TWI374931B - Compositions and methods for polishing silicon nitride materials - Google Patents

Compositions and methods for polishing silicon nitride materials Download PDF

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Publication number
TWI374931B
TWI374931B TW096120558A TW96120558A TWI374931B TW I374931 B TWI374931 B TW I374931B TW 096120558 A TW096120558 A TW 096120558A TW 96120558 A TW96120558 A TW 96120558A TW I374931 B TWI374931 B TW I374931B
Authority
TW
Taiwan
Prior art keywords
polishing
composition
acidic component
value
ppm
Prior art date
Application number
TW096120558A
Other languages
English (en)
Chinese (zh)
Other versions
TW200804579A (en
Inventor
Jeffrey Dysard
Sriram Anjur
Timothy Johns
Zhan Chen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200804579A publication Critical patent/TW200804579A/zh
Application granted granted Critical
Publication of TWI374931B publication Critical patent/TWI374931B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096120558A 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials TWI374931B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/448,205 US8759216B2 (en) 2006-06-07 2006-06-07 Compositions and methods for polishing silicon nitride materials

Publications (2)

Publication Number Publication Date
TW200804579A TW200804579A (en) 2008-01-16
TWI374931B true TWI374931B (en) 2012-10-21

Family

ID=38832072

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120558A TWI374931B (en) 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials

Country Status (10)

Country Link
US (1) US8759216B2 (enExample)
EP (1) EP2035523B1 (enExample)
JP (1) JP5313885B2 (enExample)
KR (1) KR101268128B1 (enExample)
CN (1) CN101490201B (enExample)
IL (1) IL195698A (enExample)
MY (1) MY150866A (enExample)
SG (1) SG172674A1 (enExample)
TW (1) TWI374931B (enExample)
WO (1) WO2007146065A1 (enExample)

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TWI877406B (zh) 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法

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Also Published As

Publication number Publication date
US20070298612A1 (en) 2007-12-27
EP2035523A1 (en) 2009-03-18
SG172674A1 (en) 2011-07-28
JP2009540575A (ja) 2009-11-19
JP5313885B2 (ja) 2013-10-09
WO2007146065A1 (en) 2007-12-21
TW200804579A (en) 2008-01-16
EP2035523B1 (en) 2017-09-13
CN101490201A (zh) 2009-07-22
CN101490201B (zh) 2013-01-16
US8759216B2 (en) 2014-06-24
IL195698A0 (en) 2009-09-01
KR20090020677A (ko) 2009-02-26
IL195698A (en) 2014-08-31
EP2035523A4 (en) 2011-12-21
KR101268128B1 (ko) 2013-05-31
MY150866A (en) 2014-03-14

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