TW202034364A - Shower head and gas processing apparatus - Google Patents

Shower head and gas processing apparatus Download PDF

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Publication number
TW202034364A
TW202034364A TW108141737A TW108141737A TW202034364A TW 202034364 A TW202034364 A TW 202034364A TW 108141737 A TW108141737 A TW 108141737A TW 108141737 A TW108141737 A TW 108141737A TW 202034364 A TW202034364 A TW 202034364A
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Taiwan
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corrosion
gas
diffusion space
gas diffusion
resistant
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TW108141737A
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Chinese (zh)
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田中孝幸
杉山正樹
島村貴春
大森貴史
南雅人
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

The present invention provides a shower head and a gas processing apparatus capable of suppressing corrosion even when a highly corrosive processing gas is used. The shower head, which is arranged in a gas processing apparatus for performing gas processing on a substrate and is used for supplying a corrosive processing gas into a chamber in which a substrate is disposed, comprises a base member; a shower plate having a plurality of gas ejection holes for ejecting the processing gas; and a gas diffusion space, which is arranged in a part between the base member and the shower plate, is supplied with the processing gas, and is communicated with the gas ejection holes. The basic materials of the base member and the shower plate are both composed of metals. The surface, which faces the gas diffusion space, of the base member, the surface, which faces the gas diffusion space, of the shower plate, and the gas ejection holes are covered by a corrosion resistant material or a corrosion resistant film.

Description

噴淋頭及氣體處理裝置Sprinkler head and gas processing device

本揭示係關於噴淋頭及氣體處理裝置。This disclosure relates to shower heads and gas treatment devices.

在液晶顯示裝置(LCD)等之平面面板顯示器(FPD)製造工程中，存在對矩形狀之玻璃基板之特定膜進行電漿蝕刻等之電漿處理的工程。作為如此之電漿處理裝置，具有如可以取得高真空度且高密度之電漿的大優點的感應耦合電漿(Inductively Coupled Plasma:ICP)處理裝置受到注目。In the process of manufacturing flat panel displays (FPD) such as liquid crystal display devices (LCD), there is a process of plasma etching a specific film of a rectangular glass substrate. As such a plasma processing device, an Inductively Coupled Plasma (ICP) processing device, which has great advantages such as high vacuum and high density plasma, has attracted attention.

以往之感應耦合電漿處理裝置係與被處理基板對應之矩形狀的介電質窗介於高頻天線和處理室之間，但是隨著基板之大型化，近來提案有使用金屬窗之感應耦合電漿處理裝置(專利文獻1)。在專利文獻1中，藉由分割矩形狀之金屬窗，絕緣被分割之金屬窗彼此，構成處理室之天壁，使構成金屬窗之複數分割片持有吐出氣體之噴淋頭的功能，而將處理氣體導入至腔室內。藉由如此之裝置，進行電漿蝕刻之情況，使用Cl2 氣體般之腐蝕性高的氣體。 [先前技術文獻] [專利文獻]In the conventional inductively coupled plasma processing device, a rectangular dielectric window corresponding to the substrate to be processed is located between the high-frequency antenna and the processing chamber. However, with the increase in size of the substrate, inductive coupling using metal windows has recently been proposed. Plasma processing device (Patent Document 1). In Patent Document 1, the rectangular metal window is divided to insulate the divided metal windows to form the sky wall of the processing chamber, and the plurality of divided pieces constituting the metal window function as a shower head that discharges gas. The processing gas is introduced into the chamber. With such a device, in the case of plasma etching, a highly corrosive gas like Cl 2 gas is used. [Prior Art Document] [Patent Document]

[專利文獻1]日本特開2016-225018號公報[Patent Document 1] JP 2016-225018 A

[發明所欲解決之問題][The problem to be solved by the invention]

本揭示提供即使使用高腐蝕性之處理氣體亦可以抑制腐蝕之噴淋頭及氣體處理裝置。 [解決問題之技術手段]The present disclosure provides a shower head and a gas processing device that can inhibit corrosion even if a highly corrosive processing gas is used. [Technical means to solve the problem]

與本揭示之一態樣有關之噴淋頭係在對基板施予氣體處理之氣體處理裝置中，對配置基板之腔室內，供給腐蝕性之處理氣體，該噴淋頭具備：基座構件；噴淋板，其係具有吐出處理氣體之複數氣體吐出孔；及氣體擴散空間，其係被設置在上述基座構件和上述噴淋板之間之一部分，導入上述處理氣體，與上述複數氣體吐出孔連通，上述基座構件及上述噴淋板係基材由金屬構成，上述基座構件之面對於上述氣體擴散空間的部分，以及上述噴淋板之面對於上述氣體擴散空間及上述氣體吐出孔之部分被耐蝕性金屬材或耐蝕性皮膜覆蓋。 [發明之效果]The shower head related to one aspect of the present disclosure is a gas processing device that applies gas processing to a substrate, and supplies corrosive processing gas to a chamber where the substrate is arranged. The shower head includes: a base member; The shower plate has a plurality of gas discharge holes for discharging processing gas; and a gas diffusion space is provided in a part between the base member and the shower plate, and the processing gas is introduced and the plural gas is discharged Holes are connected, the base member and the shower plate base material are made of metal, the surface of the base member faces the gas diffusion space, and the face of the shower plate faces the gas diffusion space and the gas discharge hole The part is covered by corrosion-resistant metal material or corrosion-resistant film. [Effects of Invention]

若藉由本揭示時，提供即使使用高腐蝕性之處理氣體亦可以抑制腐蝕之噴淋頭及氣體處理裝置。According to the present disclosure, a shower head and a gas processing device that can inhibit corrosion even if a highly corrosive processing gas is used.

以下，參照附件圖面針對實施型態予以說明。 [電漿處理裝置] 首先，針對適用與一實施型態有關之噴淋頭的電漿處理裝置進行說明。圖1為表示適用一實施型態所涉及之噴淋頭之電漿處理裝置之一例的剖面圖。Below, the implementation type will be explained with reference to the attached drawings. [Plasma processing device] First, a description will be given of a plasma processing device to which a shower head related to an embodiment is applied. FIG. 1 is a cross-sectional view showing an example of a plasma processing apparatus to which a shower head according to an embodiment is applied.

圖1所示之電漿處理裝置係作為感應耦合電漿處理裝置而被構成，可以適合使用於在矩形基板，例如FPD用玻璃基板上形成薄膜電晶體之時的金屬膜之蝕刻。The plasma processing device shown in FIG. 1 is configured as an inductively coupled plasma processing device, and can be suitably used for etching of metal films when forming thin film transistors on rectangular substrates, such as glass substrates for FPD.

該感應耦合電漿處理裝置具有由導電性材料，例如內壁面被陽極氧化處理之由鋁所構成之角筒形狀之氣密的本體容器1。該本體容器1被組裝成可分解，藉由接地線1a被電性接地。The inductively coupled plasma processing device has an airtight main body container 1 made of a conductive material, for example, aluminum having an anodized inner wall and formed of aluminum. The main body container 1 is assembled to be decomposable, and is electrically grounded by the ground wire 1a.

本體容器1藉由與本體容器1絕緣而形成的矩形狀之噴淋頭2被區劃成上下，上側成為區劃天線室之天線容器3，下側成為區劃處理室之腔室(處理容器)4。噴淋頭2當作金屬窗發揮功能，構成腔室4之天壁。The main container 1 is divided up and down by a rectangular shower head 2 formed by insulation from the main container 1. The upper side becomes the antenna container 3 for the antenna chamber, and the lower side becomes the chamber (processing container) 4 for the processing chamber. The shower head 2 functions as a metal window and forms the sky wall of the chamber 4.

在天線容器3之側壁3a和腔室4之側壁4a之間，設置有朝至本體容器1之內側突出的支持棚架5，及支持樑6。支持棚架5及支持樑6係由導電性材料構成，以鋁等之金屬為佳。噴淋頭2係經由絕緣構件7被分割成複數而構成。而且，被分割成複數之噴淋頭2之分割部分經由絕緣構件7被支持於支持棚架5及支持樑6。支持樑6成為藉由複數根之吊桿(無圖示)，被吊在本體容器1之頂棚的狀態。另外，即使藉由複數根之吊桿(無圖示)從本體容器1之頂棚懸吊噴淋頭2，以取代設置支持樑6亦可。Between the side wall 3a of the antenna container 3 and the side wall 4a of the chamber 4, a supporting shelf 5 protruding toward the inside of the main body container 1 and a supporting beam 6 are provided. The support scaffold 5 and the support beam 6 are made of conductive materials, preferably metals such as aluminum. The shower head 2 is divided into plural numbers via an insulating member 7 and configured. In addition, the divided parts of the shower head 2 divided into plural numbers are supported by the supporting shelf 5 and the supporting beam 6 via the insulating member 7. The support beam 6 is in a state of being suspended from the ceiling of the main body container 1 by a plurality of suspension rods (not shown). In addition, even if the sprinkler head 2 is suspended from the ceiling of the main container 1 by a plurality of suspenders (not shown), the supporting beam 6 can be replaced.

成為金屬窗之噴淋頭2之各分割部50如後述般，基材由非磁性體之金屬構成，具有基座構件52、具有複數氣體吐出孔54之噴淋板53，和基座構件52和噴淋板53之間之一部分的箱型氣體擴散空間51。在基座構件52之中央部具有凹部，基座構件52之凹部之外側部分和噴淋板53被螺絲固定，被基座構件52之凹部和噴淋板53包圍之區域成為氣體擴散空間51。在氣體擴散空間51，從處理氣體供給機構20經由氣體供給管21導入處理氣體。氣體擴散空間51與複數氣體吐出孔54連通，處理氣體從氣體擴散空間51經由複數氣體吐出孔54被吐出。The divided parts 50 of the shower head 2 that become the metal window are as described later. The base material is made of a non-magnetic metal, and has a base member 52, a shower plate 53 having a plurality of gas discharge holes 54, and a base member 52 A part of the box-shaped gas diffusion space 51 between and the shower plate 53. The base member 52 has a recess in the center. The outer part of the recess of the base member 52 and the shower plate 53 are fixed by screws. The area surrounded by the recess of the base member 52 and the shower plate 53 becomes the gas diffusion space 51. In the gas diffusion space 51, the processing gas is introduced from the processing gas supply mechanism 20 via the gas supply pipe 21. The gas diffusion space 51 communicates with the plural gas discharge holes 54, and the processing gas is discharged from the gas diffusion space 51 through the plural gas discharge holes 54.

在噴淋頭2之上方的天線容器3內，以面對於噴淋頭2之與腔室4側相反側之面之方式，配置高頻天線13。高頻天線13係由導電性材料，例如銅等構成，被配置成藉由由絕緣構件構成之間隔物(無圖示)從噴淋頭2間隔開，在與矩形狀之噴淋頭2對應之面內，被形成例如漩渦狀。再者，即使被形成環狀亦可，天線即使為一根亦可即使為複數根亦可。In the antenna container 3 above the shower head 2, the high-frequency antenna 13 is arranged so as to face the surface of the shower head 2 on the side opposite to the chamber 4 side. The high-frequency antenna 13 is made of a conductive material, such as copper, and is arranged to be separated from the shower head 2 by a spacer (not shown) made of an insulating member, and corresponds to the rectangular shower head 2 In the surface, it is formed into a spiral shape, for example. In addition, even if it is formed in a loop, there may be one antenna or a plurality of antennas.

在各高頻天線13，經由供電線16、匹配部17連接有第1高頻電源18。而且，在電漿處理之間，例如13.56MHz之高頻電力經由從第1高頻電源18延伸之供電線16而被供給至高頻天線13。依此，如後述般，經由被作為金屬窗發揮功能之噴淋頭2激起的循環電流，在腔室4內形成感應電場。而且，藉由該感應電場，在腔室4內之噴淋頭2正下方之電漿生成空間S，從噴淋頭2被供給之處理氣體被電漿化，生成感應耦合電漿。即是，高頻天線13及第1高頻電源18作為電漿生成機構而發揮功能。Each high-frequency antenna 13 is connected to a first high-frequency power source 18 via a power supply line 16 and a matching unit 17. In addition, during plasma processing, high-frequency power of, for example, 13.56 MHz is supplied to the high-frequency antenna 13 via the power supply line 16 extending from the first high-frequency power supply 18. Accordingly, as described later, an induced electric field is formed in the chamber 4 via the circulating current excited by the shower head 2 that functions as a metal window. Furthermore, by the induction electric field, the plasma generation space S directly below the shower head 2 in the chamber 4, the processing gas supplied from the shower head 2 is plasmatized to generate inductively coupled plasma. That is, the high-frequency antenna 13 and the first high-frequency power supply 18 function as plasma generating means.

在腔室4內之底部，以夾著噴淋頭2而與高頻天線13對向之方式，用以載置作為被處理基板的矩形狀之FPD用玻璃基板(以下單記載為基板)G的載置台23經由絕緣體構件24被固定。載置台23係由導電性材料，例如表面被陽極氧化處理之鋁所構成。被載置於載置台23之基板G係藉由靜電夾具(無圖式)被吸附保持。At the bottom of the chamber 4, a rectangular glass substrate for FPD (hereinafter referred to as a substrate) G as a substrate to be processed is placed facing the high-frequency antenna 13 while sandwiching the shower head 2 The mounting table 23 is fixed via an insulator member 24. The mounting table 23 is made of a conductive material, such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic clamp (not shown).

在載置台23之上部周緣部設置絕緣性之屏蔽環25a，在載置台23之周面設置有絕緣環25b。在載置台23，經本體容器1之底壁、絕緣體構件24被插通用以搬入搬出基板G之升降銷26。升降銷26係藉由被設置在本體容器1外之升降機構(無圖示)而升降驅動來進行基板G之搬入搬出。An insulating shield ring 25 a is provided on the upper peripheral edge of the mounting table 23, and an insulating ring 25 b is provided on the peripheral surface of the mounting table 23. In the mounting table 23, the lift pins 26 for carrying in and out the substrate G are inserted through the bottom wall of the main body container 1 and the insulator member 24. The lift pins 26 are driven up and down by a lift mechanism (not shown) provided outside the main body container 1 to carry in and out the substrate G.

本體容器1外，設置匹配器28及第2高頻電源29，在載置台23藉由供電線28a經由匹配器28連接有第2高頻電源29。該第2高頻電源29係在電漿處理中，對載置台23施加偏壓用之高頻電力，例如頻率為3.2MHz之高頻電力。藉由該偏壓用之高頻電力被生成的自偏壓，在腔室4內之電漿中之離子有效地被引入基板G。A matching device 28 and a second high-frequency power source 29 are provided outside the main body container 1, and the second high-frequency power source 29 is connected to the mounting table 23 via a power supply line 28 a via the matching device 28. The second high-frequency power source 29 applies high-frequency power for bias to the mounting table 23 during plasma processing, for example, high-frequency power with a frequency of 3.2 MHz. By the self-bias voltage generated by the high-frequency power for the bias voltage, the ions in the plasma in the chamber 4 are effectively introduced into the substrate G.

並且，在載置台23內設置有用以控制基板G之溫度，由加熱器等之加熱手段或冷媒流路等構成之溫度控制機構，和溫度感測器(任一者皆無圖式)。相對於該些機構或構件的配管或配線，皆通過被設置在本體容器1之底面及絕緣體構件24之開口部1b而被導出至本體容器1外。In addition, a temperature control mechanism composed of heating means such as a heater or a refrigerant flow path, etc., to control the temperature of the substrate G, and a temperature sensor are provided in the mounting table 23 (there is no drawing for any of them). The piping or wiring with respect to these mechanisms or components are all led out of the main container 1 through the bottom surface of the main container 1 and the opening 1b of the insulator member 24.

在腔室4之側壁4a，設置用以搬入搬出基板G之搬入搬出口27a，及開關此之閘閥27。再者，在腔室4之底部經排氣管31連接包含真空泵等之排氣裝置30。藉由該排氣裝置30，腔室4被排氣，在電漿處理中，腔室4內被設定、維持在特定之真空環境(例如1.33Pa)。The side wall 4a of the chamber 4 is provided with a loading and unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for opening and closing this. Furthermore, an exhaust device 30 including a vacuum pump or the like is connected to the bottom of the chamber 4 via an exhaust pipe 31. By the exhaust device 30, the chamber 4 is exhausted, and in the plasma processing, the inside of the chamber 4 is set and maintained in a specific vacuum environment (for example, 1.33 Pa).

在被載置於載置台23之基板G之背面側，形成有冷卻空間(無圖式)，設置有用以供給當作一定壓力之熱傳達用氣體之He氣體的He氣體流路41。如此一來，藉由將熱傳達用氣體供給至基板G之背面側，可以在真空下抑制基板G之電漿處理所致的溫度上升或溫度變化。On the back side of the substrate G placed on the mounting table 23, a cooling space (not shown) is formed, and a He gas flow path 41 for supplying He gas as a heat transfer gas at a certain pressure is provided. In this way, by supplying the heat transfer gas to the back side of the substrate G, it is possible to suppress temperature rise or temperature change due to the plasma processing of the substrate G under vacuum.

該感應耦合電漿處理裝置進一步具有控制部100。控制部100由電腦構成，具有由控制電漿處理裝置之各構成部的CPU構成的主控制部、輸入裝置、輸出裝置、顯示裝置和記憶裝置。在記憶裝置記憶在電漿處理裝置被實行之各種處理之參數，再者，設定儲存有用以控制在電漿處理裝置被實行的處理之程式，即是處理配方的記憶媒體。主控制部係以叫出被記憶於記憶媒體之特定處理配方，根據其處理配方使電漿處理裝置實行特定處理之方式進行控制。The inductively coupled plasma processing device further has a control unit 100. The control unit 100 is composed of a computer, and has a main control unit, an input device, an output device, a display device, and a memory device composed of a CPU that controls each component of the plasma processing device. The memory device stores the parameters of the various processes executed in the plasma processing device, and furthermore, the setting and storage are used to control the processing executed in the plasma processing device, which is the memory medium of the processing recipe. The main control unit is to call out the specific processing formula memorized in the memory medium, and control the plasma processing device according to the specific processing formula.

[噴淋頭] 接著，針對與一實施型態所涉及之噴淋頭2予以詳細說明。 感應耦合電漿藉由在高頻天線流通高頻電流，在其周圍產生磁場，利用藉由其磁場所激起的感應電場產生高頻放電，依此生成的電漿。使用一片金屬窗作為腔室4之天壁之情況，在被設置成在面內被圍繞在圓周方向的高頻天線13中，因渦電流及磁場不到達至金屬窗之背面側，即是腔室4側，故不生成電漿。因此，在本實施型態中，設為以藉由在高頻天線13流通的高頻電流產生的磁場及渦電流到達至腔室4側之方式，以絕緣構件7將作為金屬窗發揮功能之噴淋頭2分割成複數的構造。[Sprinkler] Next, the shower head 2 related to an embodiment will be described in detail. Inductively coupled plasma generates a magnetic field around a high-frequency antenna by passing a high-frequency current through the high-frequency antenna, and generates a high-frequency discharge using the induced electric field excited by the magnetic field, thereby generating the plasma. In the case of using a metal window as the sky wall of the chamber 4, in the high-frequency antenna 13 that is arranged in a plane to be surrounded in the circumferential direction, the eddy current and magnetic field do not reach the back side of the metal window, which is the cavity On the 4 side of the chamber, no plasma is generated. Therefore, in this embodiment, it is assumed that the magnetic field and eddy current generated by the high-frequency current flowing through the high-frequency antenna 13 reach the cavity 4 side, and the insulating member 7 will function as a metal window. The shower head 2 is divided into plural structures.

噴淋頭2之分割部50係基座構件52之基材及噴淋板53之基材由非磁性之金屬構成，至少基座構件52之基材由例如鋁(或含鋁合金)構成。基座構件52和噴淋板53之間被密封構件(在圖1中無圖示)密封。The dividing part 50 of the shower head 2 is the base material of the base member 52 and the base material of the shower plate 53 is made of non-magnetic metal, and at least the base member of the base member 52 is made of, for example, aluminum (or aluminum alloy containing). The base member 52 and the shower plate 53 are sealed by a sealing member (not shown in FIG. 1).

與噴淋頭2之處理氣體接觸的部分，即是分割部50之基座構件52之面對於氣體擴散空間51之部分，以及噴淋板53之面對於氣體擴散空間51及氣體吐出孔54之部分，被即使被具備即使與被導入至氣體擴散空間51之處理氣體接觸亦不腐蝕之程度之腐蝕性的耐蝕性金屬材或耐腐蝕性皮膜覆蓋。再者，密封構件係被設置成處理氣體不與基座構件52之基材及噴淋板53之基材直接接觸。 以下，針對噴淋頭2(分割部50)之幾個具體例予以說明。The part in contact with the processing gas of the shower head 2 is the part of the base member 52 of the dividing part 50 facing the gas diffusion space 51, and the surface of the shower plate 53 facing the gas diffusion space 51 and the gas discharge hole 54 The part is covered with a corrosion-resistant metal material or a corrosion-resistant film having a corrosion resistance to the extent that it does not corrode even if it comes into contact with the processing gas introduced into the gas diffusion space 51. Furthermore, the sealing member is set so that the processing gas does not directly contact the substrate of the base member 52 and the substrate of the shower plate 53. Hereinafter, a few specific examples of the shower head 2 (dividing part 50) will be described.

[第1例] 圖2為表示噴淋頭2(分割部50)之第1例的剖面圖。在本例中，基座構件52之基材61及噴淋板53之基材71皆為鋁製。作為鋁材以使用表面被陽極氧化處理者為佳。[First example] Fig. 2 is a cross-sectional view showing a first example of the shower head 2 (dividing part 50). In this example, the base material 61 of the base member 52 and the base material 71 of the shower plate 53 are both made of aluminum. As an aluminum material, it is better to use anodized surface.

基座構件52具有被設置成在面對於氣體擴散空間51之部分覆蓋基材61的由耐蝕性金屬構成的蓋構件62。蓋構件62構成沿著氣體擴散空間51之箱型形狀。作為構成蓋構件62之耐蝕性金屬，以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。The base member 52 has a cover member 62 made of a corrosion-resistant metal that is provided to cover the base 61 on a portion facing the gas diffusion space 51. The cover member 62 has a box shape along the gas diffusion space 51. As the corrosion-resistant metal constituting the cover member 62, nickel-containing metals such as stainless steel or nickel-based alloys such as Hester are preferred. Other corrosion-resistant metals such as titanium can also be used.

噴淋板53具有被設置在面對於氣體吐出孔54之部分的複數套筒72，和被設置在面對於氣體擴散空間51之部分的耐蝕性皮膜73，和被設置在面對於電漿生成空間S之部分的耐電漿性皮膜74。The shower plate 53 has a plurality of sleeves 72 provided on the portion facing the gas discharge hole 54, and a corrosion-resistant coating 73 provided on the portion facing the gas diffusion space 51, and provided on the surface facing the plasma generation space S part of the plasma resistant film 74.

套筒72被嵌入至基材71，規定氣體吐出孔54。套筒72由耐蝕性金屬或陶瓷構成。作為耐蝕性金屬，以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。作為陶瓷，可以使用氧化鋁、石英等。The sleeve 72 is fitted into the base 71 and defines the gas discharge hole 54. The sleeve 72 is made of corrosion-resistant metal or ceramic. As the corrosion-resistant metal, nickel-containing metals such as stainless steel or Ni-based alloys such as Hester are preferred. Other corrosion-resistant metals such as titanium can also be used. As ceramics, alumina, quartz, etc. can be used.

氣體吐出孔54具有氣體擴散空間51側之大直徑部，和電漿生成空間S側之小直徑部。使電漿生成空間S側成為小直徑部，係防止電漿從電漿生成空間S進入至氣體吐出孔54的深處之故。The gas ejection hole 54 has a large diameter portion on the gas diffusion space 51 side and a small diameter portion on the plasma generation space S side. Making the plasma generation space S side a small diameter part prevents the plasma from entering the plasma generation space S to the depth of the gas discharge hole 54.

耐蝕性皮膜73係由相對於處理氣體具有耐蝕性之材料構成。作為耐蝕性皮膜73，以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳，以氧化鋁(Al2 O3 )熔射皮膜為特佳。作為溶射皮膜，使用浸漬材浸漬者為更佳，作為浸漬材，使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。The corrosion-resistant film 73 is made of a material having corrosion resistance to the processing gas. As the corrosion-resistant coating 73, a ceramic spray coating or a Teflon (registered trademark) coating is preferred, and an alumina (Al 2 O 3 ) spray coating is particularly preferred. As the spray coating, it is more preferable to use an impregnating material. As the impregnating material, synthetic resin such as acrylic resin, epoxy resin, or silicone resin is used.

耐電漿性皮膜74係相對於被生成在電漿空間S之處理氣體之電漿具有耐久性之材料構成。作為耐電漿性皮膜74，以陶瓷熔射皮膜為佳，以耐電漿性高的氧化釔(Y2 O3 )熔射皮膜或Y-Al-Si-O系混合熔射皮膜(氧化釔、氧化鋁及二氧化矽(或是氮化矽)之混合熔射皮膜等之含釔氧化物熔射皮膜為更佳。作為熔射皮膜，以使浸漬材浸漬者為更佳，作為浸漬材，使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。The plasma-resistant film 74 is made of a material having durability with respect to the plasma of the processing gas generated in the plasma space S. As the plasma resistant coating 74, ceramic spray coatings are preferred, and yttrium oxide (Y 2 O 3 ) spray coatings with high plasma resistance or Y-Al-Si-O series mixed spray coatings (yttrium oxide, oxide Aluminum and silicon dioxide (or silicon nitride) mixed thermal spray coatings such as yttrium oxide-containing thermal spray coatings are better. As a thermal spray coating, it is better to impregnate the impregnating material. As the impregnating material, use Synthetic resin such as acrylic resin, epoxy resin or silicone resin.

基座構件52之基材61和噴淋板53之基材71係以在氣體擴散空間51之外側接觸之方式藉由螺絲被固定，在其接觸部之內側，以密封兩者之間之方式設置有密封構件81。具有在蓋構件62之端部不接觸於噴淋板53之表面的狀態被彎曲的彎曲部62a，彎曲部62a係在以推壓環狀密封構件81之方式接觸的狀態下被設置。彎曲部62a之前端部接觸於基座構件52之表面。密封構件81藉由彎曲部62a被保持。再者，密封構件81接觸於耐蝕性皮膜73。依此，腐蝕性之處理氣體到達至基材61及基材71之氣體擴散空間51之外側部分被阻止。蓋構件62係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件62之間設置密封構件89，腐蝕性之處理氣體到達至基材61之情形被阻止。再者，蓋構件62在不接觸於噴淋板53之表面而設置有間隙之狀態下被彎曲。因此，可以抑制在噴淋頭2激起循環電流之時，可以在蓋構件62和基材71之間發生局部放電。並且，抑制由於熱膨脹差等導致蓋構件62和噴淋板53之摩擦引起的微粒產生。The base material 61 of the base member 52 and the base material 71 of the shower plate 53 are fixed by screws so as to be in contact with the outside of the gas diffusion space 51, and the inside of the contact part is sealed to seal between the two A sealing member 81 is provided. It has a bent portion 62a that is bent in a state where the end of the cover member 62 is not in contact with the surface of the shower plate 53, and the bent portion 62a is provided in a state of being in contact with the annular sealing member 81 being pressed. The front end of the bent portion 62 a contacts the surface of the base member 52. The sealing member 81 is held by the bent portion 62a. Furthermore, the sealing member 81 is in contact with the corrosion-resistant film 73. Accordingly, the corrosive processing gas is prevented from reaching the outer part of the gas diffusion space 51 of the substrate 61 and the substrate 71. The cover member 62 is attached to the base 61 by the attachment member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 62 to prevent the corrosive processing gas from reaching the base material 61. Furthermore, the cover member 62 is bent in a state where a gap is provided without contacting the surface of the shower plate 53. Therefore, it is possible to suppress the occurrence of partial discharge between the cover member 62 and the base material 71 when the shower head 2 excites a circulating current. In addition, the generation of particles due to friction between the cover member 62 and the shower plate 53 due to the difference in thermal expansion or the like is suppressed.

如此一來，可以以比較簡易的構成，使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋，不會使既有的噴淋頭2之構造有太大變化，而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者，由於藉由密封構件81被密封，可以有效果地抑制腐蝕性之處理氣體到達至基座構件52之基材61及噴淋板53之基材71。並且，因密封構件81使用相對於腐蝕性之處理氣體具有耐蝕性之氟橡膠等，故密封構件81之腐蝕也被抑制。In this way, it is possible to use a relatively simple structure, so that the gas-contacting parts of the gas diffusion space 51 and the gas discharge hole 54 are all covered by the corrosion-resistant material, and the structure of the existing shower head 2 will not be greatly changed. , And can effectively inhibit the corrosion of the shower head 2 with respect to the corrosive processing gas. Furthermore, since it is sealed by the sealing member 81, it is possible to effectively prevent the corrosive processing gas from reaching the base material 61 of the base member 52 and the base material 71 of the shower plate 53. In addition, since the sealing member 81 uses fluororubber or the like having corrosion resistance to corrosive processing gas, corrosion of the sealing member 81 is also suppressed.

[第2例] 圖3為表示噴淋頭2(分割部50)之第2例的剖面圖。在本例中，基本構造與第1例相同。在本例中，密封構件81非蓋構件62，以構成環狀之耐蝕性固定構件83被保持、固定之點與第1例不同。耐蝕性固定構件83係由PTFE (polytetrafluoroethylene)般之絕緣性之耐蝕性樹脂構成，藉由固定構件84被固定。固定構件84係藉由安裝構件82與蓋構件62一起被安裝於基材61。在安裝構件82和蓋構件62之間設置密封構件89，腐蝕性之處理氣體到達至基材61之情形被阻止。再者，即使在本例中，密封構件81接觸於蓋構件62及耐蝕性皮膜73。因此，本例也可以取得與第1例相同的效果。再者，因以由絕緣性之耐蝕性樹脂構成之耐蝕性固定構件83保持設置在基座構件52和噴淋板53之間的密封構件81，故可以防止在耐蝕性固定構件83和噴淋板53之間產生放電之情形。[Example 2] Fig. 3 is a cross-sectional view showing a second example of the shower head 2 (dividing part 50). In this example, the basic structure is the same as the first example. In this example, the sealing member 81 is different from the first example in that the sealing member 81 is not the cover member 62 but is held and fixed by the corrosion-resistant fixing member 83 constituting the ring shape. The corrosion-resistant fixing member 83 is made of PTFE (polytetrafluoroethylene)-like insulating corrosion-resistant resin, and is fixed by the fixing member 84. The fixing member 84 is mounted to the base 61 by the mounting member 82 together with the cover member 62. A sealing member 89 is provided between the mounting member 82 and the cover member 62 to prevent the corrosive processing gas from reaching the base material 61. Furthermore, even in this example, the sealing member 81 is in contact with the cover member 62 and the corrosion-resistant film 73. Therefore, this example can also achieve the same effect as the first example. Furthermore, since the sealing member 81 provided between the base member 52 and the shower plate 53 is held by the corrosion-resistant fixing member 83 made of insulating and corrosion-resistant resin, it is possible to prevent the corrosion-resistant fixing member 83 and the shower A discharge occurs between the plates 53.

[第3例] 圖4為表示噴淋頭2(分割部50)之第3例的剖面圖。在本例中，噴淋板53與第1例相同，具有基材71、複數套筒72、耐蝕性皮膜73和耐電漿性皮膜74。[Example 3] Fig. 4 is a cross-sectional view showing a third example of the shower head 2 (dividing part 50). In this example, the shower plate 53 is the same as the first example, and has a base 71, a plurality of sleeves 72, a corrosion-resistant film 73, and a plasma-resistant film 74.

另外，基座構件52具有被形成覆蓋基材61之氣體擴散空間51上面側之面的耐蝕性皮膜63，和被設置成覆蓋基材61之氣體擴散空間51側面側之面的由耐蝕性金屬構成的環狀構件64。In addition, the base member 52 has a corrosion-resistant film 63 formed to cover the upper surface of the gas diffusion space 51 of the base 61, and a corrosion-resistant metal film 63 formed to cover the side surface of the gas diffusion space 51 of the base 61 Structured ring member 64.

作為耐蝕性皮膜63，與上述耐蝕性皮膜73相同，以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳，以氧化鋁熔射皮膜為特佳。作為熔射皮膜，使用使浸漬材浸漬者為更佳，作為浸漬材，使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。As the corrosion-resistant film 63, similar to the above-mentioned corrosion-resistant film 73, a ceramic spray film or a Teflon (registered trademark) coating is preferable, and an alumina spray film is particularly preferable. As the thermal spray film, it is more preferable to use the impregnating material, and as the impregnating material, synthetic resin such as acrylic resin, epoxy resin or silicone resin is used.

環狀構件64由耐蝕性金屬構成。作為耐蝕性金屬，以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。The ring member 64 is made of corrosion-resistant metal. As the corrosion-resistant metal, nickel-containing metals such as stainless steel or Ni-based alloys such as Hester are preferred. Other corrosion-resistant metals such as titanium can also be used.

在環狀構件64之上面及下面形成環狀溝，在該些溝，分別嵌入密封構件85及86。密封構件85及86分別成為被密接於形成有基座構件52之形成有耐蝕性皮膜63的面，及噴淋板53之形成有耐蝕性皮膜73的面。基座構件52之基材61和噴淋板53之基材71藉由螺絲固定被固定，基座構件52和環狀構件64之間，及環狀構件64和噴淋板53之間藉由密封構件85及86被密封。Ring-shaped grooves are formed on the upper and lower surfaces of the ring-shaped member 64, and the sealing members 85 and 86 are fitted into these grooves, respectively. The sealing members 85 and 86 are in close contact with the surface on which the base member 52 is formed on which the corrosion-resistant film 63 is formed, and the surface of the shower plate 53 on which the corrosion-resistant film 73 is formed, respectively. The base material 61 of the base member 52 and the base material 71 of the shower plate 53 are fixed by screws, between the base member 52 and the ring member 64, and between the ring member 64 and the shower plate 53 by The sealing members 85 and 86 are sealed.

如此一來，即使在本例中，亦可以以比較簡易的構成，使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋，不會使既有的噴淋頭2之構造有太大變化，而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者，因密封構件85及86密接於以耐蝕性金屬形成的環狀構件64、耐蝕性皮膜63、73，故腐蝕性之處理氣體從和環狀構件64之間隙到達至基材61及基材71之情形也被阻止。再者，因密封構件85及86使用相對於腐蝕性之處理氣體具有耐蝕性之氟橡膠等，故處理氣體所致的腐蝕也被抑制。In this way, even in this example, a relatively simple structure can be used so that the gas-contacting parts of the gas diffusion space 51 and the gas discharge hole 54 are all covered by the corrosion-resistant material, and the existing shower head The structure of 2 has too much change, and it can effectively inhibit the corrosion of the shower head 2 with respect to the corrosive processing gas. Furthermore, since the sealing members 85 and 86 are in close contact with the annular member 64 and the corrosion-resistant films 63 and 73 formed of a corrosion-resistant metal, the corrosive processing gas reaches the base 61 and the base from the gap with the annular member 64. The situation of material 71 was also prevented. Furthermore, since the sealing members 85 and 86 use fluororubber which has corrosion resistance with respect to the corrosive processing gas, the corrosion caused by the processing gas is also suppressed.

[第4例] 圖5為表示噴淋頭2(分割部50)之第4例的剖面圖。在本例中，雖然基本構造與第3例相同，但是在基材61之氣體擴散空間51上面側之面，設置與蓋構件62相同的由耐蝕性金屬構成之蓋構件65，以取代第3例之耐蝕性皮膜63之點不同。蓋構件65係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件65之間設置密封構件89，腐蝕性之處理氣體到達至基材61之情形被阻止。[Case 4] Fig. 5 is a cross-sectional view showing a fourth example of the shower head 2 (dividing part 50). In this example, although the basic structure is the same as that of the third example, a cover member 65 made of the same corrosion-resistant metal as the cover member 62 is provided on the upper surface of the gas diffusion space 51 of the base material 61 instead of the third example. The example of the corrosion-resistant film 63 is different. The cover member 65 is attached to the base 61 by the attachment member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 65 to prevent the corrosive processing gas from reaching the base material 61.

在本例中，與第3例略相同，面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋，可以取得與第3例相同的效果。In this example, similar to the third example, the gas-contacting parts of the gas diffusion space 51 and the gas discharge hole 54 are all covered with the corrosion-resistant material, and the same effect as the third example can be obtained.

[第5例] 圖6為表示噴淋頭2(分割部50)之第5例的剖面圖。在本例中，設置有第4例之蓋構件65和環狀構件64成為一體的一體構件66者，其他與第4例相同。一體構件66係與圖4之例相同，藉由安裝構件82被安裝於基材61。在安裝構件82和一體構件66之間設置密封構件89，腐蝕性之處理氣體到達至基材61之情形被阻止。[Example 5] Fig. 6 is a cross-sectional view showing a fifth example of the shower head 2 (dividing part 50). In this example, the cover member 65 and the ring member 64 of the fourth example are provided with an integral member 66 in which the cover member 65 and the ring member 64 are integrated, and the rest is the same as the fourth example. The integral member 66 is the same as the example in FIG. 4 and is mounted on the base 61 by the mounting member 82. A sealing member 89 is provided between the mounting member 82 and the integral member 66, and the corrosive processing gas reaching the base 61 is prevented.

因此，除了取得與第4例相同之效果之外，可以消除在第4例中存在的處理氣體從蓋構件65和環狀構件64之間隙露出至基座構件52之基材61側之虞。Therefore, in addition to obtaining the same effect as the fourth example, it is possible to eliminate the risk that the processing gas existing in the fourth example will be exposed to the base 61 side of the base member 52 from the gap between the cover member 65 and the ring member 64.

[第6例] 圖7為表示噴淋頭2(分割部50)之第6例的剖面圖。在本例中，噴淋板53與第1例相同，具有基材71、複數套筒72、耐蝕性皮膜73和耐電漿性皮膜74。[Case 6] Fig. 7 is a cross-sectional view showing a sixth example of the shower head 2 (dividing part 50). In this example, the shower plate 53 is the same as the first example, and has a base 71, a plurality of sleeves 72, a corrosion-resistant film 73, and a plasma-resistant film 74.

另外，基座構件52在面對於基材61之氣體擴散空間51之部分的全面具有耐蝕性皮膜67。作為耐蝕性皮膜67，與上述耐蝕性皮膜73相同，以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳，以氧化鋁熔射皮膜為特佳。作為溶射皮膜，使用浸漬材浸漬者為更佳，作為浸漬材，使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。In addition, the base member 52 has a corrosion-resistant film 67 on the entire surface of the portion facing the gas diffusion space 51 of the base 61. As the corrosion-resistant film 67, similar to the above-mentioned corrosion-resistant film 73, a ceramic spray film or a Teflon (registered trademark) coating is preferable, and an alumina spray film is particularly preferable. As the spray coating, it is more preferable to use an impregnating material. As the impregnating material, synthetic resin such as acrylic resin, epoxy resin, or silicone resin is used.

再者，在基座構件52之基材61之下面的氣體擴散空間51之外側部分，形成有環狀溝52a。耐蝕性皮膜67係沿著基材61之下面延伸至氣體擴散空間51之外方，也被形成在環狀溝52a內。再者，噴淋板53之耐蝕性皮膜73沿著基材71之上面而延伸至與氣體擴散空間之外方的環狀溝52a對應的部分。Furthermore, an annular groove 52a is formed on the outer side of the gas diffusion space 51 below the base 61 of the base member 52. The corrosion-resistant film 67 extends along the bottom surface of the base material 61 to the outside of the gas diffusion space 51, and is also formed in the annular groove 52a. Furthermore, the corrosion-resistant film 73 of the shower plate 53 extends along the upper surface of the base material 71 to a portion corresponding to the annular groove 52a outside the gas diffusion space.

基座構件52之基材61和噴淋板53之基材71在環狀之密封構件87被插入至環狀溝52a內之狀態被螺絲固定。作為密封構件87，可以使用相對於腐蝕性處理氣體具有腐蝕性之氟橡膠等。The base material 61 of the base member 52 and the base material 71 of the shower plate 53 are fixed by screws with the annular sealing member 87 inserted into the annular groove 52a. As the sealing member 87, fluororubber or the like which is corrosive to corrosive processing gas can be used.

如此一來，即使在本例中，亦可以以比較簡易的構成，使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋，不會使既有的噴淋頭2之構造有太大變化，而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者，基座構件52和噴淋板53之接縫之部分，因密封構件87介於耐蝕性皮膜67及73之間，故可以更有效果地抑制腐蝕性之處理氣體所致的腐蝕。In this way, even in this example, a relatively simple structure can be used so that the gas-contacting parts of the gas diffusion space 51 and the gas discharge hole 54 are all covered by the corrosion-resistant material, and the existing shower head The structure of 2 has too much change, and it can effectively inhibit the corrosion of the shower head 2 with respect to the corrosive processing gas. Furthermore, since the sealing member 87 is interposed between the corrosion-resistant films 67 and 73 at the joint between the base member 52 and the shower plate 53, the corrosion caused by corrosive processing gas can be suppressed more effectively.

[第7例] 圖8為表示噴淋頭2(分割部50)之第7例的剖面圖。在本例中，基座構件52與第6例相同，在基材61之面對於氣體擴散空間51之部分的全面具有耐蝕性皮膜67。腐蝕性皮膜67係沿著基材61之下面延伸至氣體擴散空間51之外方。但是，在氣體擴散空間51之周緣部設置傾斜之點，及無形成環狀溝之點與第6例不同。[Example 7] Fig. 8 is a cross-sectional view showing a seventh example of the shower head 2 (dividing part 50). In this example, the base member 52 is the same as in the sixth example, and the surface of the base material 61 has a corrosion-resistant film 67 on the entire surface of the gas diffusion space 51. The corrosive film 67 extends along the bottom surface of the base material 61 to the outside of the gas diffusion space 51. However, the point where an inclination is provided at the peripheral edge of the gas diffusion space 51 and the point where the annular groove is not formed is different from the sixth example.

另外，噴淋板53具有由耐蝕性金屬構成之基材75，在面對於基材75之電漿生成空間S之部分，形成耐電漿性皮膜74。氣體吐出孔54直接被形成在基材75。基材75露出至氣體擴散空間51及氣體吐出孔54。作為構成基材75之耐蝕性金屬，以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。在較噴淋板53之上面之氣體擴散空間51更外側部分，形成環狀溝53a。另外，基座構件52之耐蝕性皮膜67往較環狀溝53a更外側延伸。In addition, the shower plate 53 has a base 75 made of a corrosion-resistant metal, and a plasma-resistant film 74 is formed on a portion facing the plasma generation space S of the base 75. The gas discharge hole 54 is directly formed in the base 75. The base material 75 is exposed to the gas diffusion space 51 and the gas discharge hole 54. As the corrosion-resistant metal constituting the base material 75, nickel-containing metals such as nickel-based alloys such as stainless steel or Hester. Other corrosion-resistant metals such as titanium can also be used. A ring-shaped groove 53a is formed at a portion outside the gas diffusion space 51 above the shower plate 53. In addition, the corrosion-resistant film 67 of the base member 52 extends to the outside of the annular groove 53a.

基座構件52之基材61和噴淋板53之基材75在環狀之密封構件88被插入至環狀溝53a內之狀態被螺絲固定。作為密封構件88，可以使用相對於腐蝕性處理氣體具有腐蝕性之氟橡膠等。The base material 61 of the base member 52 and the base material 75 of the shower plate 53 are fixed by screws in a state where the annular sealing member 88 is inserted into the annular groove 53a. As the sealing member 88, fluororubber or the like which is corrosive to corrosive processing gas can be used.

因基座構件52之體積大，故由於重量限制等，難使用不鏽鋼等之耐蝕性金屬，但是噴淋板53之體積小，故如本例般，能夠以不鏽鋼等之耐蝕性金屬構成除了耐電漿性皮膜74外的部分全體。Due to the large volume of the base member 52, it is difficult to use corrosion-resistant metals such as stainless steel due to weight restrictions. However, the size of the shower plate 53 is small, so it can be constructed of corrosion-resistant metals such as stainless steel as in this example. The whole part outside the serous coating 74.

如此一來，即使在本例中，亦可以以比較簡易的構成，使面對於氣體擴散空間51及氣體吐出孔54之接觸氣體部分全部被耐蝕性材料覆蓋，不會使既有的噴淋頭2之構造有太大變化，而可以有效地抑制噴淋頭2相對於腐蝕性之處理氣體的腐蝕。再者，基座構件52和噴淋板53之接縫之部分，藉由由耐蝕性皮膜67及耐蝕性金屬構成之基材75被密封，再者，因密封構件88介於該些之間，故可以更有效果地抑制腐蝕性之處理氣體所致的腐蝕。In this way, even in this example, a relatively simple structure can be used so that the gas-contacting parts of the gas diffusion space 51 and the gas discharge hole 54 are all covered by the corrosion-resistant material, and the existing shower head The structure of 2 has too much change, and it can effectively inhibit the corrosion of the shower head 2 with respect to the corrosive processing gas. Furthermore, the joint between the base member 52 and the shower plate 53 is sealed by the base material 75 composed of the corrosion-resistant film 67 and the corrosion-resistant metal. Furthermore, the sealing member 88 is interposed therebetween. , It can more effectively inhibit the corrosion caused by corrosive processing gas.

再者，藉由被設置在氣體擴散空間51之周緣部設置傾斜，故氣體擴散室51之側面成為緩和(以剖面看時為鈍角)，故例如藉由熔射形成耐蝕性皮膜67之時，可以形成熔射材粒子之附著密度高的緻密膜。In addition, the side surface of the gas diffusion chamber 51 becomes gentle (obtuse angle when viewed in cross section) by being installed in the peripheral portion of the gas diffusion space 51 and inclined. Therefore, for example, when the corrosion-resistant film 67 is formed by thermal spraying, It can form a dense film with high adhesion density of thermal spray particles.

[第8例] 圖9為表示噴淋頭2(分割部50)之第8例的剖面圖。在本例中，基本構造與第7例相同。在本例中，在基座構件52中，在面對於基材61之氣體擴散空間51之部分的全面，設置由耐蝕性金屬構成之蓋構件68，以取代耐蝕性皮膜67之點與第7例不同。作為耐蝕性金屬，以不鏽鋼或赫史特等之鎳基合金等、含鎳金屬為佳。亦可以使用鈦等之其他耐蝕性金屬。另外，蓋構件68係藉由安裝構件82被安裝於基材61。在安裝構件82和蓋構件68之間設置密封構件89，腐蝕性之處理氣體到達至基材61之情形被阻止。[Example 8] Fig. 9 is a cross-sectional view showing an eighth example of the shower head 2 (dividing part 50). In this example, the basic structure is the same as the seventh example. In this example, in the base member 52, a cover member 68 made of a corrosion-resistant metal is provided on the entire surface of the gas diffusion space 51 facing the base material 61, instead of the corrosion-resistant film 67 and the seventh Cases are different. As the corrosion-resistant metal, nickel-containing metals such as stainless steel or Ni-based alloys such as Hester are preferred. Other corrosion-resistant metals such as titanium can also be used. In addition, the cover member 68 is attached to the base 61 by the attachment member 82. A sealing member 89 is provided between the mounting member 82 and the cover member 68 to prevent the corrosive processing gas from reaching the base material 61.

在本例中，由於第7例之腐蝕性皮膜67僅置換成由耐蝕性金屬構成之蓋構件68，故可以取得與第7例相同的效果。In this example, since the corrosive film 67 of the seventh example is only replaced with the cover member 68 made of corrosion-resistant metal, the same effect as the seventh example can be obtained.

(電漿處理裝置之動作) 接著，針對使用如上述般所構成之感應耦合電漿處理裝置而對基板G施予電漿處理例如電漿蝕刻處理之時之處理動作予以說明。(Action of plasma processing device) Next, the processing operation when the substrate G is subjected to plasma processing such as plasma etching processing using the inductively coupled plasma processing apparatus configured as described above will be described.

首先，在使閘閥27成為開啟之狀態藉由搬運機構(無圖示)將形成有特定膜之基板G從搬入搬出口27a搬入至腔室4內，載置於載置台23之載置面。接著，藉由靜電夾具(無圖示)將基板G固定在載置台23上。而且，邊藉由排氣裝置30對腔室4內進行真空排氣，邊藉由壓力控制閥(無圖示)，將腔室4內維持在例如0.66～26.6Pa程度之壓力氛圍。在該狀態下，從處理氣體供給機構20經由氣體供給管21對具有金屬窗之功能的噴淋頭2供給處理氣體，使處理氣體從噴淋頭2噴淋狀地吐出至腔室4內。First, with the gate valve 27 in the open state, the substrate G on which the specific film is formed is carried into the chamber 4 from the carry-in and carry-out port 27a by a carrying mechanism (not shown), and is placed on the placing surface of the placing table 23. Next, the substrate G is fixed on the mounting table 23 by an electrostatic clamp (not shown). In addition, while the inside of the chamber 4 is evacuated by the exhaust device 30, a pressure control valve (not shown) is used to maintain the inside of the chamber 4 at a pressure atmosphere of, for example, about 0.66 to 26.6 Pa. In this state, the processing gas is supplied from the processing gas supply mechanism 20 via the gas supply pipe 21 to the shower head 2 having the function of a metal window, and the processing gas is sprayed from the shower head 2 into the chamber 4.

再者，此時在基板G之背面側之冷卻空間，為了迴避基板G之溫度上升或溫度變化，經He氣體流路41，供給當作熱傳達用氣體之He氣體。Furthermore, at this time, in the cooling space on the back side of the substrate G, in order to avoid temperature rise or temperature change of the substrate G, He gas, which is used as a heat transfer gas, is supplied through the He gas flow path 41.

接著，從第1高頻電源18對高頻天線13施加例如1MHz以上27MHz以下之高頻，依此，經由當作金屬窗發揮功能之噴淋頭2而在腔室4內生成均勻的感應電場。藉由如此所生成之感應電場，在腔室4內處理氣體電漿化，生成高密度之感應耦合電漿。藉由該電漿，對基板G，進行電漿蝕刻處理。Next, a high frequency of, for example, 1 MHz to 27 MHz is applied to the high frequency antenna 13 from the first high frequency power supply 18, and accordingly, a uniform induced electric field is generated in the chamber 4 via the shower head 2 that functions as a metal window . With the induced electric field generated in this way, the processing gas is plasmatized in the chamber 4 to generate high-density inductively coupled plasma. With this plasma, the substrate G is subjected to plasma etching treatment.

作為處理氣體，雖然自以往使用氟系或氯系之腐蝕性氣體，但是在最近，藉由處理裝置之高溫化等，處理氣體之腐蝕性更增加。判斷出在使用如此之高腐蝕性之處理氣體之情況，即使針對尤其較電漿空間S更上游部分之電漿化之前的階段之接觸部分，也必須進行充分的腐蝕對策。As the processing gas, fluorine-based or chlorine-based corrosive gas has been used from the past, but recently, the corrosiveness of the processing gas has increased due to the high temperature of the processing device. It is judged that in the case of using such a highly corrosive processing gas, sufficient corrosion countermeasures must be taken even for the contact part in the stage before the plasma formation of the part upstream of the plasma space S.

在專利文獻1中，針對在被供給處理氣體之噴淋頭2內部中之防止腐蝕對策並無記載。In Patent Document 1, there is no description of anti-corrosion measures in the shower head 2 to which the processing gas is supplied.

於是，在本實施型態中，以耐蝕性金屬材或耐蝕性皮膜覆蓋接觸於噴淋頭2(分割部50)之處理氣體的部分，即是基座構件52之面對於氣體擴散空間51之部分，以及噴淋板53之面對於氣體擴散空間51及氣體吐出孔54之部分。依此，可以以比較簡易的構成，抑制金屬製之噴淋頭之接觸氣體部分的腐蝕。Therefore, in this embodiment, the portion contacting the processing gas of the shower head 2 (divided portion 50) is covered with a corrosion-resistant metal material or a corrosion-resistant film, that is, the surface of the base member 52 facing the gas diffusion space 51 Part, and the part where the surface of the shower plate 53 faces the gas diffusion space 51 and the gas discharge hole 54. Accordingly, it is possible to suppress the corrosion of the gas-contacting part of the shower head made of metal with a relatively simple structure.

具體而言，如上述第1～第8例所示般，基座構件52之面對於氣體擴散空間51之部分，使用由不鏽鋼等之耐蝕性金屬構成之蓋構件62、陶瓷熔射皮膜般之耐蝕性皮膜63、67、由耐蝕性金屬構成之環狀構件64。再者，在噴淋板53之面對於氣體擴散空間51之部分設置耐蝕性皮膜73，在面對於氣體吐出孔54之部分，設置由耐蝕性金屬或陶瓷構成之套筒72， 或由耐蝕性金屬構成噴淋板53之基材71本身。依此，可以有效果地抑制噴淋頭2之高腐蝕性之處理氣體所致的腐蝕。Specifically, as shown in the first to eighth examples above, the surface of the base member 52 facing the gas diffusion space 51 uses a cover member 62 made of a corrosion-resistant metal such as stainless steel and a ceramic spray coating. The corrosion-resistant coatings 63, 67, and the annular member 64 made of corrosion-resistant metal. Furthermore, a corrosion-resistant film 73 is provided on the surface of the shower plate 53 facing the gas diffusion space 51, and a sleeve 72 made of corrosion-resistant metal or ceramic is provided on the portion facing the gas discharge hole 54, or a sleeve 72 made of corrosion-resistant metal or ceramic. The metal constitutes the base 71 of the shower plate 53 itself. Accordingly, the corrosion caused by the highly corrosive processing gas of the shower head 2 can be effectively suppressed.

再者，因在基座構件52之基材61及噴淋板53之基材71之間，被耐蝕性金屬或耐蝕性皮膜密封，並且被密封構件81、85、86、87、88密封，故處理氣體到達至有腐蝕性可能的金屬部之情形被阻止。Furthermore, since the base material 61 of the base member 52 and the base material 71 of the shower plate 53 are sealed by a corrosion-resistant metal or a corrosion-resistant film, and sealed by the sealing members 81, 85, 86, 87, 88, Therefore, the process gas reaching the potentially corrosive metal part is prevented.

作為耐蝕性皮膜，以陶瓷熔射皮膜或鐵氟龍(註冊商標)塗層為佳。尤其，在使用Cl2 氣體等之鹵系的高腐蝕性之處理氣體之情況，以氧化鋁熔射皮膜為佳。再者，熔射皮膜以浸漬材被浸漬者為佳。藉由使浸漬材浸漬，熔射皮膜之氣孔被封孔，可以更有效果地抑制高腐蝕性之處理氣體所致的腐蝕。作為浸漬材，可使用丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。該些樹脂藉由選擇硬化劑之材料作為主劑，可以使填充性或腐蝕性成為良好，可以更提升封孔所致的腐蝕抑制效果。As a corrosion-resistant coating, ceramic spray coating or Teflon (registered trademark) coating is preferred. In particular, in the case of using a halogen-based highly corrosive processing gas such as Cl 2 gas, the aluminum oxide spray coating is preferred. Furthermore, it is better to use the impregnating material for the spray coating. By impregnating the impregnating material, the pores of the spray film are sealed, which can more effectively inhibit corrosion caused by highly corrosive processing gases. As the impregnating material, synthetic resins such as acrylic resin, epoxy resin, or silicone resin can be used. These resins, by selecting the hardener material as the main agent, can make the filling or corrosiveness good, and can further improve the corrosion inhibition effect caused by the sealing.

再者，因在噴淋板53之面對於電漿空間S之面，被相對於處理氣體之電漿具有耐電漿性之耐電漿性皮膜74覆蓋，故處理氣體對電漿之耐性高。作為耐電漿性皮膜74，以陶瓷熔射皮膜為佳，尤其氧化釔(Y2 O3 )熔射皮膜或Y-Al-Si-O系混合熔射皮膜(氧化釔、氧化鋁及二氧化矽(或是氮化矽)之混合熔射皮膜)等之含釔氧化物熔射皮膜為更佳，可以取得更高的耐電漿性。再者，從取得更高的耐電漿性之觀點來看，熔射皮膜以使浸漬材浸漬而予以封孔者為更佳。即使在此情況下，作為含浸材，可以使用使填充性或耐電漿性成為良好之丙烯酸樹脂、環氧樹脂或矽氧樹脂等之合成樹脂。 (其他之適用)Furthermore, since the surface of the shower plate 53 facing the plasma space S is covered by the plasma resistant film 74 having plasma resistance to the plasma of the processing gas, the plasma resistance of the processing gas is high. As the plasma resistant coating 74, ceramic spray coatings are preferred, especially yttrium oxide (Y 2 O 3 ) spray coatings or Y-Al-Si-O series mixed spray coatings (yttria, alumina and silicon dioxide) (Or silicon nitride, mixed spray film), etc., is better for yttrium-containing oxide spray film, which can achieve higher plasma resistance. Furthermore, from the viewpoint of obtaining higher plasma resistance, it is more preferable to seal the pores by impregnating the immersion material in the thermal spray coating. Even in this case, as the impregnating material, synthetic resins such as acrylic resins, epoxy resins, or silicone resins that make filling properties or plasma resistance good can be used. (Other applicable)

以上，雖然針對實施型態予以說明，但是應理解成此次揭示的實施型態所有的點皆為例示，並非用以限制者。上述實施型態在不脫離附件的申請專利範圍及其主旨的情況下，即使以各種型態進行省略、替換或變更亦可。Although the above description is directed to the implementation type, it should be understood that all points of the implementation type disclosed this time are exemplifications and not intended to limit. The above-mentioned embodiments may be omitted, replaced or changed in various forms without departing from the scope of the appended patent application and the spirit thereof.

例如，在上述實施型態中，雖然使用感應耦合電漿處理裝置之例，但是不限定於此，若基材為金屬之噴淋頭時，即使為電容耦合電漿處理裝置等之其他電漿處理裝置亦可，即使為不使用電漿之氣體處理亦可。再者，雖然以非磁性之金屬構成基座構件之基材及噴淋板之基材，但是若為感應耦合電漿處理裝置以外時，則不限定於非磁性金屬。For example, in the above embodiment, although an inductively coupled plasma processing device is used, it is not limited to this. If the substrate is a metal shower head, even if it is a capacitively coupled plasma processing device or other plasma processing device The processing device is also possible, even if it is a gas processing that does not use plasma. Furthermore, although the base material of the base member and the base material of the shower plate are made of non-magnetic metal, it is not limited to non-magnetic metal if it is other than the inductively coupled plasma processing device.

再者，在上述實施型態中，雖然以蝕刻裝置為例進行說明，但是不限定於此，若為灰化或CVD等之使用腐蝕性高的氣體的氣體處理裝置時則可以適用。In addition, in the above-mentioned embodiment, although an etching device is used as an example, it is not limited to this, and it can be applied to a gas processing device using a highly corrosive gas such as ashing or CVD.

1:本體容器 2:噴淋頭 3:天線容器 4:腔室 5:支撐棚架 6:支持樑 7:絕緣構件 13:高頻天線 18:第1高頻電源 20:處理氣體供給機構 50:分割部 51:氣體擴散空間 52:基座構件 53:噴淋板 54:氣體吐出孔 61:基材 62,65,68:蓋構件 66:一體構件 63,67:耐蝕性皮膜 64:環狀構件 71,75:基材 72:套筒 73:耐蝕性皮膜 74:耐電漿性皮膜 81,85,86,87,88,89:密封構件 G:基板1: body container 2: spray head 3: antenna container 4: chamber 5: Support scaffold 6: Support beam 7: Insulating member 13: high frequency antenna 18: The first high frequency power supply 20: Process gas supply mechanism 50: Division 51: Gas diffusion space 52: base member 53: spray board 54: Gas vent hole 61: Substrate 62, 65, 68: cover member 66: One piece 63, 67: Corrosion resistance film 64: Ring member 71, 75: substrate 72: sleeve 73: Corrosion resistance film 74: Plasma resistant film 81, 85, 86, 87, 88, 89: sealing member G: substrate

[圖1]為表示適用一實施型態所涉及之噴淋頭之電漿處理裝置之一例的剖面圖。 [圖2]為表示噴淋頭之第1例的剖面圖。 [圖3]為表示噴淋頭之第2例的剖面圖。 [圖4]為表示噴淋頭之第3例的剖面圖。 [圖5]為表示噴淋頭之第4例的剖面圖。 [圖6]為表示噴淋頭之第5例的剖面圖。 [圖7]為表示噴淋頭之第6例的剖面圖。 [圖8]為表示噴淋頭之第7例的剖面圖。 [圖9]為表示噴淋頭之第8例的剖面圖。[Fig. 1] is a cross-sectional view showing an example of a plasma processing apparatus to which a shower head according to an embodiment is applied. [Figure 2] is a cross-sectional view showing the first example of the shower head. [Fig. 3] is a cross-sectional view showing a second example of the shower head. [Fig. 4] is a cross-sectional view showing a third example of the shower head. [Figure 5] is a cross-sectional view showing a fourth example of the shower head. [Figure 6] is a cross-sectional view showing the fifth example of the shower head. [Fig. 7] is a cross-sectional view showing the sixth example of the shower head. [Figure 8] is a cross-sectional view showing a seventh example of the shower head. [Figure 9] is a cross-sectional view showing an eighth example of the shower head.

2:噴淋頭 2: spray head

50:分割部 50: Division

51:氣體擴散空間 51: Gas diffusion space

52:基座構件 52: base member

53:噴淋板 53: spray board

54:氣體吐出孔 54: Gas vent hole

61:基材 61: Substrate

62:蓋構件 62: cover member

62a:彎曲部 62a: Bend

71:基材 71: Substrate

72:套筒 72: sleeve

73:耐蝕性皮膜 73: Corrosion resistance film

74:耐電漿性皮膜 74: Plasma resistant film

81,89:密封構件 81, 89: Sealing member

82:安裝構件 82: Install components

S:電漿生成空間 S: Plasma generation space

Claims (19)

一種噴淋頭，其係在對基板施予氣體處理之氣體處理裝置中，對配置基板之腔室內，供給腐蝕性之處理氣體，該噴淋頭具備： 基座構件； 噴淋板，其係具有吐出處理氣體之複數氣體吐出孔； 氣體擴散空間，其係被設置在上述基座構件和上述噴淋板之間之一部分，導入上述處理氣體，與上述複數氣體吐出孔連通， 上述基座構件及上述噴淋板係基材由金屬構成， 上述基座構件之面對於上述氣體擴散空間的部分，以及上述噴淋板之面對於上述氣體擴散空間及上述氣體吐出孔之部分，被耐蝕性金屬材或耐蝕性皮膜覆蓋。A shower head, which is in a gas processing device for applying gas processing to a substrate, supplies corrosive processing gas to a chamber where the substrate is arranged, and the shower head has: Base member The spray plate has a plurality of gas discharge holes for discharging processing gas; A gas diffusion space is provided in a part between the base member and the shower plate, in which the processing gas is introduced and communicated with the plurality of gas discharge holes, The base member and the shower plate base material are made of metal, The portion of the surface of the base member facing the gas diffusion space, and the portion of the surface of the shower plate facing the gas diffusion space and the gas discharge hole are covered with a corrosion-resistant metal material or a corrosion-resistant film. 如請求項1所記載之噴淋頭，其中 上述耐蝕性金屬材由含鎳金屬構成。Such as the sprinkler head recorded in claim 1, where The aforementioned corrosion-resistant metal material is composed of a nickel-containing metal. 如請求項2所記載之噴淋頭，其中 上述含鎳金屬為不鏽鋼或鎳基合金。Such as the sprinkler head recorded in claim 2, where The above-mentioned nickel-containing metal is stainless steel or nickel-based alloy. 如請求項1或2所記載之噴淋頭，其中 上述耐蝕性皮膜為陶瓷熔射皮膜。Such as the sprinkler head described in claim 1 or 2, where The aforementioned corrosion-resistant coating is a ceramic spray coating. 如請求項4所記載之噴淋頭，其中 上述陶磁熔射皮膜為氧化鋁熔射皮膜。Such as the sprinkler head recorded in claim 4, where The ceramic spray coating film is an alumina spray coating film. 如請求項4或5所記載之噴淋頭，其中 上述陶瓷熔射皮膜係以由合成樹脂構成之封孔材被封孔。Such as the sprinkler head recorded in claim 4 or 5, where The ceramic spray coating is sealed with a sealing material made of synthetic resin. 如請求項1至6中之任一項所記載之噴淋頭，其中 上述基座構件具有以鋁或含鋁合金構成之基材，和以覆蓋上述基材之方式被設置在面對於上述氣體擴散空間之部分的作為上述耐蝕性金屬材而被構成的蓋構件。The sprinkler head described in any one of claims 1 to 6, wherein The base member has a base material made of aluminum or an aluminum alloy-containing alloy, and a cover member made of the corrosion-resistant metal material provided on a portion facing the gas diffusion space so as to cover the base material. 如請求項7所記載之噴淋頭，其中 上述基座構件及上述噴淋板之較上述氣體擴散空間更外側之部分接觸，以密封構件被密封之狀態下被固定，在上述蓋構件之端部，形成在不接觸於上述噴淋板之表面的狀態被彎曲的彎曲部，上述密封構件接觸於上述噴淋板之上述耐蝕性皮膜或耐蝕性材，並且藉由上述彎曲部被推壓之狀態被保持。Such as the sprinkler head recorded in claim 7, where The base member and the shower plate are in contact with the outside part of the gas diffusion space, and are fixed in a state where the sealing member is sealed. The end of the cover member is formed on the side that does not contact the shower plate. In the curved portion where the state of the surface is curved, the sealing member is in contact with the corrosion-resistant film or the corrosion-resistant material of the shower plate, and the state of being pressed by the curved portion is maintained. 如請求項7所記載之噴淋頭，其中 上述基座構件及上述噴淋板之較上述氣體擴散空間更外側之部分接觸，在以密封構件被密封之狀態被固定，上述密封構件接觸於上述蓋構件及上述噴淋板之上述耐蝕性皮膜或上述耐蝕性金屬材，並且藉由被設置在上述氣體擴散空間之端部的環狀耐蝕性樹脂被保持。Such as the sprinkler head recorded in claim 7, where The base member and the shower plate are in contact with the outer part of the gas diffusion space and are fixed in a sealed state with a sealing member, and the sealing member is in contact with the cover member and the corrosion-resistant film of the shower plate Or the above-mentioned corrosion-resistant metal material, and is held by a ring-shaped corrosion-resistant resin provided at the end of the gas diffusion space. 如請求項1至6中之任一項所記載之噴淋頭，其中 上述基座構件具有：由鋁或含鋁合金被構成，具有與上述氣體擴散空間對應之凹部的基材，和被形成覆蓋上述基材之上述氣體擴散空間之上面側之面的耐蝕性皮膜，和被設置成覆蓋上述基材之上述氣體擴散空間之側面側之面的由耐蝕性金屬構成的環狀構件。The sprinkler head described in any one of claims 1 to 6, wherein The base member includes a base material composed of aluminum or aluminum alloy containing recesses corresponding to the gas diffusion space, and a corrosion-resistant film formed to cover the upper surface of the gas diffusion space of the base material, And a ring-shaped member made of corrosion-resistant metal provided to cover the side surface of the gas diffusion space of the base material. 如請求項1至6中之任一項所記載之噴淋頭，其中 上述基座構件具有：由鋁或含鋁合金被構成，具有與上述氣體擴散空間對應之凹部的基材，和被形成覆蓋上述基材之上述氣體擴散空間之上面側之面的作為上述耐蝕性金屬材而被構成的蓋構件，和被設置成覆蓋上述基材之上述氣體擴散空間之側面側之面的由耐蝕性金屬構成的環狀構件。The sprinkler head described in any one of claims 1 to 6, wherein The base member has: a base material composed of aluminum or an aluminum alloy containing recesses corresponding to the gas diffusion space, and a surface formed to cover the upper surface of the gas diffusion space of the base material as the corrosion resistance A cover member made of a metal material, and an annular member made of a corrosion-resistant metal provided to cover the side surface of the gas diffusion space of the base material. 如請求項11所記載之噴淋頭，其中 上述蓋構件和上述環狀構件被形成一體。Such as the sprinkler head recorded in claim 11, where The cover member and the ring member are integrated. 如請求項10至12中之任一項所記載之噴淋頭，其中 進一步具有被設置在上述環狀構件和上述基座構件之間，以及上述環狀構件和上述噴淋板之間的密封構件。The sprinkler head described in any one of claims 10 to 12, wherein It further has a sealing member provided between the ring member and the base member, and between the ring member and the shower plate. 如請求項1至6中之任一項所記載之噴淋頭，其中 上述基座構件之面對於上述氣體擴散空間的部分被耐蝕性皮膜覆蓋， 上述噴淋板之面對於上述氣體擴散空間的部分被耐蝕性皮膜覆蓋， 上述基座構件側之上述耐蝕性皮膜，和上述噴淋板側之耐蝕性皮膜，延伸至較上述氣體擴散空間更外側之部分，成為該些彼此不接觸的狀態，在較上述氣體擴散空間更外側之部分，具有被形成在上述基座構件側之上述耐蝕性皮膜和上述噴淋板側之耐蝕性皮膜之間的密封構件。The sprinkler head described in any one of claims 1 to 6, wherein The surface of the base member facing the gas diffusion space is covered with a corrosion-resistant film, The surface of the shower plate facing the gas diffusion space is covered with a corrosion-resistant film, The corrosion-resistant film on the side of the base member and the corrosion-resistant film on the shower plate side extend to a portion outside of the gas diffusion space, and these are not in contact with each other. The outer part has a sealing member formed between the corrosion-resistant coating on the side of the base member and the corrosion-resistant coating on the side of the shower plate. 如請求項1至14中之任一項所記載之噴淋頭，其中 上述噴淋板具有由鋁或含鋁合金構成的基材，和被設置成在面對於上述氣體擴散空間之部分覆蓋上述基材之耐蝕性皮膜，和被嵌入至上述基材，被設置成覆蓋上述複數氣體吐出孔的複數套筒。The sprinkler head described in any one of claims 1 to 14, wherein The shower plate has a base material made of aluminum or aluminum alloy, and a corrosion-resistant film provided to cover the base material on the part facing the gas diffusion space, and is embedded in the base material, so as to cover The plural sleeves of the plural gas discharge holes. 如請求項1至6中之任一項所記載之噴淋頭，其中 上述噴淋板具有由耐蝕性金屬材構成之基材，上述基材露出至上述氣體擴散空間及上述氣體吐出孔。The sprinkler head described in any one of claims 1 to 6, wherein The shower plate has a base material made of a corrosion-resistant metal material, and the base material is exposed to the gas diffusion space and the gas discharge hole. 如請求項16所記載之噴淋頭，其中 上述基座構件具有由鋁或含鋁合金構成的基材，和被設置成在面對於上述氣體擴散空間之部分覆蓋上述基材的作為上述耐蝕性金屬材被構成的蓋構件或耐蝕性皮膜，上述蓋構件或上述耐蝕性皮膜延伸至較上述氣體擴散空間更外側，密封構件介於較上述噴淋板之上述基材，和較上述氣體擴散空間更外側部分的上述蓋構件或上述耐蝕性皮膜之間。Such as the sprinkler head recorded in claim 16, where The base member has a base material made of aluminum or an aluminum alloy-containing alloy, and a cover member or a corrosion-resistant film formed as the corrosion-resistant metal material provided to cover the base material on a portion facing the gas diffusion space, The cover member or the corrosion-resistant film extends to the outside of the gas diffusion space, and the sealing member is interposed between the base material of the shower plate and the cover member or the corrosion-resistant film at a portion outside the gas diffusion space between. 如請求項1至17中之任一項所記載之噴淋頭，其中 上述氣體處理裝置係在上述腔室內生成處理氣體之電漿而進行電漿處理之電漿處理裝置，上述噴淋板具有被形成在上述電漿接觸之面的耐電漿性皮膜。The sprinkler head described in any one of claims 1 to 17, wherein The gas processing device is a plasma processing device that generates plasma of processing gas in the chamber to perform plasma processing, and the shower plate has a plasma resistant coating formed on a surface in contact with the plasma. 一種氣體處理裝置，係用以對基板施予氣體處理，該氣體處理裝置之特徵為，具備： 腔室，用以收容基板； 載置台，其係在上述腔室內載置基板；及 如請求項1至請求項18中之任一項所記載之噴淋頭，其係在上述腔室內，被設置成與上述載置台相向，對上述腔室內供給用以生成電漿之腐蝕性的處理氣體。A gas processing device is used to apply gas processing to a substrate. The gas processing device is characterized by having: The chamber is used to contain the substrate; A mounting table for mounting a substrate in the above-mentioned chamber; and The sprinkler head described in any one of claim 1 to claim 18, which is installed in the above-mentioned chamber, is arranged opposite to the above-mentioned mounting table, and supplies corrosive materials for generating plasma to the above-mentioned chamber Process gas.
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Family Cites Families (14)

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US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
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JP2008010579A (en) * 2006-06-28 2008-01-17 Renesas Technology Corp Semiconductor device manufacturing apparatus
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JP5782293B2 (en) * 2011-05-10 2015-09-24 東京エレクトロン株式会社 Plasma generating electrode and plasma processing apparatus
CN103524044A (en) * 2012-07-05 2014-01-22 周业投资股份有限公司 Top electrode of reaction tank device for etching equipment
JP2014157944A (en) 2013-02-15 2014-08-28 Toshiba Corp Gas supply member and plasma processing apparatus
JP6228400B2 (en) * 2013-07-16 2017-11-08 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
JP2016225018A (en) 2015-05-27 2016-12-28 東京エレクトロン株式会社 Gas processing device and multi-division shower head used for the same
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