FR2921202B1 - Photodetecteur a semiconducteur et procede de fabrication pour celui-ci - Google Patents

Photodetecteur a semiconducteur et procede de fabrication pour celui-ci

Info

Publication number
FR2921202B1
FR2921202B1 FR0852971A FR0852971A FR2921202B1 FR 2921202 B1 FR2921202 B1 FR 2921202B1 FR 0852971 A FR0852971 A FR 0852971A FR 0852971 A FR0852971 A FR 0852971A FR 2921202 B1 FR2921202 B1 FR 2921202B1
Authority
FR
France
Prior art keywords
forming
electrode
power supply
supply layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0852971A
Other languages
English (en)
Other versions
FR2921202A1 (fr
Inventor
Matobu Kikuchi
Yasuo Nakajima
Yoshiyuki Nakashima
Hitoshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2921202A1 publication Critical patent/FR2921202A1/fr
Application granted granted Critical
Publication of FR2921202B1 publication Critical patent/FR2921202B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
FR0852971A 2007-09-18 2008-05-05 Photodetecteur a semiconducteur et procede de fabrication pour celui-ci Active FR2921202B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007241061A JP5007636B2 (ja) 2007-09-18 2007-09-18 半導体受光素子の製造方法

Publications (2)

Publication Number Publication Date
FR2921202A1 FR2921202A1 (fr) 2009-03-20
FR2921202B1 true FR2921202B1 (fr) 2014-01-10

Family

ID=40380651

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0852971A Active FR2921202B1 (fr) 2007-09-18 2008-05-05 Photodetecteur a semiconducteur et procede de fabrication pour celui-ci

Country Status (4)

Country Link
US (1) US8482096B2 (fr)
JP (1) JP5007636B2 (fr)
FR (1) FR2921202B1 (fr)
TW (1) TWI368946B (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US897461A (en) * 1907-08-16 1908-09-01 Greenlaw Mfg Co Flexible pipe-joint.
US3846820A (en) * 1973-06-26 1974-11-05 Westinghouse Electric Corp Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array
JPS6043822A (ja) 1983-08-22 1985-03-08 Hitachi Ltd 電極形成方法
JPS6233425A (ja) 1985-08-07 1987-02-13 Agency Of Ind Science & Technol 電極の形成方法
JPS63160283A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 半導体受光素子
JPH01175776A (ja) * 1987-12-29 1989-07-12 Nec Corp 半導体受光素子
JP2703673B2 (ja) * 1991-05-17 1998-01-26 三菱電機株式会社 半導体装置
JPH05218212A (ja) 1992-01-31 1993-08-27 Mitsubishi Electric Corp 半導体装置の製造方法
JP2989956B2 (ja) 1992-03-27 1999-12-13 三菱電機株式会社 半導体装置の製造方法
JPH0897461A (ja) 1994-09-29 1996-04-12 Mitsubishi Electric Corp 半導体受光素子，及びその製造方法
JPH08213345A (ja) 1995-02-02 1996-08-20 Toshiba Electron Eng Corp 半導体装置及びその製造方法
JP3618258B2 (ja) 1999-07-26 2005-02-09 株式会社クボタ コイン精米設備
JP2001298211A (ja) * 2000-04-17 2001-10-26 Nec Corp 半導体受光素子及びその製造方法

Also Published As

Publication number Publication date
US20090072338A1 (en) 2009-03-19
TW200915433A (en) 2009-04-01
FR2921202A1 (fr) 2009-03-20
JP2009071249A (ja) 2009-04-02
JP5007636B2 (ja) 2012-08-22
US8482096B2 (en) 2013-07-09
TWI368946B (en) 2012-07-21

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