TWI275452B - Electropolishing assembly and methods for electropolishing conductive layers - Google Patents
Electropolishing assembly and methods for electropolishing conductive layers Download PDFInfo
- Publication number
- TWI275452B TWI275452B TW091133283A TW91133283A TWI275452B TW I275452 B TWI275452 B TW I275452B TW 091133283 A TW091133283 A TW 091133283A TW 91133283 A TW91133283 A TW 91133283A TW I275452 B TWI275452 B TW I275452B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- nozzle
- electrolyte liquid
- conductive member
- chuck
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 143
- 239000003792 electrolyte Substances 0.000 claims abstract description 227
- 235000012431 wafers Nutrition 0.000 claims description 383
- 239000007788 liquid Substances 0.000 claims description 253
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- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
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- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
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- 229910052719 titanium Inorganic materials 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 8
- 229910001431 copper ion Inorganic materials 0.000 description 8
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- 229920002449 FKM Polymers 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001070941 Castanea Species 0.000 description 1
- 235000014036 Castanea Nutrition 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Robotics (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33241701P | 2001-11-13 | 2001-11-13 | |
| US37256702P | 2002-04-14 | 2002-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200300376A TW200300376A (en) | 2003-06-01 |
| TWI275452B true TWI275452B (en) | 2007-03-11 |
Family
ID=26988208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091133283A TWI275452B (en) | 2001-11-13 | 2002-11-13 | Electropolishing assembly and methods for electropolishing conductive layers |
Country Status (8)
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205166B2 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties |
| CA2491951A1 (en) * | 2002-07-22 | 2004-01-29 | Acm Research, Inc. | Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers |
| JP2005082843A (ja) * | 2003-09-05 | 2005-03-31 | Ebara Corp | 電解液管理方法及び管理装置 |
| JP2005120464A (ja) * | 2003-09-26 | 2005-05-12 | Ebara Corp | 電解加工装置及び電解加工方法 |
| US7224456B1 (en) * | 2004-06-02 | 2007-05-29 | Advanced Micro Devices, Inc. | In-situ defect monitor and control system for immersion medium in immersion lithography |
| WO2007035408A1 (en) * | 2005-09-19 | 2007-03-29 | Applied Materials, Inc. | Method for stabilized polishing process |
| US7837850B2 (en) * | 2005-09-28 | 2010-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating systems and methods |
| US20070181441A1 (en) * | 2005-10-14 | 2007-08-09 | Applied Materials, Inc. | Method and apparatus for electropolishing |
| JP5012252B2 (ja) | 2007-06-25 | 2012-08-29 | ヤマハ株式会社 | 磁気データ処理装置、方法およびプログラム |
| DE102007044091A1 (de) * | 2007-09-14 | 2009-03-19 | Extrude Hone Gmbh | Verfahren und Vorrichtung zur elektochemischen Bearbeitung |
| US8496511B2 (en) * | 2010-07-15 | 2013-07-30 | 3M Innovative Properties Company | Cathodically-protected pad conditioner and method of use |
| US9255339B2 (en) * | 2011-09-19 | 2016-02-09 | Fei Company | Localized, in-vacuum modification of small structures |
| KR101300325B1 (ko) * | 2011-12-21 | 2013-08-28 | 삼성전기주식회사 | 기판 도금 장치 및 그 제어 방법 |
| CN102601471B (zh) * | 2012-03-28 | 2013-07-24 | 华南理工大学 | 一种空间曲线啮合齿轮机构的精加工方法 |
| CN103590092B (zh) * | 2012-08-16 | 2017-05-10 | 盛美半导体设备（上海）有限公司 | 一种电化学抛光/电镀装置及方法 |
| TWI529893B (zh) * | 2012-09-01 | 2016-04-11 | 萬國半導體股份有限公司 | 帶有底部金屬基座的半導體器件及其製備方法 |
| JP6186499B2 (ja) * | 2013-05-09 | 2017-08-23 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | ウェハのメッキおよび／または研磨のための装置および方法 |
| CN105088328B (zh) * | 2014-05-07 | 2018-11-06 | 盛美半导体设备（上海）有限公司 | 电化学抛光供液装置 |
| TWI647343B (zh) * | 2014-05-16 | 2019-01-11 | 盛美半導體設備（上海）有限公司 | Apparatus and method for electroplating or electropolishing bracts |
| CN105316755B (zh) * | 2014-07-29 | 2019-06-25 | 盛美半导体设备（上海）有限公司 | 电化学抛光设备 |
| CN105312999A (zh) * | 2014-07-29 | 2016-02-10 | 盛美半导体设备（上海）有限公司 | 无应力抛光设备及其工艺腔体 |
| CN104241159B (zh) * | 2014-09-19 | 2018-04-03 | 中海阳能源集团股份有限公司 | 太阳能发电支架液体镀层及测量一体装置 |
| CN105448817B (zh) * | 2014-09-29 | 2020-05-19 | 盛美半导体设备(上海)股份有限公司 | 一种电化学抛光金属互连晶圆结构的方法 |
| CN106567130A (zh) * | 2015-10-10 | 2017-04-19 | 盛美半导体设备（上海）有限公司 | 一种改善晶圆粗糙度的方法 |
| CN105780101B (zh) * | 2016-01-27 | 2018-06-26 | 杨继芳 | 一种新型电解抛光设备 |
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| CN106352782A (zh) * | 2016-11-24 | 2017-01-25 | 中国航空工业集团公司金城南京机电液压工程研究中心 | 一种高温电涡流传感器及制作方法 |
| CN106625033B (zh) * | 2016-12-09 | 2018-12-18 | 天津津航技术物理研究所 | 一种确定单点金刚石车削刀痕抛光去除特性的方法 |
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| CN109423688B (zh) * | 2017-08-31 | 2022-03-22 | 深圳市水佳鑫科技有限公司 | 电化学处理液循环系统及设备 |
| CN111250805A (zh) * | 2020-03-20 | 2020-06-09 | 南京航空航天大学 | 金属粗糙表面的飞行式电解铣削整平方法 |
| CN111230727B (zh) * | 2020-03-28 | 2024-08-02 | 苏州赛森电子科技有限公司 | 一种真空镀膜工艺中硅片单面抛光装置及单面抛光方法 |
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| CN111958478B (zh) * | 2020-07-27 | 2024-06-18 | 浙江工业大学 | 基于氧化膜状态主动控制的轴承滚子elid研磨装置 |
| JP7678125B2 (ja) | 2021-03-04 | 2025-05-15 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨における絶縁流体ライン |
| CN114951858B (zh) * | 2022-05-17 | 2024-05-10 | 哈尔滨工业大学 | 一种光纤激光与管电极电解复合用光电液耦合装置 |
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| JP2000087295A (ja) * | 1998-09-09 | 2000-03-28 | Matsushita Electronics Industry Corp | 電解メッキ方法、電解メッキ装置及び半導体装置の製造方法 |
| US6120607A (en) * | 1998-12-03 | 2000-09-19 | Lsi Logic Corporation | Apparatus and method for blocking the deposition of oxide on a wafer |
| US6582578B1 (en) * | 1999-04-08 | 2003-06-24 | Applied Materials, Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| US6444101B1 (en) * | 1999-11-12 | 2002-09-03 | Applied Materials, Inc. | Conductive biasing member for metal layering |
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2002
- 2002-11-13 US US10/495,206 patent/US20040238481A1/en not_active Abandoned
- 2002-11-13 CA CA002464423A patent/CA2464423A1/en not_active Abandoned
- 2002-11-13 JP JP2003544243A patent/JP2005509746A/ja active Pending
- 2002-11-13 CN CNB028225864A patent/CN100497748C/zh not_active Expired - Lifetime
- 2002-11-13 KR KR1020047007132A patent/KR20050044404A/ko not_active Withdrawn
- 2002-11-13 EP EP02789648A patent/EP1446514A4/en not_active Withdrawn
- 2002-11-13 TW TW091133283A patent/TWI275452B/zh active
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| WO2003042433A1 (en) | 2003-05-22 |
| JP2006316352A (ja) | 2006-11-24 |
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| CN1585835A (zh) | 2005-02-23 |
| EP1446514A4 (en) | 2007-11-28 |
| JP2007016320A (ja) | 2007-01-25 |
| KR20050044404A (ko) | 2005-05-12 |
| CA2464423A1 (en) | 2003-05-22 |
| JP2005509746A (ja) | 2005-04-14 |
| JP2006291361A (ja) | 2006-10-26 |
| CN100497748C (zh) | 2009-06-10 |
| US20040238481A1 (en) | 2004-12-02 |
| EP1446514A1 (en) | 2004-08-18 |
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