TWI292188B - - Google Patents

Download PDF

Info

Publication number
TWI292188B
TWI292188B TW092104710A TW92104710A TWI292188B TW I292188 B TWI292188 B TW I292188B TW 092104710 A TW092104710 A TW 092104710A TW 92104710 A TW92104710 A TW 92104710A TW I292188 B TWI292188 B TW I292188B
Authority
TW
Taiwan
Prior art keywords
gas
flow rate
etching
ratio
deposit
Prior art date
Application number
TW092104710A
Other languages
English (en)
Chinese (zh)
Other versions
TW200305216A (en
Inventor
Noriyuki Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200305216A publication Critical patent/TW200305216A/zh
Application granted granted Critical
Publication of TWI292188B publication Critical patent/TWI292188B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW092104710A 2002-03-12 2003-03-05 Method of etching and etching apparatus TW200305216A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002066343A JP4153708B2 (ja) 2002-03-12 2002-03-12 エッチング方法

Publications (2)

Publication Number Publication Date
TW200305216A TW200305216A (en) 2003-10-16
TWI292188B true TWI292188B (OSRAM) 2008-01-01

Family

ID=27800249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092104710A TW200305216A (en) 2002-03-12 2003-03-05 Method of etching and etching apparatus

Country Status (5)

Country Link
US (2) US20050042876A1 (OSRAM)
JP (1) JP4153708B2 (OSRAM)
AU (1) AU2003211593A1 (OSRAM)
TW (1) TW200305216A (OSRAM)
WO (1) WO2003077301A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479564B (zh) * 2011-11-21 2015-04-01 Psk有限公司 Semiconductor manufacturing apparatus and semiconductor manufacturing method

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129282B2 (en) * 2006-07-19 2012-03-06 Tokyo Electron Limited Plasma etching method and computer-readable storage medium
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
GB201305674D0 (en) * 2013-03-28 2013-05-15 Spts Technologies Ltd Method and apparatus for processing a semiconductor workpiece
JP6096470B2 (ja) * 2012-10-29 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6097192B2 (ja) * 2013-04-19 2017-03-15 東京エレクトロン株式会社 エッチング方法
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9748366B2 (en) 2013-10-03 2017-08-29 Applied Materials, Inc. Etching oxide-nitride stacks using C4F6H2
JP6578145B2 (ja) * 2015-07-07 2019-09-18 東京エレクトロン株式会社 エッチング方法
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
CN114783866B (zh) * 2022-03-23 2025-05-16 深圳方正微电子有限公司 一种TiN膜层形貌的刻蚀方法及TiN膜层
CN116730279B (zh) * 2023-05-22 2026-04-17 北京北方华创微电子装备有限公司 一种氧化硅的刻蚀方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948701A (en) * 1997-07-30 1999-09-07 Chartered Semiconductor Manufacturing, Ltd. Self-aligned contact (SAC) etching using polymer-building chemistry
US6602434B1 (en) * 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6117786A (en) * 1998-05-05 2000-09-12 Lam Research Corporation Method for etching silicon dioxide using fluorocarbon gas chemistry
US6151931A (en) * 1998-12-18 2000-11-28 Voith Sulzer Paper Technology North America, Inc. Effluent shower for pulp washer
US6217786B1 (en) * 1998-12-31 2001-04-17 Lam Research Corporation Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6797189B2 (en) * 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6544429B1 (en) * 1999-03-25 2003-04-08 Applied Materials Inc. Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6040223A (en) * 1999-08-13 2000-03-21 Taiwan Semiconductor Manufacturing Company Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits
JP2002025979A (ja) * 2000-07-03 2002-01-25 Hitachi Ltd 半導体集積回路装置の製造方法
JP4566373B2 (ja) * 2000-09-21 2010-10-20 東京エレクトロン株式会社 酸化膜エッチング方法
US20020142610A1 (en) * 2001-03-30 2002-10-03 Ting Chien Plasma etching of dielectric layer with selectivity to stop layer
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479564B (zh) * 2011-11-21 2015-04-01 Psk有限公司 Semiconductor manufacturing apparatus and semiconductor manufacturing method

Also Published As

Publication number Publication date
JP4153708B2 (ja) 2008-09-24
US7943524B2 (en) 2011-05-17
JP2003264178A (ja) 2003-09-19
TW200305216A (en) 2003-10-16
US20080014749A1 (en) 2008-01-17
US20050042876A1 (en) 2005-02-24
AU2003211593A1 (en) 2003-09-22
WO2003077301A1 (en) 2003-09-18

Similar Documents

Publication Publication Date Title
TWI871361B (zh) 藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法
US11075084B2 (en) Chemistries for etching multi-stacked layers
US7087998B2 (en) Control of air gap position in a dielectric layer
CN100530554C (zh) Hdp-cvd多步间隙填充处理
US6867086B1 (en) Multi-step deposition and etch back gap fill process
JP5530088B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
TWI627724B (zh) 在先進圖案化製程中用於間隔物沉積與選擇性移除的設備與方法
JP2002543613A (ja) 低容量の誘電体層をエッチングするための技術
KR20130047663A (ko) 플라즈마 에칭 방법
TWI328618B (en) High-throughput hdp-cvd processes for advanced gapfill applications
JP2001507081A (ja) 誘導結合プラズマｃｖｄ
CN111819669B (zh) 形成气隙的系统及方法
TWI838915B (zh) 使用含矽氫氟烴之蝕刻方法
JP7830598B2 (ja) 窒化ケイ素スペーサーの選択的エッチング中の形状制御を改善する方法
TWI766866B (zh) 蝕刻方法
JP4153708B2 (ja) エッチング方法
WO2002073674A1 (fr) Procede permettant de graver un film isolant organique et procede double damascene
CN101106086A (zh) 等离子体蚀刻方法及计算机可读取的存储介质
JPH06338479A (ja) エッチング方法
JP2002540627A (ja) キセノンの付加によるシリコン酸化物のエッチング割合及び基板選択性の向上
CN101447426B (zh) 等离子体蚀刻方法
US7344996B1 (en) Helium-based etch process in deposition-etch-deposition gap fill
TW200303053A (en) A high selectivity and residue free process for metal on thin dielectric gate etch application
US20140264152A1 (en) Chemistry and Compositions for Manufacturing Integrated Circuits
JP2001250817A (ja) ドライエッチング方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees