TWI313034B - - Google Patents

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Publication number
TWI313034B
TWI313034B TW095139021A TW95139021A TWI313034B TW I313034 B TWI313034 B TW I313034B TW 095139021 A TW095139021 A TW 095139021A TW 95139021 A TW95139021 A TW 95139021A TW I313034 B TWI313034 B TW I313034B
Authority
TW
Taiwan
Prior art keywords
acid
semiconductor device
film
manufacturing
liquid
Prior art date
Application number
TW095139021A
Other languages
English (en)
Chinese (zh)
Other versions
TW200729346A (en
Inventor
Yoshihiro Uozumi
Takashi Hirayama
Akira Kugita
Original Assignee
Toshib Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshib Kk filed Critical Toshib Kk
Publication of TW200729346A publication Critical patent/TW200729346A/zh
Application granted granted Critical
Publication of TWI313034B publication Critical patent/TWI313034B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW095139021A 2005-10-31 2006-10-23 Method of manufacturing semiconductor device TW200729346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005317704A JP4734090B2 (ja) 2005-10-31 2005-10-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200729346A TW200729346A (en) 2007-08-01
TWI313034B true TWI313034B (https=) 2009-08-01

Family

ID=38004333

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139021A TW200729346A (en) 2005-10-31 2006-10-23 Method of manufacturing semiconductor device

Country Status (3)

Country Link
US (1) US7884027B2 (https=)
JP (1) JP4734090B2 (https=)
TW (1) TW200729346A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2149147A1 (en) * 2007-05-14 2010-02-03 Basf Se Method for removing etching residues from semiconductor components
US8222160B2 (en) * 2010-11-30 2012-07-17 Kabushiki Kaisha Toshiba Metal containing sacrifice material and method of damascene wiring formation
KR102659176B1 (ko) * 2020-12-28 2024-04-23 삼성디스플레이 주식회사 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
JPH0645296A (ja) 1992-07-24 1994-02-18 Nippon Steel Corp 半導体装置の洗浄方法
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
JPH10303197A (ja) 1997-04-24 1998-11-13 Matsushita Electron Corp 半導体装置の製造方法
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6248704B1 (en) * 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
JP2001168077A (ja) * 1999-12-06 2001-06-22 Seiko Epson Corp サイドウォール除去剤、サイドウォールの除去方法および半導体素子の製造方法
JP2002050607A (ja) * 2000-08-03 2002-02-15 Kaijo Corp 基板処理方法
JP4044296B2 (ja) 2001-03-22 2008-02-06 株式会社東芝 半導体装置の製造方法
JP2003005388A (ja) * 2001-06-26 2003-01-08 Mitsubishi Gas Chem Co Inc 半導体素子の製造方法。
EP1407326A1 (en) * 2001-07-13 2004-04-14 Ekc Technology, Inc. Sulfoxide pyrrolid(in)one alkanolamine stripping and cleaning composition
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
JP2006054251A (ja) * 2004-08-10 2006-02-23 Toshiba Corp 半導体装置の製造方法
KR100630737B1 (ko) * 2005-02-04 2006-10-02 삼성전자주식회사 금속 ｃｍｐ 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법

Also Published As

Publication number Publication date
US20070105378A1 (en) 2007-05-10
JP2007123787A (ja) 2007-05-17
TW200729346A (en) 2007-08-01
JP4734090B2 (ja) 2011-07-27
US7884027B2 (en) 2011-02-08

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