TWI355737B - - Google Patents

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Publication number
TWI355737B
TWI355737B TW096144757A TW96144757A TWI355737B TW I355737 B TWI355737 B TW I355737B TW 096144757 A TW096144757 A TW 096144757A TW 96144757 A TW96144757 A TW 96144757A TW I355737 B TWI355737 B TW I355737B
Authority
TW
Taiwan
Prior art keywords
electrode
region
light
sensing element
photo
Prior art date
Application number
TW096144757A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834906A (en
Inventor
Mitsuharu Tai
Hideo Sato
Mutsuko Hatano
Masayoshi Kinoshita
Original Assignee
Hitachi Displays Ltd
Panasonic Liquid Crystal Displ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd, Panasonic Liquid Crystal Displ filed Critical Hitachi Displays Ltd
Publication of TW200834906A publication Critical patent/TW200834906A/zh
Application granted granted Critical
Publication of TWI355737B publication Critical patent/TWI355737B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Crystal (AREA)
TW096144757A 2006-12-18 2007-11-26 Highly sensitive photo-sensing element and photo-sensing device using the same TW200834906A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006339745A JP2008153427A (ja) 2006-12-18 2006-12-18 高感度光センサ素子及びそれを用いた光センサ装置

Publications (2)

Publication Number Publication Date
TW200834906A TW200834906A (en) 2008-08-16
TWI355737B true TWI355737B (enExample) 2012-01-01

Family

ID=39526114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144757A TW200834906A (en) 2006-12-18 2007-11-26 Highly sensitive photo-sensing element and photo-sensing device using the same

Country Status (5)

Country Link
US (2) US20080142920A1 (enExample)
JP (1) JP2008153427A (enExample)
KR (1) KR20080056648A (enExample)
CN (1) CN101207164B (enExample)
TW (1) TW200834906A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200825563A (en) * 2006-12-11 2008-06-16 Innolux Display Corp Light supply device and liquid crystal display device using the same
US8772699B2 (en) * 2009-03-02 2014-07-08 Sharp Kabushiki Kaisha Display device having a photosensor
JP5149993B2 (ja) * 2009-06-26 2013-02-20 シャープ株式会社 フォトトランジスタ及びそれを備えた表示装置
KR101641618B1 (ko) 2009-08-05 2016-07-22 삼성디스플레이 주식회사 가시광 차단 부재, 가시광 차단 부재를 포함하는 적외선 센서 및 적외선 센서를 포함하는 액정 표시 장치
JP5481127B2 (ja) * 2009-08-19 2014-04-23 株式会社ジャパンディスプレイ センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器
KR101610846B1 (ko) * 2009-09-08 2016-04-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR101675841B1 (ko) * 2009-12-21 2016-11-14 엘지디스플레이 주식회사 표시 장치의 포토 센서 및 이의 제조 방법
KR101672344B1 (ko) * 2010-05-20 2016-11-04 삼성전자주식회사 광센싱 회로, 상기 광센싱 회로의 구동 방법, 및 상기 광센싱 회로를 채용한 광센싱 장치
TWI460611B (zh) * 2010-06-07 2014-11-11 Au Optronics Corp 觸控鍵盤
US8530266B1 (en) * 2012-07-18 2013-09-10 Omnivision Technologies, Inc. Image sensor having metal grid with a triangular cross-section
TWI486563B (zh) 2012-08-16 2015-06-01 元太科技工業股份有限公司 光感測器及其光電晶體的驅動方法
TWI485372B (zh) * 2012-11-16 2015-05-21 Au Optronics Corp 光感測電路及光感測之控制方法
US10847567B2 (en) 2017-01-12 2020-11-24 Mitsubishi Electric Corporation Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other
CN114267689A (zh) * 2017-10-26 2022-04-01 上海耕岩智能科技有限公司 一种光侦测装置和光侦测器件
CN108231943B (zh) * 2017-12-14 2020-05-15 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
CN109004058B (zh) * 2018-07-11 2020-06-30 浙江大学 一种具有光学栅极的锗沟道场效应晶体管器件及其制造方法
TW202332072A (zh) * 2022-01-19 2023-08-01 友達光電股份有限公司 感測裝置
CN114822340A (zh) * 2022-05-25 2022-07-29 信利光电股份有限公司 一种显示模组亮度均匀性快速测试方法及系统
CN116744735A (zh) * 2023-05-15 2023-09-12 合肥维信诺科技有限公司 显示面板、显示装置和制备方法
CN120236553B (zh) * 2025-06-03 2025-09-05 惠科股份有限公司 显示装置及其驱动方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628310B2 (ja) * 1986-12-25 1994-04-13 キヤノン株式会社 光電変換装置
JPH028055U (enExample) * 1988-06-24 1990-01-18
JP3377853B2 (ja) * 1994-03-23 2003-02-17 ティーディーケイ株式会社 薄膜トランジスタの作製方法
JP3501379B2 (ja) * 1994-10-18 2004-03-02 Ｔｄｋ株式会社 光源付きイメージセンサ
TW439003B (en) * 1995-11-17 2001-06-07 Semiconductor Energy Lab Display device
US6617644B1 (en) * 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP3617800B2 (ja) * 1999-12-28 2005-02-09 松下電器産業株式会社 Ｔｆｔアレイ基板とその製造方法それを用いた液晶表示装置
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW582118B (en) * 2003-04-10 2004-04-01 Au Optronics Corp Asymmetry thin film transistor
JP3981055B2 (ja) * 2003-08-04 2007-09-26 Ｔｄｋ株式会社 光源付きイメージセンサ
JP4737956B2 (ja) 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
JP2005250454A (ja) * 2004-02-06 2005-09-15 Sanyo Electric Co Ltd 光センサ付きディスプレイおよびその製造方法
JP2006186266A (ja) * 2004-12-28 2006-07-13 Toshiba Matsushita Display Technology Co Ltd 光電変換素子及びこれを用いた表示装置
JP2006332287A (ja) * 2005-05-25 2006-12-07 Toshiba Matsushita Display Technology Co Ltd 薄膜ダイオード

Also Published As

Publication number Publication date
JP2008153427A (ja) 2008-07-03
US8338867B2 (en) 2012-12-25
US20080142920A1 (en) 2008-06-19
TW200834906A (en) 2008-08-16
KR20080056648A (ko) 2008-06-23
CN101207164B (zh) 2010-12-22
US20120068287A1 (en) 2012-03-22
CN101207164A (zh) 2008-06-25

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