JP5567261B2 - 化学機械研磨の構成物 - Google Patents

化学機械研磨の構成物 Download PDF

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Publication number
JP5567261B2
JP5567261B2 JP2008202884A JP2008202884A JP5567261B2 JP 5567261 B2 JP5567261 B2 JP 5567261B2 JP 2008202884 A JP2008202884 A JP 2008202884A JP 2008202884 A JP2008202884 A JP 2008202884A JP 5567261 B2 JP5567261 B2 JP 5567261B2
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JP
Japan
Prior art keywords
composition
polishing
chemical mechanical
mechanical polishing
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008202884A
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English (en)
Japanese (ja)
Other versions
JP2009267325A (ja
Inventor
張松源
陸明輝
何明徹
Original Assignee
盟智科技股▲ふん▼有限公司
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Publication of JP2009267325A publication Critical patent/JP2009267325A/ja
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Publication of JP5567261B2 publication Critical patent/JP5567261B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008202884A 2008-04-24 2008-08-06 化学機械研磨の構成物 Active JP5567261B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW097114974A TW200945429A (en) 2008-04-24 2008-04-24 Composition of chemical mechanical polishing
TW097114974 2008-04-24

Publications (2)

Publication Number Publication Date
JP2009267325A JP2009267325A (ja) 2009-11-12
JP5567261B2 true JP5567261B2 (ja) 2014-08-06

Family

ID=41392753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008202884A Active JP5567261B2 (ja) 2008-04-24 2008-08-06 化学機械研磨の構成物

Country Status (3)

Country Link
JP (1) JP5567261B2 (enExample)
SG (2) SG171692A1 (enExample)
TW (1) TW200945429A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9528030B1 (en) * 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002348562A (ja) * 2001-05-25 2002-12-04 Minebea Co Ltd 板金塗装用コンパウンド
JP2004153086A (ja) * 2002-10-31 2004-05-27 Showa Denko Kk 金属研磨組成物、金属膜の研磨方法および基板の製造方法
JP2005340755A (ja) * 2003-11-14 2005-12-08 Showa Denko Kk 研磨組成物および研磨方法
WO2005047410A1 (en) * 2003-11-14 2005-05-26 Showa Denko K.K. Polishing composition and polishing method
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2007088379A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液、及び、化学機械的研磨方法
JP2007189148A (ja) * 2006-01-16 2007-07-26 Fujifilm Corp 化学的機械的研磨方法
TWI437083B (zh) * 2006-07-28 2014-05-11 Showa Denko Kk 研磨組成物
JP2007221170A (ja) * 2007-05-18 2007-08-30 Hitachi Chem Co Ltd 金属用研磨液の調製方法
JP2009081300A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 金属研磨用組成物及びそれを用いた研磨方法
JP2009094430A (ja) * 2007-10-12 2009-04-30 Adeka Corp Ｃｍｐ用研磨組成物
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same

Also Published As

Publication number Publication date
TW200945429A (en) 2009-11-01
TWI355026B (enExample) 2011-12-21
SG156559A1 (en) 2009-11-26
SG171692A1 (en) 2011-06-29
JP2009267325A (ja) 2009-11-12

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