TWI374931B - Compositions and methods for polishing silicon nitride materials - Google Patents

Compositions and methods for polishing silicon nitride materials Download PDF

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Publication number
TWI374931B
TWI374931B TW096120558A TW96120558A TWI374931B TW I374931 B TWI374931 B TW I374931B TW 096120558 A TW096120558 A TW 096120558A TW 96120558 A TW96120558 A TW 96120558A TW I374931 B TWI374931 B TW I374931B
Authority
TW
Taiwan
Prior art keywords
polishing
composition
acidic component
value
ppm
Prior art date
Application number
TW096120558A
Other languages
English (en)
Chinese (zh)
Other versions
TW200804579A (en
Inventor
Jeffrey Dysard
Sriram Anjur
Timothy Johns
Zhan Chen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200804579A publication Critical patent/TW200804579A/zh
Application granted granted Critical
Publication of TWI374931B publication Critical patent/TWI374931B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096120558A 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials TWI374931B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/448,205 US8759216B2 (en) 2006-06-07 2006-06-07 Compositions and methods for polishing silicon nitride materials

Publications (2)

Publication Number Publication Date
TW200804579A TW200804579A (en) 2008-01-16
TWI374931B true TWI374931B (en) 2012-10-21

Family

ID=38832072

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120558A TWI374931B (en) 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials

Country Status (10)

Country Link
US (1) US8759216B2 (enExample)
EP (1) EP2035523B1 (enExample)
JP (1) JP5313885B2 (enExample)
KR (1) KR101268128B1 (enExample)
CN (1) CN101490201B (enExample)
IL (1) IL195698A (enExample)
MY (1) MY150866A (enExample)
SG (1) SG172674A1 (enExample)
TW (1) TWI374931B (enExample)
WO (1) WO2007146065A1 (enExample)

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US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
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KR20200102492A (ko) 2018-03-23 2020-08-31 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
JP7002635B2 (ja) 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN111283556A (zh) * 2020-03-22 2020-06-16 浙江宇达新材料有限公司 一种金属材料表面处理工艺
TWI877406B (zh) 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法
KR20250008528A (ko) 2022-05-13 2025-01-14 엔테그리스, 아이엔씨. 질화규소 에칭 조성물 및 방법

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Also Published As

Publication number Publication date
JP5313885B2 (ja) 2013-10-09
TW200804579A (en) 2008-01-16
US8759216B2 (en) 2014-06-24
IL195698A (en) 2014-08-31
EP2035523A1 (en) 2009-03-18
KR101268128B1 (ko) 2013-05-31
IL195698A0 (en) 2009-09-01
US20070298612A1 (en) 2007-12-27
JP2009540575A (ja) 2009-11-19
CN101490201A (zh) 2009-07-22
EP2035523B1 (en) 2017-09-13
KR20090020677A (ko) 2009-02-26
EP2035523A4 (en) 2011-12-21
SG172674A1 (en) 2011-07-28
MY150866A (en) 2014-03-14
WO2007146065A1 (en) 2007-12-21
CN101490201B (zh) 2013-01-16

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