TWI316277B - - Google Patents

Info

Publication number
TWI316277B
TWI316277B TW092108656A TW92108656A TWI316277B TW I316277 B TWI316277 B TW I316277B TW 092108656 A TW092108656 A TW 092108656A TW 92108656 A TW92108656 A TW 92108656A TW I316277 B TWI316277 B TW I316277B
Authority
TW
Taiwan
Application number
TW092108656A
Other versions
TW200400582A (en
Inventor
Akita Katsushi
Yamashita Masashi
Kiyama Makoto
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200400582A publication Critical patent/TW200400582A/zh
Application granted granted Critical
Publication of TWI316277B publication Critical patent/TWI316277B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
TW092108656A 2002-04-30 2003-04-15 Voltage tolerance measuring method of semiconductor epi-wafer and semiconductor epi-wafer TW200400582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002128681A JP4126953B2 (ja) 2002-04-30 2002-04-30 半導体エピタキシャルウエハの耐圧測定方法

Publications (2)

Publication Number Publication Date
TW200400582A TW200400582A (en) 2004-01-01
TWI316277B true TWI316277B (zh) 2009-10-21

Family

ID=29397272

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092108656A TW200400582A (en) 2002-04-30 2003-04-15 Voltage tolerance measuring method of semiconductor epi-wafer and semiconductor epi-wafer

Country Status (7)

Country Link
US (1) US7195937B2 (zh)
EP (1) EP1503408A4 (zh)
JP (1) JP4126953B2 (zh)
KR (1) KR100955368B1 (zh)
CN (1) CN1295772C (zh)
TW (1) TW200400582A (zh)
WO (1) WO2003094223A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0720339U (ja) * 1993-05-12 1995-04-11 日本鋪道株式会社 発生土処理装置
CN101388353B (zh) * 2007-09-10 2010-05-19 中芯国际集成电路制造(上海)有限公司 监测晶圆击穿电压稳定性的方法
JP2010272577A (ja) 2009-05-19 2010-12-02 Takehisa Sasaki 放射線検出素子、及び、放射線検出装置
CN103364694B (zh) * 2012-03-26 2016-06-01 上海华虹宏力半导体制造有限公司 对超测量源表范围的漏源击穿电压进行测量的装置及方法
CN103389443B (zh) * 2012-05-07 2015-12-09 无锡华润上华科技有限公司 绝缘体上硅mos器件动态击穿电压的测试方法
JP5913272B2 (ja) * 2013-12-11 2016-04-27 誉田 雄久 放射線検出素子、及び、放射線検出装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131880A (en) * 1978-04-03 1979-10-13 Nec Corp Manufacture of schottky junction element
JP2520870B2 (ja) * 1985-08-13 1996-07-31 沖電気工業株式会社 半導体装置の製造方法
JPH03166745A (ja) * 1989-11-27 1991-07-18 Nippon Mining Co Ltd 電界効果トランジスタの評価方法
JP3493205B2 (ja) * 1993-02-05 2004-02-03 住友電気工業株式会社 電界効果トランジスタおよびその製造方法
JP3206621B2 (ja) * 1993-07-28 2001-09-10 住友電気工業株式会社 電界効果トランジスタ
US5535231A (en) * 1994-11-08 1996-07-09 Samsung Electronics Co., Ltd. Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector
JP3156620B2 (ja) * 1997-02-12 2001-04-16 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3127874B2 (ja) * 1998-02-12 2001-01-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
US6177322B1 (en) * 1998-10-23 2001-01-23 Advanced Mictro Devices, Inc. High voltage transistor with high gated diode breakdown voltage

Also Published As

Publication number Publication date
JP4126953B2 (ja) 2008-07-30
EP1503408A4 (en) 2009-08-12
US7195937B2 (en) 2007-03-27
US20050118736A1 (en) 2005-06-02
WO2003094223A1 (fr) 2003-11-13
CN1295772C (zh) 2007-01-17
JP2003324137A (ja) 2003-11-14
KR20040101987A (ko) 2004-12-03
KR100955368B1 (ko) 2010-04-29
CN1547767A (zh) 2004-11-17
EP1503408A1 (en) 2005-02-02
TW200400582A (en) 2004-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees