JP4479486B2 - マスクパターンの補正方法 - Google Patents

マスクパターンの補正方法 Download PDF

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Publication number
JP4479486B2
JP4479486B2 JP2004345908A JP2004345908A JP4479486B2 JP 4479486 B2 JP4479486 B2 JP 4479486B2 JP 2004345908 A JP2004345908 A JP 2004345908A JP 2004345908 A JP2004345908 A JP 2004345908A JP 4479486 B2 JP4479486 B2 JP 4479486B2
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JP
Japan
Prior art keywords
pattern
isolated
adjacent
extends
mask
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Expired - Fee Related
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JP2004345908A
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English (en)
Japanese (ja)
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JP2006154404A (ja
JP2006154404A5 (https=
Inventor
和久 小川
聡美 中村
和義 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2004345908A priority Critical patent/JP4479486B2/ja
Priority to US11/287,826 priority patent/US7767364B2/en
Priority to TW094141932A priority patent/TWI313787B/zh
Priority to CN2005101373931A priority patent/CN1800985B/zh
Priority to KR1020050115451A priority patent/KR101083957B1/ko
Publication of JP2006154404A publication Critical patent/JP2006154404A/ja
Publication of JP2006154404A5 publication Critical patent/JP2006154404A5/ja
Priority to US12/603,055 priority patent/US7799510B2/en
Application granted granted Critical
Publication of JP4479486B2 publication Critical patent/JP4479486B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2004345908A 2004-11-30 2004-11-30 マスクパターンの補正方法 Expired - Fee Related JP4479486B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004345908A JP4479486B2 (ja) 2004-11-30 2004-11-30 マスクパターンの補正方法
US11/287,826 US7767364B2 (en) 2004-11-30 2005-11-28 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device
TW094141932A TWI313787B (en) 2004-11-30 2005-11-29 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device
KR1020050115451A KR101083957B1 (ko) 2004-11-30 2005-11-30 마스크 패턴의 보정 방법
CN2005101373931A CN1800985B (zh) 2004-11-30 2005-11-30 修正掩模图案的方法、光掩模和半导体器件及其制造方法
US12/603,055 US7799510B2 (en) 2004-11-30 2009-10-21 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004345908A JP4479486B2 (ja) 2004-11-30 2004-11-30 マスクパターンの補正方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010035904A Division JP4840517B2 (ja) 2010-02-22 2010-02-22 露光方法、並びに、半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006154404A JP2006154404A (ja) 2006-06-15
JP2006154404A5 JP2006154404A5 (https=) 2007-07-12
JP4479486B2 true JP4479486B2 (ja) 2010-06-09

Family

ID=36596294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004345908A Expired - Fee Related JP4479486B2 (ja) 2004-11-30 2004-11-30 マスクパターンの補正方法

Country Status (5)

Country Link
US (2) US7767364B2 (https=)
JP (1) JP4479486B2 (https=)
KR (1) KR101083957B1 (https=)
CN (1) CN1800985B (https=)
TW (1) TWI313787B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100499069C (zh) * 2006-01-13 2009-06-10 中芯国际集成电路制造(上海)有限公司 使用所选掩模的双大马士革铜工艺
US20070292771A1 (en) * 2006-06-20 2007-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing intra-field critical dimension uniformity using a sacrificial twin mask
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
JP4333770B2 (ja) 2007-04-12 2009-09-16 ソニー株式会社 マスクパターン作成プログラム、半導体製造方法、マスクパターン作成方法および半導体設計プログラム
JP2010066460A (ja) * 2008-09-10 2010-03-25 Toshiba Corp パターン補正方法およびパターン補正プログラム
TWI461832B (zh) * 2011-01-13 2014-11-21 Inotera Memories Inc 製造光罩的方法
JP2014049467A (ja) * 2012-08-29 2014-03-17 Canon Inc 描画装置、それを用いた物品の製造方法
CN103631095B (zh) * 2013-12-05 2015-11-25 中山新诺科技有限公司 一种拼贴法制备单片集成电容触摸屏的动态电子掩膜板系统
CN110221515B (zh) * 2018-03-02 2023-01-20 中芯国际集成电路制造(上海)有限公司 光学邻近修正方法及掩膜版的制作方法
US11237485B2 (en) * 2020-01-21 2022-02-01 Applied Materials, Inc. System, software application, and method for lithography stitching
CN112987487B (zh) * 2021-02-22 2024-03-08 上海华力集成电路制造有限公司 具有不同图形密度端的图形结构的opc修正方法
CN114460806B (zh) * 2022-01-28 2026-01-30 上海华力集成电路制造有限公司 Opc修正方法
US12326657B2 (en) * 2022-06-16 2025-06-10 Skybull Technology Co., Ltd. Chip deviation correction method for maskless exposure machine
US20240094999A1 (en) * 2022-09-20 2024-03-21 International Business Machines Corporation Automatically replacing code in program that manipulates two vectors of data to improve execution time

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100390A (ja) 1999-09-27 2001-04-13 Toshiba Microelectronics Corp 露光用マスクのパターン補正方法
CN1661480A (zh) * 1999-11-08 2005-08-31 松下电器产业株式会社 一种图案形成方法
JP4064617B2 (ja) 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
CN1285967C (zh) * 2002-01-09 2006-11-22 联华电子股份有限公司 利用光学邻近效应修正多边形光罩特征图案的方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP4330524B2 (ja) * 2004-12-28 2009-09-16 富士通マイクロエレクトロニクス株式会社 パターンデータ補正方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW200632540A (en) 2006-09-16
CN1800985A (zh) 2006-07-12
US7767364B2 (en) 2010-08-03
CN1800985B (zh) 2010-06-16
US7799510B2 (en) 2010-09-21
KR101083957B1 (ko) 2011-11-16
US20060134532A1 (en) 2006-06-22
JP2006154404A (ja) 2006-06-15
TWI313787B (en) 2009-08-21
KR20060060623A (ko) 2006-06-05
US20100038798A1 (en) 2010-02-18

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