TWI376031B - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- TWI376031B TWI376031B TW094132331A TW94132331A TWI376031B TW I376031 B TWI376031 B TW I376031B TW 094132331 A TW094132331 A TW 094132331A TW 94132331 A TW94132331 A TW 94132331A TW I376031 B TWI376031 B TW I376031B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- thin film
- peeling layer
- peeling
- integrated circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 375
- 239000010409 thin film Substances 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 126
- 239000010408 film Substances 0.000 claims description 108
- 238000005530 etching Methods 0.000 claims description 44
- 239000011241 protective layer Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 36
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 229910052736 halogen Inorganic materials 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 19
- 150000002367 halogens Chemical class 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 15
- 239000013039 cover film Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000007789 gas Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 229920003002 synthetic resin Polymers 0.000 description 10
- 239000000057 synthetic resin Substances 0.000 description 10
- 238000003475 lamination Methods 0.000 description 9
- -1 halogen fluoride Chemical class 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000005001 laminate film Substances 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
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- 238000007650 screen-printing Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229920006358 Fluon Polymers 0.000 description 2
- 229920006169 Perfluoroelastomer Polymers 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004273426A JP4801337B2 (ja) | 2004-09-21 | 2004-09-21 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200623400A TW200623400A (en) | 2006-07-01 |
| TWI376031B true TWI376031B (en) | 2012-11-01 |
Family
ID=36074573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094132331A TWI376031B (en) | 2004-09-21 | 2005-09-19 | Method for manufacturing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7354801B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4801337B2 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI376031B (cg-RX-API-DMAC7.html) |
Families Citing this family (132)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7927971B2 (en) * | 2004-07-30 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8101990B2 (en) * | 2005-05-31 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7605056B2 (en) * | 2005-05-31 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including separation by physical force |
| US7504317B2 (en) * | 2005-12-02 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP2008003577A (ja) * | 2006-05-25 | 2008-01-10 | Canon Inc | 画像表示装置の製造方法および分断方法 |
| WO2007141836A1 (ja) * | 2006-06-02 | 2007-12-13 | Hitachi, Ltd. | Ｉｃタグ用インレットの製造方法 |
| JP5204959B2 (ja) * | 2006-06-26 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7456498B2 (en) * | 2006-08-18 | 2008-11-25 | Lsi Logic Corporation | Integrated circuit package and system interface |
| DE102007043526B4 (de) * | 2007-09-12 | 2020-10-08 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Vielzahl von Chips und entsprechend hergestellter Chip |
| USD645029S1 (en) * | 2008-05-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Antenna |
| USD602922S1 (en) * | 2008-05-09 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Contactless data carrier |
| USD605642S1 (en) * | 2008-09-10 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Contactless data carrier |
| JP5586920B2 (ja) * | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| KR101046064B1 (ko) * | 2008-12-11 | 2011-07-01 | 삼성전기주식회사 | 박막소자 제조방법 |
| ES2416254B1 (es) | 2009-02-09 | 2014-12-29 | Semprius, Inc. | Módulos fotovoltaicos de tipo concentrador (cpv), receptores y sub-receptores y métodos para formar los mismos |
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| JP3512496B2 (ja) * | 1994-11-25 | 2004-03-29 | 株式会社半導体エネルギー研究所 | Ｓｏｉ型半導体集積回路の作製方法 |
| JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3406727B2 (ja) | 1995-03-10 | 2003-05-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US5757456A (en) | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
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| JP4211256B2 (ja) * | 2001-12-28 | 2009-01-21 | セイコーエプソン株式会社 | 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器 |
| WO2003060986A2 (en) * | 2002-01-11 | 2003-07-24 | The Pennsylvania State University | Method of forming a removable support with a sacrificial layers and of transferring devices |
| JP4223258B2 (ja) * | 2002-09-30 | 2009-02-12 | 株式会社半導体エネルギー研究所 | 半導体表示装置の受注方法 |
| US6777309B1 (en) * | 2003-01-28 | 2004-08-17 | Gem Line Technology Co., Ltd. | Method for fabricating thin film transistor display device |
| US7241666B2 (en) * | 2003-10-28 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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| US7354801B2 (en) | 2008-04-08 |
| JP4801337B2 (ja) | 2011-10-26 |
| TW200623400A (en) | 2006-07-01 |
| US20060063309A1 (en) | 2006-03-23 |
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