TWI341758B - Method of breaking a brittle substrate - Google Patents

Method of breaking a brittle substrate Download PDF

Info

Publication number
TWI341758B
TWI341758B TW92122628A TW92122628A TWI341758B TW I341758 B TWI341758 B TW I341758B TW 92122628 A TW92122628 A TW 92122628A TW 92122628 A TW92122628 A TW 92122628A TW I341758 B TWI341758 B TW I341758B
Authority
TW
Taiwan
Prior art keywords
substrate
surfactant
breaking
brittle material
line
Prior art date
Application number
TW92122628A
Other languages
English (en)
Other versions
TW200404634A (en
Inventor
Heinrich Brzesowsky Rudolf
Rudolf Balkenende Abraham
Gijsbertus Anthonius Van Agthoven Raymond
Hanricus Maria Timmermans Petrus
Petrus Willard Nicolaas
Original Assignee
Mitsuboshi Diamond Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=31896921&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI341758(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsuboshi Diamond Ind Co Ltd filed Critical Mitsuboshi Diamond Ind Co Ltd
Publication of TW200404634A publication Critical patent/TW200404634A/zh
Application granted granted Critical
Publication of TWI341758B publication Critical patent/TWI341758B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/095—Tubes, rods or hollow products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/304—Including means to apply thermal shock to work

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)

Description

1341758 玖、發明說明： 【發明所屬之技術領域】 本發明是有關於-種斷裂脆性基材之方法，該方法包括 的步驟有：提供脆性基材，用雷射光束加熱該基材以便在 基材上產生加熱點，相互移動該雷射光束與基材以便在基 材上產生加熱線，在加熱點後面局部施加冷媒來a卻美材 上的加熱點，使得顯微裂痕會在加熱線上傳播開，以及施 加機械力到基材上讓沿著傳播開的顯微裂痕線將基材斷: 開。 、 【先前技術】 許多用脆性非金屬材料做成的產品，比如用破璃與半導 體晶圓材料，都是將塊狀物、片狀物、薄片物和板狀物分 開成S午多所需尺寸大小的小片狀而形成。 美國專利扁號第6252 1 97案揭示出一種用物理方式分開 脆性基材方法，該方法是在基材内形成的顯微裂痕並控 制該顯微裂痕的傳^機械或t射切割裝置在_開始時: 在基材内形成顯微裂痕。施加雷射光束到基材的分割線上 括力壓氣體與水之混合物的冷卻劑流體會與雷射光束 '後緣相互交又。基材加熱區與冷卻劑流體之間的溫差會 傳播到顯微裂痕内。藉施加機械負載，結果讓基材沿著= 丄線斷裂成較小的片狀物’該片狀物可以進行進一步的 理，比如製造出顯示裝置。 如與該方法有關的問題是，進一步打開誘發表面裂痕所必 而的機械負載會隨著時間而增加亦即，機械負載愈高， 86986 則在诱發出顯料0 ,庙 n .. _ ’’、·裂痕以及最後將基材斷裂成較小片狀物之 常常不‘長。這不是所需要的，因為在工廠中， 可月b在經過雷射光束處理後便立刻⑯基材斷裂開。 t後續對基材的斷裂會造成邊緣損壞以及較低的生產 良率β 【發明内容】 一發月的目的在於提供一種斷裂方法，其中在顯微翠痕 。產生後’斷裂負載在整個過程中都會保持固定常數 。為此，依據本發明之方法的特徵為，該冷媒包括一種表 ?性W水'合液。本發明人等已經了解到，傳統方法中斷 4負載的增加是因為顯微裂痕被鎖定或已癒合。然而，如 X、媒包括—種表面活性劑水溶液，則表面活性劑會連 結到顯微裂痕的已斷裂石夕氧烧鍵。已斷_院鍵的再結 合以及'癒合都將不會發生，而且所需的斷裂負載在整個過 程中都將保持固定常數。此外，該表面活性劑會改變（降低 )裂痕的表面能量。結果，該裂痕會保持打開，且打開該裂 痕所需的負載將會降低。 【實施方式】 數個相關主張說明了本發明實施例的優點。 參考在此所說明的實施例，本發明的這些目的以及其它 目的都將變得明顯並獲得解釋。 圖1是使用依據本發明方法之設備的上視圖。雷射光束光 點3被聚焦到脆性材料的基材】上，比如玻璃、晶體矽石、 陶瓷或其組合體。雷射光束光點3所包含的能量會造成基材 86986 1341758 ο.1重量％的表面活性劑十Μ基三f基漠姻（CTAB) ’並在15小時後進行斷裂，7〇。 為了作比較’傳統機械分割法的機械負載也標示出來， 20 ° 從圖2所示的資料可以得到結論，如果是使用CTAB而且 在15小時後斷裂開時仍能保持降低，則機械負載被減少將 近係數2»當玻璃板進行進一步處理而且做出⑽面板時， 會獲得到較佳的製造良率。 CTAB是種屬於陽離子表面活性劑等級的化合物亦即 -種表面活性劑，一種如清潔劑般會降低液體表面能量的 基質。用屬於非離子與陰離子表面活性的化合物，比如分 別是十八烷基癸基（環氧乙烷）氫氧化物或十二烷基笨磺酸 鈉鹽’也可以得到良好的結果。所有化合物一般都具有結 合到顯微裂痕内已斷裂矽氧烷鍵（I懸吊鍵,）的能力。 當水溶液中出現的該化合物是在心⑴至丨重量％範圍内時 ’會得到良好的結果β 摘要的說，本發明是有關於一種將脆性基材斷裂開的方 法，該方法包括的步驟有：提供脆性基材i，用雷射光束3 加熱該基材並在基材上產生加熱點，相互移動該雷射光束 與基材而在基材2上產生一條加熱線，在加熱點後面局部施 加冷媒4來冷卻基材上的加熱點，使得顯微裂痕會在加熱線 上傳播開，以及施加機械力到基材上，讓顯微裂痕線沿著 傳播開而將基材斷裂開，其中該冷媒包括表面活性劑水溶 液6 86986

Claims (1)

1341758 第092122628號專利申請案 中文申請專利範圍替換本(99年12月;)U 拾、申請專利範圍： 1. 一種斷裂脆性材料之基材的方法，該包括的步驟有： -提供脆性材料之基材， -用雷射光束加熱該基材並在基材上產生加熱點， _相互移動該雷射A束與基材而在基材上產纟一條加熱 點的線， -局部施加冷媒來冷卻基材上的加熱點，使得顯微裂痕 會在加熱點的線上傳播開，以及 -施加機械力到基材上且沿著傳播開之顯微裂痕線將基 材斷裂開， 其中該冷媒包括表面活性劑水溶液。 2·如申請專利範圍第丨項之斷裂脆性材料之基材的方法，其 中該冷媒進一步包括空氣與表面活性劑水溶液混合在— 起。 3. 如申請專利範圍第丨項之斷裂脆性材料之基材的方法其 中該表面活性劑的濃度是在〇〇丨至丨重量％範圍内。 4. 如申請專利範圍第丨項之斷裂脆性材料之基材的方法，其 中該表面活性劑水溶液包括一陽離子表面活性劑。 5. 如申請專利範圍第4項之斷裂脆性材料之基材的方法，其 中該陽離子表面活性劑包括十六烷基三甲基溴化銨 (CTAB)。 6. 如申請專利範圍第丨項之斷裂脆性材料之基材的方法，其 中該表面活性劑水溶液包括一非離子性表面活性劑。 7. 如申請專利範圍第6項之斷裂脆性材料之基材的方法，其 86986-991206.doc 1341758 中該非離子性表面活性劑包括十八烷基癸基（環氧乙烷） 氫氧化物。 8. 如申請專利範圍第1項之斷裂脆性材料之基材的方法，其 中該表面活性劑水溶液包括一陰離子表面活性劑。 9. 如申請專利範圍第8項之斷裂脆性材料之基材的方法，其 中該陰離子表面活性劑包括十二烷基苯磺酸鈉鹽。 10. 如申請專利範圍第1項之斷裂脆性材料之基材的方法，其 中該脆性材料包括玻璃、晶體矽石、陶瓷或其組合物。
86986-991206.doc 2- 1341758 第092122628號專利申請案 中文圖式替換頁(99年12月）ί0 拾壹、圖式： 1
圖1 οοοοοοοο 7 6 5 4 3 2 1 機械負載(牛頓)
例 實 2 圖 86986-99l206.doc
TW92122628A 2002-08-21 2003-08-18 Method of breaking a brittle substrate TWI341758B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02078453 2002-08-21

Publications (2)

Publication Number Publication Date
TW200404634A TW200404634A (en) 2004-04-01
TWI341758B true TWI341758B (en) 2011-05-11

Family

ID=31896921

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92122628A TWI341758B (en) 2002-08-21 2003-08-18 Method of breaking a brittle substrate

Country Status (10)

Country Link
US (1) US7838795B2 (zh)
EP (1) EP1534463B1 (zh)
JP (1) JP2005536428A (zh)
KR (1) KR101016157B1 (zh)
CN (1) CN1675021A (zh)
AT (1) ATE321624T1 (zh)
AU (1) AU2003247104A1 (zh)
DE (1) DE60304365T2 (zh)
TW (1) TWI341758B (zh)
WO (1) WO2004018144A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005024563B9 (de) * 2005-05-28 2006-12-14 Schott Ag Verfahren zum Trennen von Glas und Verwendung einer dafür geeigneten Flüssigkeit
JP5011048B2 (ja) * 2007-09-27 2012-08-29 三星ダイヤモンド工業株式会社 脆性材料基板の加工方法
US8011207B2 (en) * 2007-11-20 2011-09-06 Corning Incorporated Laser scoring of glass sheets at high speeds and with low residual stress
KR101139306B1 (ko) 2007-12-27 2012-04-26 미쓰보시 다이야몬도 고교 가부시키가이샤 취성 재료 기판의 크랙 형성 방법
CN101513692B (zh) * 2008-02-21 2011-09-07 富士迈半导体精密工业（上海）有限公司 激光切割脆性材料的方法及装置
JP5193294B2 (ja) * 2008-05-30 2013-05-08 三星ダイヤモンド工業株式会社 レーザ加工装置およびレーザ加工方法
KR101258403B1 (ko) * 2011-12-09 2013-04-30 로체 시스템즈(주) 강화유리 기판 절단방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634243A (en) * 1969-01-09 1972-01-11 Cincinnati Milling Machine Co Method of removing suspended matter from cutting fluids and cutting oils by addition of cationic surfactants
US3833502A (en) * 1973-04-30 1974-09-03 Nalco Chemical Co Method for improving the adherence of metalworking coolants to metal surfaces
US4897153A (en) * 1989-04-24 1990-01-30 General Electric Company Method of processing siloxane-polyimides for electronic packaging applications
US5565363A (en) * 1991-10-21 1996-10-15 Wako Pure Chemical Industries, Ltd. Reagent composition for measuring ionic strength or specific gravity of aqueous solution samples
JPH07157792A (ja) * 1993-11-01 1995-06-20 Xerox Corp 水性ベース切削油剤
KR960042126A (ko) * 1995-05-31 1996-12-21 엄길용 액정기판 절단방법
KR970008386A (ko) * 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
US6350123B1 (en) * 1995-08-31 2002-02-26 Biolase Technology, Inc. Fluid conditioning system
GB2332223B (en) * 1997-12-13 2000-01-19 Sofitech Nv Viscoelastic surfactant based gelling composition for wellbore service fluids
US6211488B1 (en) * 1998-12-01 2001-04-03 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe
US6252197B1 (en) * 1998-12-01 2001-06-26 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a supplemental mechanical force applicator
JP2000233936A (ja) * 1999-02-10 2000-08-29 Mitsuboshi Diamond Kogyo Kk ガラス切断装置
EP1842898B1 (en) * 1999-07-22 2012-05-16 Diversey, Inc. Use of lubricant composition for lubricating a conveyor belt
EP1305381A4 (en) * 2000-07-28 2007-07-18 Corning Inc HIGH PERFORMANCE CUTTING OILS FOR GLASS, CRYSTALLINE OR AGGREGATED MATERIALS
KR100673073B1 (ko) * 2000-10-21 2007-01-22 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치
KR100676249B1 (ko) * 2001-05-23 2007-01-30 삼성전자주식회사 기판 절단용 냉매, 이를 이용한 기판 절단 방법 및 이를수행하기 위한 장치
US7253017B1 (en) * 2002-06-22 2007-08-07 Nanosolar, Inc. Molding technique for fabrication of optoelectronic devices
US7291782B2 (en) * 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method

Also Published As

Publication number Publication date
JP2005536428A (ja) 2005-12-02
TW200404634A (en) 2004-04-01
US20050263503A1 (en) 2005-12-01
CN1675021A (zh) 2005-09-28
US7838795B2 (en) 2010-11-23
KR101016157B1 (ko) 2011-02-17
KR20050059074A (ko) 2005-06-17
DE60304365D1 (de) 2006-05-18
WO2004018144A1 (en) 2004-03-04
EP1534463A1 (en) 2005-06-01
AU2003247104A1 (en) 2004-03-11
ATE321624T1 (de) 2006-04-15
DE60304365T2 (de) 2006-12-07
EP1534463B1 (en) 2006-03-29

Similar Documents

Publication Publication Date Title
JP5612289B2 (ja) ガラスシートのレーザー分割方法
TWI243081B (en) Method for cutting a non-metal substrate
JP5777120B2 (ja) 強化ガラス基板を罫書き及び分割するための方法
TWI648231B (zh) 脆性材料基板之分斷方法
CN105198198B (zh) 强化玻璃的机械划线和分离
JP5609870B2 (ja) 脆性材料基板の割断方法及び割断装置並びにその割断方法により得られる車両用窓ガラス
TWI341758B (en) Method of breaking a brittle substrate
JP2012111661A (ja) ガラス基板およびその製造方法
KR20080006643A (ko) 취성 재료에 초음파 유도 크랙 확대
JP2008127223A (ja) フラットパネルディスプレィ薄板の割断方法
JP2008115067A (ja) フラットパネルディスプレィ薄板の割断方法
JPH1071483A (ja) 脆性材料の割断方法
JP2012526718A (ja) 基板の端部を滑らかにし且つ／或いは斜角付けする方法
JP2001058281A (ja) レーザーを用いたスクライブ法
JP2007076937A (ja) スクライブしたガラスの割断方法及び装置
Hermanns Laser cutting of glass
JP2009107301A (ja) 脆性材料のフルボディ割断方法
JP2005536428A5 (zh)
JP2012006795A (ja) 割断方法および割断装置
JP4298072B2 (ja) 硬質脆性板の割断方法
JP2009137788A (ja) フラットパネルディスプレイ用のガラス基板
JP2007076936A (ja) 脆性材料の割断方法及び装置
JP2006137170A (ja) 脆性材料の割断方法及び装置
CN101879665A (zh) 脆性材料基板的激光切割方法
JP2016050158A (ja) ガラス物品、及びガラス物品の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees