TWI336476B - Storage circuit and method for storing or reading data by using the same - Google Patents
Storage circuit and method for storing or reading data by using the same Download PDFInfo
- Publication number
- TWI336476B TWI336476B TW095112657A TW95112657A TWI336476B TW I336476 B TWI336476 B TW I336476B TW 095112657 A TW095112657 A TW 095112657A TW 95112657 A TW95112657 A TW 95112657A TW I336476 B TWI336476 B TW I336476B
- Authority
- TW
- Taiwan
- Prior art keywords
- storage unit
- coupled
- write
- word line
- storage
- Prior art date
Links
- 238000003860 storage Methods 0.000 title claims description 161
- 238000000034 method Methods 0.000 title claims description 25
- 230000015654 memory Effects 0.000 claims description 59
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims 4
- 238000013500 data storage Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000003491 array Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241000219498 Alnus glutinosa Species 0.000 description 1
- 210000001744 T-lymphocyte Anatomy 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/132,457 US7295487B2 (en) | 2005-05-19 | 2005-05-19 | Storage circuit and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200643967A TW200643967A (en) | 2006-12-16 |
| TWI336476B true TWI336476B (en) | 2011-01-21 |
Family
ID=37448177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095112657A TWI336476B (en) | 2005-05-19 | 2006-04-10 | Storage circuit and method for storing or reading data by using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7295487B2 (enExample) |
| JP (1) | JP2008541333A (enExample) |
| KR (1) | KR20080009129A (enExample) |
| TW (1) | TWI336476B (enExample) |
| WO (1) | WO2006127117A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI630612B (zh) * | 2016-01-29 | 2018-07-21 | 台灣積體電路製造股份有限公司 | 靜態隨機存取記憶體陣列、靜態隨機存取記憶體追蹤單元以及靜態隨機存取記憶體陣列配置方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI455148B (zh) * | 2010-12-13 | 2014-10-01 | Vanguard Int Semiconduct Corp | 用以存取多埠輸入讀寫事件的積體裝置 |
| CN103597545B (zh) * | 2011-06-09 | 2016-10-19 | 株式会社半导体能源研究所 | 高速缓冲存储器及其驱动方法 |
| JP6012263B2 (ja) | 2011-06-09 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| US9208859B1 (en) | 2014-08-22 | 2015-12-08 | Globalfoundries Inc. | Low power static random access memory (SRAM) read data path |
| US9934846B1 (en) | 2017-03-01 | 2018-04-03 | Nxp Usa, Inc. | Memory circuit and method for increased write margin |
| US9940996B1 (en) | 2017-03-01 | 2018-04-10 | Nxp Usa, Inc. | Memory circuit having increased write margin and method therefor |
| US11482276B2 (en) * | 2020-10-30 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Limited | System and method for read speed improvement in 3T DRAM |
| US12361985B2 (en) * | 2022-09-16 | 2025-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06215580A (ja) * | 1993-01-18 | 1994-08-05 | Mitsubishi Electric Corp | メモリセル回路 |
| JPH08161890A (ja) * | 1994-12-02 | 1996-06-21 | Fujitsu Ltd | メモリセル回路及びマルチポート半導体記憶装置 |
| KR100431478B1 (ko) * | 1995-07-27 | 2004-08-25 | 텍사스 인스트루먼츠 인코포레이티드 | 고밀도2포트메모리셀 |
| US5854761A (en) | 1997-06-26 | 1998-12-29 | Sun Microsystems, Inc. | Cache memory array which stores two-way set associative data |
| US6282143B1 (en) | 1998-05-26 | 2001-08-28 | Hewlett-Packard Company | Multi-port static random access memory design for column interleaved arrays |
| US6804143B1 (en) * | 2003-04-02 | 2004-10-12 | Cogent Chipware Inc. | Write-assisted SRAM bit cell |
| JP4330396B2 (ja) * | 2003-07-24 | 2009-09-16 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP4010995B2 (ja) * | 2003-07-31 | 2007-11-21 | Ｎｅｃエレクトロニクス株式会社 | 半導体メモリ及びそのリファレンス電位発生方法 |
-
2005
- 2005-05-19 US US11/132,457 patent/US7295487B2/en not_active Expired - Lifetime
-
2006
- 2006-03-29 KR KR1020077026821A patent/KR20080009129A/ko not_active Ceased
- 2006-03-29 JP JP2008512275A patent/JP2008541333A/ja active Pending
- 2006-03-29 WO PCT/US2006/011560 patent/WO2006127117A2/en not_active Ceased
- 2006-04-10 TW TW095112657A patent/TWI336476B/zh active
-
2007
- 2007-10-01 US US11/865,495 patent/US7525867B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI630612B (zh) * | 2016-01-29 | 2018-07-21 | 台灣積體電路製造股份有限公司 | 靜態隨機存取記憶體陣列、靜態隨機存取記憶體追蹤單元以及靜態隨機存取記憶體陣列配置方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060262633A1 (en) | 2006-11-23 |
| US20080022047A1 (en) | 2008-01-24 |
| WO2006127117A3 (en) | 2009-05-07 |
| US7525867B2 (en) | 2009-04-28 |
| US7295487B2 (en) | 2007-11-13 |
| TW200643967A (en) | 2006-12-16 |
| WO2006127117A2 (en) | 2006-11-30 |
| KR20080009129A (ko) | 2008-01-24 |
| JP2008541333A (ja) | 2008-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |