TWI348593B - Amine compound, chemically amplified resist composition and patterning process - Google Patents

Amine compound, chemically amplified resist composition and patterning process

Info

Publication number
TWI348593B
TWI348593B TW095137750A TW95137750A TWI348593B TW I348593 B TWI348593 B TW I348593B TW 095137750 A TW095137750 A TW 095137750A TW 95137750 A TW95137750 A TW 95137750A TW I348593 B TWI348593 B TW I348593B
Authority
TW
Taiwan
Prior art keywords
amine compound
resist composition
patterning process
chemically amplified
amplified resist
Prior art date
Application number
TW095137750A
Other languages
English (en)
Other versions
TW200734820A (en
Inventor
Takeru Watanabe
Jun Hatakeyama
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200734820A publication Critical patent/TW200734820A/zh
Application granted granted Critical
Publication of TWI348593B publication Critical patent/TWI348593B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095137750A 2005-10-14 2006-10-13 Amine compound, chemically amplified resist composition and patterning process TWI348593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005299558A JP4671035B2 (ja) 2005-10-14 2005-10-14 化学増幅型レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200734820A TW200734820A (en) 2007-09-16
TWI348593B true TWI348593B (en) 2011-09-11

Family

ID=38034354

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137750A TWI348593B (en) 2005-10-14 2006-10-13 Amine compound, chemically amplified resist composition and patterning process

Country Status (4)

Country Link
US (1) US7468236B2 (zh)
JP (1) JP4671035B2 (zh)
KR (1) KR100988679B1 (zh)
TW (1) TWI348593B (zh)

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US7759047B2 (en) 2006-05-26 2010-07-20 Shin-Etsu Chemical Co., Ltd. Resist protective film composition and patterning process
JP4895030B2 (ja) 2006-10-04 2012-03-14 信越化学工業株式会社 高分子化合物、レジスト保護膜材料、及びパターン形成方法
JP5331308B2 (ja) * 2007-03-26 2013-10-30 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP5150327B2 (ja) * 2007-08-03 2013-02-20 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP5071658B2 (ja) 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
JP5589281B2 (ja) 2008-12-25 2014-09-17 セントラル硝子株式会社 含フッ素化合物、含フッ素高分子化合物、レジスト組成物及びそれを用いたパターン形成方法
JP5565231B2 (ja) * 2009-09-25 2014-08-06 住友化学株式会社 レジスト組成物
EP2521941A4 (en) * 2010-01-08 2013-10-23 Fujifilm Corp Pattern Forming Device, Sensitive Resin Compound and Resist Film Versus Actinic Radiation or Radiation
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP5954045B2 (ja) * 2011-09-27 2016-07-20 住友化学株式会社 レジスト組成物
JP5754363B2 (ja) * 2011-12-09 2015-07-29 信越化学工業株式会社 化学増幅ネガ型レジスト組成物、光硬化性ドライフィルム、その製造方法、パターン形成方法、及び電気・電子部品保護用皮膜
KR102387673B1 (ko) * 2017-09-29 2022-04-18 후지필름 가부시키가이샤 감광성 수지 조성물, 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법
US12001139B2 (en) 2020-08-04 2024-06-04 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP2022032980A (ja) 2020-08-13 2022-02-25 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2022036004A (ja) 2020-08-20 2022-03-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN113253570B (zh) * 2021-05-21 2024-08-06 上海邃铸科技有限公司 一种含氟的光酸抑制剂的光刻胶

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TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
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SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP4501248B2 (ja) 2000-07-24 2010-07-14 東ソー株式会社 レジスト剥離剤
KR100760146B1 (ko) * 2000-09-18 2007-09-18 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP4320520B2 (ja) 2000-11-29 2009-08-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100670090B1 (ko) 2000-11-29 2007-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 아민 화합물, 레지스트 재료 및 패턴 형성 방법
TW200403523A (en) 2002-03-22 2004-03-01 Shinetsu Chemical Co Photoacid generators, chemically amplified resist compositions, and patterning process
EP1595182B1 (en) 2003-02-19 2015-09-30 Basf Se Halogenated oxime derivatives and the use thereof as latent acids
JP4458255B2 (ja) * 2003-11-14 2010-04-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7063931B2 (en) 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
JP4491335B2 (ja) * 2004-02-16 2010-06-30 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4240223B2 (ja) * 2004-03-22 2009-03-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2006251672A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
US7468236B2 (en) 2008-12-23
JP2007108451A (ja) 2007-04-26
KR100988679B1 (ko) 2010-10-18
KR20070041385A (ko) 2007-04-18
US20070087287A1 (en) 2007-04-19
JP4671035B2 (ja) 2011-04-13
TW200734820A (en) 2007-09-16

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