TWI341548B - Methods of base formation in a bicmos process - Google Patents

Methods of base formation in a bicmos process

Info

Publication number
TWI341548B
TWI341548B TW094106955A TW94106955A TWI341548B TW I341548 B TWI341548 B TW I341548B TW 094106955 A TW094106955 A TW 094106955A TW 94106955 A TW94106955 A TW 94106955A TW I341548 B TWI341548 B TW I341548B
Authority
TW
Taiwan
Prior art keywords
methods
base formation
bicmos process
bicmos
formation
Prior art date
Application number
TW094106955A
Other languages
English (en)
Other versions
TW200539262A (en
Inventor
Peter J Geiss
Marwan H Khater
Qizhi Liu
Randy W Mann
Robert J Purtell
Bethann Rainey
Jae-Sung Rieh
Andreas D Stricker
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200539262A publication Critical patent/TW200539262A/zh
Application granted granted Critical
Publication of TWI341548B publication Critical patent/TWI341548B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
TW094106955A 2004-03-13 2005-03-08 Methods of base formation in a bicmos process TWI341548B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/708,598 US6965133B2 (en) 2004-03-13 2004-03-13 Method of base formation in a BiCMOS process

Publications (2)

Publication Number Publication Date
TW200539262A TW200539262A (en) 2005-12-01
TWI341548B true TWI341548B (en) 2011-05-01

Family

ID=34919650

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106955A TWI341548B (en) 2004-03-13 2005-03-08 Methods of base formation in a bicmos process

Country Status (4)

Country Link
US (3) US6965133B2 (zh)
JP (1) JP4398394B2 (zh)
CN (1) CN100411190C (zh)
TW (1) TWI341548B (zh)

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DE102004017166B4 (de) * 2004-04-01 2007-10-11 Atmel Germany Gmbh Verfahren zur Herstellung von Bipolar-Transistoren
US7087940B2 (en) * 2004-04-22 2006-08-08 International Business Machines Corporation Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer
US7446007B2 (en) 2006-11-17 2008-11-04 International Business Machines Corporation Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof
US7709338B2 (en) * 2006-12-21 2010-05-04 International Business Machines Corporation BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
US7888742B2 (en) * 2007-01-10 2011-02-15 International Business Machines Corporation Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts
US7952165B2 (en) * 2007-01-10 2011-05-31 International Business Machines Corporation Heterojunction bipolar transistor (HBT) with self-aligned sub-lithographic metal-semiconductor alloy base contacts
US7892910B2 (en) 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
US7645666B2 (en) * 2007-07-23 2010-01-12 Infineon Technologies Ag Method of making a semiconductor device
WO2009141753A1 (en) * 2008-05-21 2009-11-26 Nxp B.V. A method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby
KR101448172B1 (ko) * 2008-07-02 2014-10-08 삼성전자주식회사 반도체 소자 및 그 제조 방법
CN102110606B (zh) * 2011-01-17 2015-08-19 上海华虹宏力半导体制造有限公司 异质结双极晶体管的形成方法及其异质结双极晶体管
US20120313146A1 (en) 2011-06-08 2012-12-13 International Business Machines Corporation Transistor and method of forming the transistor so as to have reduced base resistance
US20130277804A1 (en) * 2012-04-20 2013-10-24 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
CN102790081B (zh) * 2012-05-22 2015-05-06 清华大学 金属硅化物自对准锗硅异质结双极晶体管及其制备方法
CN102790079B (zh) * 2012-05-22 2015-04-15 清华大学 金属硅化物自对准锗硅异质结双极晶体管及其制备方法
CN102790080B (zh) * 2012-05-22 2015-04-15 清华大学 自对准抬升外基区锗硅异质结双极晶体管及其制备方法
CN102683395B (zh) * 2012-05-22 2014-10-15 清华大学 自对准抬升外基区锗硅异质结双极晶体管及其制备方法
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CN103035686B (zh) * 2012-12-20 2015-02-18 清华大学 隐埋硅化物抬升外基区全自对准双极晶体管及其制备方法
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US9653477B2 (en) 2014-01-03 2017-05-16 International Business Machines Corporation Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
US10032876B2 (en) 2014-03-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide having a non-angular profile
US9312370B2 (en) 2014-06-10 2016-04-12 Globalfoundries Inc. Bipolar transistor with extrinsic base region and methods of fabrication
US20150372099A1 (en) * 2014-06-19 2015-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide formation using a spike annealing process
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors
CN107731730B (zh) * 2016-08-12 2020-03-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
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Also Published As

Publication number Publication date
JP4398394B2 (ja) 2010-01-13
TW200539262A (en) 2005-12-01
US20050199908A1 (en) 2005-09-15
US7390721B2 (en) 2008-06-24
US6965133B2 (en) 2005-11-15
JP2005260239A (ja) 2005-09-22
US7696034B2 (en) 2010-04-13
US20080268604A1 (en) 2008-10-30
US20060017066A1 (en) 2006-01-26
CN100411190C (zh) 2008-08-13
CN1667834A (zh) 2005-09-14

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