JP4153708B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP4153708B2
JP4153708B2 JP2002066343A JP2002066343A JP4153708B2 JP 4153708 B2 JP4153708 B2 JP 4153708B2 JP 2002066343 A JP2002066343 A JP 2002066343A JP 2002066343 A JP2002066343 A JP 2002066343A JP 4153708 B2 JP4153708 B2 JP 4153708B2
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JP
Japan
Prior art keywords
gas
flow rate
etching
oxide film
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002066343A
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English (en)
Japanese (ja)
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JP2003264178A (ja
Inventor
典之 小林
憲治 足立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002066343A priority Critical patent/JP4153708B2/ja
Priority to TW092104710A priority patent/TW200305216A/zh
Priority to PCT/JP2003/002870 priority patent/WO2003077301A1/ja
Priority to AU2003211593A priority patent/AU2003211593A1/en
Publication of JP2003264178A publication Critical patent/JP2003264178A/ja
Priority to US10/938,789 priority patent/US20050042876A1/en
Priority to US11/780,797 priority patent/US7943524B2/en
Application granted granted Critical
Publication of JP4153708B2 publication Critical patent/JP4153708B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002066343A 2002-03-12 2002-03-12 エッチング方法 Expired - Fee Related JP4153708B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002066343A JP4153708B2 (ja) 2002-03-12 2002-03-12 エッチング方法
TW092104710A TW200305216A (en) 2002-03-12 2003-03-05 Method of etching and etching apparatus
PCT/JP2003/002870 WO2003077301A1 (en) 2002-03-12 2003-03-11 Method of etching and etching apparatus
AU2003211593A AU2003211593A1 (en) 2002-03-12 2003-03-11 Method of etching and etching apparatus
US10/938,789 US20050042876A1 (en) 2002-03-12 2004-09-13 Method of etching and etching apparatus
US11/780,797 US7943524B2 (en) 2002-03-12 2007-07-20 Method of etching and etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002066343A JP4153708B2 (ja) 2002-03-12 2002-03-12 エッチング方法

Publications (2)

Publication Number Publication Date
JP2003264178A JP2003264178A (ja) 2003-09-19
JP4153708B2 true JP4153708B2 (ja) 2008-09-24

Family

ID=27800249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002066343A Expired - Fee Related JP4153708B2 (ja) 2002-03-12 2002-03-12 エッチング方法

Country Status (5)

Country Link
US (2) US20050042876A1 (OSRAM)
JP (1) JP4153708B2 (OSRAM)
AU (1) AU2003211593A1 (OSRAM)
TW (1) TW200305216A (OSRAM)
WO (1) WO2003077301A1 (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129282B2 (en) * 2006-07-19 2012-03-06 Tokyo Electron Limited Plasma etching method and computer-readable storage medium
KR101276258B1 (ko) * 2011-11-21 2013-06-20 피에스케이 주식회사 반도체 제조 장치 및 반도체 제조 방법
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
GB201305674D0 (en) * 2013-03-28 2013-05-15 Spts Technologies Ltd Method and apparatus for processing a semiconductor workpiece
JP6096470B2 (ja) * 2012-10-29 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6097192B2 (ja) * 2013-04-19 2017-03-15 東京エレクトロン株式会社 エッチング方法
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9748366B2 (en) 2013-10-03 2017-08-29 Applied Materials, Inc. Etching oxide-nitride stacks using C4F6H2
JP6578145B2 (ja) * 2015-07-07 2019-09-18 東京エレクトロン株式会社 エッチング方法
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
CN114783866B (zh) * 2022-03-23 2025-05-16 深圳方正微电子有限公司 一种TiN膜层形貌的刻蚀方法及TiN膜层
CN116730279B (zh) * 2023-05-22 2026-04-17 北京北方华创微电子装备有限公司 一种氧化硅的刻蚀方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948701A (en) * 1997-07-30 1999-09-07 Chartered Semiconductor Manufacturing, Ltd. Self-aligned contact (SAC) etching using polymer-building chemistry
US6602434B1 (en) * 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6117786A (en) * 1998-05-05 2000-09-12 Lam Research Corporation Method for etching silicon dioxide using fluorocarbon gas chemistry
US6151931A (en) * 1998-12-18 2000-11-28 Voith Sulzer Paper Technology North America, Inc. Effluent shower for pulp washer
US6217786B1 (en) * 1998-12-31 2001-04-17 Lam Research Corporation Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6797189B2 (en) * 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6544429B1 (en) * 1999-03-25 2003-04-08 Applied Materials Inc. Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6040223A (en) * 1999-08-13 2000-03-21 Taiwan Semiconductor Manufacturing Company Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits
JP2002025979A (ja) * 2000-07-03 2002-01-25 Hitachi Ltd 半導体集積回路装置の製造方法
JP4566373B2 (ja) * 2000-09-21 2010-10-20 東京エレクトロン株式会社 酸化膜エッチング方法
US20020142610A1 (en) * 2001-03-30 2002-10-03 Ting Chien Plasma etching of dielectric layer with selectivity to stop layer
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials

Also Published As

Publication number Publication date
TWI292188B (OSRAM) 2008-01-01
US7943524B2 (en) 2011-05-17
JP2003264178A (ja) 2003-09-19
TW200305216A (en) 2003-10-16
US20080014749A1 (en) 2008-01-17
US20050042876A1 (en) 2005-02-24
AU2003211593A1 (en) 2003-09-22
WO2003077301A1 (en) 2003-09-18

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