TWI313787B - Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device - Google Patents

Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device Download PDF

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Publication number
TWI313787B
TWI313787B TW094141932A TW94141932A TWI313787B TW I313787 B TWI313787 B TW I313787B TW 094141932 A TW094141932 A TW 094141932A TW 94141932 A TW94141932 A TW 94141932A TW I313787 B TWI313787 B TW I313787B
Authority
TW
Taiwan
Prior art keywords
pattern
isolation
terminal
adjacent
extension
Prior art date
Application number
TW094141932A
Other languages
English (en)
Chinese (zh)
Other versions
TW200632540A (en
Inventor
Kazuhisa Ogawa
Satomi Nakamura
Kazuyoshi Kawahara
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200632540A publication Critical patent/TW200632540A/zh
Application granted granted Critical
Publication of TWI313787B publication Critical patent/TWI313787B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
TW094141932A 2004-11-30 2005-11-29 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device TWI313787B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004345908A JP4479486B2 (ja) 2004-11-30 2004-11-30 マスクパターンの補正方法

Publications (2)

Publication Number Publication Date
TW200632540A TW200632540A (en) 2006-09-16
TWI313787B true TWI313787B (en) 2009-08-21

Family

ID=36596294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141932A TWI313787B (en) 2004-11-30 2005-11-29 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device

Country Status (5)

Country Link
US (2) US7767364B2 (https=)
JP (1) JP4479486B2 (https=)
KR (1) KR101083957B1 (https=)
CN (1) CN1800985B (https=)
TW (1) TWI313787B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100499069C (zh) * 2006-01-13 2009-06-10 中芯国际集成电路制造(上海)有限公司 使用所选掩模的双大马士革铜工艺
US20070292771A1 (en) * 2006-06-20 2007-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing intra-field critical dimension uniformity using a sacrificial twin mask
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
JP4333770B2 (ja) 2007-04-12 2009-09-16 ソニー株式会社 マスクパターン作成プログラム、半導体製造方法、マスクパターン作成方法および半導体設計プログラム
JP2010066460A (ja) * 2008-09-10 2010-03-25 Toshiba Corp パターン補正方法およびパターン補正プログラム
TWI461832B (zh) * 2011-01-13 2014-11-21 Inotera Memories Inc 製造光罩的方法
JP2014049467A (ja) * 2012-08-29 2014-03-17 Canon Inc 描画装置、それを用いた物品の製造方法
CN103631095B (zh) * 2013-12-05 2015-11-25 中山新诺科技有限公司 一种拼贴法制备单片集成电容触摸屏的动态电子掩膜板系统
CN110221515B (zh) * 2018-03-02 2023-01-20 中芯国际集成电路制造(上海)有限公司 光学邻近修正方法及掩膜版的制作方法
US11237485B2 (en) * 2020-01-21 2022-02-01 Applied Materials, Inc. System, software application, and method for lithography stitching
CN112987487B (zh) * 2021-02-22 2024-03-08 上海华力集成电路制造有限公司 具有不同图形密度端的图形结构的opc修正方法
CN114460806B (zh) * 2022-01-28 2026-01-30 上海华力集成电路制造有限公司 Opc修正方法
US12326657B2 (en) * 2022-06-16 2025-06-10 Skybull Technology Co., Ltd. Chip deviation correction method for maskless exposure machine
US20240094999A1 (en) * 2022-09-20 2024-03-21 International Business Machines Corporation Automatically replacing code in program that manipulates two vectors of data to improve execution time

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100390A (ja) 1999-09-27 2001-04-13 Toshiba Microelectronics Corp 露光用マスクのパターン補正方法
CN1661480A (zh) * 1999-11-08 2005-08-31 松下电器产业株式会社 一种图案形成方法
JP4064617B2 (ja) 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
CN1285967C (zh) * 2002-01-09 2006-11-22 联华电子股份有限公司 利用光学邻近效应修正多边形光罩特征图案的方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP4330524B2 (ja) * 2004-12-28 2009-09-16 富士通マイクロエレクトロニクス株式会社 パターンデータ補正方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW200632540A (en) 2006-09-16
CN1800985A (zh) 2006-07-12
US7767364B2 (en) 2010-08-03
CN1800985B (zh) 2010-06-16
US7799510B2 (en) 2010-09-21
KR101083957B1 (ko) 2011-11-16
US20060134532A1 (en) 2006-06-22
JP2006154404A (ja) 2006-06-15
JP4479486B2 (ja) 2010-06-09
KR20060060623A (ko) 2006-06-05
US20100038798A1 (en) 2010-02-18

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