TWI368946B - Semiconductor photodetector and manufacturing method thereof - Google Patents

Semiconductor photodetector and manufacturing method thereof

Info

Publication number
TWI368946B
TWI368946B TW097106584A TW97106584A TWI368946B TW I368946 B TWI368946 B TW I368946B TW 097106584 A TW097106584 A TW 097106584A TW 97106584 A TW97106584 A TW 97106584A TW I368946 B TWI368946 B TW I368946B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor photodetector
photodetector
semiconductor
Prior art date
Application number
TW097106584A
Other languages
English (en)
Other versions
TW200915433A (en
Inventor
Kikuchi Matobu
Nakajima Yasuo
Nakashima Yoshiyuki
Sakuma Hitoshi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200915433A publication Critical patent/TW200915433A/zh
Application granted granted Critical
Publication of TWI368946B publication Critical patent/TWI368946B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW097106584A 2007-09-18 2008-02-26 Semiconductor photodetector and manufacturing method thereof TWI368946B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007241061A JP5007636B2 (ja) 2007-09-18 2007-09-18 半導体受光素子の製造方法

Publications (2)

Publication Number Publication Date
TW200915433A TW200915433A (en) 2009-04-01
TWI368946B true TWI368946B (en) 2012-07-21

Family

ID=40380651

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106584A TWI368946B (en) 2007-09-18 2008-02-26 Semiconductor photodetector and manufacturing method thereof

Country Status (4)

Country Link
US (1) US8482096B2 (zh)
JP (1) JP5007636B2 (zh)
FR (1) FR2921202B1 (zh)
TW (1) TWI368946B (zh)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US897461A (en) * 1907-08-16 1908-09-01 Greenlaw Mfg Co Flexible pipe-joint.
US3846820A (en) * 1973-06-26 1974-11-05 Westinghouse Electric Corp Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array
JPS6043822A (ja) 1983-08-22 1985-03-08 Hitachi Ltd 電極形成方法
JPS6233425A (ja) 1985-08-07 1987-02-13 Agency Of Ind Science & Technol 電極の形成方法
JPS63160283A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 半導体受光素子
JPH01175776A (ja) * 1987-12-29 1989-07-12 Nec Corp 半導体受光素子
JP2703673B2 (ja) * 1991-05-17 1998-01-26 三菱電機株式会社 半導体装置
JPH05218212A (ja) 1992-01-31 1993-08-27 Mitsubishi Electric Corp 半導体装置の製造方法
JP2989956B2 (ja) 1992-03-27 1999-12-13 三菱電機株式会社 半導体装置の製造方法
JPH0897461A (ja) 1994-09-29 1996-04-12 Mitsubishi Electric Corp 半導体受光素子，及びその製造方法
JPH08213345A (ja) 1995-02-02 1996-08-20 Toshiba Electron Eng Corp 半導体装置及びその製造方法
JP3618258B2 (ja) 1999-07-26 2005-02-09 株式会社クボタ コイン精米設備
JP2001298211A (ja) 2000-04-17 2001-10-26 Nec Corp 半導体受光素子及びその製造方法

Also Published As

Publication number Publication date
JP2009071249A (ja) 2009-04-02
JP5007636B2 (ja) 2012-08-22
FR2921202B1 (fr) 2014-01-10
US8482096B2 (en) 2013-07-09
TW200915433A (en) 2009-04-01
FR2921202A1 (fr) 2009-03-20
US20090072338A1 (en) 2009-03-19

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