TWI322475B - Capacitive devices, organic dielectric laminates, multilayer structures incorporating such devices, and methods of making thereof - Google Patents

Capacitive devices, organic dielectric laminates, multilayer structures incorporating such devices, and methods of making thereof Download PDF

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Publication number
TWI322475B
TWI322475B TW095122785A TW95122785A TWI322475B TW I322475 B TWI322475 B TW I322475B TW 095122785 A TW095122785 A TW 095122785A TW 95122785 A TW95122785 A TW 95122785A TW I322475 B TWI322475 B TW I322475B
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Taiwan
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layer
rti
dielectric
filler
film
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TW095122785A
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English (en)
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TW200715423A (en
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Sounak Banerji
G Sidney Cox
Karl Hartmann Dietz
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Du Pont
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
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    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/06—Lamination
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49155—Manufacturing circuit on or in base
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    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Description

1322475 九、發明說明： 【發明所屬之技術領域】 本技術領域有關介電質組合物及薄膜以及其用於電子電 路及組件如多層印刷電路之用途。該多層印刷電路可為硬 質、可撓性或硬質-可撓電路板、多層晶片封裝或多晶片 封裝。 本申請案與讓渡與代理人文件編號EL-〇574、el-0583、 EL-0584以及HP-0096、美國專利臨時申請號6〇/638〇〇1、 60/637813、60/637817 及 60/637816 之申請案（其分別於 2004年12月21日向美國專利商標局提出申請）有關並主張 其優先權。 【先前技術】 積體電路組件持續需要降低尺寸及增進性能。積體電路 組件之一共通部份，例如平坦電容器組件，包含自包括介 電功旎性填充材料及聚合物之組合物所形成之介電層。一 般’於電容器中使用具有高介電常數尺之介電功能性填充 ^料於相對於不含填充劑之降低電容器面積中可允許以既 定介電層厚度儲存相同量之電荷。 各種類介電層目前已利用於電路板電容器之加工，然 曰而’該介電層之介電常數受到限制且存在有某些電性的問 曰J低’丨電抵抗電壓及高滲漏電流。該兩問題限制了最 2谷盗之容量且於許多例中，限制了其在電容器内降低 介電層厚度至所需程度的能力。 · /、有連接至1C裝置30而形成習知印刷電路板25之 I12258.doc 1322475
SMT電容器50之印刷電路板25的部份剖視圖。承載訊號至 IC30之訊號線連接至使該1C裝置30連接至該電容器50之電 路跡線60。該電容器50藉成對的焊接墊52及焊接接點58之 一耦合至一電路跡線70並藉焊接墊42及焊接接點48耦合至 該電路跡線70。該電容器50藉由另一焊接墊58及電路跡線 59耦合至通孔80。此排列將該兩電容器50以訊號線串聯放 置並經由電鍍貫穿通孔80連接至接地。此習知表面安裝方 案需要使用有價值之表面不動產。再者，對焊接接點的需 求降低了可靠性並增加製造成本。 據此，本發明者期望提供可用於電子組件中形成電容器 之介電質組合物及薄膜，其具有所需之電子及物理性質， 如高介電抵抗電壓及低滲漏電流。該等介電質組合物及薄 膜尤其可用於被緊密鄰接於半導體裝置（晶片、積體電路） 之情況，以藉由因環路電感使延遲最小之狀態而快速傳遞 電荷至該半導體，使訊號發生時間加速及消除半導體切換
雜訊。本發明提供此等組合物、_、裝置及製造此等裝 置之方法。 【發明内容】 本發明有關-種形成多層結構之方法及該結構本身。一 具體例中，形成多層結構之方法包括：提供—介電質組合 物’其包括：順電性填充劑及聚合物， 咖σ物，其中該順電性填充 劑具有介於50至150之間之介電常數. 吊致，對一载體薄膜施加 該介電質組合物，因而形成一包括介 办Ά 栝；丨電層及载體薄膜層之 多層薄膜；將該多層薄膜層壓至—啻 冤路化之核心，其中該 112258.doc 1322475 多層薄膜之該介電層面向該電路化之核心；及加工前自該 介電層移除該載體薄膜層；於該介電層上施加一金屬層， 其中該電路化核心、介電層及金屬層形成一平坦電容器； 以及使該平坦電容器加工形成一多層結構。
另一具體例係有關一種形成多層結構之方法，包括：提 供一介電質組合物，其包括：順電性填充劑及聚合物，其 中該順電性填充劑具有介於50至150之間之介電常數；對 一金屬載體薄膜施加該介電質組合物，因而形成一包括介 電層及載體薄膜層之多層薄膜；將該多層薄膜層壓至一電 路化之核心’其中该多層薄膜之該介電層面向該電路化之 核心且其中該電路化核心、介電層及载體薄膜層形成一平 坦電容器，及使該平坦電容器加工形成一多層結構。 【實施方式】 將參考下列附圖詳細描述’其中相同標號代表相同元 件0
本發明有關一種介電質組合物，包括：力頃電性填充劑； 及聚合物，其中該順電性填充劑具有介電常數介於5〇及 15〇之間。本發明又有關上述組合物，其中該組合物已被 加工形成薄膜及有關包括該薄膜之電容器。 本發明又一具體例係有關 導電電極間置之上述介電胃 刷線路板。本發明又另—I 刷電路板，因而該最外側的 電層在該印刷線路板之_ & 一種電容器’其包括置於兩個 組合物以及包括該電容器之印 體例為一種包括該電容器之印 兩個導電層及該導電層間之介 兩側上形成該電容器。本發明 112258.doc 1322475 又其他具體例係有關一種包括該電容器之印刷電路，因而 藉最外層之導電層與在該導電層間之介電層在該印刷線路 板之一或兩側上形成一個以上的電容器。 又另具體例係有關一種形成嵌入式平坦電容器之方 法，包括：將上述介電質組合物塗佈在載體薄臈如聚酯 (PET)上並使該介電質組合物轉移至一電路化核心如電力 核心（如代理人文件編號EL_0583、美國專利臨時申請號 60/637,813所述，其併入本文供參考），其典型上藉由真空 層壓法、平面加壓法、熱輥法或高壓蒸氣層壓法進行。 多數具體例可構成該電路化核心，其包括電力線、接地 線及訊號嵌入式被動元件。該電路化核心之一具體例為電 力核心，其包括：至少一個嵌入式單一電容器層，其含有 至>、個嵌入式單一電容器；及至少一個平坦電容器層壓 物；其中該平坦電容器層壓物作用為低電感路徑以對該至 少一個嵌入式單一電容器提供電荷；且其中該至少一個嵌 入式單一電容器與至少一個該平坦電容器層壓物平行連 接；且其中該電力核心交互連接至至少一個訊號層。 又一具體例係有關一種形成平坦電容器之方法，包括： 提供上述介電質組合物；對一金屬層施加該介電質組合 物，因此形成金屬側及介電質側且層壓此結構至一印刷電 路板上’使該介電質組合物面向該印刷電路板。又另一具 體例係有關一種形成平坦電容器之方法，包括：提供上述 介電質組合物；對一第一金屬層施加該介電質組合物，因 此形成金屬側及介電質側；及對該介電質侧施加一第二金 112258.doc 1322475 屬層；提供一第二介電質層；層壓此第二介電質層及該第 一介電質層及其兩金屬層至一印刷電路板上，使得該第二 介電質層位於該第一介電質層與該印刷電路板之間。又其 他具體例為平坦電容器及包括由上述方法所形成之電容器 之多層結構。 利用本發明組合物所架構之電容器具有高電容密度及其 他所需的電性及物理性質。該電容器可例如安裝在印刷線 春 路板上及安裝在積體電路基材上，且可用於形成積體電路 封裝及積體被動裝置。 熟知本技藝者在配合下列圖式閱讀該等具體利之詳述描 述後，將可了解本發明上述優點及其他優點以及各種額外 具體例之效益。 依據一般操作，下列討論的圖式各種特徵未必成比例放 大。圖式中各種特徵及元件之尺寸可擴大或縮小以更清楚 說明本發明具體例。 • 本發明有關一種介電質組合物及介電薄膜，其可使印刷 電路板及積體電路封裝具有改良之電性能，如高的介電抵 抗電壓及低滲漏電流、藉由因環電感以延遲為最小之狀態 快速輸送電荷至半導體、使訊號發生時間加速及消除半導 體切換雜訊。該介電質組合物包括順電性填充劑如（但不 限於）Ti〇2、Ta2〇5、贈2、叫〇5、八12〇3及塊滑石以及聚 合物。該填充劑可為具有介電常數在1〇及15〇之間之任何 順電性填充劑。該順電性填充劑以塊體形式時具有相當高 的絕緣電阻（低滲漏電流）及崩潰電壓。 H2258.doc 1^22475 順電性填充劑 具有介電常數在10及150之間且具有高絕緣電阻及崩潰 電壓之順電性填充劑為本發明所必須。順電性填充劑在本 文定義為意指顯電荷或偏極化對電壓為線性反應之陶瓷顆 粒順電性填充劑在結晶結構中當移除施加的電場後顯現 電4的總可逆偏極化。傳統的鐵電填充劑係用以增進介電 質之η電$數，因為其一般具有比順電性填充劑高的介電 _ 吊數鐵電材料之較咼介電常數係由電荷及偏極化對電壓 之非線性反應所引起。此非線性反應為鐵電材料的主要性 質。鐵電填充劑亦顯示藉施加電場偏極化所影響之磁滯現 象，係由於該結晶結構中的非可逆電荷之故。雖然該鐵電 填充劑具有較高的介電常數，但由於該鐵電性質使其具有 主要的負電性質。鐵電材料有比順電性材料更低的絕緣電 阻（低滲漏電流）的傾向。鐵電材料亦具有較低的介電抵抗 電壓及較廣的電容隨溫度變化的傾向。為了達到對填充的 # $合物薄膜之高電容’提供三種因素：增加該填充劑粉末 之”電常if力。填充劑粉末》農度或減小經填充聚合物薄 膜厚度。鐵電填充劑特定地具有較高介電常數的優點。然 而，鐵電填充劑之該較高的介電抵抗電壓及較低的渗漏電 流使得該等電容器薄膜以較高濃度填充且包含於較薄薄膜 中且仍可達到所有所需電子性質。 可用於本發明之順電性填充劑粉末包含（但不限 於）Ti〇2、Ta2〇5、聰2、Nb2〇5 '仏〇3及塊滑石以及其混 合物。該等順電性材料呈現每密爾約1〇〇〇伏特或更大之高 I12258.doc 1322475 朋&電壓以及其塊體形式時為1〇Ε12歐姆_公分或更大之體 積電阻。典型上，該順電性填充劑粉末具有小於2微米之 平均粒徑（〇50)。一具體例中，該平均粒徑在0.1至〇_3微米 之範圍。該順電性填充劑粉末於組合物中存在之量約為5 至5 5體積〇/0。 一具體例中，該順電性填充劑為Ti〇2，其介電常數介於 50-117之間。可用於本發明之Ti〇2一實例為購自ei此 φ Pont Nemours公司之 Ti-Pure® R101。 聚合物 s亥等聚合物對本發明組合物具重要性。此聚合物之最重 要特徵之一為其分散該順電性填充劑及視情況之其他填充 劑於該組合物中之能力。可用於本發明之聚合物包含環氧 化物、丙烯酸類、聚胺基曱酸酯及聚醯亞胺。使用於本發 月之適且^酿亞胺揭不於Kanakarajan等人之US 5,298,331，其併入本文供參考。 • 一具體例中，本，發明之順電性填充劑/聚合物組合物之 該絕緣電阻及介電抵抗電壓分別為大於1〇ι〇歐姆/cm2及大 於250伏特，其中介電抵抗電壓定義為介電質可抵抗至少 3 0秒之電流。 其他成份 該組合物中可加入其他成份如鐵電陶瓷填充劑、溶劑、 分散劑、黏著劑以及本技藝已知之其他添加劑。 鐵電陶瓷填充劑可以各種量加入該組合物中以增進薄膜 電特’視特定用途而定。典型上，該等額外鐵電陶瓷填充 I12258.doc •12· 1^22475 劑存在的量為5至25體積％。大部份例中，該鐵電填充劑 將比該順電性填充劑具更低濃度。可添加至該組合物之鐵 電陶瓷填充劑之特定實例包含：通式為abo3之鈣鈦礦、 結晶欽酸鋇（BT)、鈦酸鋇鋰（BST)、锆酸鈦酸鉛（PZT)、鈦 酸鉛鑭、锆酸鈦酸鉛鑭（PLZT)、鈮酸鉛鎂（PMN)及鈦酸鈣 鋼及其混合物。填充劑可為粉狀。該等鐵電填充劑可獨立 使用或組合使用。應注意該等鐵電填充劑未符合本發明順 電性填充劑之定義。一具體例t，添加適宜鈦酸鋇填充劑 ("T4f 自 Tam Ceramics 或 Fuji Titanium)至該組合物中。此 外，該鐵電填充劑可以分散劑包覆以助於其分散於該組合 物中。可添加溶劑至該組合物中以助於分散。該溶劑只要 其可與戎聚合物及所需組合物之特徵相容則無特別限制。 v、型备劑實例包含二甲基乙醯胺及N_甲基〇比洛啶酮、脂族 醇如異丙醇、此等醇之酯類例如乙酸酯及丙酸酯；萜稀類 如松子油及a-或β_萜品醇、或其混合物；乙二醇及其酯類 如乙二醇單丁基醚及丁基溶纖素乙酸酯；卡必醇酯類如丁 基卡必醇、丁|卡必肖乙酸醋及卡必冑乙酸醋及其他適當 溶劑。 田 薄膜形成 本發月組α物可藉由提供該順電性填充劑及視情況之其 他添加填充劑’使該等填充劑與該所需聚合物混合，及藉 熟知本技藝者已知之技術如習知模嘴洗鑄技術使該組合： 洗鑄成薄膜形狀而製成"薄膜、該薄膜可形成為單層或多 層、’·。構。該薄骐可形成在一載體薄膜上如聚酯(啦)，自 112258.doc 13 1322475 其轉移至一印刷電路板上。或者該薄膜可形成於一金屬載 體薄膜如銅癌上，其維持為該介電薄膜，因其層壓至該印 刷電路板上。該薄膜亦可形成於㈣i，就此維持為該介 電層，因其層壓至該印刷電路板上，但隨後於化學钱刻步 驟中部份或完全移除…該薄膜可形成為”自由站立"薄 膜，因而該介電質組合物塗佈成平坦表面，而在層壓至二 印刷電路板之前自其釋出。該薄膜可形成為各種具體例， 包含輥狀及薄片狀。
至於形成多層架構之方法，可利用本技藝者已知之各種 方法’包含··擠出·層壓法；熱壓縮法；溶液澆鑄法；及 共擠出法。該等為可提供用以形成多層薄膜之典型但 一的方法實例。
利用本發明組合物/薄膜之電性組件形成 本發明薄膜可用以形成各種電子組件， 坦電容器層壓物， 形成。 其自本發明之一或多層 如電容器例如平 介電質組合物所 用於該組合物及薄膜 —> 6，_，645中所…g 特疋用途為美國專利截 以員之介電質組合物用以形成電容琴、@ 濾器等。因此，▲ ❿攻ms ^ 物，发 八1中，本發明有關一種介電質組合 基質:'Γ_具有本發明順電性填充劑分散於其内之聚合物 :門的人*體例中’本發明有關包括置於兩個導電電極 質組合物之電容器，其，該介電質組合物包括 二具=顺電性填充劑分散於其内之聚合物基質。又另 •本發明有關用於聚合物厚臈電容器之預燒結 112258.doc 1322475 陶瓷介電質，其包括具有本發明順電性填充劑分散於其内 之聚合物基質。本發明之該介電質組合物及薄膜之使用可 併入形成電子電路及電子組件之各種方面， 热而，本文中 描述其在形成平坦電容器層壓物之用途以代表本發明 具體例。 該平坦電容器層壓物可自可包含金屬箔_介電質金屬箔 層壓物結構之層壓物所形成，其中該介電質包括_或多層 本發明之介電薄膜。當使用多層時，該等層可為不 料。此等介電質江製成薄層供阻抗控制。 圖2為本發明一具體例之電子封裝之前視剖面圖其中 介電薄膜7000及6000之"加強（build-up)·’層已施加（典型上 為層壓）至該核心。一或多層該等加強層可包括本發明之 介電質組合物或介電薄膜。加強層可對稱排列或非對稱繞 於該動力核心周圍。該加強層可施加（層壓）為介電薄臈、 液體（簾塗）或塗佈在金屬層（例如銅箔）上之樹脂、或為強 化預浸片例如B-階段樹脂《該強化可為織布或不織布、無 機（例如玻璃）或有機（例如芳醯胺纖維）。 圖2為具有"加強"層之結構代表圖，該加強層在該加強 層表面上含有金屬化微通孔（盲孔）連接及電路。該微通孔 (9000)可藉由雷射鑿穿、微影勉刻技術、或藉經控制深度 之機械鑿穿而形成。該加強層表面及微通孔穿孔壁之最出 金屬化係藉沉積一金屬種晶層例如無電解銅層而達成。該 種晶層沉積可藉觸媒沉積在該表面上而達成，例如一具體 例中’微分散在整個加強層中之鈀、或觸媒或金屬前驅 112258.doc •15- 物。或者’該加強層可益a , 了藉金屬層（銅珀）覆蓋，微通孔鑿穿 後’於其上沉積該金屬種晶。 圖2亦為在該加強層表面上包括圖案化之導體之電子封 裝結構（多層結構）之剖面前 °』®刖視圖之代表。以在該加強層上 之鄰近金屬覆蓋層起始’導體圖案化可藉半添加劑製程 (SAP)或”蓋孔及㈣"製帛或藉圖案電鑛或藉改良的平板/ 蓋孔及蝕刻製程進行。圖2顯示在兩個加強層表面上之該 圖案化導體（S、P及〇)。 微通孔（9GGG)可在電鑛製程（“電鑛閉合"）期間填入電鑛 銅（！〇_ ;註：圖2之所有微通孔均填入銅；未充填的微 通孔將僅在該微通孔側壁及底部具有銅），填入導電油墨 或糊膏、填人非導電性材料或保留未填充以待欲施加至該 第一加強層上之第二介電加強層所填入。 其中"亥4層獨立建立且接著以一步驟層壓之垂直互連實 例（通孔填充、印刷、蝕刻、電鍍擋塊）可用於本發明。包 埋之平坦電容器及包埋之不連續電容器之組合亦可施加至 所謂的"無核心堆疊通孔封裝，，中。一種此實例為任意層中 間通孔穿孔（ALIVH)製程（獲自Matsushita)。該ALIVH製程 亦可併入平坦且不連續電容器中。另依此種堆疊通孔製程 為該B it製程®(獲自東芝公司），其中平坦及不連續電容器 可以類似方式併入。其他實例包含新開發層間連接技術 (Neo Manhattan Bump Interconnection，NMBI)(North公司） 及圓案化預浸層製程（PALAP)(Denso公司）。 圖2為在該加強層及隨後以類似方式已形成、金屬化及 112258.doc 1322475 第09512278S號專利申請案 中文說明書替換頁(98年8月）/々日 圖案化之加強層表面上包括圖案化導體之動力核心之剖面 刖視圖之代表。圖2進一步說明一平坦電容層（7〇〇〇)可併入 該加強介電質中❶微通孔可相對於底下微通孔之位置堆疊 或其可彼此交錯。堆疊的通孔須為金屬充填者。該封裝接 著可於高溫焊接步驟中連接至一覆晶（3〇〇〇)的擋塊 (4000)，且於低溫焊接步驟中連接至母板通孔焊接接點 (5000)。應了解導電性（一般為銅）特徵經由軸之導體及 Ζ-轴之通孔形成與該焊接接點之連續連接。 熟知本技藝者進一步了解隨後可形成多層加強介電層， 其中各加強層包括可應用的導電圖案及在各介電層上之貫 穿穿孔連接以及導電貫穿穿孔連接，因此形成整個電子封裝。 熟知本技藝者在閱讀該等具體例之詳細描述配合參考下 列圖是將可了解本發明各種具體例之上述優點及其他優點 及效益。 依據一般實務，圖式中之各種特徵未必成比例放大。圖 • 4中各種特徵及元件之尺寸可擴大或縮小以更清楚說明本 發明具體例》 本發明前述描述說明及敘述本發明一具體例。此外，該 揭示顯示且描述本發明之唯一選擇之較佳具體例，但應了 解本發明可用於各種其他具體例、改良及環境且可在本文 所表示之理論的本發明範圍内進行變化獲改良，對應於上 述技術及/或相關領域的技藝或知識。 上述所述具體例欲進一步解釋操作本發明之已知最佳模 式且對熟知本技藝者應可理解本發明或其他具體例以及特 112258>980814.doc •17· 1322475 定應用或使用本發明所需之特定改良。據此，該描述不欲 限制本發明於該揭示的形式中。又，附屬的申請專利範圍 欲架構成包含替代具體例，而非直接定義於該詳述描述 中。 實例
Ti〇2-填充之介電薄膜之製備 首先’ 30克的DuPont Ti-Pure® R-101二氧化鈦粉末於高 剪切混合器中分散於DriClad®環氧為主的樹脂於MEK(甲基 乙基酮）溶劑中之溶液中（來源：EIT-Endicott互連技術）。 溶液重量為211克，含160克樹脂（75.8%固體）。2-甲基咪唑 (0.208克）溶於90克MEK中並添加至該分散液中（味β坐對樹 脂重量比為0.13/100)。所得分散液黏度為19 cps及55.83% 固體含量。該分散液接著使用150微米板塗佈到刀經板塗 佈於約25微米厚Mylar®金屬箔上》乾燥的塗層厚度約為 微米；該塗層寬度約為18公分，且該塗層長度約為13 7公 分。該塗層以熱空氣吹拂乾燥。該塗層接著以矽氧釋離之 Mylar®金屬箔覆蓋，使得該捲起的經塗佈金屬箔不會黏貼 至其本身。該塗佈之金屬箔接著捲繞於7.5公分直徑的塑 膠核心上。
Ti02-填充薄膜對圖案化基材之層壓 該薄膜使用Meiki真空層壓器層壓至電路化之試驗載 體。首先移除聚酯釋離薄片。接著該薄膜層壓至該試驗載 體上’以該Ti〇2·填充之塗層面向該電路化之試驗圖案。 層壓期間’該Mylar®覆蓋層（其上塗佈有該樹脂）維持在該 112258.doc -18- 1322475 薄膜上。層壓條件：120°C，3分鐘，i45pSi。接著移除該 Mylar®覆蓋層且該Ti〇2·填充之薄膜於i95〇c熱空氣供箱中 固化2小時。 試驗載體製備·· 銅包覆之層壓物（標準環氧/玻璃FR_4介電質）使用標準印 刷線路板製程圖案化：乾膜抗蝕劑層壓至一熱輥層壓器 (HRL)上之鋼包覆之層壓物，使用具有試驗圖案之負影像 的卣化銀光工具於UV顯影機中曝光、水性顯影、酸蝕 刻、抗㈣剝除。該銅厚度為1/2盎司（約17微米）。銅跡線 約為50微米寬。該銅跡線間的空間約為“微米寬。 層壓結果： 在該圖案化基材上之層㈣膜之❹讓顯以g微米厚 之Ti〇2-填充之薄膜完全包覆該鋼特徵。該層壓㈣表面 幾近平坦。 實例編號1 • 160克聚酿胺酸（衍生自下列單體：偏苯三酸二針 (PMDA)、4,4’·氧基二酞酸軒（〇地）及i 3-雙_(4·胺基苯氧 基）苯（綱-134))與120克二甲基乙酿胺（dmac)溶劑及邮 —e⑧R_101二氧化欽粉末混合。此溶液於高速 混合機中攪拌直至粉末分散。 取添加小置額外單體直至黏度 達500泊。此溶液接著 塗層塗佈在固體表面上。此 塗層接著在170它乾燥以移 70至80%的溶劑。所形成 之薄膜接著自該表面移除。 ^ 此缚膜接著在3 5 0。(：烘箱中固 化。最終薄膜厚度為K1密爾且am 也竭且填充劑負載為26體積0/〇。 II2258.doc •19· "亥固化之一氧化鈦填充薄膜接著層壓在兩片銅笛之間。 各銅薄片厚度為36微米。該層壓加壓循環藉由使該等薄片 在25〇 C真空下保持15小時而起始。對該薄片施加⑺^丨之 壓力至少1/2小時。接著溫度升至350°C又歷時1小時。在 高溫下30分鐘後，壓力增加至352ρ8^接著關掉熱且冷卻 厚移開樣品。 使用光抗餘劑顯影及銅蝕刻，顯影一吋直徑之電容器供 試驗。該顯影之電容器電試驗顯示其在介電抵抗電壓試驗 中可通過500伏特DC。在3伏特時，通過該介電質之電阻 大於101G歐姆/cm2❶在100伏特DCi滲漏電流小於〇」微安 培/cm2。填充有鈦酸鋇（一種鐵電填充劑）之類似樣品在3伏 特具有4xl08歐姆/cm2之電阻，於介電抵抗電壓試驗中僅通 過100伏特DC且在1〇〇伏特DC具有超過1〇〇微安培/cm2之滲 漏電流。 實例編號2 18 碎 DMAC 及 18 磅 DuPont Ti-Pure® R-101 二氧化鈦粉末 之溶劑於向速混合機中搜拌。接著添加8 4碎衍生自下列單 體之聚醯胺酸：偏苯三酸二酐（PMDA)、4,4，-氧基二酞酸 酐（ODPA)及1，3-雙-(4-胺基苯氧基）苯（APB-134)。此混合 物又攪拌30分鐘。添加小量額外單體直至黏度達4〇〇泊。 此溶液接著澆鑄在銅箔之連續片材上（36微米厚）。此溶 液在190 °C乾燥至約90%固體。該塗佈之銅接著在350。(：烘 箱中乾燥1小時。最終薄膜厚度為8及12微米。該填充劑負 載為29體積％。 112258.doc -20- 1322475 第09512278^號專利申請案 中文說明書替換頁(98年8月）/«A召 狄塗佈在銅上之該經填充聚酿亞胺薄膜接著㈣至銅 消片材上。此鋼片材為25微米厚。此層壓使用最大層壓溫 度為350°C之真空高壓鋼進行。 使用光抗钱劑顯影及銅蝕刻，顯影一吋直徑之電容器供 試驗。該顯影之電容器電試驗顯示其在介電抵抗電壓試驗 中對8微米厚之介電樣品可通過25〇伏特DC。在3伏特時， 通過6玄介電質之電阻大於iq1〇歐姆/cm2。在伏特之 滲漏電流小於〇. 1微安培/cm2。
【圖式簡單說明】 圖1為具有習知領域的表面安裝技術（SMT)電容器之印刷 電路板前視圖之剖面圖。 圖2為具有本發明一具體例之嵌入式電容器裝置之印刷 電路板部份剖面圖。 【主要元件符號說明】 25 印刷電路板 30 1C裝置 42, 52 焊接墊 48, 58 焊接接點 50 SMT電容器 60, 70 電路跡線 80 通孔 3000 覆晶 4000 擋塊 5000 焊接接點 6000, 7000 介電薄膜 9000 微通孔 10000 電鍍銅 112258-980814.doc •21 ·

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  1. 第095'12278^號專利申請案 中文申請專利範圍替換本(98年8月）丨屮0 十、申請專利範圍： L 一種形成多層結構之方法，其包括： 提供-介電質組合物，其包括：順電性填充劑及聚合 物，其中該順電性填充劑具有介於5〇至15〇之間之介電 常數； 對-載體薄膜施加該介電質組合物，因而形成一包括 介電層及載體薄膜層之多層薄膜； 將n玄夕層薄膜層壓至一電路化之核心，其中該多層薄 膜之戎介電層面向該電路化之核心；及 加工前自該介電層移除該載體薄膜層； 於邊介電層上施加一金屬層’其中該電路化核心、介 電層及金屬層形成一平坦電容器；以及 使該平坦電容器加工形成一多層結構。 2. 一種形成多層結構之方法，其包括： 提供—介電質組合物，其包括：順電性填充劑及聚合 物’其中該順電性填充劑具有介於5()至15()之間之介電 對金屬載體薄膜施加該介電f組合物，因而形成_ 包括"電層及載體薄膜層之多層薄膜； 將該多層薄膜層壓至電路化之核心，其中該多層薄膜 之該介電層面向該雷说外 电路化之核心且其中該電路化核心、 "電層及載體薄膜層形成一平坦電容器；及 3. 使該平坦電容器加工形成一多層結構。 如請求項1或2中任— 項之方法’其進一步包括提供一釋 112258-980814.doc 離薄膜層並施加該釋離 忤離厚膜層至該介電層上並在層 則移除該釋離層。 盔項1或2中任—項之方法’其中該順電性填充劑存 在里為5至55體積％。 5·:凊求項1或2中任-項之方法，其中該介電質組合物進 一步包括一溶劑。 6. :請求項丨或2中任—項之方法，其中該順電性填充劑係 、自 Ti〇2、Ta205、Hf〇2、Nb2〇5、Al2〇3、塊滑石及其混 合物所組成之組群。 7. 如明求項丨或2中任—項之方法其中該順電性填充劑之 平均粒徑小於2微米。 8. 如咕求項丨或2中任一項之方法，其中該聚合物係選自環 氧化物、丙烯酸、聚胺基曱酸S旨及聚酿亞胺。 9. 如請求項丨或2中任一項之方法，其中該介電質組合物進 一步包括一鐵電填充劑。 10·如請求項9之方法，其中該鐵電填充劑係選自由通式為 AB03之鈣鈦礦、結晶鈦酸鋇（BT)、鈦酸鋇锶（BST)、鍅 酸鈦酸鉛（PZT)、鈦酸鉛鑭、锆酸鈦酸鉛鑭（PLZT)、鎚 酸錯鎂（PMN)及鈦酸鈣銅及其混合物所組成之組群。 112258-980814.doc
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TW200715423A (en) 2007-04-16
US7621041B2 (en) 2009-11-24
EP1744354A2 (en) 2007-01-17
EP1744354A3 (en) 2009-11-18
US20070006435A1 (en) 2007-01-11
KR100822624B1 (ko) 2008-04-17
KR20070007723A (ko) 2007-01-16
JP2007053347A (ja) 2007-03-01

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