TWI281694B - Control process, temperature control process, temperature regulator, heat treatment and recordable medium - Google Patents
Control process, temperature control process, temperature regulator, heat treatment and recordable medium Download PDFInfo
- Publication number
- TWI281694B TWI281694B TW094135439A TW94135439A TWI281694B TW I281694 B TWI281694 B TW I281694B TW 094135439 A TW094135439 A TW 094135439A TW 94135439 A TW94135439 A TW 94135439A TW I281694 B TWI281694 B TW I281694B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- correction
- target
- interference
- detection
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims description 30
- 238000012937 correction Methods 0.000 claims abstract description 103
- 239000011159 matrix material Substances 0.000 claims abstract description 31
- 238000005259 measurement Methods 0.000 claims description 76
- 238000012545 processing Methods 0.000 claims description 64
- 238000001514 detection method Methods 0.000 claims description 51
- 238000004364 calculation method Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000007689 inspection Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 51
- 238000012360 testing method Methods 0.000 description 21
- 230000007704 transition Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 6
- 238000004422 calculation algorithm Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1935—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces using sequential control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Remote Sensing (AREA)
- Automation & Control Theory (AREA)
- Control Of Temperature (AREA)
- Feedback Control In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004298803A JP2006113724A (ja) | 2004-10-13 | 2004-10-13 | 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200627513A TW200627513A (en) | 2006-08-01 |
TWI281694B true TWI281694B (en) | 2007-05-21 |
Family
ID=35671138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094135439A TWI281694B (en) | 2004-10-13 | 2005-10-12 | Control process, temperature control process, temperature regulator, heat treatment and recordable medium |
Country Status (6)
Country | Link |
---|---|
US (1) | US7324877B2 (de) |
EP (1) | EP1647868B1 (de) |
JP (1) | JP2006113724A (de) |
KR (1) | KR100707097B1 (de) |
CN (1) | CN100454184C (de) |
TW (1) | TWI281694B (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090175771A1 (en) * | 2006-03-16 | 2009-07-09 | Applied Materials, Inc. | Abatement of effluent gas |
JP5224656B2 (ja) * | 2006-05-31 | 2013-07-03 | 東京エレクトロン株式会社 | 情報処理装置、半導体製造システム、情報処理方法、プログラム、及び記録媒体 |
US7925389B2 (en) * | 2006-06-15 | 2011-04-12 | International Business Machines Corporation | Method of detecting recirculation of heated air within a rack enclosure |
JP4553266B2 (ja) * | 2007-04-13 | 2010-09-29 | 東京エレクトロン株式会社 | 熱処理装置、制御定数の自動調整方法及び記憶媒体 |
JP4858333B2 (ja) * | 2007-07-05 | 2012-01-18 | オムロン株式会社 | 干渉情報の表示方法および表示装置 |
KR100893366B1 (ko) * | 2007-08-08 | 2009-04-17 | 세메스 주식회사 | 반도체 제조 설비의 온도 제어 장치 및 그의 온도 제어방법 |
FI20096021A0 (fi) | 2009-10-06 | 2009-10-06 | Wallac Oy | Optinen mittausinstrumentti |
JP5037669B2 (ja) * | 2010-10-21 | 2012-10-03 | 日野自動車株式会社 | 出力制限制御装置、ハイブリッド自動車および出力制限制御方法、並びにプログラム |
CN102738027B (zh) * | 2011-04-13 | 2015-04-01 | 中芯国际集成电路制造(上海)有限公司 | 热处理设备及其温度校准方法和装置 |
JP5973173B2 (ja) * | 2012-01-23 | 2016-08-23 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理装置の制御方法 |
DE102012101717A1 (de) * | 2012-03-01 | 2013-09-05 | Aixtron Se | Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung |
DE102012217787B3 (de) * | 2012-09-28 | 2014-02-13 | Robert Bosch Gmbh | Verfahren und Vorrichtung zur Diagnose einer Einrichtung zur Bestimmung der Temperatur einer Komponente eines elektrischen Aggregates |
CN104131268B (zh) * | 2013-05-03 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 分区域加热方法、装置和半导体设备 |
DE102013109155A1 (de) | 2013-08-23 | 2015-02-26 | Aixtron Se | Substratbehandlungsvorrichtung |
CN103760753B (zh) * | 2013-12-31 | 2017-04-12 | 深圳市华星光电技术有限公司 | 基板烘烤装置及其温度调节方法 |
US9435692B2 (en) * | 2014-02-05 | 2016-09-06 | Lam Research Corporation | Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output |
CN104090604B (zh) * | 2014-06-30 | 2017-04-05 | 北京七星华创电子股份有限公司 | 热处理设备的温度补偿方法、温度控制方法及系统 |
CN104102247B (zh) * | 2014-06-30 | 2016-07-20 | 北京七星华创电子股份有限公司 | 热处理设备的温度补偿方法、温度控制方法及系统 |
CN105239058B (zh) * | 2015-09-25 | 2017-10-20 | 圆融光电科技股份有限公司 | 校准mocvd设备设定温度的方法 |
US10908195B2 (en) * | 2016-06-15 | 2021-02-02 | Watlow Electric Manufacturing Company | System and method for controlling power to a heater |
CN108873979B (zh) * | 2017-05-12 | 2020-08-07 | 台达电子工业股份有限公司 | 热控装置及其热控方法 |
JP6858077B2 (ja) * | 2017-05-25 | 2021-04-14 | アズビル株式会社 | コントローラ調整システムおよび調整方法 |
WO2018220690A1 (ja) * | 2017-05-29 | 2018-12-06 | 理化工業株式会社 | 制御系設計装置及び制御システム |
US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
CN110053798B (zh) * | 2019-05-29 | 2021-08-17 | 福建中烟工业有限责任公司 | 小盒烟包热封方法 |
CN110181391A (zh) * | 2019-06-03 | 2019-08-30 | 西安奕斯伟硅片技术有限公司 | 研磨液供给装置、研磨设备和研磨液的温度控制方法 |
CN110309610A (zh) * | 2019-07-08 | 2019-10-08 | 重庆科技学院 | 一种基于改进遗传算法的粮食库温度场重构方法 |
CN111256857A (zh) * | 2020-02-25 | 2020-06-09 | 上海华力集成电路制造有限公司 | 通过测试bjt发射结电压来监控探针台卡盘温度的方法 |
CN114200976A (zh) * | 2020-09-17 | 2022-03-18 | 欧姆龙株式会社 | 控制方法、控制装置以及记录介质 |
US20210223805A1 (en) * | 2020-12-23 | 2021-07-22 | Intel Corporation | Methods and apparatus to reduce thermal fluctuations in semiconductor processors |
CN114808143B (zh) * | 2022-06-28 | 2022-09-02 | 江苏邑文微电子科技有限公司 | 晶圆加热设备的参数确定模型训练方法、加热方法和装置 |
CN117873202B (zh) * | 2023-12-20 | 2024-07-12 | 苏州然玓光电科技有限公司 | 基于性能稳定性的光学仪器温度控制方法及系统 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145606A (ja) * | 1984-12-19 | 1986-07-03 | Ohkura Electric Co Ltd | 干渉対応形パタ−ン切換式温度制御装置 |
US5895596A (en) * | 1997-01-27 | 1999-04-20 | Semitool Thermal | Model based temperature controller for semiconductor thermal processors |
US5900177A (en) * | 1997-06-11 | 1999-05-04 | Eaton Corporation | Furnace sidewall temperature control system |
DE19755980A1 (de) * | 1997-12-17 | 1999-06-24 | Mannesmann Vdo Ag | Pedal |
JP4551515B2 (ja) * | 1998-10-07 | 2010-09-29 | 株式会社日立国際電気 | 半導体製造装置およびその温度制御方法 |
US6349270B1 (en) * | 1999-05-27 | 2002-02-19 | Emcore Corporation | Method and apparatus for measuring the temperature of objects on a fast moving holder |
JP3870002B2 (ja) * | 2000-04-07 | 2007-01-17 | キヤノン株式会社 | 露光装置 |
US6951998B2 (en) * | 2000-04-14 | 2005-10-04 | Omron Corporation | Controller, temperature regulator and heat treatment apparatus |
JP4493192B2 (ja) * | 2000-09-13 | 2010-06-30 | 東京エレクトロン株式会社 | バッチ式熱処理装置及びその制御方法 |
JP3834216B2 (ja) * | 2000-09-29 | 2006-10-18 | 株式会社日立国際電気 | 温度制御方法 |
-
2004
- 2004-10-13 JP JP2004298803A patent/JP2006113724A/ja active Pending
-
2005
- 2005-09-27 KR KR1020050089623A patent/KR100707097B1/ko not_active IP Right Cessation
- 2005-09-28 EP EP05021191A patent/EP1647868B1/de not_active Not-in-force
- 2005-10-06 US US11/245,727 patent/US7324877B2/en not_active Expired - Fee Related
- 2005-10-12 TW TW094135439A patent/TWI281694B/zh not_active IP Right Cessation
- 2005-10-13 CN CNB2005101140151A patent/CN100454184C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060161365A1 (en) | 2006-07-20 |
US7324877B2 (en) | 2008-01-29 |
KR100707097B1 (ko) | 2007-04-13 |
CN100454184C (zh) | 2009-01-21 |
KR20060051656A (ko) | 2006-05-19 |
EP1647868B1 (de) | 2011-08-03 |
JP2006113724A (ja) | 2006-04-27 |
EP1647868A1 (de) | 2006-04-19 |
TW200627513A (en) | 2006-08-01 |
CN1760774A (zh) | 2006-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI281694B (en) | Control process, temperature control process, temperature regulator, heat treatment and recordable medium | |
JP4493192B2 (ja) | バッチ式熱処理装置及びその制御方法 | |
TWI579674B (zh) | 用於控制在處理腔室中之多個區域加熱器之溫度之方法及裝置 | |
TWI743596B (zh) | 基板處理裝置及基板處理裝置之調整方法 | |
JP6930119B2 (ja) | 加熱装置及び基板処理装置 | |
JP4285759B2 (ja) | 基板処理装置及び基板処理方法 | |
KR20070004421A (ko) | 제어 방법, 온도 제어 방법, 조정 장치, 온도 조절기,프로그램, 기록 매체 및 열처리 장치 | |
JP2006220408A (ja) | 温度制御方法、温度制御装置、熱処理装置およびプログラム | |
KR101482039B1 (ko) | 열처리 장치 및 열처리 방법 | |
TW201306640A (zh) | 電阻加熱加熱器之劣化檢測裝置及方法 | |
KR100882633B1 (ko) | 열처리 장치, 열처리 방법, 제어 장치 및 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 | |
US6780795B2 (en) | Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects | |
EP2771668B1 (de) | Klimaprüfsystem und -verfahren mit in-situ-temperaturmessung eines prüflings | |
JP5028939B2 (ja) | 異常検出装置、異常検出方法、温度調節器および熱処理装置 | |
JP6401350B2 (ja) | 試料の熱分析時における温度調整の較正方法 | |
JPH03145121A (ja) | 半導体熱処理用温度制御装置 | |
US20240169123A1 (en) | Information processing apparatus, information processing method, and storage medium thereof | |
JP2006155169A (ja) | 温度制御方法、温度調節器および熱処理システム | |
JP2006099352A (ja) | 温度推定装置およびこれを用いた制御装置 | |
JP2024086226A (ja) | 加熱炉のシミュレーションシステム | |
JP4009861B2 (ja) | 温度制御方法、温度調節器および熱処理装置 | |
JPH04126993A (ja) | 熱間等方圧加圧装置の断熱層の劣化判定方法 | |
JP2006135126A (ja) | 半導体基板の熱処理方法 | |
JPH0758080A (ja) | プラズマ処理方法およびプラズマ処理装置ならびにその温度制御方法 | |
JP2007079897A (ja) | 温度制御方法、温度調節器および熱処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |