時存在居中元件。 It should also be noted that when an element is referred to as being "mounted" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is said to be "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
另外，在本發明中涉及“第一”“第二”等的描述僅用於描述目的，而不能理解為指示或暗示其相對重要性或者隱含指明所指示的技術特徵的數量。由此，限定有“第一”“第二”的特徵可以明示或者隱含地包括至少一個該特徵。另外，各個實施例之間的技術方案可以相互結合，但是必 須是以本領域的通常知識者能夠實現為基礎，當技術方案的結合出現相互矛盾或無法實現時應當認為這種技術方案的結合不存在，也不在本發明要求的保護範圍之內。 In addition, descriptions referring to "first", "second", etc. in the present invention are for descriptive purposes only and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, features defined by "first" and "second" may explicitly or implicitly include at least one of these features. In addition, the technical solutions in various embodiments can be combined with each other, but they must It must be based on what a person with ordinary knowledge in the art can realize. When the combination of technical solutions is contradictory or cannot be realized, it should be considered that such combination of technical solutions does not exist and is not within the protection scope of the present invention.
圖1是本發明的等離子體反應裝置的一種實施例的剖視圖。 Figure 1 is a cross-sectional view of an embodiment of the plasma reaction device of the present invention.
請參考圖1，等離子體反應裝置包括：反應腔309，反應腔309內為等離子體環境；以及零部件，零部件暴露於等離子體環境中。 Please refer to Figure 1. The plasma reaction device includes: a reaction chamber 309, which is a plasma environment; and components, which are exposed to the plasma environment.
等離子體反應裝置還包括：基座，基座用於承載待處理基片W，等離子體用於對待處理基片W進行處理。由於等離子體具有較強的腐蝕性，為了防止襯底的表面被等離子體腐蝕，因此需要在襯底的表面塗覆耐等離子體塗層。 The plasma reaction device also includes: a base for carrying the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of the substrate from being corroded by the plasma, it is necessary to coat the surface of the substrate with a plasma-resistant coating.
在本實施例中，等離子體反應裝置為電感耦合等離子體反應裝置，相應的，暴露於等離子體環境中的零部件包括：襯套301、氣體噴嘴302、靜電卡盤303、聚焦環304、絕緣環305、覆蓋環306、襯底固持框307、陶瓷蓋板308或氣體連接法蘭(未圖示)。這些零部件的襯底表面需要塗覆耐等離子體塗層以防止等離子體腐蝕。 In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Correspondingly, the components exposed to the plasma environment include: bushing 301, gas nozzle 302, electrostatic chuck 303, focus ring 304, insulation Ring 305, cover ring 306, substrate holding frame 307, ceramic cover plate 308 or gas connection flange (not shown). The substrate surface of these parts needs to be coated with a plasma-resistant coating to prevent plasma corrosion.
具體應用中，等離子體反應裝置也可以為電容耦合等離子體反應裝置，相應的，暴露於等離子體環境中的零部件包括：噴淋頭、氣體分配板、上接地環、下接地環、氣體管路、聚焦環、絕緣環、靜電卡盤、覆蓋環或襯底固持框中的至少一種。這些零部件的襯底表面需要塗覆耐等離子體塗層以防止等離子體腐蝕。 In specific applications, the plasma reaction device can also be a capacitively coupled plasma reaction device. Correspondingly, the components exposed to the plasma environment include: shower head, gas distribution plate, upper ground ring, lower ground ring, and gas pipe. At least one of a path, a focusing ring, an insulating ring, an electrostatic chuck, a covering ring or a substrate holding frame. The substrate surface of these parts needs to be coated with a plasma-resistant coating to prevent plasma corrosion.
以下對零部件進行詳細說明：圖2是本發明的零部件的一種實施例的剖視圖。 The components are described in detail below: Figure 2 is a cross-sectional view of an embodiment of the components of the present invention.
請參考圖2、圖3，零部件包括襯底A和塗覆在襯底A表面的耐等離子體塗層B。襯底A用於塗覆耐等離子體塗層B的表面設置有複數個凹槽1，每個凹槽1的深度H1
當在襯底A上塗覆耐等離子體塗層B時，襯底A上連續的凹槽1和凸起2形成的凹凸特徵，使得耐等離子體塗層不僅與襯底A表面接觸，還與襯底A表面凹槽1的側壁和底部表面接觸，即：襯底A和耐等離子體塗層B二者之間的接觸面積增大，因此，有利於提高二者之間的結合力，結合關係更加穩定，耐等離子體塗層B不易從襯底A表面脫落，則不易發生顆粒污染，且耐等離子體塗層B對襯底A的保護能力較強，使襯底A不易被腐蝕。 When the plasma-resistant coating B is coated on the substrate A, the uneven features formed by the continuous grooves 1 and protrusions 2 on the substrate A make the plasma-resistant coating not only in contact with the surface of the substrate A, but also with the substrate A. The side walls of the groove 1 on the surface of the bottom A are in contact with the bottom surface, that is, the contact area between the substrate A and the plasma-resistant coating B is increased. Therefore, it is beneficial to improve the bonding force and bonding relationship between the two. It is more stable. The plasma-resistant coating B is not easy to fall off from the surface of the substrate A, so particle contamination is less likely to occur. Moreover, the plasma-resistant coating B has a strong protective ability on the substrate A, making the substrate A less susceptible to corrosion.
並且，上述襯底A與耐等離子體塗層B通過上述凹凸特徵接觸，二者之間的接觸面積增大，使原本集中在耐等離子體塗層B上的熱應力，能夠通過較大的接觸面積更好地傳導至襯底A，從而避免耐等離子體塗層B因熱應力集中產生微裂紋、裂紋擴展甚至剝落。 Moreover, the substrate A and the plasma-resistant coating B are in contact through the concave and convex features, and the contact area between the two is increased, so that the thermal stress originally concentrated on the plasma-resistant coating B can pass through the larger contact The area is better conducted to the substrate A, thereby preventing the plasma-resistant coating B from causing micro-cracks, crack expansion or even peeling due to thermal stress concentration.
再有，當耐等離子體塗層B上產生微裂紋時，複數個的凹槽1和凸起2能夠延長微裂紋擴展傳遞的路徑，進一步降低了耐等離子體塗層B剝落的風險。 Furthermore, when microcracks occur on the plasma-resistant coating B, the plurality of grooves 1 and protrusions 2 can extend the path for the microcracks to propagate, further reducing the risk of the plasma-resistant coating B peeling off.
另有，襯底A上的凹槽1的深度H1和凸起2的高度(H1)均遠小於1μm，因此塗覆在襯底A表面的耐等離子體塗層B，其表面粗糙度與襯底A的表面粗糙度差別不大，均較為平整，並不需要對耐等離子體塗層B進行額外的拋光處理，簡化了零部件的加工製程。 In addition, the depth H1 of the groove 1 and the height (H1) of the protrusion 2 on the substrate A are both much less than 1 μm. Therefore, the surface roughness of the plasma-resistant coating B coated on the surface of the substrate A is different from that of the lining. The surface roughness of bottom A is not much different and is relatively flat. There is no need for additional polishing of plasma-resistant coating B, which simplifies the processing of parts.
進一步地，本實施例中同時設置了凸起2的寬度W2
並且，凸起2本身的寬度W2尺寸不大，提高了凹槽1分佈的密度，能夠進一步增大襯底A和耐等離子體塗層B的接觸面積，進而增大二者之間的結合力。 Moreover, the width W2 of the protrusion 2 itself is not large, which increases the distribution density of the grooves 1 and can further increase the contact area between the substrate A and the plasma-resistant coating B, thereby increasing the bonding force between the two. .
更進一步地，還可以設置凹槽1的底部面積和凸起2的頂部面積的面積比為3：7~7：3。限定面積比大於等於3：7，可以保證凹槽1的分佈密度，而限定面積比小於等於7：3，可以避免凸起2的尺寸過小，避免凹槽1和凸起2與耐等離子體塗層B的形變差異造成的損傷。 Furthermore, the area ratio of the bottom area of the groove 1 and the top area of the protrusion 2 can also be set to 3:7~7:3. The limited area ratio of greater than or equal to 3:7 can ensure the distribution density of groove 1, while the limited area ratio of less than or equal to 7:3 can prevent the size of protrusion 2 from being too small, and prevent grooves 1 and protrusions 2 from interfering with the plasma-resistant coating. Damage caused by the difference in deformation of layer B.
以上結構中，襯底A的材質可以設置為包括鋁合金、不銹鋼、鎢、鈦中的至少一種。以上材質都是用於等離子體反應裝置中的零部件的常用材料，性價比較高。耐等離子體塗層B的材質，包括Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中的至少一種。 In the above structure, the material of substrate A may be set to include at least one of aluminum alloy, stainless steel, tungsten, and titanium. The above materials are all commonly used materials for parts in plasma reaction devices and are cost-effective. The material of the plasma-resistant coating B includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
因以上零部件其本身結構穩定，耐等離子體塗層B不易開裂或者從襯底A的表面脫落，能夠在等離子體環境中對襯底A進行很好的耐等離子腐蝕保護，所以，本發明的等離子體反應裝置，其零部件的服役壽命延長、運營成本降低並且反應腔的穩定性提高。 Since the above parts have a stable structure, the plasma-resistant coating B is not easy to crack or fall off from the surface of the substrate A, and can provide good plasma corrosion protection to the substrate A in a plasma environment. Therefore, the invention The service life of the plasma reaction device is extended, the operating cost is reduced, and the stability of the reaction chamber is improved.
圖4、圖5、圖6示出了本發明的用於等離子體反應裝置中的零部件的三個實施例的俯視圖，其中凹槽1和凸起2呈不同規則排列。 Figures 4, 5, and 6 show top views of three embodiments of components used in plasma reaction devices of the present invention, in which grooves 1 and protrusions 2 are arranged in different regular patterns.
圖4中，複數個凹槽1呈n列、m行的陣列式排布(n、m均為正整數)，相鄰行的凹槽1對齊設置。 In Figure 4, a plurality of grooves 1 are arranged in an array of n columns and m rows (n and m are both positive integers), and the grooves 1 in adjacent rows are aligned.
圖5中，複數個凹槽1呈i列、j行的陣列式排布(i、j均為正整數)，相鄰行的凹槽1交錯設置。 In Figure 5, a plurality of grooves 1 are arranged in an array of i columns and j rows (i and j are both positive integers), and the grooves 1 in adjacent rows are staggered.
圖6中，複數個凹槽1呈條形槽形式間隔設置，複數個凹槽1的延伸方向相互平行。 In Figure 6, a plurality of grooves 1 are arranged at intervals in the form of strip grooves, and the extending directions of the plurality of grooves 1 are parallel to each other.
以上三種實施例皆為舉例說明，只要襯底A的表面設置有符合尺寸限定範圍的凹槽1和凸起2即可。 The above three embodiments are all examples, as long as the surface of the substrate A is provided with grooves 1 and protrusions 2 that meet the limited size range.
本發明還提供了一種零部件的加工方法，包括下列步驟：提供零部件本體；以及對零部件本體進行加工形成上述零部件。 The invention also provides a method for processing parts, which includes the following steps: providing a part body; and processing the part body to form the above-mentioned parts.
此處，如圖7所示，可以設置對零部件本體進行加工形成上述零部件的方法包括下列步驟：對零部件本體表面進行處理，形成襯底A；以及在襯底A表面形成耐等離子體塗層B。 Here, as shown in Figure 7, the method for processing the component body to form the above-mentioned component can include the following steps: processing the surface of the component body to form a substrate A; and forming a plasma-resistant material on the surface of the substrate A Coating B.
進一步地，在零部件本體其表面不需要加工形成凹槽1的部位設置有密封保護結構。 Furthermore, a sealing protection structure is provided at a part of the component body where the surface does not need to be processed to form the groove 1 .
具體地，可以通過電化學腐蝕方法對零部件本體表面進行加工形成襯底A，該電化學腐蝕方法包括下列步驟：設置零部件本體為金屬導體，與電源的正極電性連接；設置石墨，與電源的負極電性連接；以及 將零部件本體浸泡於電解腐蝕液中，當接通零部件本體-電源-石墨電路時，零部件本體其未覆蓋有密封保護結構(此處的保護結構可以是能夠粘貼在零部件本體表面的膠條等)的部位發生電化學腐蝕形成凹槽1。 Specifically, the surface of the component body can be processed to form the substrate A through an electrochemical corrosion method. The electrochemical corrosion method includes the following steps: setting the component body as a metal conductor and electrically connected to the positive electrode of the power supply; setting graphite, and The negative electrical connection of the power supply; and Immerse the component body in the electrolytic corrosion solution. When the component body-power supply-graphite circuit is connected, the component body is not covered with a sealing protective structure (the protective structure here can be affixed to the surface of the component body) Glue strips, etc.) are electrochemically corroded to form grooves 1.
在本實施例的基礎上，可以通過控制電解腐蝕液的濃度和/或上述電路的通電時長和/或上述電路的通電電流大小，控制上述電化學腐蝕形成的凹槽1的深度和寬度，使其滿足製程要求。以上方法簡單並且容易實現，操作方便。 On the basis of this embodiment, the depth and width of the groove 1 formed by the electrochemical etching can be controlled by controlling the concentration of the electrolytic etching solution and/or the energizing time of the above circuit and/or the energizing current of the above circuit. Make it meet the process requirements. The above method is simple and easy to implement, and is easy to operate.
或者，通過等離子體蝕刻方法對零部件本體表面進行加工形成襯底A，該等離子體蝕刻方法包括下列步驟：在真空環境中設置電場；向真空環境中通入製程氣體，製程氣體在射頻激勵作用下形成等離子體；以及等離子體在電場作用下對零部件本體其表面未覆蓋有所密封保護結構(此處的保護結構能夠保護零部件本體上其所覆蓋的部分不受等離子體蝕刻，例如可以選用耐等離子體塗層)的部位進行等離子體蝕刻以形成凹槽1。 Alternatively, the surface of the component body is processed to form the substrate A through a plasma etching method. The plasma etching method includes the following steps: setting an electric field in a vacuum environment; introducing process gas into the vacuum environment, and the process gas acts under radio frequency excitation Plasma is formed under the action of the electric field; and the surface of the component body is not covered by the plasma under the action of the electric field and a sealing protective structure is provided (the protective structure here can protect the covered part of the component body from plasma etching, for example Plasma etching is performed on the selected area (plasma-resistant coating) to form groove 1.
在本實施例的基礎上，可以通過控制上述真空環境中的氣體壓強大小和/或上述形成的等離子體的濃度和/或上述電場的場強大小，控制上述等離子體蝕刻形成的所述凹槽1的深度和寬度，使其滿足製程要求。以上方法簡單並且容易實現，操作方便。 On the basis of this embodiment, the groove formed by the plasma etching can be controlled by controlling the gas pressure in the vacuum environment and/or the concentration of the plasma formed and/or the strength of the electric field. 1 depth and width to meet the process requirements. The above method is simple and easy to implement, and is easy to operate.
最後應說明的是：以上各實施例僅用以說明本發明的技術方案，而非對其限制；儘管參照前述各實施例對本發明進行了詳細的說明，本領域的通常知識者應當理解：其依然可以對前述各實施例所記載的技術 方案進行修改，或者對其中部分或者全部技術特徵進行等同替換；而這些修改或者替換，並不使相應技術方案的本質脫離本發明各實施例技術方案的範圍，其均應涵蓋在本發明的申請專利範圍和說明書的範圍當中。尤其是，只要不存在結構衝突，各個實施例中所提到的各項技術特徵均可以任意方式組合起來。本發明並不局限於文中公開的特定實施例，而是包括落入申請專利範圍的範圍內的所有技術方案。 Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technologies described in the foregoing embodiments can still be used Modify the solution, or make equivalent substitutions for some or all of the technical features; these modifications or substitutions do not cause the essence of the corresponding technical solution to deviate from the scope of the technical solution of each embodiment of the present invention, and they shall all be covered by the application of the present invention. within the scope of the patent and the specification. In particular, as long as there is no structural conflict, the technical features mentioned in the various embodiments can be combined in any way. The present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the patent application.
1:凹槽1: Groove
2:凸起2: bulge
A:襯底A:Substrate
B:耐等離子體塗層B: Plasma resistant coating
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010361663.1A CN113594014B (en) | 2020-04-30 | 2020-04-30 | Component, plasma reaction device, and component processing method |
| CN202010361663.1 | 2020-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202143276A TW202143276A (en) | 2021-11-16 |
| TWI823071B true TWI823071B (en) | 2023-11-21 |
Family
ID=78237087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110110053A TWI823071B (en) | 2020-04-30 | 2021-03-19 | Components, plasma reaction device and component processing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113594014B (en) |
| TW (1) | TWI823071B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5868952A (en) * | 1995-03-17 | 1999-02-09 | Ebara Corporation | Fabrication method with energy beam |
| US20020081863A1 (en) * | 2000-10-20 | 2002-06-27 | Miyoko Shimada | Method of manufacturing semiconductor device |
| US6506665B1 (en) * | 1997-12-26 | 2003-01-14 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
| TW201621986A (en) * | 2014-09-16 | 2016-06-16 | Lpkf Laser & Electronics Ag | Method for introducing at least one cutout or aperture into a sheetlike workpiece |
| US20170166784A1 (en) * | 2015-12-13 | 2017-06-15 | International Business Machines Corporation | Enhanced adhesive materials and processes for 3d applications |
| TW201933453A (en) * | 2017-04-20 | 2019-08-16 | 德商希爾提克特拉股份有限公司 | Method for thinning solid layers equipped with components |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202535A (en) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Film forming device |
| JPH10315384A (en) * | 1997-05-20 | 1998-12-02 | Dainippon Printing Co Ltd | Film having coat formed thereon and manufacture thereof |
| US6379492B2 (en) * | 1998-10-31 | 2002-04-30 | Applied Materials, Inc. | Corrosion resistant coating |
| TW465017B (en) * | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
| JP2002306957A (en) * | 2001-04-11 | 2002-10-22 | Matsushita Electric Ind Co Ltd | Plasma treating device |
| US6777045B2 (en) * | 2001-06-27 | 2004-08-17 | Applied Materials Inc. | Chamber components having textured surfaces and method of manufacture |
| JP3850277B2 (en) * | 2001-12-03 | 2006-11-29 | 東芝セラミックス株式会社 | Method for manufacturing plasma resistant member |
| US6899798B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Reusable ceramic-comprising component which includes a scrificial surface layer |
| JP2004002101A (en) * | 2002-05-31 | 2004-01-08 | Toshiba Ceramics Co Ltd | Plasma resistant member and its manufacturing process |
| KR100606089B1 (en) * | 2003-08-01 | 2006-07-28 | 동부일렉트로닉스 주식회사 | Sputtering Etching Apparatus |
| JP3917966B2 (en) * | 2003-09-29 | 2007-05-23 | 株式会社アルバック | Surface treatment method of aluminum or aluminum alloy used for vacuum apparatus and parts thereof, vacuum apparatus and parts thereof |
| US7910218B2 (en) * | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
| KR100618630B1 (en) * | 2003-10-24 | 2006-09-13 | 도시바세라믹스가부시키가이샤 | Plasma resistant member, manufacturing method for the same and method of forming a thermal spray coat |
| US7323230B2 (en) * | 2004-08-02 | 2008-01-29 | Applied Materials, Inc. | Coating for aluminum component |
| US7579067B2 (en) * | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
| JP2008270595A (en) * | 2007-04-23 | 2008-11-06 | Texas Instr Japan Ltd | Reaction product peeling preventive structure and manufacturing method thereof, and manufacturing method of semiconductor device using the structure |
| KR100872328B1 (en) * | 2008-02-11 | 2008-12-05 | 주식회사 코미코 | Internal member of plasma processing apparatus and method for manufacturing the same |
| KR100966132B1 (en) * | 2008-07-25 | 2010-06-25 | 주식회사 코미코 | Plasma-Resistant Ceramic Coated Substrate |
| JP2012057251A (en) * | 2010-08-13 | 2012-03-22 | Toshiba Corp | Protective film, method for forming the same, apparatus for manufacturing semiconductor, and plasma treatment apparatus |
| CN103794458B (en) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | For the parts within plasma process chamber and manufacture method |
| JP5578383B2 (en) * | 2012-12-28 | 2014-08-27 | Ｔｏｔｏ株式会社 | Plasma resistant material |
| US9449797B2 (en) * | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
| CN103320799B (en) * | 2013-06-27 | 2014-11-19 | 西安空间无线电技术研究所 | Method for restraining secondary electron yield on silver coating surface of microwave component |
| US9663870B2 (en) * | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
| JP6714978B2 (en) * | 2014-07-10 | 2020-07-01 | 東京エレクトロン株式会社 | Parts for plasma processing apparatus, plasma processing apparatus, and method for manufacturing parts for plasma processing apparatus |
| JP6084996B2 (en) * | 2015-02-04 | 2017-02-22 | 株式会社不二機販 | Strengthening adhesion of low temperature ceramic coating |
| GB201517333D0 (en) * | 2015-10-01 | 2015-11-18 | Rolls Royce Plc | A method of applying a thermal barrier coating to a metallic article and a thermal barrier coated metallic article |
| US20170121232A1 (en) * | 2015-10-30 | 2017-05-04 | Rolls-Royce Corporation | Coating interface |
| CN106637182A (en) * | 2015-11-04 | 2017-05-10 | 中国人民解放军装甲兵工程学院 | Method for improving fatigue strength of coating layer by double-layer texture coupling effect |
| KR20180072917A (en) * | 2016-12-21 | 2018-07-02 | 삼성전자주식회사 | dielectric window, plasma apparatus including the same, and method for manufacturing dielectric window |
| CN107151770A (en) * | 2017-05-16 | 2017-09-12 | 中国人民解放军装甲兵工程学院 | It is a kind of to change the structures and methods that texture recess diameter improves plasma sprayed coating bond strength |
| CN107761072A (en) * | 2017-10-09 | 2018-03-06 | 江苏大学 | A kind of matrix and preparation method of the enhancing of face coat bond strength |
| CN109440052A (en) * | 2018-11-29 | 2019-03-08 | 沈阳富创精密设备有限公司 | A kind of preparation method of composite coating of atmospheric plasma spraying yttria coating |
| CN109913801A (en) * | 2019-04-24 | 2019-06-21 | 苏州大学 | The preparation method of matrix surface plasmaassisted laser texturing PVD coating |
-
2020
- 2020-04-30 CN CN202010361663.1A patent/CN113594014B/en active Active
-
2021
- 2021-03-19 TW TW110110053A patent/TWI823071B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5868952A (en) * | 1995-03-17 | 1999-02-09 | Ebara Corporation | Fabrication method with energy beam |
| US6506665B1 (en) * | 1997-12-26 | 2003-01-14 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
| US20020081863A1 (en) * | 2000-10-20 | 2002-06-27 | Miyoko Shimada | Method of manufacturing semiconductor device |
| TW201621986A (en) * | 2014-09-16 | 2016-06-16 | Lpkf Laser & Electronics Ag | Method for introducing at least one cutout or aperture into a sheetlike workpiece |
| US20170166784A1 (en) * | 2015-12-13 | 2017-06-15 | International Business Machines Corporation | Enhanced adhesive materials and processes for 3d applications |
| TW201933453A (en) * | 2017-04-20 | 2019-08-16 | 德商希爾提克特拉股份有限公司 | Method for thinning solid layers equipped with components |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113594014B (en) | 2024-04-12 |
| TW202143276A (en) | 2021-11-16 |
| CN113594014A (en) | 2021-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11769683B2 (en) | Chamber component with protective ceramic coating containing yttrium, aluminum and oxygen | |
| US20180151401A1 (en) | Substrate support assembly having a plasma resistant protective layer | |
| JP5593490B2 (en) | Plasma etching reactor, component thereof and method for processing semiconductor substrate | |
| JP5293211B2 (en) | Electrostatic chuck and method of manufacturing electrostatic chuck | |
| KR101261706B1 (en) | Substrate mounting table and method for manufacturing the same, and substrate processing apparatus | |
| US20090243236A1 (en) | Electrostatic chuck and manufacturing method thereof | |
| JP2006351949A (en) | Substrate mounting base, method for manufacturing the same and substrate processing apparatus | |
| JP2007524993A (en) | A barrier layer for a processing member and a method of forming the same. | |
| TWI723031B (en) | Plasma processing device and nozzle | |
| US20140127911A1 (en) | Palladium plated aluminum component of a plasma processing chamber and method of manufacture thereof | |
| US20230092570A1 (en) | Method for conditioning semiconductor processing chamber components | |
| JP2008138283A (en) | Plasma reactor substrate mounting surface texturing | |
| JP2010258280A (en) | Electrostatic chuck, and method of manufacturing the same | |
| TW202114097A (en) | Method for processing electrostatic chuck using ALD process and products thereof, and operation method of plasma processing device effectively solving the problem of arc discharge and introducing no particle and metal pollution in the process | |
| CN103866286A (en) | Component used inside semiconductor substrate reaction chamber and manufacturing method thereof | |
| TW202034364A (en) | Shower head and gas processing apparatus | |
| TWI823071B (en) | Components, plasma reaction device and component processing method | |
| KR100995250B1 (en) | Electrostatic chuck containing buffer layer for reducing thermal stress | |
| US10269544B2 (en) | Gas ring for plasma system and method of manufacturing the same | |
| CN108538744B (en) | Chuck device and semiconductor processing equipment | |
| CN114256047B (en) | Semiconductor component, coating forming method and plasma reaction apparatus | |
| JP7097758B2 (en) | Shower head and plasma processing equipment | |
| JP2006222240A (en) | Plasma processing apparatus | |
| TW201416489A (en) | Gas spray head and method for manufacturing the same | |
| KR101355505B1 (en) | Electro static chuck and method for electro static chuck |