IL195698A - Compositions and methods for polishing silicon nitride materials - Google Patents

Compositions and methods for polishing silicon nitride materials

Info

Publication number
IL195698A
IL195698A IL195698A IL19569808A IL195698A IL 195698 A IL195698 A IL 195698A IL 195698 A IL195698 A IL 195698A IL 19569808 A IL19569808 A IL 19569808A IL 195698 A IL195698 A IL 195698A
Authority
IL
Israel
Prior art keywords
polishing
pka
composition
acidic component
range
Prior art date
Application number
IL195698A
Other languages
English (en)
Hebrew (he)
Other versions
IL195698A0 (en
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of IL195698A0 publication Critical patent/IL195698A0/en
Publication of IL195698A publication Critical patent/IL195698A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL195698A 2006-06-07 2008-12-03 Compositions and methods for polishing silicon nitride materials IL195698A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/448,205 US8759216B2 (en) 2006-06-07 2006-06-07 Compositions and methods for polishing silicon nitride materials
PCT/US2007/013424 WO2007146065A1 (en) 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials

Publications (2)

Publication Number Publication Date
IL195698A0 IL195698A0 (en) 2009-09-01
IL195698A true IL195698A (en) 2014-08-31

Family

ID=38832072

Family Applications (1)

Application Number Title Priority Date Filing Date
IL195698A IL195698A (en) 2006-06-07 2008-12-03 Compositions and methods for polishing silicon nitride materials

Country Status (10)

Country Link
US (1) US8759216B2 (enExample)
EP (1) EP2035523B1 (enExample)
JP (1) JP5313885B2 (enExample)
KR (1) KR101268128B1 (enExample)
CN (1) CN101490201B (enExample)
IL (1) IL195698A (enExample)
MY (1) MY150866A (enExample)
SG (1) SG172674A1 (enExample)
TW (1) TWI374931B (enExample)
WO (1) WO2007146065A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
TWI486428B (zh) * 2008-10-20 2015-06-01 霓塔哈斯股份有限公司 A silicon nitride polishing composition, and a control method using the same
SG10201401549SA (en) 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
JP5601922B2 (ja) 2010-07-29 2014-10-08 富士フイルム株式会社 研磨液及び研磨方法
EP3333232B1 (en) 2012-05-10 2020-03-04 Versum Materials US, LLC Chemical mechanical polishing composition having chemical additives and methods for using
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
JP6107821B2 (ja) 2012-05-24 2017-04-05 新東工業株式会社 ショット処理方法
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US9058976B2 (en) * 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
SG11201610328YA (en) * 2014-06-25 2017-01-27 Cabot Microelectronics Corp Colloidal silica chemical-mechanical polishing composition
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
KR101628878B1 (ko) * 2015-09-25 2016-06-16 영창케미칼 주식회사 Cmp용 슬러리 조성물 및 이를 이용한 연마방법
US10584265B2 (en) 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US11186748B2 (en) 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
KR102723152B1 (ko) 2018-03-23 2024-10-29 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
KR20200102492A (ko) 2018-03-23 2020-08-31 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
JP7002635B2 (ja) 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN111283556A (zh) * 2020-03-22 2020-06-16 浙江宇达新材料有限公司 一种金属材料表面处理工艺
TWI877406B (zh) 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法
KR20250008528A (ko) 2022-05-13 2025-01-14 엔테그리스, 아이엔씨. 질화규소 에칭 조성물 및 방법

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6228727B1 (en) * 1999-09-27 2001-05-08 Chartered Semiconductor Manufacturing, Ltd. Method to form shallow trench isolations with rounded corners and reduced trench oxide recess
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
WO2001057150A1 (en) * 2000-02-02 2001-08-09 Rodel Holdings, Inc. Polishing composition
TWI296006B (enExample) * 2000-02-09 2008-04-21 Jsr Corp
US6524168B2 (en) * 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6521523B2 (en) * 2001-06-15 2003-02-18 Silicon Integrated Systems Corp. Method for forming selective protection layers on copper interconnects
KR100557600B1 (ko) * 2001-06-29 2006-03-10 주식회사 하이닉스반도체 나이트라이드 cmp용 슬러리
KR100704690B1 (ko) * 2001-10-31 2007-04-10 히다치 가세고교 가부시끼가이샤 연마액 및 연마방법
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
CN101037585B (zh) * 2002-04-30 2010-05-26 日立化成工业株式会社 研磨液及研磨方法
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
MY134679A (en) * 2002-12-26 2007-12-31 Kao Corp Polishing composition
KR100627510B1 (ko) * 2002-12-30 2006-09-22 주식회사 하이닉스반도체 나이트라이드용 ｃｍｐ 슬러리
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
TWI254741B (en) * 2003-02-05 2006-05-11 Kao Corp Polishing composition
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
JP4954462B2 (ja) * 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride

Also Published As

Publication number Publication date
JP5313885B2 (ja) 2013-10-09
TW200804579A (en) 2008-01-16
US8759216B2 (en) 2014-06-24
EP2035523A1 (en) 2009-03-18
KR101268128B1 (ko) 2013-05-31
IL195698A0 (en) 2009-09-01
US20070298612A1 (en) 2007-12-27
JP2009540575A (ja) 2009-11-19
CN101490201A (zh) 2009-07-22
EP2035523B1 (en) 2017-09-13
KR20090020677A (ko) 2009-02-26
EP2035523A4 (en) 2011-12-21
SG172674A1 (en) 2011-07-28
TWI374931B (en) 2012-10-21
MY150866A (en) 2014-03-14
WO2007146065A1 (en) 2007-12-21
CN101490201B (zh) 2013-01-16

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