TWI306905B - Substrate carrier - Google Patents
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- TWI306905B TWI306905B TW094146027A TW94146027A TWI306905B TW I306905 B TWI306905 B TW I306905B TW 094146027 A TW094146027 A TW 094146027A TW 94146027 A TW94146027 A TW 94146027A TW I306905 B TWI306905 B TW I306905B
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- connecting plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H12/00—Towers; Masts or poles; Chimney stacks; Water-towers; Methods of erecting such structures
- E04H12/22—Sockets or holders for poles or posts
- E04H12/2238—Sockets or holders for poles or posts to be placed on the ground
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
- C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
- C03B35/20—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by gripping tongs or supporting frames
- C03B35/202—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by gripping tongs or supporting frames by supporting frames
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/08—Lighting devices intended for fixed installation with a standard
- F21S8/085—Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/34—Masking
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Architecture (AREA)
- General Engineering & Computer Science (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
l3〇69〇5 九、發明說明: 【發明所屬之技術領域】
本項發明是有關一種依照申請專利範圍第1項之前士 的載具。 D 【先前技術】 基板通常是在喷濺塗覆單元内被導引經過一所謂的乾 _部,粒子是從其表面喷濺出去,被沈積至該基板上。由於 例如是玻璃板的基板被使用,其等會被輸送經過一直線排 列的噴濺塗覆單元。這些玻璃板則是被設定進入至一個與 輸送裝置相連結之框架内。 一種用於輸送基板進入和經過例如是真空處理單元的 裝置已為眾人所習知,其包含有一巨大足部係由二個與一 軌道相聯之車輪組和一支撐軸承所組成(參考專利DE 4139549A1)。將被處理的該等基板在此是藉由一長方形 φ 基板握持器之作用而被保持住。 另外,一種用於安裝一圓形基板的環狀基板握持器亦 斤驾知,此種基板握持器依序是藉由四個等距離的 刀配用握持臂而被保持住(參考專利DL· 1 02 1 1 827C 1 )。 倘若握持在框架内之基板的熱膨脹係數不同於該框架 的…膨脹係數時,基板的邊緣處會被不均勻塗佈且單側的 塗佈量過夕。在晶圓之情況中,此種現象被視為是,,邊緣排 斥亦即是該晶圓的周邊區域並未被塗佈。 1306905 【發明内容】 於是,本項發明描述了提供—基板載具所產生的問題, 其中該等基板是被均勻塗佈和該邊緣處並未被塗佈成太 厚。 以上問題的解決係依據申請專利範圍第丨項之該等特 徵。 < . 因此,本項發明是有關一種基板載具,其中該載具至 少部份的組成材料之熱膨脹係數是高於該基板之熱膨脹係 數。為了要避免’或是至少降低該基板於該邊緣處產生不 均勻塗佈的狀況,特別是在噴濺塗覆程序期間時,一連接 板是沿著中央地被連結至該載具。此連接板所具有的熱膨 脹係數則是低於它被鎖附至之該載具區域的熱膨脹係數。 經由本項發明所得到之優點特別是其中經由結合重量 輕、成本經濟的鋁材(其熱膨脹量較大)與一熱膨脹量較 低的材料(例如是鈦材質)之中央定位機構,該,,邊緣排斥” 現象得以被減少。 【實施方式】 本項發明之應用實施例是被表示於下列該等圖式中, 並且於下列圖形中被詳加描述。 圖一 a到圖一 c表示出—面基板2被支持於一傳統式 基板載具1之連接板3、4上的工作原理。以上問題的解 決方式將結合此圖形來加以說明。該基板將被假設是破螭 材質,同時,該基板載具丨是由鋁材所組成。 1306905 圖一 a表示出大約异摄芘 疋攝氏20度的狀態(其中攝氏0度 是等於273Λ5絕對溫度’亦即是攝氏2Q度料293 15絕 對溫度)。基板2的末端4q、4i是會緊鄰著連接板3“ 之突出部位42、43。亓株玆胁 Λ , 件彳夺就44是代表著即將被塗佈之 基板2的側邊。該基板2在圖—a所描述之位置中,該基 板2中被該等連接板3、4所蓋住的區域a、b於被喷減時, 並未被塗佈。該等區域㈠的尺寸是相同。 然而’喷濺塗覆作用的發生溫度是要比上述之溫度高 220絕對溫度(大約是513.15絕對溫度),在此—高溫之 下,玻璃和銘材的熱膨服狀況是有所不同。圖―b和圖— C表示出此種不同熱膨脹狀況的作用。該等銘材的連接板 3、4是會彼此相互連結(其連結方式並未被表示出來), 而且更進一步往内朝向超過基板2的側邊。其中產生二種 不同的相互影響因I’ -相互影響因素是被描述於圖一 b 中’而且另外一種相互影_素則是被描述於圖- c中。 從實際的結果中可以得知,基板2的該等末端區域… 46 '其中之一末端區域通常是要比另一末端區域更加牢固 地倚靠於連接板3、4 i,其結果則是被表示於其中一末 端區域’在圖—b中為該末端區域乜,是會移動離開突出 .P位42 ’而另一末端區域45則維持其原先的位置。 ^ 該基板2於該末端區域46是幾乎完全被塗佈, 而在該末端區域45則保持未被塗佈。 圖c表不出其中該末端區域“維持其原先位置,而 該末端區域45移動離開連接板4之應用實例。 1306905 於是,在圖一 b中,’’ i蠢絡知t & ,, Λ 你口 r遭緣排斥,,現象是發生於末端區 域4 5 ’相反地,在圖一 c中,,,、息从:过〆 你口 ^ 邊緣排斥”現象是發生於末 端區域46。 倘若該基板是-寬度為195〇公厘之玻璃板,而且倘若 溫度差例如是220絕對溫度,玻璃的熱膨脹量是丨.6公厘 且铭材的熱膨服量是10·2公厘。區段部份1的長度則為&6 公厘。 圖二表示出一依照本項發明之基板載具丨,其具有基 板2。基板2則仍是一玻璃板。此基板載具丨基本上是由 一帶有一垂直連接板3、4和二水平板5、6的框架所組成。 該二垂直連接板3、4例如是鈦材質連接板。然而,該二 垂直連接板亦可以由其他材料所組成。該等水平板5、6 較佳是包含有鋁材及分別採用螺栓或鉚釘7 ' 8、9、1 〇或 11到16而被連結至該等垂直連接板3、4的末端處為較適 宜。接近基板2之下方處是會延伸出一相當薄的鈦材質連 接板1 7,此連接板1 7的每一末端則是具有一往上導引之 指狀部位18、19。此連接板17是沿著中央採用螺栓2 〇或 其他類似方式地被連結至該銘材板6。在位於連接板17之 下方的該鋁材板6内是被提供有一溝槽(圖形中未表示出 來),用以導引該鈦材質連接板17。 倘若基板2並未具有連接板1 7和指狀部位1 8、19, 亦即是該基板僅停靠接觸於該等鋁材板5、6上,該基板2 被輸送經過一加熱喷濺塗覆室,該等鋁材板5、6的熱膨 脹量是會大於由玻璃組成之該基板2的熱膨脹量。於是, 1306905 如同圖一 a到圖一 c之所示,連接板3、4是會背離彼此而 移動,其代表著該基板2不再受到此等連接板3、4的限 制。基板2的左側邊緣是位於連接板3上(參考圖一 ^ ), 而且匕的右側邊緣則是位於連接板4上(參考圖一 b)。 在任何一項應用實例中,由於基板2無法相對於連接板3、 4而被女置在中央,導致該基板2的邊緣被不均勻地塗佈。 相反地,倘若該基板是被安置於鈦材質連接板17的指 狀部位18、19之間,由於該鈦材質連接板17的中央是被 連結至鋁材板6之中央部位,該基板2則依然維持在中央。 該鈦材質連接;fe 17是會相•於螺检2〇❿對稱地朝向左側 和右側移動。 因為鈦材質的熱膨脹係數遠低於鋁材的熱膨脹係數, 該基板2僅會相對於指狀部纟18、19而略微移動一段距 離。於是’它能夠相對於該等垂直連接板3、4而維持在 中央。 此之作用原理係再一次被表示於圖三a到圖三c中。 圖三a表示出大約是攝氏2〇度的狀態。該等鈦材質連 接板Π的心狀部位18、19 _方面是會緊鄰著該基板之突 出部位42、43,另外—方面則是會緊鄰著該基板之末端40、 41° 一 疋絕對/皿度,其所產生如同圖三 b、圖二c之所示之相互影響因素。 由於隨著溫度的辦A I, Jjg. . 的增加,鈦材質的熱膨脹量是遠小於鋁 材的熱膨服量,基; 板2僅會分別相對於鈦材質連接板17 1306905 之指狀部位或18而具有些許容差c或d。相較於如圖 一 b和圖-e所示之情況,該基板2的塗覆狀況會更加均 句。當溫度差4 220絕對溫度時,該鈦㈣連接板^於 假設之寬度上僅會膨脹3.5公厘。以此之該等距離c和d 則僅為i.9公厘。例如是陶竞之具有低熱膨服量的其他材 料是可以被用來取代鈦材質,其等陶究是另外選擇性地採 用玻璃纖維來增加強度。 在圖四中表示出-經過依照圖三a之構形的剖面b — B。鈦材質連接板π的該等指狀部位18、19在此載被明 顯表示出來。在此,該等框架3、4、5〇是整體由相同材 料(例如是鋁材)所組成。 【圖式簡單說明】 圖式中: 圖-a到圖-e為-具有-不同熱膨脹量的基板之基 板载具的基本示意圖, 圖二為一具有相當低熱膨脹係數材料 質)之連接板的框架型式基板載具, 意圖, 圖三a到圖三c為解釋本項發明之操作功能的概略示 圖四為經過如圖三a所示之裝置中的Β〜β剖面視圖 b區域 【主要元件符號說明】 a區域 1306905
C距離 1區段部份 1基板載具 3連接板 5水平板 7螺栓或鉚釘 9螺栓或鉚釘 11螺栓或鉚釘 13螺栓或鉚釘 1 5螺栓或鉚釘 17連接板 19指狀部位 40末端 42突出部位 44側邊 46區域 d距離 2基板 4連接板 6水平板 8螺栓或鉚釘 1 0螺栓或鉚釘 12螺栓或鉚釘 14螺栓或鉚釘 16螺栓或鉚釘 1 8指狀部位 20螺栓 41末端 43突出部位 45區域 50框架 11
Claims (1)
- '1306905申請專利範圍: 口 膨脹係數曰、中該載具至少部份的組成材料之熱 是、,儿=於該基板之熱膨脹係數,其中-連接板(Π) 接Z中央地被鎖附在該載具⑴的一特定區域内,該連 具有的熱膨脹係數低於它被鎖附至 熱膨脹係數。 ^載具區域的 其中該連接板(1 7 ) ’於該等突出部位之 其中載具(1 )是被 其中該载具(1)至 2.如申請專利範圍第I項之載具 方、匕的末端具有突出部位(18、19) 間被安置於該基板(2 )的一末端處 3·如申請專利範圍第1項之載具 實行成一框架之形式。 4.如申凊專利範圍第1項之載具 少部伤(5、6)是由鋁材所組成。 …請專利範圍第1項之載具’其中該載具包含有二 (3、4)和二水平板(5、6),該水平板(5、 6)疋由鋁材所組成。 ::專利乾圍第5項之載具’其中該二垂直連接板 (3 4)疋由鈦材質所組成。 -玻Z申請專利範圍第1項之載具,其中該基板⑴是 广:申請專利範圍第〗項之載具,其中被鎖附至該載且 ()的该連接板(17)是由鈦材質所組成。 9_如申請專利範圍第5項之載具,其中 是被與該載具⑴的該該垂直連接板(3 =?) 夕乞该该末端 12 -1306905 末端連結,並且該連接板(1 7 )是沿著中央地被與該該水 平板的下侧部位(6 )連結。 1 〇.如申請專利範圍第1項之載具,其中安置有該連接 板(1 7 )的該板(6 )是包含有一用於該連接板(1 7 )之水 平導件。 十一、圖式:如次頁13
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DE102005045718A DE102005045718B4 (de) | 2005-09-24 | 2005-09-24 | Träger für ein Substrat |
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JP (1) | JP4607024B2 (zh) |
KR (1) | KR100752429B1 (zh) |
CN (1) | CN1936071B (zh) |
DE (1) | DE102005045718B4 (zh) |
TW (1) | TWI306905B (zh) |
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TWI491755B (zh) * | 2011-12-13 | 2015-07-11 | 聯華電子股份有限公司 | 基材載具及其應用 |
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KR101029937B1 (ko) * | 2010-09-24 | 2011-04-19 | 김철수 | 캐리어 프레임 구조 |
CN102615605A (zh) * | 2011-01-31 | 2012-08-01 | 进准光学(江苏)有限公司 | 夹具 |
GB2489474A (en) * | 2011-03-29 | 2012-10-03 | Kromek Ltd | Crystal growth apparatus |
TW201424873A (zh) * | 2012-12-21 | 2014-07-01 | Hon Hai Prec Ind Co Ltd | 清洗裝置 |
KR101488879B1 (ko) * | 2013-01-18 | 2015-02-04 | 주식회사 대고테크 | 캐리어 프레임 구조 |
WO2017170125A1 (ja) * | 2016-03-29 | 2017-10-05 | 株式会社アルバック | 透明導電膜付き基板の製造方法、透明導電膜付き基板の製造装置、透明導電膜付き基板、及び太陽電池 |
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TWI491755B (zh) * | 2011-12-13 | 2015-07-11 | 聯華電子股份有限公司 | 基材載具及其應用 |
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TW200712241A (en) | 2007-04-01 |
US8083912B2 (en) | 2011-12-27 |
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DE102005045718A1 (de) | 2007-04-05 |
CN1936071B (zh) | 2010-05-12 |
JP4607024B2 (ja) | 2011-01-05 |
KR100752429B1 (ko) | 2007-08-28 |
JP2007088408A (ja) | 2007-04-05 |
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DE102005045718B4 (de) | 2009-06-25 |
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