TWI361831B - Onium-containing cmp compositions and methods of use thereof - Google Patents

Onium-containing cmp compositions and methods of use thereof Download PDF

Info

Publication number
TWI361831B
TWI361831B TW96133589A TW96133589A TWI361831B TW I361831 B TWI361831 B TW I361831B TW 96133589 A TW96133589 A TW 96133589A TW 96133589 A TW96133589 A TW 96133589A TW I361831 B TWI361831 B TW I361831B
Authority
TW
Taiwan
Prior art keywords
group
substituent
composition
cmp
polishing
Prior art date
Application number
TW96133589A
Other languages
English (en)
Chinese (zh)
Other versions
TW200821376A (en
Inventor
Michael White
Zhan Chen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39157555&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI361831(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200821376A publication Critical patent/TW200821376A/zh
Application granted granted Critical
Publication of TWI361831B publication Critical patent/TWI361831B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • H10P95/062
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW96133589A 2006-09-08 2007-09-07 Onium-containing cmp compositions and methods of use thereof TWI361831B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/517,909 US9129907B2 (en) 2006-09-08 2006-09-08 Onium-containing CMP compositions and methods of use thereof

Publications (2)

Publication Number Publication Date
TW200821376A TW200821376A (en) 2008-05-16
TWI361831B true TWI361831B (en) 2012-04-11

Family

ID=39157555

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96133589A TWI361831B (en) 2006-09-08 2007-09-07 Onium-containing cmp compositions and methods of use thereof

Country Status (9)

Country Link
US (1) US9129907B2 (enExample)
EP (1) EP2069452B1 (enExample)
JP (1) JP5385142B2 (enExample)
KR (1) KR101397856B1 (enExample)
CN (1) CN101511966B (enExample)
MY (1) MY154310A (enExample)
SG (1) SG174778A1 (enExample)
TW (1) TWI361831B (enExample)
WO (1) WO2008030576A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5452859B2 (ja) * 2007-11-05 2014-03-26 富士フイルム株式会社 金属研磨用組成物、及び金属研磨方法
EP2356192B1 (en) * 2008-09-19 2020-01-15 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
JP5493526B2 (ja) * 2009-07-14 2014-05-14 日立化成株式会社 Cmp用研磨液及び研磨方法
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
JPWO2014007063A1 (ja) * 2012-07-06 2016-06-02 日立化成株式会社 Cmp用研磨液、貯蔵液及び研磨方法
JP6631520B2 (ja) * 2014-07-09 2020-01-15 日立化成株式会社 Cmp用研磨液及び研磨方法
CN107922786B (zh) 2015-08-19 2023-02-03 费罗公司 浆料组合物和使用方法
JP6955014B2 (ja) * 2016-09-28 2021-10-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨
US12291655B2 (en) 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
US11274230B1 (en) 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
WO2025019194A2 (en) * 2023-07-14 2025-01-23 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528384A (en) * 1980-06-30 1985-07-09 The Dow Chemical Company Addition polymerizable aromatic sulfonium salts and polymers thereof
GB8504862D0 (en) * 1985-02-26 1985-03-27 Unilever Plc Liquid detergent composition
US5234493A (en) * 1988-11-08 1993-08-10 Rhone-Poulenc Chimie Stable, pumpable aqueous suspensions of precipitated silica particulates
US5393469A (en) * 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
US6046112A (en) * 1998-12-14 2000-04-04 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing slurry
JP3841995B2 (ja) * 1999-12-28 2006-11-08 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
DE10022649B4 (de) 2000-04-28 2008-06-19 Qimonda Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden
JP4507141B2 (ja) * 2000-05-22 2010-07-21 隆章 徳永 研磨用組成物、その製造方法およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Cmp用スラリーおよび半導体装置の製造方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
WO2005019364A1 (en) * 2003-08-14 2005-03-03 Ekc Technology, Inc. Periodic acid compositions for polishing ruthenium/high k substrates
US20050076580A1 (en) 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Also Published As

Publication number Publication date
EP2069452B1 (en) 2016-11-09
JP2010503233A (ja) 2010-01-28
JP5385142B2 (ja) 2014-01-08
MY154310A (en) 2015-05-29
US20080060278A1 (en) 2008-03-13
KR20090051269A (ko) 2009-05-21
EP2069452A1 (en) 2009-06-17
CN101511966A (zh) 2009-08-19
TW200821376A (en) 2008-05-16
SG174778A1 (en) 2011-10-28
EP2069452A4 (en) 2010-11-03
US9129907B2 (en) 2015-09-08
WO2008030576A1 (en) 2008-03-13
CN101511966B (zh) 2013-01-16
KR101397856B1 (ko) 2014-05-20

Similar Documents

Publication Publication Date Title
TWI361831B (en) Onium-containing cmp compositions and methods of use thereof
CN101437918B (zh) 用于半导体材料的化学机械抛光的组合物及方法
TWI414573B (zh) 半導體材料之cmp之組合物及方法
CN103492519B (zh) 用于选择性抛光氮化硅材料的组合物及方法
US9074118B2 (en) CMP method for metal-containing substrates
KR102165009B1 (ko) Gst cmp 슬러리
KR101173753B1 (ko) 구리-부동태화 cmp 조성물 및 방법
TWI596203B (zh) 用於抑制氮化鈦及鈦/氮化鈦移除之化學機械拋光(cmp)方法
TWI444458B (zh) 用於金屬移除速率控制之鹵化物陰離子
KR20230144107A (ko) 텅스텐 cmp용 조성물
TWI343406B (en) Halide anions for metal removal rate control
JP2017510977A (ja) 窒化チタン及びチタン/窒化チタン除去の抑制に関するcmp方法
JP5080261B2 (ja) 金属イオンコーティングcmp組成物及びその使用方法
CN106062931A (zh) 用于抑制氮化钛及钛/氮化钛移除的化学机械抛光方法