TWI291756B - Low cost lead-free preplated leadframe having improved adhesion and solderability - Google Patents

Low cost lead-free preplated leadframe having improved adhesion and solderability Download PDF

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Publication number
TWI291756B
TWI291756B TW094147853A TW94147853A TWI291756B TW I291756 B TWI291756 B TW I291756B TW 094147853 A TW094147853 A TW 094147853A TW 94147853 A TW94147853 A TW 94147853A TW I291756 B TWI291756 B TW I291756B
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Taiwan
Prior art keywords
layer
lead frame
thickness
base metal
metal
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TW094147853A
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English (en)
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TW200639992A (en
Inventor
Donald C Abbott
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Texas Instruments Inc
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Publication of TW200639992A publication Critical patent/TW200639992A/zh
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Publication of TWI291756B publication Critical patent/TWI291756B/zh

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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  • Engineering & Computer Science (AREA)
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1291756 九、發明說明： 【發明所屬之技術領域】 本發明大體係關於半導體裝置及處理方法之領域，且更 具體5之，係關於用於半導體褒置之引線框架的材料及製 造。 【先前技術】 用於半導體裝置之引線框架提供一穩定支樓塾以牢固定 位半導體晶片’通常為一封裝内之積體電路（IC)晶片。因為 包括塾的引線框架由導電材料製成，所以在需要時墊可偏 向涉及半導體裝置之網路所需的任何電位，尤其是地面電 位。 以把不同電導體吸 上的接觸墊之間的 此外，該引線框架提供複數個導電段 引至晶片附近。該等段的内端與IC表面 身又細金屬線個別地接合至該ic 因此，段内端之表面必須適於使 剩餘間隙為橋式連接器， 接觸墊及引線框架段上。 該連接器縫合式附著。
此外，遠離1C晶片之引線段末端（"外"端）需要與外部電與 電連接及機械連接（例如）以裝配至印刷電路板。在許多電弓 應用中’此附著可藉由焊接來執行，按照慣例當回焊温方 在2HTC至22(TC範圍内時使用引線錫（錯/锡）共晶焊料進子 焊接。因此，段外端之表面必須具有對回焊金屬或合金自 親和力。 口 ’ 最後’引線框架提供用於封裝敏感晶片及易碎連 構架。較佳方法是使用塑料材料而不是金屬罐或陶 106314.doc 1291756 封裝’因為塑料材料成本低。在17rcir對環氧基熱固性化 合物之轉注成形製程已實行多年了。用於成形與模型固化 (聚合)的175t之溫度與用於鉛錫共晶焊料回焊的 220°C是一致的。 n 在潮濕環境中進行的可靠性測試要求模製化合物對引線 框架及其封裝的裝置部分具有良好的黏著力。良好勒著力 的兩個主要有助因素是模製化合物對引線框架金屬的化學 親和力與引線框架的表面製備。 近來普遍的趨勢是電子業中避免使用錯而是使用無錯焊 二，使回焊溫度範圍提高至約⑽t左右。此較高回谭溫度 耗圍使得難以保持模製化合物對引線框架的黏著力。此對 QFN(四邊扁平無引線）及S0N (小外形無引線）裝置中可用 的極小引線框架表面而言尤其如此。在此溫度範圍中，已 知之引線框架並不提供具有良好黏著力及低成本、易於製 造且可避免鬍晶之金屬化。 、 慣例是用薄的（約12〇_至250㈣金屬薄片製造單件社 構引線框架。由於易於製造，-般選擇的起始金屬是銅、 銅合金及鐵錄合金（例如通常所說的”合金42”）。可在原始薄 片上蝕刻或衝壓所需要的引線框架形狀。以此方式，引線
框架之一個別段採取薄金 * & a V ^之㈣’其特定幾何形狀取 【二在容厂 /此需要—低成本可靠引線框架，其對模製化合物有黏 者，對連接線有接合能力，對曝露的引線框架段有焊接.. 106314.doc 1291756 性，且不存在錫枝晶生長之風險。技術優勢是，引線框架 及其製造方法的成本低並具有足夠的靈活性能適用於不同 的半導體產品系列，廣泛的設計及裝配變化，並在改良製 程良率及裝置可靠性目標上實現了改良。進一步的技術優 勢是’使用已安I的設備基座便可實現此等創新，因此益 需投資新製造機器。 本發明之一實施例為一種引線框架，其具有由一基底金 屬製成之結構，其中該結構有複數個表面。每一此等表面 之上是黏著於該基底金屬的金屬層堆疊。該堆疊包含一與 該基底金屬相接觸之鎳層、一與該鎳層相接觸之鈀層，及 一與該把層相接觸之最外層錫層。 就較佳的層厚度而言，該鎳層厚度約在〇·5 4瓜至2.〇 之間，該把層厚度約在5 _至15〇 nm之間，該錫層厚度約 J於5 nm，較佳約為3 nm。在此薄度下，錫不能形成鬍晶， 2可提供對聚合封裝材料的卓越黏著力、可靠的縫合式接 合之改良特徵以及對回焊金屬（焊料）之親和力。代替習知金 層，錫層提供了一低成本替代品。 ^發明之另一實施例為一種半導體裝置，其具有一引線 =木，邊引線框架具有由一基底金屬製成之結構，其中該 結構包含—晶片黏著墊及複數個引線段。該基底金屬之上 依次具有一與其相接觸之黏附鎳層、一與該鎳層相接觸之 鈀=，及一與該鈀層相接觸之最外層錫層。一半導體晶片 附著=錢著墊’且導電連接件繫結該晶片與引線段。聚 & ί衣材料覆盖該晶片、該等連接件及引線段部分。 106314.doc 1291756 本發明之另一實施例為一種製造引線框架之方法，盆中 提供一具有複數個表面之基底金屬結構。在每 =上電鑛黏附於該基底金屬之金屬層堆叠。此電❹驟 已3電鐘—與基底金屬相接觸之制，其厚度約在〇.5 μΓη y.O μηι之間’接著，電鍵—與該鎳層相接觸之把層，其 厚度約在5赠15〇 nm之間；最後，電錄—與職層相接 觸之錫層，其厚度約小於5 nm。所有該等三個電鑛步驟皆 無需使用遮罩或有選擇性電鍍來執行。 本發明之技術優勢是：料钱步料使用有毒材料或 鬍晶材料；向下接合的能力得以增強；及水分含量品質得 以改良。此外，所需的電鍍製程便宜且易於加工。 根據以下對本發明之較佳實施例的描述並結合隨附圖式 及附加申請專利範圍中陳述的新穎特徵，本發明之特定實 施例體現出的技術進步將變得顯而易見。 【實施方式】 圖1為一引線樞架部分之簡化截面示意圖，整體表示為 100。該引線框架有複數個表面：第一表面1〇1、第二表面 102 ’及許多側邊表面110a、110b、……、110η。表面1〇1 及102來自起始材料薄片’而側邊表面1 1〇&至1 則已由引 線框架結構之成形處理產生。所描述之引線框架部分含有 複數個晶片黏著墊103及複數個引線段104。該引線框架由 一基底金屬（base metal) 105製成。 如本文中所定義，引線框架之起始材料稱為”基底金屬，，， 其指示金屬的類型。因此，不能在電氣化學意義（如與，，貴 106314.doc 1291756 金屬”相對）或結構意義上解釋術語”基底金屬”。 基底金屬105—般為銅或銅合金。其他選擇包含黃銅、 鋁、鐵鎳合金（"合金42”）及科伐鐵鎳鈷合金（Kovar)。 基底金屬105來自一金屬薄片，其較佳厚度範圍為1〇〇 μηι 至300 μιη ;更薄的薄片亦為可能的。此厚度範圍内的延展 性可提供5°/。至15%的伸長率，因而便於進行一些已完成裝 置所需的段彎曲及成形操作。如晶片黏著墊、引線段及連 接軌條（圖1中未圖示，但以虛線暗示）之引線框架部分係由 起始金屬薄片衝壓或蝕刻而得。如上所述，此等衝壓或餘 刻製程產生了引線框架部分的許多侧邊表面11〇a、 110b、......、110η。 圖2說明根據本發明之一實施例之引線框架的截面示意 圖。該引線框架結構具有一有複數個表面之基底金屬1〇5，
及錫合金，諸如錫/銀/銅）的親和力 :對於某些模製化合物， I相比其黏著力改良了 1 5 ^•料之回焊金屬（較佳為錫 〇。此外，錫層的薄度允 106314.doc 1291756 : = 行可靠的線縫合式接合(例如，金線)，且其由於 4度故不具有生長鬍晶之可能。 /為所有此等金制皆㈣覆㈣線框架表面，所 "匕積可較佳藉由電鐘整個引線框架帶（見下文）而達成且 避免使用遮軍。然巾’若某些裝置在選定區域内需要具： :數個窗口之錫層以曝露下方的鈀層，以便進行特殊的全 屬接合，則必須使用一適用於引線框架表面ιοι之遮罩來電 鍍該錫層。所得窗口之-實例表示為圖2中的240。 在另一實施例中，某些線縫合式接合可在選定區域内需 要锡層上有額外銀層。在此情況下，必須使用-遮罩來 電錢該銀層（見下文所得選枝點之__實例表示為圖2中 的 230 〇 本發明之另一實施例為一半導體裝置，其如圖3中以四邊 扁平無引線（QFN)或小外形無引線（s〇N)裝置所例示。實際 上，圖3展示一分離（singulati〇n)前之引線框架帶，其具有 • 複數個已裝配及封裝之裝置。在本發明之實施例中，該裝 置有一引線框架，該引線框架具有一基底金屬3〇1、一第一 表面301 a及一第二表面3〇lb。該基底金屬之一實例為銅。 此外，該引線框架之結構由一晶片黏著墊3 〇2及複數個引線 段303組成。每一引線段具有一靠近晶片黏著墊3〇2之第一 端303a，及一遠離黏著墊3〇2之第二端303b。 引線框架之第一表面3〇la、引線框架之第二表面3〇lb及 所有側邊皆由層之堆疊所覆蓋，該層之堆疊為該引線框架 提供了對聚合材料的可靠黏著力以及對回焊金屬的親和 106314.doc -10- 1291756 力。該層之堆疊包含一與該基底金屬相接觸之鎳層3〇4、一 與該鎳層相接觸之鈀層305,及一與該鈀層相接觸之最外芦 锡層3 0 6。 半導體晶片3 10 (例如積體電路晶片）借助黏接層3 i i附著 於每一晶片黏著墊302。接合線312使晶片31〇與引線段3〇3 之第一端303a互連。縫合式接合件312a焊接至最外層錫層 3〇6，其典型在此處穿過該錫層，實際上附著於鈀層。
在一些實施例中，選擇性銀區域33〇支撐線312的縫合附 著在’、他只％例中，建議在最外層錫層306中留出窗口 340，以便縫合附著於鈀層3〇5。 聚合封裝材料320 (例如環氧基模製化合物）覆蓋晶片 310接口線312及引線段之第一端3〇3a。該聚合材料亦 填充晶片31〇與引線段之第—端之間的間隙，從而覆蓋了引 線框架側邊。因此’聚合材料32G亦形成一與最外表面層3〇6 在同一平面内之表面321。 回焊金屬可能覆蓋第二弓丨線框架表面的一些部分或d 部。舉例而言，錫合今可5卜 场。至了至少覆盍引線段之第二端，或4 復盍全部引線段及曝露的晶片墊之外表面。 刀獨立的裝置。該鋸將切開封裝材料320以及引 線框架段。 本發明之另一者# μ达 a例為一種製造引線框架之方法，塞 後續：驟”是提供一具有複數個表面之基底金屬結相 "π在此等表面上電鑛金屬層。連續的電鐘步聯 106314.doc !291756 順序為·· 厚度範圍約為〇·5 μηι至2.0 在3亥基底金屬上電鍵一錄層 μηι 〇 在該鎳層上電鑛一纪層，厚度範圍約為5nm至i5〇nm。 在該把層上電鑛一錫層，厚度範圍約為5 nm至2 nm。 本發明之某些實施例需要使用選擇性電鐘。此等實施例 之實例為在選定區域内需要錫層上有一附加銀層之裝置； 或’需要錫層内有窗口以曝露下方的鈀層之裝置。口要上 述方法需要引線框架上有層之選擇性金屬沉積，就使用一 便宜的臨時遮罩步驟’該步驟僅留出期望容納金屬層的引 線框架部分。因為電錄時間Μ ’所以可考慮習知的選擇性 點鍍技術，尤其是可再用橡膠遮罩。對薄金屬電錢而言， 較佳使用輪系統。 儘管已參考㈣性實❹m本發㈣行了糾，作並不 希望在限制意義上對此描料行解釋。藉由參考該描述， 對該等說明性實施例之不同更改及組合以及本發明之直他 實施例對熟習此項技術者應是顯而易見的。舉例而言，本 發明適用於使用任何類型的半導體晶片之產品、離散電路 或積體電路’且半導體晶片之材料可包㈣、石夕鍺、碎化 鎵’或積體電路製造業中所使用的任何其他半導體材 複合材料。 如另一貫例，在一基底金屬薄片上衝壓引線框架之處理 步驟之後’可接一選擇性蝕刻之處理步驟，尤其是對曝露 的基底金屬表面進行選擇似彳，以產生大面積的輪廊表面 106314.doc • 12 · 1291756 從而獲得對模製化合物之改良黏著力。根據本發明之所電 鍍之層的順序可適用於任何該等經特殊蝕刻的引線框架基 礎結構。 因此希望附加之申請專利範圍涵蓋任何該等更改或實施 例。 【圖式簡單說明】 圖1為一引線框架帶之一部分的基底金屬結構之截面示 忍圖’该引線框架帶具有已形成的引線框架結構。 圖2說明一引線框架帶部分之截面示意圖，該引線框架帶 部分具有一基底金屬結構及複數個表面，其中該等表面已 被電鍍上根據本發明之黏附層之堆疊。 圖3說明本發明之一裝置實施例；截面示意圖展示根據本 發明之一實施例製備的引線框架帶之一部分，及已裝配且 封裝在一引線框架表面上的複數個半導體晶片。 【主要元件符號說明】 100 101 102 103 104 105 110a 110b 110c 簡化截面示意圖 第一表面 第二表面 晶片黏著墊 引線段 基底金屬 側邊表面 側邊表面 側邊表面 106314.doc -13- 1291756
110η 側邊表面 201 鎳層 202 1巴層 203 錫層 230 銀點 240 窗口 301 基底金屬 301a 第一表面 301b 第二表面 302 晶片黏者塾 303 引線段 303a 引線段第一端 303b 引線段第二端 304 鎳層 305 1巴層 306 錫層/最外表面層 310 半導體晶片 311 黏接層 312 接合線 312a 缝合式接合件 320 聚合封裝材料 321 表面 330 銀層區域/虛線 340 窗口 106314.doc -14-

Claims (1)

  1. 产车7月/，日修(更)正^ i2r91g§^i47853號專利申請案 ^ 中文申凊專利範圍替換本(96年7月） 十、申請專利範圍： L 一種引線框架帶，其包含： 一由一基底金屬製成之結構，該結構具有複數個表 面；及 等結構表面上黏附於該基 一金屬層堆疊，其在每一該 底金屬，該堆疊依次包含： 鎳層，其大體覆蓋該等整個基底金屬表面；
    鈀層，其大體覆蓋該整個鎳層；及 一最外層錫層，其大體覆蓋該整個鈀層。 2。如請求項1之引線框架 列各物組成之群：銅 鐵銘合金。 帶，其中該基底金屬係選自一由下 •銅合金、鋁、鐵鎳合金及科伐鐵 週於金屬焊接及接合之選擇性銀層區域。 8.=求項！之引線框架帶，其中該最外㈣層具^ 的複數個窗口，以使下方的把層曝露而促進 3 ·如請求項1之引線框架帶 至2·0 μιη之間的厚度。 4·如請求項1之引線框架帶 150 nm之間的厚度。 5·如請求項1之引線框架帶 之厚度。 6·如請求項1之引線框架帶 厚度。 7·如請求項1之引線框架帶 其中遠鎳層具有一約在0.5 μιη 其中該把層具有一約在5 nm至 其中該錫層具有一約小於5nm 其中該錫層具有一約為3nm之 其進一步具有在該第一表面上 106314-960718.doc Ϊ291756 接合附著。 9· 一種半導體裝置，其包含： 結構引線框架，該引線框架具有一由-基底金屬製成之 >忒、、構包含一晶片黏著墊及複數個引線段； 一^基：金屬依次具有一大體覆蓋該基底金屬之鎳層、 =體後盍該鎳層之鈀層及一大體覆蓋該鈀層之最 一 “:基底金屬在該裝置之複數個外部側面上曝露； 、半導體晶片，其附著於該黏著墊； 連接件，其係自該晶片至該引線段；及 =封凌材料，其覆蓋該晶片、該等連接件及該等 線段之部分。 令5丨 :求項9之裝置，其進一步包含在該等段之彼等部分上 2烊金屬，該等部分未被該封裝材料覆蓋。 ^求項9之裝置’其中該等連接件為接合線。 參 • -”製造-引線框架之方法，其包含以下步驟： 提，一具複數個表面之結構化基底金屬帶；及 在母-該等結構表面上㈣黏附於該基底金屬之一金 屬層堆疊，該步驟依次包括： '錢大體覆蓋該基底金屬之鎳層； 電鍍一大體覆蓋該鎳層之鈀層；及 電鍍一大體覆蓋該鈀層之最外層錫層。 ^ °月求項12之方法，其中該鎳層具有一約在〇·5 μπι至2·0μιη 之間的厚度。 14·如5月求項12之方法，其中該飽層具有一約在$腿至w 106314-960718.doc J291756 nm之間的厚度。 1 5 ·如請求項12之方法，其中該錫層具有一約小於5 nm之厚 度。 16. 如請求項12之方法，其中該錫層具有一約為3 nm之厚度。 17. 如請求項12之方法，其進一步包含電鍍該錫層以使其留 出向下方之鈀層敞開的選定窗口之步驟。 18. 如請求項12之方法，其進一步包含選擇性電鍍一與該錫 層相接觸之銀層之步驟。
    106314-960718.doc 3-
TW094147853A 2004-12-30 2005-12-30 Low cost lead-free preplated leadframe having improved adhesion and solderability TWI291756B (en)

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