TWI358396B - Cover glass for semiconductor package - Google Patents
Cover glass for semiconductor package Download PDFInfo
- Publication number
- TWI358396B TWI358396B TW093103712A TW93103712A TWI358396B TW I358396 B TWI358396 B TW I358396B TW 093103712 A TW093103712 A TW 093103712A TW 93103712 A TW93103712 A TW 93103712A TW I358396 B TWI358396 B TW I358396B
- Authority
- TW
- Taiwan
- Prior art keywords
- glass
- glass cover
- semiconductor package
- less
- viscosity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 239000006059 cover glass Substances 0.000 title description 4
- 239000011521 glass Substances 0.000 claims description 189
- 238000000034 method Methods 0.000 claims description 20
- 230000003746 surface roughness Effects 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 230000005260 alpha ray Effects 0.000 claims description 13
- 239000003513 alkali Substances 0.000 claims description 11
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 238000007500 overflow downdraw method Methods 0.000 claims description 8
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 7
- 238000003280 down draw process Methods 0.000 claims description 7
- 238000010828 elution Methods 0.000 claims description 7
- 238000006124 Pilkington process Methods 0.000 claims description 6
- 238000002844 melting Methods 0.000 description 23
- 230000008018 melting Effects 0.000 description 22
- 239000005357 flat glass Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 239000000203 mixture Substances 0.000 description 13
- 229910052770 Uranium Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052776 Thorium Inorganic materials 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000006060 molten glass Substances 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 238000003698 laser cutting Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002649 leather substitute Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000002285 radioactive effect Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000011819 refractory material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- -1 alkali metal cerium oxide Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000008395 clarifying agent Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical group 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 208000032544 Cicatrix Diseases 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 241000219000 Populus Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- UFRMDAJDYAOBRU-UHFFFAOYSA-N [U].[Ta] Chemical compound [U].[Ta] UFRMDAJDYAOBRU-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Glass Compositions (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003041411 | 2003-02-19 | ||
| JP2003339209 | 2003-09-30 | ||
| JP2004035383A JP4432110B2 (ja) | 2003-02-19 | 2004-02-12 | 半導体パッケージ用カバーガラス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200427649A TW200427649A (en) | 2004-12-16 |
| TWI358396B true TWI358396B (en) | 2012-02-21 |
Family
ID=32912836
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093103712A TWI358396B (en) | 2003-02-19 | 2004-02-17 | Cover glass for semiconductor package |
| TW099139999A TWI400208B (zh) | 2003-02-19 | 2004-02-17 | 半導體封裝用玻璃蓋 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099139999A TWI400208B (zh) | 2003-02-19 | 2004-02-17 | 半導體封裝用玻璃蓋 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4432110B2 (ja) |
| KR (2) | KR101015428B1 (ja) |
| TW (2) | TWI358396B (ja) |
| WO (1) | WO2004075289A1 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4756337B2 (ja) * | 2004-10-12 | 2011-08-24 | 日本電気硝子株式会社 | 固体撮像素子用カバーガラス |
| JP4923556B2 (ja) * | 2005-12-16 | 2012-04-25 | 日本電気硝子株式会社 | 情報記録媒体用ガラス基板 |
| JP5071878B2 (ja) * | 2006-09-12 | 2012-11-14 | 日本電気硝子株式会社 | 無アルカリガラスおよびこれを用いた無アルカリガラス基板 |
| US7666511B2 (en) * | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
| US20100215862A1 (en) * | 2009-02-26 | 2010-08-26 | Sinue Gomez | Method for forming an opal glass |
| JP5594522B2 (ja) * | 2009-07-03 | 2014-09-24 | 日本電気硝子株式会社 | 電子デバイス製造用ガラスフィルム積層体 |
| CN102844858A (zh) * | 2010-04-20 | 2012-12-26 | 旭硝子株式会社 | 用于形成半导体器件贯通电极的玻璃基板 |
| JP5894754B2 (ja) * | 2011-09-16 | 2016-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| KR101641980B1 (ko) * | 2012-06-25 | 2016-07-22 | 니폰 덴키 가라스 가부시키가이샤 | 강화 유리 기판 및 그 제조 방법 |
| JP6571398B2 (ja) * | 2015-06-04 | 2019-09-04 | リンテック株式会社 | 半導体用保護フィルム、半導体装置及び複合シート |
| JP7047757B2 (ja) | 2016-05-25 | 2022-04-05 | Ａｇｃ株式会社 | 無アルカリガラス基板、積層基板、およびガラス基板の製造方法 |
| CN110885972A (zh) * | 2019-10-30 | 2020-03-17 | 杭州美迪凯光电科技股份有限公司 | 一种消除摄像模组点子缺陷的ald制备方法及其产物 |
| CN110767668B (zh) | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6374935A (ja) * | 1986-09-17 | 1988-04-05 | Nippon Electric Glass Co Ltd | 耐薬品性に優れたガラス基板 |
| JPH11209145A (ja) * | 1998-01-20 | 1999-08-03 | Nippon Electric Glass Co Ltd | 光半導体用窓ガラス |
| JP2000143286A (ja) * | 1998-09-04 | 2000-05-23 | Nippon Electric Glass Co Ltd | 鉛溶出の少ない管ガラス |
| DE10005088C1 (de) * | 2000-02-04 | 2001-03-15 | Schott Glas | Alkalihaltiges Aluminoborosilicatglas und seine Verwendung |
| JP3506237B2 (ja) * | 2000-10-19 | 2004-03-15 | 日本電気硝子株式会社 | 固体撮像素子用カバーガラス |
| JP2002308643A (ja) * | 2001-02-01 | 2002-10-23 | Nippon Electric Glass Co Ltd | 無アルカリガラス及びディスプレイ用ガラス基板 |
| JP2003188450A (ja) * | 2001-12-17 | 2003-07-04 | Nippon Electric Glass Co Ltd | 光半導体用カバーガラス |
-
2004
- 2004-02-12 JP JP2004035383A patent/JP4432110B2/ja not_active Expired - Fee Related
- 2004-02-16 KR KR1020057012876A patent/KR101015428B1/ko active IP Right Grant
- 2004-02-16 KR KR1020107023852A patent/KR101156984B1/ko active IP Right Grant
- 2004-02-16 WO PCT/JP2004/001659 patent/WO2004075289A1/ja active Application Filing
- 2004-02-17 TW TW093103712A patent/TWI358396B/zh not_active IP Right Cessation
- 2004-02-17 TW TW099139999A patent/TWI400208B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200427649A (en) | 2004-12-16 |
| TWI400208B (zh) | 2013-07-01 |
| JP4432110B2 (ja) | 2010-03-17 |
| KR20100119828A (ko) | 2010-11-10 |
| WO2004075289A1 (ja) | 2004-09-02 |
| TW201118052A (en) | 2011-06-01 |
| JP2005126311A (ja) | 2005-05-19 |
| KR101015428B1 (ko) | 2011-02-22 |
| KR101156984B1 (ko) | 2012-06-20 |
| KR20050103276A (ko) | 2005-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6604337B2 (ja) | ガラス基板、積層基板、およびガラス基板の製造方法 | |
| KR101446971B1 (ko) | 무알칼리 유리 | |
| JP5378158B2 (ja) | 半導体パッケージ用カバーガラス | |
| TWI358396B (en) | Cover glass for semiconductor package | |
| JP5909937B2 (ja) | 半導体パッケージ用カバーガラス及びその製造方法 | |
| JP7287524B2 (ja) | 無アルカリガラス基板、積層基板、およびガラス基板の製造方法 | |
| JP2002249340A (ja) | 半導体パッケージ用カバーガラス | |
| JP2005162600A (ja) | 半導体パッケージ用カバーガラス | |
| JP2022027842A (ja) | ガラス基板、積層基板、および積層体 | |
| JP5348598B2 (ja) | 半導体素子用ガラス基板およびそれを用いたチップスケールパッケージ | |
| JP2005126320A (ja) | 固体撮像素子パッケージ用窓ガラス | |
| CN100390968C (zh) | 半导体封装体用外罩玻璃及其制造方法 | |
| JP2005008509A (ja) | 光半導体パッケージ用カバーガラス及びその製造方法 | |
| JP5467538B2 (ja) | 半導体素子用ガラス基板およびそれを用いたチップスケールパッケージ | |
| JP2002249323A (ja) | 半導体パッケージ用カバーガラス及びその製造方法 | |
| JP2002348142A (ja) | 半導体パッケージ用カバーガラス及び固体撮像素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |