TWI319635B - Shaping a phase change layer in a phase change memory cell - Google Patents
Shaping a phase change layer in a phase change memory cellInfo
- Publication number
- TWI319635B TWI319635B TW095127296A TW95127296A TWI319635B TW I319635 B TWI319635 B TW I319635B TW 095127296 A TW095127296 A TW 095127296A TW 95127296 A TW95127296 A TW 95127296A TW I319635 B TWI319635 B TW I319635B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase change
- shaping
- memory cell
- change memory
- change layer
- Prior art date
Links
- 238000007493 shaping process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/215,403 US20070045606A1 (en) | 2005-08-30 | 2005-08-30 | Shaping a phase change layer in a phase change memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200709480A TW200709480A (en) | 2007-03-01 |
TWI319635B true TWI319635B (en) | 2010-01-11 |
Family
ID=37802795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095127296A TWI319635B (en) | 2005-08-30 | 2006-07-26 | Shaping a phase change layer in a phase change memory cell |
Country Status (5)
Country | Link |
---|---|
US (2) | US20070045606A1 (zh) |
JP (1) | JP5020570B2 (zh) |
KR (1) | KR100808365B1 (zh) |
CN (1) | CN100505363C (zh) |
TW (1) | TWI319635B (zh) |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7135696B2 (en) * | 2004-09-24 | 2006-11-14 | Intel Corporation | Phase change memory with damascene memory element |
EP1729355B1 (en) * | 2005-06-03 | 2008-11-19 | STMicroelectronics S.r.l. | Self-aligned process for manufacturing phase change memory cells |
US8237140B2 (en) | 2005-06-17 | 2012-08-07 | Macronix International Co., Ltd. | Self-aligned, embedded phase change RAM |
US7696503B2 (en) | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
US7494849B2 (en) * | 2005-11-03 | 2009-02-24 | Cswitch Inc. | Methods for fabricating multi-terminal phase change devices |
US7394088B2 (en) | 2005-11-15 | 2008-07-01 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
US7414258B2 (en) * | 2005-11-16 | 2008-08-19 | Macronix International Co., Ltd. | Spacer electrode small pin phase change memory RAM and manufacturing method |
US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
US7829876B2 (en) | 2005-11-21 | 2010-11-09 | Macronix International Co., Ltd. | Vacuum cell thermal isolation for a phase change memory device |
US7642539B2 (en) | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
US7741636B2 (en) | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7456421B2 (en) | 2006-01-30 | 2008-11-25 | Macronix International Co., Ltd. | Vertical side wall active pin structures in a phase change memory and manufacturing methods |
US7956358B2 (en) | 2006-02-07 | 2011-06-07 | Macronix International Co., Ltd. | I-shaped phase change memory cell with thermal isolation |
US20070215987A1 (en) * | 2006-03-15 | 2007-09-20 | Schwerin Ulrike G | Method for forming a memory device and memory device |
US7910907B2 (en) | 2006-03-15 | 2011-03-22 | Macronix International Co., Ltd. | Manufacturing method for pipe-shaped electrode phase change memory |
US7928421B2 (en) * | 2006-04-21 | 2011-04-19 | Macronix International Co., Ltd. | Phase change memory cell with vacuum spacer |
US7608848B2 (en) | 2006-05-09 | 2009-10-27 | Macronix International Co., Ltd. | Bridge resistance random access memory device with a singular contact structure |
US7732800B2 (en) | 2006-05-30 | 2010-06-08 | Macronix International Co., Ltd. | Resistor random access memory cell with L-shaped electrode |
US7772581B2 (en) * | 2006-09-11 | 2010-08-10 | Macronix International Co., Ltd. | Memory device having wide area phase change element and small electrode contact area |
US7616472B2 (en) * | 2006-10-23 | 2009-11-10 | Macronix International Co., Ltd. | Method and apparatus for non-volatile multi-bit memory |
US8017930B2 (en) * | 2006-12-21 | 2011-09-13 | Qimonda Ag | Pillar phase change memory cell |
US8426967B2 (en) * | 2007-01-05 | 2013-04-23 | International Business Machines Corporation | Scaled-down phase change memory cell in recessed heater |
US7663135B2 (en) * | 2007-01-31 | 2010-02-16 | Macronix International Co., Ltd. | Memory cell having a side electrode contact |
US7619311B2 (en) | 2007-02-02 | 2009-11-17 | Macronix International Co., Ltd. | Memory cell device with coplanar electrode surface and method |
US8138028B2 (en) | 2007-02-12 | 2012-03-20 | Macronix International Co., Ltd | Method for manufacturing a phase change memory device with pillar bottom electrode |
US7884343B2 (en) | 2007-02-14 | 2011-02-08 | Macronix International Co., Ltd. | Phase change memory cell with filled sidewall memory element and method for fabricating the same |
US7619237B2 (en) | 2007-02-21 | 2009-11-17 | Macronix International Co., Ltd. | Programmable resistive memory cell with self-forming gap |
US7956344B2 (en) | 2007-02-27 | 2011-06-07 | Macronix International Co., Ltd. | Memory cell with memory element contacting ring-shaped upper end of bottom electrode |
TWI419321B (zh) * | 2007-04-03 | 2013-12-11 | Marvell World Trade Ltd | 記憶體裝置及其製造方法 |
US7709835B2 (en) * | 2007-04-03 | 2010-05-04 | Marvell World Trade Ltd. | Method to form high efficiency GST cell using a double heater cut |
US7786461B2 (en) | 2007-04-03 | 2010-08-31 | Macronix International Co., Ltd. | Memory structure with reduced-size memory element between memory material portions |
US7599211B2 (en) * | 2007-04-10 | 2009-10-06 | Infineon Technologies Ag | Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit |
US20080253165A1 (en) * | 2007-04-10 | 2008-10-16 | Philippe Blanchard | Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System |
US7755076B2 (en) | 2007-04-17 | 2010-07-13 | Macronix International Co., Ltd. | 4F2 self align side wall active phase change memory |
JP5669338B2 (ja) * | 2007-04-26 | 2015-02-12 | 株式会社日立製作所 | 半導体装置 |
TWI336128B (en) * | 2007-05-31 | 2011-01-11 | Ind Tech Res Inst | Phase change memory devices and fabrication methods thereof |
TWI402980B (zh) | 2007-07-20 | 2013-07-21 | Macronix Int Co Ltd | 具有緩衝層之電阻式記憶結構 |
US7884342B2 (en) | 2007-07-31 | 2011-02-08 | Macronix International Co., Ltd. | Phase change memory bridge cell |
DE102007035857A1 (de) * | 2007-07-31 | 2009-02-05 | Qimonda Ag | Verfahren zum Herstellen einer Speichervorrichtung, Speichervorrichtung, Zelle, integrierte Schaltung, Speichermodul und Computersystem |
KR20090013419A (ko) * | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
US9018615B2 (en) * | 2007-08-03 | 2015-04-28 | Macronix International Co., Ltd. | Resistor random access memory structure having a defined small area of electrical contact |
US7642125B2 (en) | 2007-09-14 | 2010-01-05 | Macronix International Co., Ltd. | Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
US8178386B2 (en) | 2007-09-14 | 2012-05-15 | Macronix International Co., Ltd. | Phase change memory cell array with self-converged bottom electrode and method for manufacturing |
US7919766B2 (en) | 2007-10-22 | 2011-04-05 | Macronix International Co., Ltd. | Method for making self aligning pillar memory cell device |
US20090111263A1 (en) * | 2007-10-26 | 2009-04-30 | Kuan-Neng Chen | Method of Forming Programmable Via Devices |
US7718990B2 (en) * | 2007-12-04 | 2010-05-18 | Ovonyx, Inc. | Active material devices with containment layer |
KR101435001B1 (ko) * | 2007-12-20 | 2014-08-29 | 삼성전자주식회사 | 상변화 메모리 및 그 제조 방법 |
US8217380B2 (en) * | 2008-01-09 | 2012-07-10 | International Business Machines Corporation | Polysilicon emitter BJT access device for PCRAM |
US7879643B2 (en) | 2008-01-18 | 2011-02-01 | Macronix International Co., Ltd. | Memory cell with memory element contacting an inverted T-shaped bottom electrode |
US7879645B2 (en) | 2008-01-28 | 2011-02-01 | Macronix International Co., Ltd. | Fill-in etching free pore device |
US8158965B2 (en) * | 2008-02-05 | 2012-04-17 | Macronix International Co., Ltd. | Heating center PCRAM structure and methods for making |
KR20090097362A (ko) * | 2008-03-11 | 2009-09-16 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성 방법 |
KR101490429B1 (ko) * | 2008-03-11 | 2015-02-11 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성 방법 |
US8084842B2 (en) | 2008-03-25 | 2011-12-27 | Macronix International Co., Ltd. | Thermally stabilized electrode structure |
WO2009122349A2 (en) * | 2008-04-01 | 2009-10-08 | Nxp B.V. | Vertical phase change memory cell |
US7701750B2 (en) | 2008-05-08 | 2010-04-20 | Macronix International Co., Ltd. | Phase change device having two or more substantial amorphous regions in high resistance state |
US8415651B2 (en) | 2008-06-12 | 2013-04-09 | Macronix International Co., Ltd. | Phase change memory cell having top and bottom sidewall contacts |
US7932506B2 (en) * | 2008-07-22 | 2011-04-26 | Macronix International Co., Ltd. | Fully self-aligned pore-type memory cell having diode access device |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
US8623697B2 (en) * | 2008-12-31 | 2014-01-07 | Micron Technology, Inc. | Avoiding degradation of chalcogenide material during definition of multilayer stack structure |
US8084760B2 (en) | 2009-04-20 | 2011-12-27 | Macronix International Co., Ltd. | Ring-shaped electrode and manufacturing method for same |
US8173987B2 (en) | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US8829646B2 (en) * | 2009-04-27 | 2014-09-09 | Macronix International Co., Ltd. | Integrated circuit 3D memory array and manufacturing method |
JP2010287744A (ja) * | 2009-06-11 | 2010-12-24 | Elpida Memory Inc | 固体メモリ、データ処理システム及びデータ処理装置 |
US8110822B2 (en) | 2009-07-15 | 2012-02-07 | Macronix International Co., Ltd. | Thermal protect PCRAM structure and methods for making |
JP2011066135A (ja) * | 2009-09-16 | 2011-03-31 | Elpida Memory Inc | 相変化メモリ装置の製造方法 |
CN102237492B (zh) * | 2010-04-29 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器单元形成方法 |
US8729521B2 (en) | 2010-05-12 | 2014-05-20 | Macronix International Co., Ltd. | Self aligned fin-type programmable memory cell |
US8310864B2 (en) | 2010-06-15 | 2012-11-13 | Macronix International Co., Ltd. | Self-aligned bit line under word line memory array |
US9082954B2 (en) | 2010-09-24 | 2015-07-14 | Macronix International Co., Ltd. | PCRAM with current flowing laterally relative to axis defined by electrodes |
US8395935B2 (en) | 2010-10-06 | 2013-03-12 | Macronix International Co., Ltd. | Cross-point self-aligned reduced cell size phase change memory |
JP5648406B2 (ja) * | 2010-10-13 | 2015-01-07 | ソニー株式会社 | 不揮発性メモリ素子及び不揮発性メモリ素子群、並びに、これらの製造方法 |
US8467238B2 (en) | 2010-11-15 | 2013-06-18 | Macronix International Co., Ltd. | Dynamic pulse operation for phase change memory |
US8497182B2 (en) | 2011-04-19 | 2013-07-30 | Macronix International Co., Ltd. | Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory |
US8987700B2 (en) | 2011-12-02 | 2015-03-24 | Macronix International Co., Ltd. | Thermally confined electrode for programmable resistance memory |
US9318699B2 (en) | 2012-01-18 | 2016-04-19 | Micron Technology, Inc. | Resistive memory cell structures and methods |
US8629559B2 (en) | 2012-02-09 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress reduction apparatus with an inverted cup-shaped layer |
US9240548B2 (en) * | 2012-05-31 | 2016-01-19 | Micron Technology, Inc. | Memory arrays and methods of forming an array of memory cells |
US8981330B2 (en) | 2012-07-16 | 2015-03-17 | Macronix International Co., Ltd. | Thermally-confined spacer PCM cells |
US8841649B2 (en) | 2012-08-31 | 2014-09-23 | Micron Technology, Inc. | Three dimensional memory array architecture |
US8729523B2 (en) | 2012-08-31 | 2014-05-20 | Micron Technology, Inc. | Three dimensional memory array architecture |
US8895402B2 (en) * | 2012-09-03 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Fin-type memory |
US9214351B2 (en) | 2013-03-12 | 2015-12-15 | Macronix International Co., Ltd. | Memory architecture of thin film 3D array |
US8916414B2 (en) | 2013-03-13 | 2014-12-23 | Macronix International Co., Ltd. | Method for making memory cell by melting phase change material in confined space |
US9172036B2 (en) | 2013-11-22 | 2015-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Top electrode blocking layer for RRAM device |
US9336879B2 (en) | 2014-01-24 | 2016-05-10 | Macronix International Co., Ltd. | Multiple phase change materials in an integrated circuit for system on a chip application |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
JP2015065459A (ja) * | 2014-11-17 | 2015-04-09 | スパンション エルエルシー | 不揮発性メモリ用可変抵抗およびその製造方法並びに不揮発性メモリ |
US9793323B1 (en) | 2016-07-11 | 2017-10-17 | Macronix International Co., Ltd. | Phase change memory with high endurance |
CN108630806A (zh) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
US10461125B2 (en) | 2017-08-29 | 2019-10-29 | Micron Technology, Inc. | Three dimensional memory arrays |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3573757A (en) * | 1968-11-04 | 1971-04-06 | Energy Conversion Devices Inc | Memory matrix having serially connected threshold and memory switch devices at each cross-over point |
US4660175A (en) * | 1985-07-08 | 1987-04-21 | Energy Conversion Devices, Inc. | Data storage device having novel barrier players encapsulating the data storage medium |
US5825046A (en) * | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US5912839A (en) * | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
JP2001060672A (ja) * | 1999-08-20 | 2001-03-06 | Mitsubishi Electric Corp | エッチング方法およびエッチングマスク |
US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
EP1469532B1 (en) * | 2003-04-16 | 2009-08-26 | STMicroelectronics S.r.l. | Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured |
EP1318552A1 (en) * | 2001-12-05 | 2003-06-11 | STMicroelectronics S.r.l. | Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
DE60137788D1 (de) * | 2001-12-27 | 2009-04-09 | St Microelectronics Srl | Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix |
US6867064B2 (en) * | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
US7151273B2 (en) * | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6930913B2 (en) * | 2002-02-20 | 2005-08-16 | Stmicroelectronics S.R.L. | Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
US6891747B2 (en) * | 2002-02-20 | 2005-05-10 | Stmicroelectronics S.R.L. | Phase change memory cell and manufacturing method thereof using minitrenches |
US6579760B1 (en) * | 2002-03-28 | 2003-06-17 | Macronix International Co., Ltd. | Self-aligned, programmable phase change memory |
US6855975B2 (en) * | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
KR100437458B1 (ko) | 2002-05-07 | 2004-06-23 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
US7163837B2 (en) * | 2002-08-29 | 2007-01-16 | Micron Technology, Inc. | Method of forming a resistance variable memory element |
US20050158950A1 (en) * | 2002-12-19 | 2005-07-21 | Matrix Semiconductor, Inc. | Non-volatile memory cell comprising a dielectric layer and a phase change material in series |
DE60331629D1 (de) * | 2003-01-15 | 2010-04-22 | St Microelectronics Srl | Verfahren zur Herstellung einer Speichervorrichtung, insbesondere eines Phasenwechselspeichers, mit einem Silizidierungsschritt |
KR100543445B1 (ko) * | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
US6813178B2 (en) * | 2003-03-12 | 2004-11-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
JP4424464B2 (ja) * | 2003-03-26 | 2010-03-03 | セイコーエプソン株式会社 | 強誘電体メモリの製造方法 |
KR20040093623A (ko) * | 2003-04-30 | 2004-11-06 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
EP1475848B1 (en) * | 2003-05-07 | 2006-12-20 | STMicroelectronics S.r.l. | Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells |
JP2005051122A (ja) * | 2003-07-30 | 2005-02-24 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
US7399655B2 (en) * | 2003-08-04 | 2008-07-15 | Ovonyx, Inc. | Damascene conductive line for contacting an underlying memory element |
KR100558491B1 (ko) * | 2003-10-28 | 2006-03-07 | 삼성전자주식회사 | 상 변화 기억소자 및 그 제조방법 |
US7153721B2 (en) * | 2004-01-28 | 2006-12-26 | Micron Technology, Inc. | Resistance variable memory elements based on polarized silver-selenide network growth |
US7098068B2 (en) * | 2004-03-10 | 2006-08-29 | Micron Technology, Inc. | Method of forming a chalcogenide material containing device |
US7190048B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
US7259038B2 (en) * | 2005-01-19 | 2007-08-21 | Sandisk Corporation | Forming nonvolatile phase change memory cell having a reduced thermal contact area |
US7488967B2 (en) * | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
JP2007042804A (ja) * | 2005-08-02 | 2007-02-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7332735B2 (en) * | 2005-08-02 | 2008-02-19 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
-
2005
- 2005-08-30 US US11/215,403 patent/US20070045606A1/en not_active Abandoned
-
2006
- 2006-07-26 TW TW095127296A patent/TWI319635B/zh active
- 2006-08-25 JP JP2006229504A patent/JP5020570B2/ja not_active Expired - Fee Related
- 2006-08-29 CN CNB2006101290219A patent/CN100505363C/zh active Active
- 2006-08-30 KR KR1020060083032A patent/KR100808365B1/ko active IP Right Grant
-
2012
- 2012-07-26 US US13/558,423 patent/US20120298946A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1925186A (zh) | 2007-03-07 |
JP5020570B2 (ja) | 2012-09-05 |
CN100505363C (zh) | 2009-06-24 |
JP2007067403A (ja) | 2007-03-15 |
US20120298946A1 (en) | 2012-11-29 |
KR20070026157A (ko) | 2007-03-08 |
US20070045606A1 (en) | 2007-03-01 |
TW200709480A (en) | 2007-03-01 |
KR100808365B1 (ko) | 2008-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI319635B (en) | Shaping a phase change layer in a phase change memory cell | |
EP1743383A4 (en) | MEMORY CELL SOI MAGNETORESISTANTE | |
TWI319908B (en) | Storage element | |
HK1094915A1 (en) | Multilayer solar cell | |
GB2442162B (en) | Technique to write to a non-volatile memory | |
ZA200711166B (en) | A solar cell interconnection process | |
GB0721940D0 (en) | Memory cells | |
TWI368316B (en) | Multi-trapping layer flash memory cell | |
EP2193682A4 (en) | SELECTING A CELL ASSOCIATED WITH RADIO ACCESS TECHNOLOGY | |
GB0414869D0 (en) | Shape memory material actuation | |
IL202708A0 (en) | Anti-fuse memory cell | |
GB0601186D0 (en) | Magnetoresistive memory element having a stacked structure | |
IL183406A0 (en) | Priority scheme for executing commands in memories | |
EP1870942A4 (en) | SOLAR CELL | |
TWI372459B (en) | Integrated memory cell array | |
GB2417588B (en) | Memory cell | |
TWI350455B (en) | Memory micro-tiling | |
EP2039212A4 (en) | ACCESS CONTROL IN A CELLULAR SYSTEM | |
GB2434429B (en) | Perforating charge for use in a well | |
ZA200804743B (en) | Photovoltaic cell | |
GB0608406D0 (en) | Creating references in a scoped memory system | |
TWI346372B (en) | Phase change memory array and fabrications thereof | |
ZA200802622B (en) | Genes involved in asymmetric cell division | |
GB0618045D0 (en) | Non-volatile memory bitcell | |
GB0513415D0 (en) | Dye-sensitised solar cells |