TWI348596B - Exposure apparatus and method - Google Patents

Exposure apparatus and method

Info

Publication number
TWI348596B
TWI348596B TW095126818A TW95126818A TWI348596B TW I348596 B TWI348596 B TW I348596B TW 095126818 A TW095126818 A TW 095126818A TW 95126818 A TW95126818 A TW 95126818A TW I348596 B TWI348596 B TW I348596B
Authority
TW
Taiwan
Prior art keywords
exposure apparatus
exposure
Prior art date
Application number
TW095126818A
Other languages
English (en)
Chinese (zh)
Other versions
TW200717186A (en
Inventor
Kazuhiro Takahashi
Koji Mikami
Michio Kono
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200717186A publication Critical patent/TW200717186A/zh
Application granted granted Critical
Publication of TWI348596B publication Critical patent/TWI348596B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095126818A 2005-07-22 2006-07-21 Exposure apparatus and method TWI348596B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005212254A JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Publications (2)

Publication Number Publication Date
TW200717186A TW200717186A (en) 2007-05-01
TWI348596B true TWI348596B (en) 2011-09-11

Family

ID=37656739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126818A TWI348596B (en) 2005-07-22 2006-07-21 Exposure apparatus and method

Country Status (5)

Country Link
US (1) US7864296B2 (enExample)
JP (1) JP4701030B2 (enExample)
KR (1) KR100871505B1 (enExample)
CN (1) CN1900828B (enExample)
TW (1) TWI348596B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007051574A1 (en) * 2005-11-03 2007-05-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
JP4478670B2 (ja) * 2006-09-08 2010-06-09 ソニー株式会社 １次元照明装置及び画像生成装置
DE102008003916A1 (de) * 2007-01-23 2008-07-24 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit Messvorrichtung sowie Verfahren zum Messen einer Bestrahlungsstärkeverteilung
KR100919578B1 (ko) * 2007-02-15 2009-10-01 주식회사 하이닉스반도체 노광 장치 및 이를 이용한 반도체 소자의 형성 방법
JP4966724B2 (ja) 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
US7817250B2 (en) 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
JP2009025553A (ja) 2007-07-19 2009-02-05 Canon Inc 位相シフトマスク
JP4950795B2 (ja) * 2007-07-30 2012-06-13 キヤノン株式会社 露光装置、デバイス製造方法及び補正方法
US7999920B2 (en) * 2007-08-22 2011-08-16 Asml Netherlands B.V. Method of performing model-based scanner tuning
CN101849210B (zh) * 2007-11-08 2012-11-14 Asml荷兰有限公司 光刻投影设备和补偿扰动因素的方法
KR100945387B1 (ko) * 2007-11-14 2010-03-04 서강대학교산학협력단 시료의 비선형계수의 균질성 검사 장치
JP5055141B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 評価方法、調整方法、露光装置、およびプログラム
JP2009194041A (ja) 2008-02-12 2009-08-27 Canon Inc 評価方法、調整方法、露光装置、およびコンピュータプログラム
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP4568340B2 (ja) * 2008-03-12 2010-10-27 株式会社東芝 半導体装置の製造方法
KR101386353B1 (ko) * 2008-05-09 2014-04-16 칼 짜이스 에스엠티 게엠베하 푸리에 광학 시스템을 포함하는 조명 시스템
WO2009148974A1 (en) * 2008-06-03 2009-12-10 Brion Technologies, Inc. Model-based scanner tuning methods
JP2010034478A (ja) * 2008-07-31 2010-02-12 Toshiba Corp 露光装置の管理方法、半導体装置の製造方法及びフォトマスク
KR101688506B1 (ko) * 2008-09-01 2016-12-21 디2에스, 인코포레이티드 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법
JP2010114266A (ja) * 2008-11-06 2010-05-20 Canon Inc 露光装置およびその制御方法、ならびにデバイス製造方法
EP2207064A1 (en) * 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
WO2011102109A1 (ja) * 2010-02-20 2011-08-25 株式会社ニコン 光源最適化方法、露光方法、デバイス製造方法、プログラム、露光装置、リソグラフィシステム、及び光源評価方法、並びに光源変調方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
WO2012116710A1 (en) * 2011-02-28 2012-09-07 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
JP5168526B2 (ja) * 2011-05-10 2013-03-21 大日本印刷株式会社 投射型映像表示装置
DE102012203944A1 (de) * 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
US9823075B2 (en) 2013-01-10 2017-11-21 Xiaotian Steve Yao Non-interferometric optical gyroscope based on polarization sensing
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids
WO2014154229A1 (en) 2013-03-28 2014-10-02 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution
JP6244462B2 (ja) 2013-11-20 2017-12-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法およびリソグラフィ装置
CN103926806B (zh) * 2014-05-05 2016-03-30 北京理工大学 一种实现光瞳偏振态任意分布的光刻照明系统设计方法
CN107561850B (zh) * 2017-08-08 2020-10-09 广东弘景光电科技股份有限公司 广角摄像头模组的检测方法
WO2019048295A1 (en) * 2017-09-07 2019-03-14 Asml Netherlands B.V. LITHOGRAPHIC METHOD AND APPARATUS
KR20230155617A (ko) * 2018-01-24 2023-11-10 가부시키가이샤 니콘 노광 장치 및 노광 방법
CN115039032A (zh) * 2020-03-19 2022-09-09 极光先进雷射株式会社 曝光系统、激光控制参数的生成方法和电子器件的制造方法
CN113820922B (zh) * 2020-06-18 2024-08-02 台湾积体电路制造股份有限公司 热点预测方法、装置及记录介质
DE102021202847A1 (de) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330648B2 (ja) * 1992-10-06 2002-09-30 富士通株式会社 光源形状の最適化方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
JP3630852B2 (ja) * 1995-05-16 2005-03-23 キヤノン株式会社 パターン形成状態検出装置及びそれを用いた投影露光装置
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
AU8885198A (en) * 1997-08-26 1999-03-16 Nikon Corporation Aligner, exposure method, method of pressure adjustment of projection optical system, and method of assembling aligner
WO2001084382A1 (en) * 2000-05-04 2001-11-08 Kla-Tencor, Inc. Methods and systems for lithography process control
TW552561B (en) * 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JP2002319539A (ja) * 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP4436029B2 (ja) * 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
JP4154144B2 (ja) * 2001-11-13 2008-09-24 キヤノン株式会社 露光装置、発光制御方法、およびデバイス製造方法
JP4298336B2 (ja) * 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
JP3689681B2 (ja) * 2002-05-10 2005-08-31 キヤノン株式会社 測定装置及びそれを有する装置群
JP2004037137A (ja) * 2002-07-01 2004-02-05 Canon Inc 複屈折測定装置、除歪装置、偏光状態検出装置及び露光装置
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
WO2004100236A1 (ja) * 2003-05-09 2004-11-18 Nikon Corporation 照明光学系、投影露光装置、マイクロデバイスの製造方法、照明装置の製造方法、投影露光装置の調整方法、及び投影露光装置の製造方法
JP2005005521A (ja) * 2003-06-12 2005-01-06 Nikon Corp 露光装置、露光方法、および偏光状態測定装置
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
KR101119779B1 (ko) * 2003-09-26 2012-03-23 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래피 투영 노광
JP4351962B2 (ja) * 2004-07-05 2009-10-28 株式会社東芝 露光システム及び半導体装置の製造方法
WO2006016584A1 (ja) * 2004-08-09 2006-02-16 Nikon Corporation 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
US7619747B2 (en) * 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device
US7312852B2 (en) * 2004-12-28 2007-12-25 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US8675176B2 (en) * 2005-02-25 2014-03-18 Asml Netherlands B.V. Parameter control in a lithographic apparatus using polarization

Also Published As

Publication number Publication date
JP4701030B2 (ja) 2011-06-15
CN1900828A (zh) 2007-01-24
KR20070012248A (ko) 2007-01-25
CN1900828B (zh) 2011-11-02
TW200717186A (en) 2007-05-01
US7864296B2 (en) 2011-01-04
JP2007035671A (ja) 2007-02-08
US20070046921A1 (en) 2007-03-01
KR100871505B1 (ko) 2008-12-05

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