TWI341594B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
TWI341594B
TWI341594B TW096113622A TW96113622A TWI341594B TW I341594 B TWI341594 B TW I341594B TW 096113622 A TW096113622 A TW 096113622A TW 96113622 A TW96113622 A TW 96113622A TW I341594 B TWI341594 B TW I341594B
Authority
TW
Taiwan
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
TW096113622A
Other languages
English (en)
Other versions
TW200744218A (en
Inventor
Kyung-Joong Joo
Han-Soo Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200744218A publication Critical patent/TW200744218A/zh
Application granted granted Critical
Publication of TWI341594B publication Critical patent/TWI341594B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42352—Gate electrodes for transistors with charge trapping gate insulator with the gate at least partly formed in a trench
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
TW096113622A 2006-05-18 2007-04-18 Semiconductor device and method of manufacturing the same TWI341594B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060044832A KR100729364B1 (ko) 2006-05-18 2006-05-18 리세스된 채널 영역을 갖는 반도체 장치 및 그 제조 방법
US11/657,650 US7626230B2 (en) 2006-05-18 2007-01-25 Semiconductor device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
TW200744218A TW200744218A (en) 2007-12-01
TWI341594B true TWI341594B (en) 2011-05-01

Family

ID=38359696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113622A TWI341594B (en) 2006-05-18 2007-04-18 Semiconductor device and method of manufacturing the same

Country Status (3)

Country Link
US (3) US7626230B2 (zh)
KR (1) KR100729364B1 (zh)
TW (1) TWI341594B (zh)

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KR20080111735A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR101360134B1 (ko) * 2007-07-23 2014-02-10 삼성전자주식회사 반도체 장치의 제조 방법
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US7705389B2 (en) 2007-08-29 2010-04-27 Micron Technology, Inc. Thickened sidewall dielectric for memory cell
KR100940644B1 (ko) * 2007-12-27 2010-02-05 주식회사 동부하이텍 반도체 소자 및 그 제조방법
US7863136B2 (en) * 2008-09-30 2011-01-04 Qimonda Ag Method of manufacturing integrated circuits including a FET with a gate spacer and a fin
KR101518332B1 (ko) * 2008-12-01 2015-05-08 삼성전자주식회사 반도체 장치 제조 방법
KR101510480B1 (ko) * 2008-12-24 2015-04-08 주식회사 동부하이텍 플래시 메모리 소자 및 그 제조 방법
JP2010219099A (ja) * 2009-03-13 2010-09-30 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR20120015178A (ko) * 2010-08-11 2012-02-21 삼성전자주식회사 반도체 소자 및 반도체 소자 제조 방법
US8642442B2 (en) 2010-08-26 2014-02-04 Micron Technology, Inc. Memory device having three-dimensional gate structure
US20140035069A1 (en) * 2011-06-04 2014-02-06 Avalanche Technology Inc. Field effect transistor having a trough channel
US20120306005A1 (en) * 2011-06-04 2012-12-06 Kimihiro Satoh Trough channel transistor and methods for making the same
US9614105B2 (en) 2013-04-22 2017-04-04 Cypress Semiconductor Corporation Charge-trap NOR with silicon-rich nitride as a charge trap layer
TWI562373B (en) * 2014-02-19 2016-12-11 Vanguard Int Semiconduct Corp Semiconductor device and method for manufacturing the same
US9978861B2 (en) 2014-04-09 2018-05-22 Vanguard International Semiconductor Corporation Semiconductor device having gate in trenches
KR102446403B1 (ko) * 2018-06-22 2022-09-21 삼성전자주식회사 반도체 장치, 반도체 장치의 제조 방법 및 반도체 장치의 레이아웃 디자인 방법
CN112086510A (zh) * 2019-06-13 2020-12-15 联华电子股份有限公司 存储器元件的结构
CN110277393A (zh) 2019-06-19 2019-09-24 上海华力微电子有限公司 闪存及其制造方法

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JPH07288324A (ja) 1994-04-18 1995-10-31 Sony Corp Ｍｏｓ型トランジスタ
DE19638439C2 (de) * 1996-09-19 2000-06-15 Siemens Ag Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren
US5960284A (en) * 1997-12-05 1999-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming vertical channel flash memory cell and device manufactured thereby
US6087222A (en) * 1998-03-05 2000-07-11 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical split gate flash memory device
US6048765A (en) 1998-06-03 2000-04-11 Texas Instruments - Acer Incorporated Method of forming high density buried bit line flash EEPROM memory cell with a shallow trench floating gate
KR20010046068A (ko) 1999-11-10 2001-06-05 박종섭 반도체 메모리 제조방법
US6583479B1 (en) * 2000-10-16 2003-06-24 Advanced Micro Devices, Inc. Sidewall NROM and method of manufacture thereof for non-volatile memory cells
TW510047B (en) * 2001-11-09 2002-11-11 Macronix Int Co Ltd Structure and manufacture method of silicon nitride read only memory
US20060180851A1 (en) * 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
DE10228768A1 (de) * 2001-06-28 2003-01-16 Samsung Electronics Co Ltd Nicht-flüchtige Floating-Trap-Halbleiterspeichervorrichtungen, die Sperrisolationsschichten mit hohen Dielektrizitätskonstanten enthaltend, und Verfahren
US6700154B1 (en) * 2002-09-20 2004-03-02 Lattice Semiconductor Corporation EEPROM cell with trench coupling capacitor
TW564552B (en) * 2002-10-21 2003-12-01 Nanya Technology Corp A trench type stacked gate flash memory and the method to fabricate the same
US7141851B2 (en) * 2003-08-22 2006-11-28 Samsung Electronics Co., Ltd. Transistors having a recessed channel region
KR100546378B1 (ko) 2003-09-09 2006-01-26 삼성전자주식회사 리세스 채널을 가지는 트랜지스터 제조 방법
US6844591B1 (en) * 2003-09-17 2005-01-18 Micron Technology, Inc. Method of forming DRAM access transistors
US6939751B2 (en) * 2003-10-22 2005-09-06 International Business Machines Corporation Method and manufacture of thin silicon on insulator (SOI) with recessed channel
KR100505712B1 (ko) * 2003-10-22 2005-08-02 삼성전자주식회사 리세스 채널 어레이 트랜지스터의 제조 방법
KR20050043424A (ko) 2003-11-06 2005-05-11 삼성전자주식회사 트랜지스터의 리세스 채널 형성 방법
US6825526B1 (en) * 2004-01-16 2004-11-30 Advanced Micro Devices, Inc. Structure for increasing drive current in a memory array and related method
KR20060042460A (ko) * 2004-11-09 2006-05-15 삼성전자주식회사 반도체소자의 리세스 채널을 갖는 트랜지스터 제조방법
KR100611140B1 (ko) * 2004-12-28 2006-08-09 삼성전자주식회사 트랜지스터의 게이트, 이의 제조 방법 및 게이트 구조를포함하는 불휘발성 메모리 장치, 이의 제조 방법.
US7279740B2 (en) * 2005-05-12 2007-10-09 Micron Technology, Inc. Band-engineered multi-gated non-volatile memory device with enhanced attributes

Also Published As

Publication number Publication date
US20070267681A1 (en) 2007-11-22
US20110014758A1 (en) 2011-01-20
US7825461B2 (en) 2010-11-02
US8012829B2 (en) 2011-09-06
KR100729364B1 (ko) 2007-06-15
US20070267692A1 (en) 2007-11-22
TW200744218A (en) 2007-12-01
US7626230B2 (en) 2009-12-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees