KR101083957B1 - 마스크 패턴의 보정 방법 - Google Patents

마스크 패턴의 보정 방법 Download PDF

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Publication number
KR101083957B1
KR101083957B1 KR1020050115451A KR20050115451A KR101083957B1 KR 101083957 B1 KR101083957 B1 KR 101083957B1 KR 1020050115451 A KR1020050115451 A KR 1020050115451A KR 20050115451 A KR20050115451 A KR 20050115451A KR 101083957 B1 KR101083957 B1 KR 101083957B1
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South Korea
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pattern
adjacent
isolated
isolation
extending
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Korean (ko)
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KR20060060623A (ko
Inventor
가즈히사 오가와
사또미 나까무라
가즈요시 가와하라
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소니 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
KR1020050115451A 2004-11-30 2005-11-30 마스크 패턴의 보정 방법 Expired - Fee Related KR101083957B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004345908A JP4479486B2 (ja) 2004-11-30 2004-11-30 マスクパターンの補正方法
JPJP-P-2004-00345908 2004-11-30

Publications (2)

Publication Number Publication Date
KR20060060623A KR20060060623A (ko) 2006-06-05
KR101083957B1 true KR101083957B1 (ko) 2011-11-16

Family

ID=36596294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050115451A Expired - Fee Related KR101083957B1 (ko) 2004-11-30 2005-11-30 마스크 패턴의 보정 방법

Country Status (5)

Country Link
US (2) US7767364B2 (https=)
JP (1) JP4479486B2 (https=)
KR (1) KR101083957B1 (https=)
CN (1) CN1800985B (https=)
TW (1) TWI313787B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100499069C (zh) * 2006-01-13 2009-06-10 中芯国际集成电路制造(上海)有限公司 使用所选掩模的双大马士革铜工艺
US20070292771A1 (en) * 2006-06-20 2007-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing intra-field critical dimension uniformity using a sacrificial twin mask
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
JP4333770B2 (ja) 2007-04-12 2009-09-16 ソニー株式会社 マスクパターン作成プログラム、半導体製造方法、マスクパターン作成方法および半導体設計プログラム
JP2010066460A (ja) * 2008-09-10 2010-03-25 Toshiba Corp パターン補正方法およびパターン補正プログラム
TWI461832B (zh) * 2011-01-13 2014-11-21 Inotera Memories Inc 製造光罩的方法
JP2014049467A (ja) * 2012-08-29 2014-03-17 Canon Inc 描画装置、それを用いた物品の製造方法
CN103631095B (zh) * 2013-12-05 2015-11-25 中山新诺科技有限公司 一种拼贴法制备单片集成电容触摸屏的动态电子掩膜板系统
CN110221515B (zh) * 2018-03-02 2023-01-20 中芯国际集成电路制造(上海)有限公司 光学邻近修正方法及掩膜版的制作方法
US11237485B2 (en) * 2020-01-21 2022-02-01 Applied Materials, Inc. System, software application, and method for lithography stitching
CN112987487B (zh) * 2021-02-22 2024-03-08 上海华力集成电路制造有限公司 具有不同图形密度端的图形结构的opc修正方法
CN114460806B (zh) * 2022-01-28 2026-01-30 上海华力集成电路制造有限公司 Opc修正方法
US12326657B2 (en) * 2022-06-16 2025-06-10 Skybull Technology Co., Ltd. Chip deviation correction method for maskless exposure machine
US20240094999A1 (en) * 2022-09-20 2024-03-21 International Business Machines Corporation Automatically replacing code in program that manipulates two vectors of data to improve execution time

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040081899A1 (en) 1999-11-08 2004-04-29 Matsushita Electric Industrial Co., Ltd. Patterning method using a photomask

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100390A (ja) 1999-09-27 2001-04-13 Toshiba Microelectronics Corp 露光用マスクのパターン補正方法
JP4064617B2 (ja) 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
CN1285967C (zh) * 2002-01-09 2006-11-22 联华电子股份有限公司 利用光学邻近效应修正多边形光罩特征图案的方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP4330524B2 (ja) * 2004-12-28 2009-09-16 富士通マイクロエレクトロニクス株式会社 パターンデータ補正方法及び半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040081899A1 (en) 1999-11-08 2004-04-29 Matsushita Electric Industrial Co., Ltd. Patterning method using a photomask

Also Published As

Publication number Publication date
TW200632540A (en) 2006-09-16
CN1800985A (zh) 2006-07-12
US7767364B2 (en) 2010-08-03
CN1800985B (zh) 2010-06-16
US7799510B2 (en) 2010-09-21
US20060134532A1 (en) 2006-06-22
JP2006154404A (ja) 2006-06-15
TWI313787B (en) 2009-08-21
JP4479486B2 (ja) 2010-06-09
KR20060060623A (ko) 2006-06-05
US20100038798A1 (en) 2010-02-18

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