TWI369722B - Multiple masks and method to produce different doped regions - Google Patents

Multiple masks and method to produce different doped regions

Info

Publication number
TWI369722B
TWI369722B TW094141996A TW94141996A TWI369722B TW I369722 B TWI369722 B TW I369722B TW 094141996 A TW094141996 A TW 094141996A TW 94141996 A TW94141996 A TW 94141996A TW I369722 B TWI369722 B TW I369722B
Authority
TW
Taiwan
Prior art keywords
doped regions
produce different
multiple masks
different doped
masks
Prior art date
Application number
TW094141996A
Other languages
English (en)
Other versions
TW200633027A (en
Inventor
Martin Schrems
Rainer Minixhofer
Martin Knaipp
Original Assignee
Austriamicrosystems Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag filed Critical Austriamicrosystems Ag
Publication of TW200633027A publication Critical patent/TW200633027A/zh
Application granted granted Critical
Publication of TWI369722B publication Critical patent/TWI369722B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroluminescent Light Sources (AREA)
TW094141996A 2004-12-03 2005-11-30 Multiple masks and method to produce different doped regions TWI369722B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004058412.5A DE102004058412B4 (de) 2004-12-03 2004-12-03 Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens

Publications (2)

Publication Number Publication Date
TW200633027A TW200633027A (en) 2006-09-16
TWI369722B true TWI369722B (en) 2012-08-01

Family

ID=35911142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141996A TWI369722B (en) 2004-12-03 2005-11-30 Multiple masks and method to produce different doped regions

Country Status (7)

Country Link
US (1) US7820342B2 (zh)
EP (1) EP1817792B1 (zh)
JP (1) JP5108524B2 (zh)
CN (1) CN100483630C (zh)
DE (1) DE102004058412B4 (zh)
TW (1) TWI369722B (zh)
WO (1) WO2006058594A2 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101927B2 (en) 2009-06-08 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Masking apparatus for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8912097B2 (en) * 2009-08-20 2014-12-16 Varian Semiconductor Equipment Associates, Inc. Method and system for patterning a substrate
JP5601849B2 (ja) 2010-02-09 2014-10-08 三菱電機株式会社 炭化珪素半導体装置の製造方法
US9077365B2 (en) 2010-10-15 2015-07-07 S.C. Johnson & Son, Inc. Application specific integrated circuit including a motion detection system
US8629026B2 (en) * 2010-11-12 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Source tip optimization for high voltage transistor devices
US9190548B2 (en) * 2011-10-11 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Method of creating two dimensional doping patterns in solar cells
US9299832B2 (en) * 2013-12-17 2016-03-29 Texas Instruments Incorporated High voltage lateral DMOS transistor with optimized source-side blocking capability
JP7331370B2 (ja) * 2019-02-01 2023-08-23 株式会社デンソー 半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648174A (en) * 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
US4668174A (en) * 1985-10-02 1987-05-26 Kern's Bakeries, Inc. Apparatus for dividing, rounding, and panning of doughballs
JPH06118622A (ja) * 1992-10-01 1994-04-28 Hitachi Ltd マスク及びそれを用いた半導体装置の製造方法
US5300454A (en) 1992-11-24 1994-04-05 Motorola, Inc. Method for forming doped regions within a semiconductor substrate
JPH07221041A (ja) 1994-01-28 1995-08-18 Sony Corp 半導体装置の製造方法
JPH07296764A (ja) 1994-04-27 1995-11-10 Hitachi Ltd イオン注入方法およびその装置
JP2748896B2 (ja) * 1995-08-14 1998-05-13 日本電気株式会社 半導体集積回路装置の製造方法
JPH0963983A (ja) * 1995-08-29 1997-03-07 Oki Electric Ind Co Ltd 不純物拡散領域の形成方法、拡散ｍｏｓトランジスタの製造方法、ダイオードの製造方法
JPH09293686A (ja) * 1996-04-26 1997-11-11 Matsushita Electric Works Ltd 半導体装置の製造方法
JPH11204543A (ja) 1998-01-12 1999-07-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
GB9826291D0 (en) * 1998-12-02 1999-01-20 Koninkl Philips Electronics Nv Field-effect semi-conductor devices
JP3988262B2 (ja) * 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
JP3178525B2 (ja) * 1999-02-05 2001-06-18 日本電気株式会社 抵抗素子を有する半導体装置及びその製造方法
JP4765012B2 (ja) 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
DE10052680C2 (de) * 2000-10-24 2002-10-24 Advanced Micro Devices Inc Verfahren zum Einstellen einer Form einer auf einem Substrat gebildeten Oxidschicht
TW548710B (en) * 2002-06-06 2003-08-21 Macronix Int Co Ltd Method for forming semiconductor hole and contact hole and implantation process
JP2004207571A (ja) * 2002-12-26 2004-07-22 Toshiba Corp 半導体装置の製造方法、半導体製造装置及びステンシルマスク
US6927153B2 (en) 2003-02-25 2005-08-09 Xerox Corporation Ion implantation with multiple concentration levels
DE10337808B3 (de) * 2003-08-14 2004-10-21 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Ladungskompensationsstruktur

Also Published As

Publication number Publication date
EP1817792B1 (de) 2016-07-27
CN101069269A (zh) 2007-11-07
DE102004058412B4 (de) 2017-03-02
US20090098718A1 (en) 2009-04-16
US7820342B2 (en) 2010-10-26
JP5108524B2 (ja) 2012-12-26
CN100483630C (zh) 2009-04-29
DE102004058412A1 (de) 2006-06-08
WO2006058594A2 (de) 2006-06-08
WO2006058594A3 (de) 2006-09-21
JP2008522420A (ja) 2008-06-26
TW200633027A (en) 2006-09-16
EP1817792A2 (de) 2007-08-15

Similar Documents

Publication Publication Date Title
HK1221289A1 (zh) 曝光裝置及元件製造方法
TWI369722B (en) Multiple masks and method to produce different doped regions
GB2439891B (en) Point to point link negotitation method and apparatus
EP1891750A4 (en) METHOD AND DEVICE FOR COMMUNICATIONS
HK1105687A1 (en) System and method for manufacturing
EP1738417A4 (en) PHOTOVOLTAIC SYSTEM AND MANUFACTURING METHOD THEREFOR
HK1104087A1 (en) Method and arrangements relating to satellite-based positioning
EP1860789A4 (en) COMMUNICATION DEVICE AND COMMUNICATION PROCESS
EP1866721A4 (en) INVARIANT BANDED REFERENCE REFERENCE CIRCUIT DURING THE MANUFACTURING PROCESS
EP1793434A4 (en) MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
EP1767491A4 (en) METHOD FOR PRODUCING NANOSTRUCTURE AND NANOSTRUCTURE
EP2013903A4 (en) STRESSOR INTEGRATION AND METHOD THEREFOR
EP1950992A4 (en) COMMUNICATION DEVICE AND METHOD
EP1843384A4 (en) EXPOSURE DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1853864A4 (en) CALCINATION SYSTEM AND METHOD
EP1855405A4 (en) COMMUNICATION DEVICE AND COMMUNICATION PROCESS
EP1967451A4 (en) DEVICE FOR PRODUCING PACKAGING CONTAINER AND PROCESS FOR PRODUCING PACKAGING CONTAINER
ZA200605722B (en) Composition and method
SG126872A1 (en) Method and structure for forming strained devices
EP1732043A4 (en) TRACING METHOD, TRACING PROGRAM, AND TRACING EQUIPMENT
GB2433376B (en) Communications system and method
GB0618865D0 (en) Anti-reflection layer and manufacturing method and apparatus
GB2431112B (en) Condom and production method thereof
HK1122370A1 (en) Method and system to automatically purge serial-use devices
GB0505354D0 (en) Inference method and apparatus

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees