TWI355026B - - Google Patents

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Publication number
TWI355026B
TWI355026B TW097114974A TW97114974A TWI355026B TW I355026 B TWI355026 B TW I355026B TW 097114974 A TW097114974 A TW 097114974A TW 97114974 A TW97114974 A TW 97114974A TW I355026 B TWI355026 B TW I355026B
Authority
TW
Taiwan
Prior art keywords
composition
mechanical polishing
chemical mechanical
sarcosine
inhibitor
Prior art date
Application number
TW097114974A
Other languages
English (en)
Chinese (zh)
Other versions
TW200945429A (en
Inventor
Song Yuan Chang
Ming Hui Lu
Ming Che Ho
Original Assignee
Uwiz Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uwiz Technology Co Ltd filed Critical Uwiz Technology Co Ltd
Priority to TW097114974A priority Critical patent/TW200945429A/zh
Priority to SG201103505-2A priority patent/SG171692A1/en
Priority to SG200805785-3A priority patent/SG156559A1/en
Priority to JP2008202884A priority patent/JP5567261B2/ja
Publication of TW200945429A publication Critical patent/TW200945429A/zh
Application granted granted Critical
Publication of TWI355026B publication Critical patent/TWI355026B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097114974A 2008-04-24 2008-04-24 Composition of chemical mechanical polishing TW200945429A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW097114974A TW200945429A (en) 2008-04-24 2008-04-24 Composition of chemical mechanical polishing
SG201103505-2A SG171692A1 (en) 2008-04-24 2008-08-05 Chemical mechanical polishing composition
SG200805785-3A SG156559A1 (en) 2008-04-24 2008-08-05 Chemical mechanical polishing composition
JP2008202884A JP5567261B2 (ja) 2008-04-24 2008-08-06 化学機械研磨の構成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097114974A TW200945429A (en) 2008-04-24 2008-04-24 Composition of chemical mechanical polishing

Publications (2)

Publication Number Publication Date
TW200945429A TW200945429A (en) 2009-11-01
TWI355026B true TWI355026B (enExample) 2011-12-21

Family

ID=41392753

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097114974A TW200945429A (en) 2008-04-24 2008-04-24 Composition of chemical mechanical polishing

Country Status (3)

Country Link
JP (1) JP5567261B2 (enExample)
SG (2) SG171692A1 (enExample)
TW (1) TW200945429A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9528030B1 (en) * 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002348562A (ja) * 2001-05-25 2002-12-04 Minebea Co Ltd 板金塗装用コンパウンド
JP2004153086A (ja) * 2002-10-31 2004-05-27 Showa Denko Kk 金属研磨組成物、金属膜の研磨方法および基板の製造方法
JP2005340755A (ja) * 2003-11-14 2005-12-08 Showa Denko Kk 研磨組成物および研磨方法
WO2005047410A1 (en) * 2003-11-14 2005-05-26 Showa Denko K.K. Polishing composition and polishing method
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2007088379A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液、及び、化学機械的研磨方法
JP2007189148A (ja) * 2006-01-16 2007-07-26 Fujifilm Corp 化学的機械的研磨方法
TWI437083B (zh) * 2006-07-28 2014-05-11 Showa Denko Kk 研磨組成物
JP2007221170A (ja) * 2007-05-18 2007-08-30 Hitachi Chem Co Ltd 金属用研磨液の調製方法
JP2009081300A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 金属研磨用組成物及びそれを用いた研磨方法
JP2009094430A (ja) * 2007-10-12 2009-04-30 Adeka Corp Cmp用研磨組成物
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same

Also Published As

Publication number Publication date
TW200945429A (en) 2009-11-01
JP5567261B2 (ja) 2014-08-06
SG156559A1 (en) 2009-11-26
SG171692A1 (en) 2011-06-29
JP2009267325A (ja) 2009-11-12

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