TWI275452B - Electropolishing assembly and methods for electropolishing conductive layers - Google Patents

Abstract

In one aspect of the present invention, an exemplary apparatus and method are provided for electropolishing a conductive film on a wafer. An apparatus includes a wafer chuck for holding a wafer, an actuator for rotating the wafer chuck, and a nozzle configured to electropolish the wafer. The apparatus may further include a conductive ring or a shroud. A method of electropolishing a conductive film on a wafer includes rotating a wafer chuck with sufficient speed such that electrolyte fluid incident upon the wafer flows on the surface of the wafer towards the edge of the wafer.

Description

1275452 A7 ___B7__ V. OBJECT DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates generally to semiconductor processing devices, and more specifically, (please read the notes on the back side and then fill out this page) An electropolishing device for a conductive layer on the device. Prior Art Semiconductor devices are fabricated or fabricated on semiconductor wafers using a number of different processing steps to produce transistors and interconnect components. In order to electrically connect the semiconductor wafer-related transistor terminals, conductive (e.g., metal) trenches, vias, are formed in the dielectric material to form part of the semiconductor device. Electrical signals and electrical power between the trench and the contact hole coupling transistor, between the internal circuits of the semiconductor device, and between the external circuits of the semiconductor device. Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative Printed In the formation of semiconductor interconnect components, semiconductor wafers are subjected to, for example, masking, uranium engraving, and deposition processes to form the desired electronic circuitry for semiconductor devices. Specifically, multiple masking and etching steps may be performed to form one of the recessed regions in a dielectric layer (on a semiconductor wafer) that acts as interconnecting trenches and contact holes. A deposition process can then be performed to deposit a metal layer on the semiconductor wafer, whereby the sink is in the trenches and contact holes, and on the non-recessed areas of the semiconductor wafer. In order to isolate the interconnects (such as shaped trenches and contact holes), the metal deposited on the non-recessed regions of the semiconductor wafer is removed.

Conventional methods for removing a metal film deposited on a non-recessed region of a dielectric layer on a semiconductor wafer include, for example, chemical mechanical polishing (CMP) paper size applicable to China National Standard (CNS) A4 specification (210X297 mm) ) -5 - 1275452 A7 B7 V. Description of invention (2)). CMP methods are widely used in the semiconductor industry to polish and planarize metal layers in trenches and contact holes with non-recessed regions of the dielectric layer to form interconnect lines. In the CMP process, a wafer composition is placed on a CMP pad on a platform or network. The wafer composition includes a substrate having one or more layers and/or features, such as interconnecting elements formed in a dielectric layer. A force is then applied to press the wafer onto the CMP pad. The CMP pad and substrate components move relative to each other when force is applied to polish and planarize the surface of the wafer. A polishing solution (commonly referred to as a slurry) typically contains a polishing compound and chemically reacts to remove unwanted material (eg, a metal layer) from the wafer more quickly than other materials (eg, Dielectric material). However, the CMP method may have an adverse effect on the underlying semiconductor structure because of its relatively strong mechanical forces. For example, when the interconnect shape reaches 0.13 microns or less, there may be a significant difference between the mechanical properties of a conductive material (eg, copper used in a typical damascene process and a low-k film), for example, a low-k dielectric film. The modulus may be lower than the Young's modulus of copper by more than 10 orders. Therefore, the relatively strong mechanical force exerted on the dielectric film and copper during a CMP process, among other things, may cause stress-related defects on the semiconductor substrate, including delamination and concave distortion (dishing) ), corrosion, film bulging, scratches, and so on. Therefore, new manufacturing technologies are needed. For example, an electropolishing process can be used to remove or etch a metal layer from a wafer. Usually, in an electropolishing process, the portion of the wafer to be polished is immersed in the electrolyte solution, and then the paper is supplied to the Chinese National Standard (CNS) Α4 specification (210X 297 mm) (please read the back) Please fill out this page again) • Install·

, 1T Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing -6- 1275452 A7 _ B7_ _ V, invention description (3) to the wafer. These conditions cause the copper to be removed or polished from the wafer. (Please read the note on the back and then fill out this page.) Contents In one aspect of the invention, an exemplary apparatus and method for electrolytically polishing a conductive film on a wafer is provided. An exemplary device includes a chuck for holding a wafer, an actuator for rotating the wafer chuck, a nozzle for electrolytically polishing the wafer, and a shield placed around the edge of the wafer. (shroud). An exemplary method of electropolishing a conductive film on a wafer includes rotating a wafer chuck at a sufficient speed such that the electrolyte liquid incident on the wafer flows over the surface of the wafer toward the edge of the wafer. The following detailed description of the invention will be best understood from the following description of the drawings and claims. Embodiments Ministry of Economics Intellectual Property Office Staff Consumer Cooperative Print In order to provide a more thorough understanding of the present invention, the following description sets forth certain details, such as specific materials, parameters, and the like. However, it is to be understood that the description is not intended to limit the scope of the invention I. Exemplary Electro-Polishing Apparatus: Figures 1A and 1B show a cross-sectional and top view of an exemplary wafer electropolishing apparatus that can be used to polish wafer 1004. Broadly speaking, an exemplary electropolishing apparatus operates by directing a flow of electrolyte liquid toward a metal film on a wafer while supplying a charge to the wafer. Charge and electrolyte liquid This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1275452 A7 B7 V. Description of invention (4) Causes metal ions in the metal film to dissolve in the electrolyte liquid. The current density of the electrolyte liquid and the concentration of metal ions in the electrolyte liquid determine (at least in part) the rate of polishing. Therefore, by controlling the current density, the concentration of the electrolyte solution, and the like, the electropolishing apparatus can precisely polish the metal layer disposed on the semiconductor wafer. As shown in FIG. 1A, the electropolishing apparatus can include a chuck 1002, an actuator 1000, and a polishing receptacle 1008. Polishing vessel 1008 can be formed of any material that is electrically insulating and resistant to acids and corrosion, such as polytetrafluoroethylene (commercially known as TEFLON), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), polypropylene, and many more. Polishing vessel 1008 is preferably formed from PVDF. However, it should be understood that the polishing container 1008 can be formed of different materials depending on the application. As shown in FIG. 1A, electrolyte liquid 1038 can flow into polishing vessel 1008 through nozzles 1010, 1012, and/or 1014. More specifically, pump 1020 pressurizes electrolyte liquid reservoir 1070 past check valve 1024 to flow through filter 1018. The flow through filter can include liquid mass flow controllers (LMFCs) that control the amount and rate of electrolyte liquid 1038 delivered to nozzles 1010, 1012, and 1014. In addition, the flow through filter 1018 can circulate contaminants from the electrolyte liquid 1038 to reduce the amount of contaminants that may enter the polishing vessel 1008 through the nozzles 1010, 1012, or 1014, possibly degrading the electropolishing process or blocking the LMFCs ( If there is any use). In the present example, the flow through filter 1 〇 18 desirably removes particles greater than about 0.05 to about 0.1 microns. However, it should be understood that different filtration systems may be used depending on the particular application. In addition, although the standard size of the filter paper is applicable to the Chinese National Standard (CNS) A4 specification (2 Sichuan X 297 mm) (please read the note on the back and fill out this page) - Installed and subscribed to the Intellectual Property Office of the Ministry of Economic Affairs Co-operative Printing -8- Ministry of Economic Affairs Intellectual Property Office Employees Consumption Cooperative Printed 1275452 A7 B7 V. Invention Note (5) It is advantageous that the wafer polishing assembly may omit the flow filter 101 8 in some applications. Electrolyte liquid 1038 can comprise any convenient electropolishing liquid, such as phosphoric acid, and the like. Electrolyte liquid 1038 preferably comprises orthophosphoric acid (H3P〇4) having a concentration of between about 60 weight percent and about 85 weight percent, and more desirably about 76 weight percent. Further, electrolyte liquid 1038 preferably comprises from about 10 to 40 weight percent ethylene glycol, the remainder comprising water and H3P〇4 acid having about 1% aluminum metal (relative to the weight of the acid). However, the concentration and composition of the electrolyte liquid 1038 can vary depending on the particular application. Pump 1020 can comprise any suitable hydraulic pump, such as a centrifugal pump, a diaphragm, a bellow, and the like. In addition, the chestnut 1020 is resistant to acid, corrosion, and contamination. While only one pump 1020 is shown, it should be understood that any number of pumps 1020 can be used. For example, a separate pump can be used at each nozzle 1 01 0, 1 01 2, and 1 014. Additionally, in some applications, the electrolyte liquid 103 8 can pass through the nozzles 1010, 1012, and 1014 to flow into the polishing vessel 1008 without the need for the pump 1020. For example, the electrolyte liquid 1038 can be maintained at a certain pressure in the electrolyte liquid reservoir 1A70. On the other hand, the supply line between the electrolyte liquid reservoir 1070 and the nozzles 1010, 1012, and 1014 can be maintained at a certain pressure. LMFCs can include any convenient bulk flow controller that is more desirable to withstand acid, corrosion, and contamination. In addition, the LMFCs deliver the electrolyte liquid 1038 to the nozzles 1〇1〇, 1〇12, and 1014 at a fixed flow rate. In addition, the LMFCs can properly deliver the electrolyte liquid 丨〇38 in proportion to the nozzle paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 public celebration) one - -9 - (please read the back note first and then fill in This page) 1275452 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 _ B7 V. Invention description (6) 1 流10, 101 2, and 1014 cross-sectional area flow rate. For example, if the diameter of the nozzle 1012 is larger than the nozzle 1014, the LMFCs can advantageously deliver the electrolyte liquid 1038 to the nozzle 1012 at a greater flow rate. In the exemplary embodiment, the LMFCs are preferably configured to deliver an electrolyte liquid 1038 at a flow rate between 0.5 liters per minute and 40 liters per minute, depending on nozzle size, nozzle-to-wafer distance, and the like. . The electrolyte liquid reservoir 1070 can further include a heat exchanger 1036, a chiller/heater 1034, and a temperature sensor 1032 for controlling the temperature of the electrolyte liquid 1038 in the electrolyte liquid reservoir 1070. Further, more than one electrode 1028 can be included in the reservoir 1070 and coupled to the power supply 1030. The application of charge to the electrode 1028 removes metal ions from the electrolyte liquid 1038, thereby adjusting the metal ion concentration of the electrolyte liquid 1038. An opposite charge can also be applied to electrode 1028 to increase metal ions to electrolyte liquid 1038. The exemplary wafer polisher assembly further includes electrodes disposed within nozzles 1012 and 1014. As will be described in more detail below, while the exemplary embodiment includes two nozzles having two electrodes therein, any number of nozzles and the number of electrodes per nozzle, whether less than or greater than two, can be used. Generally, increasing the surface area of the electrode in a nozzle increases the current density and the rate of electropolishing that encompasses the profile of the flow of electrolyte liquid 1038. As shown in Figures 1D and 1E, nozzles 1012 and 1014 individually include electrodes 1056 and 1060. Electrodes 1056 and 1060 can comprise any conductive metal such as copper, stainless steel, giant (Ta), titanium (Ti), TaN, TiN, lead, platinum, and the like. This paper size applies to China National Standard (CNS) A4 specification (210X297 public (please read the back note first and then fill out this page) -10- 1275452 A7 _ B7 V. Invention description (7) During the electropolishing process, some Metal ions, which migrate away from the metal layer on wafer 1004, may accumulate on electrodes 1〇56 and 1〇6〇. (Please read the back note first and then fill out this page) As will be described in more detail below, Metal accumulation or plating can be removed in a stripping process. For example, when electrodes 1056 and 1060 are positively charged and wafer 1002 is negatively charged, wafer 1〇〇4 is electroplated rather than electrolytically polished. In this and similar manner, the metal mineralized on electrodes 1056 and 1060 can be removed, i.e., electroplated. On the other hand, electrodes 1056 and 1060 can be suitably replaced at any suitable time. For example, electrodes 1056 and 1060 It can be replaced after processing about 100 wafers. In some examples, the metal layer can comprise copper. Therefore, some copper ions from the polished metal layer migrate to the plated electrodes 1056 and 1060 during the electropolishing process. however If electrodes 1056 and 1060 contain copper, electrodes 1056 and 1060 may be deformed by dissolution during the plating process. Thus, in some instances, electrodes 1056 and 1060 are desirably comprised to resist materials that are dissolved during the removal of the ore. For example, electrodes 1056 and 1060 can comprise platinum and a platinum alloy. Alternatively, electrodes 1056 and 1060 can comprise titanium suitably coated with a layer of platinum, for example, having a thickness of from about 50 microns to about 400 microns. The bureau employee consortium is printed in the exemplary device, and the wafer chuck 1002 properly holds and positions the wafer 1004 in or on the polishing container 1008. More specifically, the wafer 1004 is properly positioned to face the nozzle 1010, 1012, and 1014 are in shield 1006. Shield 1006 can be selectively included around wafer 1004 to avoid splashing, etc., as will be described in more detail below. Wafer 1004 is suitably positioned in polishing container 1008 After that, the electrodes 1056 and 1060 are charged by the power supply 1〇4〇. In addition, the wafer size is 适用4. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇><297 mm) -11 - 1275452 A7 _B7 V. Description of invention (8) (Please read the note on the back and fill out this page) Charged by the power supply 1040. Alternatively, more than one power supply can be used to charge electrodes 1056 and 1060 and wafer 1004. When properly charged and electrolyte liquid 1038 flows between electrodes 1056 and 1060 in nozzles 1012 and 1014 and the surface of wafer 1004, a current is formed. More specifically, electrodes 1056 and 1060 are charged to have a negative potential compared to wafer 1004. In response to this negative potential on electrodes 1056 and 1060, the metal ions migrate away from wafer 1004 into electrolyte liquid 1038, thus electropolishing the crystal 1004. However, when the polarity of the circuit is reversed, the metal ions migrate toward the wafer 1004, thus plating the wafer 1004. Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printing In addition, as shown in FIGS. 1A and 1C, the nozzle 1010 includes an injection nozzle 1052 and a termination point detector 1016. During the electropolishing process, the injection nozzle 1052 can be configured to supply the electrolyte liquid 1038, and the termination point detector 1016 can be configured to detect the thickness of the metal layer on the wafer 1004. Termination Point Detector 1016 can include various sensors, such as ultrasonic sensors, optical reflective sensors, electromagnetic sensors (such as eddy current sensors), and the like. The electrolyte liquid 1038 supplied from the injection nozzle 1052 functions as a medium through which the end point detector 1016 emits a signal and measures the thickness of the metal film. The use of electrolyte liquid 103 8 as a single medium to transmit signals increases the accuracy of the measurements performed by end point detector 1016 because electrolyte liquid 1038 provides a single phase. Conversely, if the injection nozzle 1052 does not provide the electrolyte liquid 1038, the emission and measurement from the termination point detector can be passed through various other media, such as air, etc., through the electrolyte supplied to the wafer 1004 by the nozzle 1012 or nozzle 1014. Before the liquid 1038. As will be described below, there are electrolyte liquids that may change with time. The paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -12- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumption Cooperative Print 5, the updated or immediate characteristics of the invention description (9) can also increase the accuracy of the termination point measurement. Again, although a nozzle 1010 having a termination point detector 1016 is shown, any number of nozzles having any number of termination point detectors can be used. As further shown in FIG. 1A, the actuator 1 〇 〇 can rotate the wafer chuck 1002 and the wafer 1004 about the z-axis. Moreover, in some applications, actuator 1000 can move wafer chuck 1002 and wafer 1004 along the X-axis while nozzles 1010, 1012, and 1014 remain stationary. In other applications, nozzles 1010, 1012, and 1014 can be moved along the X axis while 1002 and wafer 1004 remain stationary along the X axis. In still other applications, the actuator 1000 can move the wafer chuck 1002 and wafer 1004 along the X axis, while the nozzles 1010, 1012, and 1014 also move along the X axis. Additionally, the plating apparatus can be oriented in other ways. For example, nozzles 1010, 1012, and 1014 can be positioned over wafer 1004 such that their electrolyte liquid is directed downward toward wafer 1004. Additionally, wafer 1004 can be oriented perpendicular to nozzles 1010, 1012, and 1014, while nozzles 1010, 1012, and 1014 direct electrolyte liquid toward wafer 1〇〇4. For a discussion of an exemplary wafer electropolishing apparatus, see U.S. Patent No. 6,395,152, filed on Jul. 2, 1999, entitled "METHODS AND APPARATUS FOR ELECTROPOLISHING METAL INTERCONNECTIONS 〇N SEMICONDUCTOR DEVICES", which is incorporated herein by reference. for reference. Further, for an additional discussion of the exemplary end point detectors, see U.S. Patent No. 6,447,688, filed on May 12, 2000, entitled "METHODSANDAPPARATUS FOREND-POINT DETECTION" which is incorporated herein by reference. (Please read the note on the back and fill out this page.) This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -13- 1275452 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 _ B7 V. Invention Description (Electrolyte Liquid Splash Protection An exemplary electrolytic polishing method includes rotating a wafer 1 0 0 4 when the electrolyte liquid 1038 is directed to the surface of the wafer 1004. The wafer 1〇〇4 is rotated at a rate This rate is sufficient to cause centrifugal force that causes the incoming electrolyte liquid 1038 to flow across the surface of the wafer 1004 toward the edge of the wafer 1004. Preferably, the electrolyte liquid 1038 flows to the edge of the wafer 1004 before it falls from the surface. By directing this flow across the surface of the wafer 1004, the liquid can be prevented from falling off the wafer surface and interrupting the flow of the electrolyte liquid 1038 or forming a continuous array of electrolyte liquids in the polishing vessel 1008. However, this process may result in electrolytes. The liquid splashes into the container to overflow the device or interrupt the flow of electrolyte liquid. Thus, an exemplary electrolytic polishing device includes a shield 1006 that is tied Around the wafer 1004, to reduce or prevent liquid that has been subjected to centrifugal force from splashing in the polishing container 1008 or overflowing from the polishing container 1008. Figures 1A and 1B show a shield 1006 that is configured to surround the wafer 1004 and the wafer chuck 1002. As shown in Figure 1A, the nozzle 1012 can supply an electrolyte liquid to the surface of the wafer 1004. To more uniformly polish one of the metal films on the wafer 1004, the wafer 1004 can be rotated in a manner to cause electrolyte liquid 1038 flows across wafer 1004 to the exposed portion of chuck 1〇〇2, but does not allow electrolyte liquid to fall from the surface of wafer 1004 into polishing container 1008. Any drop from wafer 1004 and form one continuous column of electrolyte liquid The electrolyte liquid between 1004 and the polishing vessel 1008 may cause excessive polishing of the wafer 1004 in which the column is formed. Additional polishing may result in uneven and unpredictable polishing rates of the metal layer. Fill in this page again. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -14- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Office employees Co., Ltd. Printing 5, invention description (d In addition, any electrolyte liquid falling from the wafer 1004 or splashing in the polishing container 1008 may disturb the flow of the electrolyte liquid supplied by the nozzle 1 0 12. The shape of the electrolyte liquid 1038 or The (more specifically) profile thus affects the current pick and polishing rate of the electropolishing apparatus and thus it is desirable to have the electrolyte liquid 1 038 flow along the surface of the wafer 1004 toward the edge of the wafer 1004 and away from it to the wafer 1004. The electrolyte liquid 丨 038 flows. Wafer 1 004 can be rotated at a suitable rotational speed, depending on the viscosity of the electrolyte liquid, which is used to cause electrolyte liquid to flow across wafer 1004 toward the edge of wafer 1004 or to the chuck 1〇〇2 Exposed part. The rotational speed should be such that its electrolyte liquid 1038 can flow across the wafer 1004 without falling from the surface of the wafer 1004 and forming a continuous array, or interfering with the flow of the electrolyte liquid 1038. Clearly, the lower the viscosity of the electrolyte liquid, the higher the centrifugal acceleration is required. For example, for 85% phosphoric acid, the centrifugal acceleration can be selected to be above about 1.5 meters per second. In an exemplary method, a 300 mm diameter wafer is rotated in the range of about 100 revolutions per minute (rpm) to more than about 2,000 rpm, and preferably in the range of from about 1,500 to about 2,000 rpm. Typically, nozzle 1012 or 1014 will scan the entire surface of wafer 1004 to more uniformly polish wafer 1004. Wafer 1004 can be rotated to produce a constant centrifugal acceleration on incoming electrolyte liquid 1038 as nozzle 1012 is scanning different portions of wafer 1004. For example, a centrifugal acceleration system is directly proportional to its radial distance from the center of the wafer and the square of the rotational speed. Therefore, the speed at which the wafer 1004 is rotated can be reduced when the nozzle 1012 or 1014 is polishing its portion of the wafer near the edge of the wafer 1004 (ie, large I* (please read the back of the note first) Matters refill this page) This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -15 - 1275452 A7 B7 V. Invention description (^ radius), and increases when polishing it close to the center of the wafer 1004 In some cases (ie, a small radius). Typically, when the electrolyte solution system is supplied to the wafer 1004 in the manner described above, the electrolyte liquid may flow toward the edge of the wafer 1004 and across the edge of the wafer 1004 toward the polishing container 1008. If there is no shielding 1006, the electrolyte liquid 1038 may contact the wall of the polishing container 1008 and the splash in the polishing container 1008, thereby interrupting the flow of the electrolyte liquid 1 038 or overflowing from the polishing container 1008. As shown in Figures 1A and 1B, The shield 1006 can be placed around the wafer 1004 and the chuck 1002 to reduce or prevent the electrolyte liquid 1038 from splashing or spilling out of the polishing container 1008. Again, the shield 1006 can be used during the polishing process. The X direction is moved along with the chuck 1002 and the actuator 1000. Specifically, the shield 1006 can be attached to the chuck 1002 and/or the actuator 1000 by a mechanical attachment, joint, or the like. In another aspect, another movement that synchronizes the movement of the shield 1006 with the actuators of the chuck 1002 and the actuator 1000 can drive the shield 1006. The shield 1006 can also be rotated either inconsistently or inconsistently with the chuck 1002. It is formed in any suitable shape, such as a circle, a polygon, etc. Preferably, the shield 1006 is formed to reduce splashing of the electrolyte liquid 1038 (after it flows from the wafer 1004) and to contain the electrolyte liquid 1038 in the polishing container. 1008. The gap between the chuck 1002 and the shield 1〇〇6 may be, for example, in the range of about 1 mm to about 10 mm, and preferably about 5 mm. Further, as shown in FIG. 1A. The cross section of the side wall of the shield 1006 can be formed into the shape of L to prevent the electrolyte liquid from splashing on the paper scale. The Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 1 — ;----- -ί ^ —— (Please read the notes on the back first) Fill in this page) Order Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed - 16- 1275452 A7 B7 V. Invention Description (d Shield 1006 or chuck 1002. However, the cross section of shield 1006 can have various other shapes For example, the sidewall of the shield 1006 (i.e., the vertical portion of the L shape) may be formed into other shapes such as a C shape. In addition, the shield 1006 can be tapered or tapered to reduce splashing and the like. The shield 1006 can also extend further above or below the wafer 1004 and chuck 1002 shown in FIG. The shield 1006 can be made of plastic, ceramics, etc., or an anti-corrosive uranium metal or alloy such as giant, titanium, stainless steel, etc. in the 300 series. However, it should be understood that the method of electropolishing does not require its electrolyte liquid 1038 to flow through the edge of the wafer to reach the shield 1006. The problem of electrolyte liquid 1038 forming a continuous row with polishing vessel 1008 and splashing within or outside of polishing vessel 1008 can be reduced or avoided without the electrolyte liquid flowing completely through wafer 1004. For example, by simply rotating the wafer 1004 such that its electrolyte liquid flows along a portion of the surface of the wafer 1004 toward the edge of the wafer 1 004 before it falls from the wafer 1004, the undue effect can be reduced or avoided. III. Edge over-polishing Reduced to another type, an over-polishing electrolytic polishing method and apparatus for reducing over or near the edge of a wafer is described. Typically, portions located on or near the edge of a wafer are polished faster than portions of the metal layer on other regions of the wafer. An electrode connected to the edge of a wafer may increase its current density into the electrolyte liquid near the edge of the wafer, resulting in an increased polishing rate. Generally, 3, the paper size near the edge of the wafer is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back and fill out this page) • Install the Ministry of Economics intellectual property Bureau employee consumption cooperative printing -17-1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (" current density and polishing rate may be reduced by absorption of one part of the current density, which is a A conductive member (such as a ring or the like) placed at or near the edge of the wafer absorbs a portion of the current density through the electrolyte liquid. The current density near the edge can also be adjusted by charging the conductive member to change its absorption. The amount of current is used to control the current density to a greater extent. An exemplary apparatus and method for reducing edge over-polishing is shown with reference to Figure 7. An electrolyte liquid stream 7080 is supplied from the nozzle 7054 to the wafer 7004. 7004 is rotated at a sufficient rotational speed to form a thin layer 7081 of an electrolyte liquid that polishes one of the metal layers on wafer 7004. If an electrode is attached to the edge of wafer 7004, the metal layer at or near the edge of wafer 7004 is polished by thin layer 7081 of electrolyte liquid faster than the metal on other areas of wafer 7004. The metal layer near or near the edge of the wafer 7004 may become over-polished. The chuck 7002 includes a conductive member 7114 that reduces the amount of over-polishing at or near the edge of the wafer 7004. For example, the wafer 7004 and conductive members 7114 can be connected to power supply 7110 and charged such that one of the polishing currents in thin layer 708 1 of its electrolyte liquid is absorbed by conductive member 7114. By absorbing one portion of the polishing current, conductive member 7114 can be reduced at or The polishing rate of the metal layer near the wafer 7004 is reduced and over-polishing is avoided. The conductive member 7114 can include a single ring placed at or near the edge of the wafer 7004. Additionally, the conductive member can include its being disposed at or near Two or more sections of the edge of the wafer 7004. The conductive member 7114 may comprise a metal or alloy (such as giant, titanium, stainless steel, etc.), and other suitable (Please read the notes on the back and fill out this page.) This paper scale applies to China National Standard (CNS) A4 specification (210X 297 mm) -18- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention Description (^ Touching the conductive material of the electrolyte liquid 708 1. Further, the wafer 7〇〇4 can be placed between the wafer chuck 7002 and the conductive member 7114 as shown in Fig. 7. For example, a robot arm The wafer 7 004 can be placed adjacent to or between the wafer chuck 7002 and the conductive member 7114. Wafer chuck 7002 and conductive member 7114 can then be placed together or near to hold wafer 7004 therebetween. The exemplary assembly can then include additional components, such as a holder or locator, to align and hold the wafer chuck 7002 with the conductive member 7114, and align and hold the insulating member to the conductive member 7114 and to charge the wafer Between 7 and 4 joints. It should be understood that the exemplary apparatus depicted in Figure 7 may also include other features as shown in Figure 1, but such features have been omitted to illustrate a particular example. For example, shield 1 006 (Figs. 1A, 1 B) can be used with exemplary devices as well as various pumps, nozzles, filters, and the like. Figure 8A shows another exemplary electropolishing apparatus for reducing the polishing rate near the edge of a wafer. A chuck 8002 having a conductive member 8114 is shown that reduces the amount of over-polishing at or near the edge of the wafer 8004. Figure 8A is similar to Figure 7 except that its conductive member 8114 is separated from wafer 8004 by a spacer element 8118. Spacer element 8118 includes, for example, a 〇-shaped ring. The spacer element 8118 can be further formed from a material that is electrically insulating and further resistant to acids and corrosion, such as ceramics, polytetrafluoroethylene (commercially known as TEFLON), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF). ), polypropylene, silicone rubber, Viton rubber, and so on. Conductive member 8114 is coupled to power supply 8112 and a second conductive member or electrode (such as spring member) 8114 is coupled to power supply 8110. As shown in the figure, , 洚-- (please read the note on the back and fill out this page), τ This paper scale applies to China National Standard (CNS) Α4 specification (210 Χ 297 mm) -19- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (^ The current flowing through the conductive member 8114 can be adjusted or controlled by the power supply 8112 to control the polishing rate of the metal layer at or near the edge of the wafer 8004. That is, as the amount of current absorbed by the bottom chuck 8114 increases, the polishing rate of the metal layer at or near the edge of the wafer 8004 is reduced. The power supply 8 11 2 can be a DC power supply, a synchronous and main An AC power supply for polishing power supply 8110, etc. An AC power supply may also include a forward pulse power supply, and a forward and reverse power supply. Further, the power supply 8112 is operable in a constant current mode, a constant voltage mode, or a combination of constant current and constant voltage modes, wherein the constant current mode is suitable for one part of the polishing time and a constant voltage mode is suitable For other portions of the polishing time, a variable resistor may be used instead of the power supply 8 11 2 to supply a variable charge to the conductive member 8114 (see, for example, FIG. 9A). Further, a variable resistor may be used. Included between the electrically conductive member 8114 and the spring member 8119. The electrically conductive member 8114 can similarly comprise a metal or alloy, such as giant, titanium, stainless steel, etc., as well as other electrically conductive materials. Further, the electrically conductive member 8114 can comprise one or more At or near the edge of the wafer 8004. Thus, in this exemplary electropolishing apparatus, the charge applied to the wafer 8004 through the spring member 8119 and the conductive member 8114 can be independently independently of the power supplies 8110 and 8112. Control thus allows for greater control of the current density near the edge region of wafer 8004 to control and reduce over-polishing of the edge regions. Figure 8B shows the structure and connections of conductive member 8114 and wafer 8004 of Figure 8A. Magnified view. Clearly, the conductive member 8114 is powered by (please read the precautions on the back and fill out this page). Standard (CNS) A4 specification (210X297 mm) -20- 1275452 A7 ____ B7_ V. Description of the invention (^ Supply 8112 charged and isolated from wafer 8002 by spacer element 8118. Wafer 8004 is supplied by power supply 8110 Individually charged, the power supply 8110 is coupled to a spring member 8119 that is placed around the edge of the wafer 8004. The spring member 8119 provides charge to the wafer 8004, for example, placed around the edge of the wafer 8004. A plurality of electrodes are more evenly distributed. An insulating member 8121 can be placed between the conductive member 8114 and the spring member 8119 when charge is applied to the conductive member 8114 and the spring member 8119. The spring member 8119 can be formed as a coil spring in the form of a ring (see, for example, Fig. 8C), however, other cross-sectional profiles, such as an elliptical cross-sectional profile, can also be formed. In addition, any number of turns springs can be used depending on their application. The spring member can be formed from any convenient electrically conductive material such as stainless steel, spring steel, titanium, and the like. The spring member 8119 may also be formed of a corrosion resistant uranium material or coated with an anti-corrosion uranium material such as platinum, TiN, TaN or the like. The number of contact points formed between the wafer 8004 and the power supply can be varied by varying the number of coils in the spring member 8119. In this manner, the charge it supplies to wafer 8004 can be more evenly distributed around the periphery of wafer 8004. For example, for a 200 mm wafer, typically a charge of from about 1 to about 10 amps is applied. Forming spring member 8119 to create about 1000 contact points with wafer 8004 reduces charge to about 1 to about 10 milliamps per contact point. However, it should be understood that wafer 8004 can also be charged by one or more electrical contacts. Moreover, any mechanism for distributing charge around the wafer 8004 can be advantageously employed. This paper size is applicable to China National Standard (CNS) A4 specification (2!0X297 mm) (please read the note on the back and fill out this page) - Installed and subscribed to the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing - 21 - 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (^ When the conductive member 8114 is separated from the wafer 8004 by the spacer element 8118, if the spring member 8 119 is exposed to the electrolyte liquid A short circuit may result. Shorting of the spring member 8119 may reduce its uniformity of polishing rate near the edge portion of the wafer 8004. Thus, in one example, the spacer element 8118 acts as a seal to isolate the spring member 8119 from Electrolyte liquid. The spacer element 8 11 8 may be formed of a corrosion resistant uranium material, such as Viton (carbon fluorocarbon) rubber, siloxane rubber, etc. Further, the spacer element 8118 may have various shapes depending on its particular application and Figure 8C shows an exemplary wafer holder in conjunction with its exemplary electropolishing apparatus for reducing the polishing rate near the edge of the wafer. An exploded view of the holder. An exemplary wafer chuck includes a body having a base portion 8002 over the body and a conductive member 8114, wherein the wafer 8004 is held in the base portion 8002 of the body and electrically conductive The wafer chuck may further include a top holder (not shown) for clamping or holding the wafer 8004 and the assembly together. In addition to the first conductive member 8114, the wafer chuck includes a first A second conductive member, such as spring member 8119, applies an electrical charge to wafer 8004. In some examples, the wafer chuck can further include an insulator member 8121 and a spacer element 8118 disposed in the lower portion of the body. The included base section 8002 is between the conductive member 8114. However, it should be understood (in some examples) that the spring member 8119 and the spacer element 8 11 8 may be omitted (eg, as shown in Figure 7). In the case where the spring member 8119 is omitted, an electrode or the like may be included as the second conductive member to apply a charge to the wafer 8004. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X29). 7 mm) — -22- (Please read the notes on the back and fill out this page) • Installed and subscribed to the Intellectual Property Office of the Ministry of Economic Affairs, employee consumption cooperatives, printing 1275452 A7 ___B7 V. Invention description (^ In this example, the spring Member 8119 is disposed between wafer 8004 and spacer element 8118. When pressure is applied to hold conductive member 8114 and base segment 8002 together, spring member 8119 mates to maintain electrical contact to wafer 8004 (see Figure 8B). Further, spacer element 8 11 8 conforms to conductive member 8114 and wafer 8004 to form a seal that prevents spring member 8119 from contacting the electrolyte liquid and provides electrical insulation to spring member 8 11 9 and spacer element 8 11 8 (if needed). The shape of the semiconductor wafer is typically substantially circular. Thus, the components of the wafer chuck are described as having a generally circular shape. However, it should be understood that the components of the wafer chuck can be varied in shape depending on the particular application and/or wafer shape. For example, the semiconductor wafer can have a truncated shape to facilitate assembly of the components of the wafer chuck. Another exemplary architecture for a wafer chuck assembly for holding and applying charge to a wafer suitable for the apparatus and method described above can be found in U.S. Patent No. 6,248,222 r METHODS AND APPARATUS FOR HOLDING AND POSITIONING SEMICONDUCTOR WORKPIECES DURING ELECTROPOLISHING AND/OR ELECTROPLATING OF THE WORKPIECES is published on July 19, 2001 and is hereby incorporated by reference for its completeness. Figure 9A shows another exemplary electropolishing apparatus for reducing the polishing rate near its edge of the wafer. Specifically, wafer chuck 9002 includes a conductive member 9114 that reduces the amount of over-polishing at or near the edge of wafer 9004, as described above. 9A is similar to FIG. 8A except that the conductive member 9114 includes an insulating ring 915 and a conductive ring formed in the insulating ring 915. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm). (Please read the note on the back and then fill out this page) -23- Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1275452 A7 B7 V. Invention Description (23⁄4 9 11 6. Insulation ring 9 11 5 may contain non-corrosive insulation Materials such as plastic, ceramic, etc. The conductive ring 9116 may comprise a metal or alloy such as platinum, rhodium, titanium, stainless steel, etc. The conductive ring 9116 may be connected to the power supply 9110 via a variable resistor 9112 or the like. A spacer element 9118 (eg, a domed ring or the like) can be placed between the conductive member 9114 and the wafer 9004 to prevent the electrolyte liquid from contacting the wafer 9004 that is connected to the power supply 9110 through one or more electrodes. In addition, a spring member or the like (not shown) may also be included to more evenly distribute charge to the wafer 9004. The exemplary device of FIG. 9A allows a smaller amount of conductive material to be mated with the conductive member 9114. This allows the device to be cheaper, lighter, and consume less power during operation. Furthermore, the smaller surface area of the conductive member 9114 allows the wafer 8004 to be compared to the conductive member 8114 (Figs. 8A, 8B). The control of the current density in the edge region is controlled to a greater extent. Furthermore, the architecture of Figure 9A (and Figure 7) can be advantageously used in conjunction with those shown in Figures 7 and 8A through 8C. Figure 9B shows another embodiment of an electrolytic polishing device. An enlarged view of an example. This example is similar to FIG. 9A except that the conductive member 9114 includes an insulating member 9121 formed on the lower portion of the conductive member 9114 (ie, the opposite side of the wafer 9004). Further, the wafer assembly The architecture is such that the metal layer 9005 on the wafer 9004 is charged near the edge through a conductive spacer element 9118. Thus, as shown in Figure 9B, when the electrolyte liquid 9080 is directed close to the wafer 9004 At the edge, one portion of the current flows to the metal layer 9005 and the second portion 12 of the current flows to the conductive member 9114. The conductive member is formed on the conductive member (please read the back of the back sheet and fill in the page) Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -24 - 1275452 A7 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed V. Invention Description (Insulation member 9121 on the lower part of 23⁄4 9114 acts to reduce current 12 and increasing the flow to the metal layer 9 0 0 5. The relative thickness of the insulating member 91 21 and the conductive member 9114 can thus be adjusted to thereby adjust the current L· and h. IV. Electropolishing a segment on a wafer Method of Metal Layer One metal layer formed on a wafer may be segmented during an electropolishing process. For example, it may become one or more discontinuous metal regions on the surface of the wafer. When this happens, fragments of certain metal layers may be isolated from the edge of the wafer where the electrodes are located. In such cases, conventional electropolishing methods do not effectively polish these segmented regions because the electrodes cannot supply power to the segmented metal layers. In an exemplary method, by rotating a wafer having a conductive member disposed around a segmented portion of a metal layer thereof at a sufficient rotational speed, a thin layer of the electrolyte liquid can be formed on the segmented portion and contacted with Conductive member. The thin layer of electrolyte liquid and the conductive ring allow the segmented portion to be electropolished. As shown in Figures 11A and 11B, the metal layer 111 50 becomes, for example, segmented during the polishing process. The segments of metal layer 11150 are not connected to or disposed in an edge of an electrode 1 (not shown) that is connected to wafer 1 1004 of power supply 11110. Because the segments of metal layer 11150 are not placed on the edge of wafer 1 1004 or are connected to the edges by metal, current cannot be conducted through the segments to the electrodes on the edge of wafer 1 1004. Therefore, conventional polishing methods, such as immersing the wafer in a polishing liquid, etc., generally do not polish these segments. The segmentation of the metal layer 11150, for example, may include it being thrown in a copper layer - (please read the back note first and then fill out this page)

This paper scale applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) -25- 1275452 A7 B7 V. Invention description ((Please read the back note and then fill out this page) The exposed portion of the barrier layer on the non-trench portion of the semiconductor device. Further, the segmentation of the metal layer 150 can be, for example, the result of uneven polishing or over-polishing in the edge region. Referring to Figure 11B, a use is shown. An exemplary electropolishing apparatus for electropolishing a metal layer 111 50 on a wafer 1 1004. The system includes a chuck 1 1002, an actuator 1 1000, a fixed nozzle 1 1054, and a power supply 11110. When 1 1054 is supplied When an electrolyte liquid 1 1080 flows to the wafer 1 1004, the actuator 1 1000 can rotate the chuck 1 1002 such that its electrolyte liquid 1 1080 flows over the surface of the wafer 1 1004, as described above, and forms an extension over the metal layer. Thin layer 11081 on the segmented portion of 11150. For example, wafer chuck 11002 can be rotated at a rate ranging from about 100 rpm to about 2000 rpm, and preferably about 1500 rpm to a 300 mm diameter wafer. Thin layer 11081 provides a cross The segmented path of metal layer 11150 conducts a current between the electrolyte liquid 1 1080 stream and the conductive member 11114 of chuck 1 1002. This current allows the device to electrolytically polish the metal layer 11150 on wafer 1 1004. Sectional. Ministry of Economics Intellectual Property Office Staff Consumer Cooperative Printing In addition, the exemplary device illustrated in Figure 11B may be part of a larger electropolished assembly such as that shown in Figure 1A. For example, a shield 1006 may be included ( Figure 1) to avoid spattering, uneven polishing, or interruption of the polishing stream of electrolyte liquid 1 〇 38. Further, various exemplary embodiments of the reduced edge polishing conductive member 11114 can be used with the apparatus of Figure 11B. 12 shows another segment that can be used to electrolytically polish the metal layer on wafer 12004. Figure 12 is similar to Figure 11 except that actuators 12180 and 12182 can move nozzle 12054 in the X direction and actuator 12000 in one. The solid paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -26- 1275452 A7 ----- B7_^__ V. Invention description (^ Position rotary chuck 12002. (Please read the back first Precautions Fill out this page. Although Figures 11 B and 12 show a system in which any of the chucks or nozzles move in the X direction, it should be understood that the chucks and nozzles can be moved in a changing direction depending on the particular application. v. Metal Concentration Measurement and Endpoint Detection Control One element of a wafer that is to achieve a more constant and acceptable polishing quality in a large manufacturing environment controls the concentration of metal in the electrolyte liquid supply used to polish the wafer. When the concentration of the metal in the electrolyte liquid supply reaches a certain level, the electrolyte liquid may become very active (even when there is no current supply). This may result, for example, in chemical etching of the wafer or uranium during the post electropolishing process. Therefore, it is preferable to monitor the metal concentration in the electrolyte liquid during a process operation and perform an immediate adjustment as needed. Printed by the Consumer Intellectual Property Office of the Ministry of Economic Affairs. In addition, the end point detection sensor usually uses an optical detector that is measured by the electrolyte liquid. The measurement is thus (at least in part) dependent on the optical properties of the electrolyte liquid. However, the optical properties of the electrolyte liquid may vary with time depending on the concentration of the metal dissolved in the electrolyte liquid and other factors such as contaminant particles in the electrolyte liquid, hydrogen bubble formation, and the like. Thus, when the optical properties of the electrolyte liquid change during a process operation, the measurements from the termination point detector can be adjusted accordingly to increase the accuracy of the termination point measurement. Figure 10A depicts an exemplary system that can be used to measure the supply of electrolyte liquid 10038, such as the concentration of metal in electrolyte liquid reservoir 1070 (Figure 1A), and the like. The demonstration system consists of fiber probe 10102, fiber optics paper scale applicable to China National Standard (CNS) A4 specification (210x297 mm) -27- 1275452 Α7 Β7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (d The inductor 10104, and the reflector 10100. The fiber probe 10102 and the reflector 10100 can be immersed in the electrolyte liquid 10038, and the fiber probe 10102 can be disposed in a manner relative to the reflector 10100 to allow it to be emitted from the fiber probe. The light of the needle 1 〇1 〇2 is reflected back to the fiber probe 1 0 1 02 by the reflector 1 0 1 最大 at the maximum light intensity. For example, the fiber probe 1 〇1 02 can be set perpendicular to the fiber probe 10102 The direction of the surface emits light, as shown in Fig. A. In addition, the distance 反射 between the reflector 10100 and the fiber probe 10102 may affect the measurement of the concentration of the metal in the electrolyte liquid. Therefore, the distance Η can be The selection is such that the intensity of the light received by the optical sensor 10104 reaches a maximum 値 when the metal concentration reaches a minimum concentration in the supply of the electrolyte liquid 10038. It should be understood that other The path between the sensor 10104 and the reflector 10100 can be selected to include a multipath and multiple reflection path depending on its application and the desired path length. The fiber probe 10102 can also be placed outside of the liquid reservoir to A path that traverses a portion of the electrolyte liquid 1038. Additionally, the reflector 10100 can be replaced with an optical sensor that is configured to detect the intensity of light received by the optical sensor 10104. Typically, the color of the electrolyte liquid is based on The type and concentration of the metal ion dissolved in the electrolyte liquid. For example, the copper ion in the phosphoric acid (Η3Ρ〇4) has a blue color. Further, the light intensity through the electrolyte liquid may be attenuated according to the color of the electrolyte liquid. When the concentration of metal ions in the electrolyte liquid increases, the attenuation of the light intensity increases. With respect to the system shown in Fig. 10A, the relationship between the concentration of the metal in the electrolyte liquid and the attenuation of the light intensity can be made. The following table is for (please read the note on the back and fill out this page). ··1Τ This paper size applies to China. Standard (CNS) Α4 size (210Χ297 mm) -28- 1275452 A7 ____87 V. Description of the invention (A specific metal and electrolyte liquid used in the system: Metal concentration (% by weight) Light intensity attenuation 0__ Y1 0.2 Y2 0.4 Y3 0.6 Y4 0.8 Y5 1.0 Y6 (Please read the note on the back and fill out this page) The information printed in the table printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs can be stored in the computer 10105. Using the information in the table, the computer can automatically The intensity of the light in the electrolyte liquid is calculated based on the intensity of the light detected by the optical sensor 10104 by using interpolation, rounding, or other approximation. Although some of the metal concentrations (% by weight) have been included in the above table, any crucible may be used, and any number of crucibles may be used. The color of the light emitted by fiber probe 10102 can be selected to increase the sensitivity of the measurements it detects by optical sensor 10104. Specifically, the color of the light emitted by the fiber probe 10102 may be different from the color of the metal ions in the electrolyte liquid supply to increase the sensitivity of the particular metal ion. For example, for copper ions in the phosphoric acid supply, the emission of red light provides a higher sensitivity to copper than the emission of green light, while the emission of green light provides a higher sensitivity than the emission of blue light. However, for any color of metal ions in the electrolyte liquid, white light can be emitted. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -29- Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1275452 A7 _ B7__ V. Invention Description (Figure 10A also depicts another of the above demonstration systems A form that can be used to remove metal ions from the supply of electrolyte liquid 10038. The system further includes two electrodes 10028 and 10029, and a power supply 10030. When the optical sensor 10104 measures the metal ions in its supply of electrolyte liquid 10038 When the concentration has reached the first predetermined threshold, the computer 10105 can instruct the power supply 10030 to supply a voltage to the electrodes 10028 and 10029 to remove metal ions from the electrolyte liquid supply. When the voltage is supplied to the electrodes 10028 and 10029, the electrolyte liquid The metal ions supplied by 10038 are initially plated on the electrode 10029. When the optical sensor 10104 detects that the metal ion concentration has fallen below the second predetermined threshold, the computer 10105 can instruct the power supply 10030 to stop supplying the voltage to the electrodes 10028 and 10029. Stopping the removal of metal ions from the supply of electrolyte liquid 10038. In this manner, electrolyte liquid 10038 is supplied The metal concentration can be maintained between the first and second predetermined turns, for example, during an electropolishing process. The concentration of metal ions in the electrolyte liquid 10038 can also be used to assist in terminating the point detector 1016 (Fig. 1A, 1B) Endpoint detector 1016 can be used to determine the thickness of the metal layer on wafer 1004. This information can be used by the electropolishing apparatus to determine when to continue or interrupt the electropolishing process on a particular area of wafer 1004. It can also be used to determine the appropriate polishing rate. The termination point detector 101 can include various sensors, such as ultrasonic sensors, optical sensors, electromagnetic sensors, etc. The electrolyte liquid 1038 is used as a medium for transmission. Signaling and performing measurements increases the accuracy of the measurement because the interface between the medium and the electrolyte liquid 1038 (eg, air) need not be considered. However, if it may affect the electrolyte liquid of the sensor (please read the precautions on the back and fill in the form) Page) This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -30- Ministry of Economic Affairs Intellectual Property Office staff Consumer Cooperatives Printed 1275452 A7 B7 V. INSTRUCTIONS (The nature of 1038 changes, the measurement may not be accurate for long periods of time. Therefore, the end point detector measurement can be improved by considering the changing properties of the electrolyte liquid 1038. Figure 10B shows Another exemplary system for supervising the optical properties of an electrolyte liquid can be used, for example, to adjust the end point detector measurement. Figure 10B is similar to Figure 10A except that it includes a second optical sensor 10204 and optical fiber 10202 . Optical sensor 10104, fiber probe 10102, and reflector 10100 operate in the manner described with reference to Figure 10A. The second optical sensor 10204 and optical fiber 10202 also operate similar to optical sensor 10104 and fiber probe 10102, however, optical sensor 10204 and optical fiber 10202 measure other optical characteristics of the electrolyte liquid. For example, during an electropolishing process, hydrogen bubbles are often formed on the electrodes. The bubble may adversely affect the termination point detector due to diffraction and reduced intensity of the measuring beam in the electrolyte liquid. The reduction in intensity may affect the measurement of metal ion concentration, but by using multiple detectors that are sensitive to different characteristics, the metal ion concentration can be accurately determined. In an example of determining the optical properties of the electrolyte liquid affected by the bubbles, the color of the light emitted by the optical fiber 10202 can be selected again to increase its measurement as also detected by the second optical sensor 1〇2〇4. Sensitivity. In this example, the color of the light emitted by fiber probe 10202 can be selected to be the same color of the metal ions in the electrolyte liquid supply to increase sensitivity to bubbles and reduce sensitivity to metal ions. For example, for copper in the phosphoric acid supply, the emission of blue light provides higher sensitivity to the robes and lower sensitivity to copper ions (compared to white light), while the paper size applies to the Chinese National Standard (CNS) A4. Specifications (210X297 mm) (Please read the note on the back and fill out this page) -31 - 1275452 A7 B7 V. INSTRUCTIONS (23⁄4 white light provides higher sensitivity to bubbles and lower sensitivity to copper ions) Degree (compared to red light). 绛-- (Please read the back note first and then fill out this page) In addition, the intensity of red light from fiber probe 10102 will also be reduced due to any bubbles in the electrolyte liquid, The measurement of its copper ion concentration will be inaccurate. However, the second optical sensor 10204 will indicate the portion of its strength that is mainly due to the bubble rather than the copper ion concentration, since the sensitivity of the fiber probe 10202 is selected as Insensitive to copper ion concentration. The reduction in intensity of red light can thus be determined by considering the portion of the bubble that is determined by the second optical sensor 10204. Point detector 1010 (Fig. 1A) will be able to extract the optical properties of the electrolyte liquid from computer 10105 and perform an accurate measurement of the thickness of the metal on wafer 1004 (Fig. 1 A). Thus, second optical sensor 10204 can increase the termination point Detector measurement and accuracy of metal ion concentration measurement. It should be understood that any number of inductors can be used to measure various properties of the electrolyte liquid. Various properties (eg, optical properties, etc.) can then be stored and used to adjust or Deciding to terminate the point detector measurement, etc. Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative VI. Nozzle Architecture According to another type, an exemplary method and apparatus for electrolytically polishing a metal film on a wafer includes different uses. Multi-size nozzles with a polishing rate. Typically, large nozzles allow for a larger polishing rate of a metal film (eg, copper) formed on a wafer, while small nozzles produce a smaller polishing rate. Large nozzles can thus be used Rough polishing of the metal layer, followed by more precise control of the electropolishing process by using a small nozzle. Multi-nozzle paper The scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -32 - 1275452 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed B7 V. Invention Description (2) thus facilitates more precise polishing of a wafer However, because of the limited space in a clean room, for example, the device with multiple nozzles is preferably small. An exemplary device with a plurality of nozzles (which is mounted on a rotating nozzle holder) thus allows for multiple uses. The nozzles are in a narrow space. Figures 13A, 13B, 13C, 13D and 13E show an exemplary electropolishing assembly comprising a multi-rotating nozzle assembly. Figure 1 3A to 1 3E are similar to Figures 1A to 1E except that the addition has multiple A nozzle rotary nozzle 1012 is placed adjacent to the optical end point detector 1016 and the eddy current thickness/termination point detector 1009. As indicated by the arrows in Fig. 1A, the rotary nozzle 2012 can rotate and provide nozzles 1014 of different sizes and/or shapes to direct an electrolyte liquid 1038 to the wafer 1004. Thus, pump 1018 directs only electrolyte liquid 1038 to nozzle 1010 and single nozzle 1014 of end point detector 1016, while in Figure 1A, electrolyte liquid 1038 is directed to each of the individual nozzles used therein. The termination point detector 1009 is operable to measure the thickness of a metal film formed on the wafer 1004. Detector 1009 measures the thickness of the metal film before, during, and after an electropolishing process. In one exemplary method, a termination point detector 1009 is used to determine the thickness of the metal film over the entire wafer 1004 prior to electropolishing using, for example, a eddy current termination point detector. The metal film thickness can then be used to control the local polishing rate at various locations on the wafer 1004 by controlling the current density and/or the stream profile. The distance between the termination point detector 1009 and the wafer 1004 is, for example, in the range of from about 5 to about 1000 microns. The film thickness on the entire wafer can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) on this paper scale (please read the note on the back and fill out this page) -33- !275452 A7 ______B7 V. Invention Description (Determining by rotating the wafer 1004 and moving the chuck 1002 in the horizontal direction, while allowing the termination point detector 1009 to scan the entire surface of the wafer 1004. However, it should be understood that the termination point detector 1 is on the other hand. 009 can also scan a fixed wafer 1004. The rotating nozzle 2012 can then be rotated to select an ideal nozzle 1014 based on the portion of the wafer 1004 being polished, the thickness of the metal film, etc., for example, thicker in the metal layer. Large nozzles can be used in the area, and small nozzles can be used in thin areas of the metal layer. Several nozzles of various sizes and contours (which can be exchanged quickly and easily) in a simple small electropolishing assembly The polishing accuracy is thus improved. Referring to Figure 14A, a cross-sectional view of an exemplary multiple rotary nozzle holder 2012 is shown. The rotary nozzle holder 2012 holds the nozzle 2014. The structure 2070 rotates the rotary nozzle holder 2012 to position the new nozzle to guide the flow of the electrolyte liquid. The 〇-type ring 2066 (for example) seals the drive contact 2068. The drive mechanism 2070 can be a stepper motor The servo motor, pneumatic (compressed gas or liquid) drives the rotating mechanism, etc. The nozzle 2014 in the rotating nozzle holder 2012 includes an electrode 2056 that can be electrically coupled to the outside of the power supply 1040 (Fig. 13A), through the current Feeding path 2062. The rotating nozzle holder 2012 is placed on the plate 2084, which is sealed with the container 1008 by a 〇-ring 2072 and a bolt 2074.

The nozzle holder 2012 can be made of plastic (such as PVC, PVD, TEFLON, polypropylene, etc.) or coated with a material that is generally insulating and non-corrosive. The nozzle 2014 may be made of molybdenum, titanium, platinum, stainless steel, or the like. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back and fill out this page) • Installed and subscribed to the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing -34- 1275452 A7 ___B7__ V. INSTRUCTION DESCRIPTION (3) Figure 14C shows an exemplary process for electropolishing a metal film from a wafer 1〇〇4 using the apparatus of Figure 14A. In block 1, the metal film thickness profile is determined by, for example, terminating the point detector 1009 (which moves in the X direction as the wafer 1004 rotates as described above). In block 2, the metal film can be initially polished to a high polishing rate using a large nozzle 2014. After a high polishing rate, the rotary nozzle holder 2012 can be rotated to perform a lower polishing rate using the small nozzles 2014, in block 3. After initial polishing in block 1 and or block 2, the remaining metal thickness profile can be determined using termination point detector 1009 (eg, eddy current termination point detector, optical termination point detector, etc.) In block 4. Depending on the remaining metal thickness profile determined in block 4, the polishing current can be adjusted or tuned in block 5 to polish the location of the thick film using a higher rate, the position of the film using the low rate polishing, and stop polishing to zero. The location of the film thickness. The polishing current can be tuned by, for example, using different nozzles 2014 and/or changing the charge supplied by the power supply. In block 6, the measurement of the thickness profile (i.e., block 4) is repeated. If the thickness of the metal layer reaches the preset threshold, the polishing process can be stopped. However, if the thickness of the metal does not reach the preset threshold, the block 5 can be repeated until the desired thickness is obtained. It should be understood that various modifications and changes can be made to the process described with reference to Figure 14c. In addition, various other processes can be used in conjunction with the exemplary apparatus of Figure 14A. Referring to Figure 14B, another differential multi-rotating nozzle assembly is shown. The rotary nozzle assembly shown in Fig. 14B is similar to that shown in Fig. 14A except that the drive contact 2068 is replaced by magnetic coupling contacts 207 8 and 2082. This paper size applies to the Chinese National Standard (CNS) A4 specification. (210X 297 mm) ' ~ -35- (Please read the note on the back and fill out this page) - Install _, 11 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed Economy Ministry Intellectual Property Bureau Staff Consumer Cooperative Printed 1275452 A7 __ B7_ V. Description of the Invention (The use of magnetic coupling contacts 2078 and 2082 has the advantage that its drive contact 2078 has no direct connection to the rotary nozzle holder 2012, and the 〇-shaped ring 2066 of Figure 14A can be omitted This reduces the chance of leakage of the electrolyte liquid 103 8 to the drive contact 2068. It will thus be appreciated that various methods of coupling the drive contact 2068 to the rotary nozzle holder 2012 can be used. Referring to Figure 15, an exemplary linear movable multiple is shown. The nozzle assembly. The operation of the multiple linear movable nozzle assembly is similar to the rotary nozzle 2012 of Figures 13 to 13E except that the nozzles are moved in a linear manner rather than in a rotating manner. The heavy linear movable nozzle assembly includes a nozzle 3054, a nozzle 3222, and a nozzle 3226 that individually include electrodes 3056, 3220, and 3224. The three nozzles 3054, 3022, and 3226 can be configured to have different profiles (eg, different Diameter), and thus different polishing rates are provided. Nozzles 3054, 3022, and 3226 can be moved in a horizontal direction (ie, X direction) through nozzle holder 3180 and movement guide 3182. Electrodes 3056, 3220, and 3224 are The power supply 3110 is further connected through an electric feed path (not shown). The electrolyte liquid 3080 is supplied to the nozzles 3054, 3022, and 3226 through the nozzle holder 3180. As described with reference to FIG. 14C, nozzles 3054 of different sizes, 3022, and 3226 may be alternately used during an electropolishing process to remove a metal film disposed over the wafer 1〇〇4. Typically, a large nozzle may be used to polish the metal film using a higher polishing rate ( When the metal film is thick, a small nozzle is used to polish the metal film with a lower polishing rate (when the metal film is thin or when it is desired to remove a small amount of metal). Fig. 16A to 1 6E shows an example of a multi-rotating nozzle assembly (please read the notes on the back and then fill out this page).

, 1T The paper size is applicable to China National Standard (CNS) Α4 specification (210Χ297 mm) - 36- 1275452 A7 __ B7 V. Invention description ((Please read the back note first and then fill in this page) Electropolishing assembly. 16A to 16E are similar to FIGS. 13A to 13E except that they incorporate a linear movable base 4180 and a moving guide 4182 mounted with rotary nozzles 4012 and 4014. Specifically, the rotary multiple nozzle 4014, the optical termination point detector 4016, and A vortex thickness/termination point detector 4060 is mounted over the linear moveable base 4180. The linear moveable base member can be moved in a horizontal direction (ie, the X direction) along the movement guide 4182. This assembly allows The multiple nozzles are contained in a small space. The structure and operation of the multiple nozzles 4014 are similar to those shown in Figures 14A and 14B, however, such as rotary drive mechanisms, drive contacts, current feed channels, etc. have been omitted for illustrative purposes. And electrolyte feeding channel. VII. Nozzle self-cleaning procedure Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing according to another type, describing a kind of self-cleaning An exemplary procedure for polishing a nozzle. During a typical electropolishing procedure, the metal dissolved in the electrolyte liquid may be plated over the nozzle electrode. The plated metal may limit or deform the nozzle opening, thereby changing the electrolyte liquid flow. Shape and/or orientation. Changing the shape of the stream may change the current density of the stream, thereby changing the polishing rate of the electropolishing device. The nozzle may be electroplated or cleaned by applying a reverse voltage to the nozzle. It causes the metal ions to dissolve back into the electrolyte solution. For example, the metal may be plated to another nozzle, sacrificial material, etc. Referring to Figures 1A to 1E, from a metal layer (which is polished from wafer 1〇〇4) The metal is dissolved in the electrolyte liquid 1038 and may cause the dissolved gold paper size to be applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -37- 1275452 A7 B7 V. Description of the invention (4 parts of the genus become the mine On nozzle electrodes 1056 and/or 1060. To remove metal from electrodes 1056 and/or 1060, a reverse voltage can be applied to nozzle electrodes 1056 and/or 106. 0. Any DC or AC power supply can be used to apply a reverse voltage. In an exemplary procedure, a reverse voltage is applied to deposit the ore metal onto a *disposable wafer. In yet another example, The reverse voltage is applied to deposit the plated metal on a block. A. Using a DC power supply to dissolve the metal in the electrolyte liquid. Referring to Figure 1A, the metal buildup on the nozzle 1012 can be polished and dissolved using a DC power supply. In the electrolyte liquid 1038. More specifically, the lead C can be connected to the lead b, and the lead B can be connected to the lead a such that its nozzle electrode 1056 (Figs. 1B-1E) acts as an anode and the electrode 1060 acts as a cathode. Electrolyte liquid 1038 can be supplied through nozzles 1012 and 1014 to form a circuit between electrodes 1056 and 1060 that allows metal to build up on nozzle 1012 to be removed from nozzle 1012 and dissolved in electrolyte liquid 1038. A portion of the metal dissolved in the electrolyte liquid 1038 can be plated onto the nozzle 1014. Although it appears that the process moves the metal from only one nozzle and plates it on the other nozzle, most of the metal removed from the nozzle 1 〇 12 remains dissolved in the electrolyte liquid 1038. Therefore, the concentration of the metal in the electrolytic liquid 1038 of the electropolishing process is usually very low, for example, less than 3% by weight, so that its electrolytic polishing is performed by supplying the nozzle electrodes 101 2 and 1014 instead of the chemical action of the electrolyte liquid 1038. Drive. Therefore, the amount of metal polished from the nozzle 1 〇 12 is greater than the amount of metal that is plated on the nozzle 1014. For example, the paper size applies to the Chinese National Standard (CNS) A4 specification (21〇><297 mm) (please read the note on the back and fill out this page) - Install - Book the Intellectual Property Office of the Ministry of Economic Affairs -38 - 1275452 A7 _ B7 V. Description of the invention (4 (please read the note on the back and then fill out this page). Corresponding to each metal ion plated on the nozzle 1014, there may be 10 metal ions removed from the nozzle. 1012, which causes most of the metal ions to dissolve in the electrolyte liquid 1038. With continued reference to Figure 1A, the process can be reversed such that the metal buildup on its nozzle 1014 is polished off and dissolved in the electrolyte liquid using a DC power supply. More specifically, lead B can be connected to lead b and lead C can be connected to lead a such that its nozzle electrode 1060 (Figs. 1B-1E) acts as an anode and nozzle electrode 1056 acts as a cathode. Electrolyte liquid 1038 can It is supplied through nozzles 1012 and 1014 to form a circuit that allows metal to be deposited on nozzle 1014 to be removed from nozzle 1014 and dissolved in electrolyte liquid 1038. Dissolved in electrolyte solution A portion of the metal in 1038 may be plated on the nozzle 101 2. The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative prints by repeating the process, that is, reversing the voltage of each nozzle used in the device. The nozzle can be cleaned. In an exemplary process, the nozzle is quickly cleaned by electropolishing the succeeding wafer by first removing the plating nozzle 1012 and plating the nozzle 1014, followed by the plating nozzle 1014 and plating the nozzle 1012. The two nozzles are effectively cleaned because (as discussed above) most of the metal is dissolved in the electrolyte liquid 1038 rather than being plated in the opposite nozzle. Figures 2 and 3 are shown in a cleaning procedure. Two exemplary configurations of nozzles 1012 and 1014. Nozzles 1012 and 1014 are placed in proximity to each other and electrolyte liquid is allowed to flow through nozzles 101 2 and 1014 and form a film or path of electrolyte liquid therebetween. When nozzles 1012 and 1014 are placed When closer together (as shown in Figure 3), the electrolyte flowing between nozzles 1012 and 1014 is of the Chinese National Standard (CNS) A4 specification (210X297 mm) -39-1275 452 A7 ____B7_ V. INSTRUCTIONS ((Please read the back note first and then fill out this page) The two films or paths of liquid 1080 can be combined to form a single path. This single path reduces the length of the circuit and thus increases the metal buildup removal The efficiency of the procedure. Of course, it should be understood that the exemplary method can also be used with more than two nozzles. B. Using a DC power supply to deposit metal on the wafer. Referring to Figure 1A, the metal buildup on the nozzle 1012 can be supplied using a DC power supply. It is polished off and plated onto wafer 1004 in accordance with another exemplary process. More specifically, lead A can be connected to lead b and lead B can be connected to lead a such that wafer 1004 acts as a cathode and nozzle electrode .1056 (Figs. 1B-1E) acts as an anode. Electrolyte liquid 1038 can be supplied to wafer 1004 through nozzle 1012 to form a circuit that allows metal to build up on nozzle 1012 to be plated onto wafer 1004. Wafer 1004 can be discarded after metal buildup on nozzle 1012 is removed. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative. Similarly, referring to Figure 1A, metal buildup on nozzle 1014 can be polished off and plated onto wafer 1004 using a DC power supply. More specifically, lead A can be connected to lead b and lead C can be connected to lead a such that its wafer 1004 acts as a cathode and nozzle electrode 1060 (Figs. 1B-1E) acts as an anode. Electrolyte liquid 1038 can be supplied to wafer 1004 through nozzle 1014 to form a circuit that allows metal to build up on nozzle 1014 to be plated onto wafer 1004. The nozzles 1012 or other nozzles in the electropolishing apparatus can be cleaned in parallel or in tandem with the nozzles 1014. Wafer 1004 can be discarded after the metal buildup on nozzle 1012 is removed. C. Use DC power supply to deposit electroplated metal on a block. This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) -40- 1275452 A7 __ B7 V. Invention description (Please read the back NOTE, refilling this page. Referring to Figure 4, the metal stack 1057 on the nozzle 1012 can be polished off and plated onto the block 1082 using a DC power supply, according to another exemplary process. More specifically, the lead B can be Connected to lead a and lead D can be connected to lead b such that block 1082 acts as a cathode and nozzle electrode 1056 acts as an anode. Electrolyte liquid 1038 (Fig. 1) can be supplied through nozzle 1012 and allows its contact area Block 1082 forms a circuit through electrolyte liquid 1038 that allows metal to build up on nozzle 1012 to be plated onto block 1082. Block 1082 can be discarded after metal buildup on nozzle 1012 is removed, or otherwise At the time of convenience. Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printed Similarly, referring to Figure 4, the metal stack 1057 on the nozzle 1014 can be polished and plated using a DC power supply. More specifically, lead C can be connected to lead a and lead D can be connected to lead b such that block 1082 acts as a cathode and nozzle electrode 1060 acts as an anode. Electrolyte liquid 1038 (Fig. 1) is permeable Nozzle 1014 is supplied and allowed to contact block 1082 to form a circuit that allows metal to build up on nozzle 1014 to be plated onto block 1082. Block 1082 can be removed after metal buildup on nozzle 1014 is removed. Abandon, or at other convenient times. In addition, the electrodes 1056 and 1060 can be cleaned in series or in parallel. D. Use an AC power supply to remove metal deposits in another demonstration nozzle cleaning procedure, can be used with any The above architecture uses an AC power supply (rather than a DC power supply) to remove metal buildup from nozzles 1012 and 1014. Specifically, an AC power supply is used to dissolve the metal buildup in the electrolyte liquid, and the plating metal buildup will be discarded. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -41 - 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints V. Explain (33⁄4 on the wafer, or plating metal on a block or other sacrificial material. It is more efficient to remove metal deposits from the nozzle with an AC power supply because the metal concentration in the electrolyte liquid is reduced. Therefore, The metal concentration is generally in the range of from about 0.1% to about 5% by weight, and preferably less than 0.5% by weight, during the removal procedure. VIII. Nozzle Shape In any of the exemplary embodiments described, various Shaped nozzles. Different types of nozzles (e.g., different sizes, profiles, cross-sectional shapes, etc.) provide different polishing characteristics and can be advantageously used depending on the particular application. For example, as shown in FIG. 1B, an exemplary electropolishing apparatus can include two differently sized nozzles 1012 and 1014 that can be used to electrolyze different sections of wafer 1004. In addition, Figures 5A through 5H show various exemplary nozzles having a variety of shapes and configurations. The shape of the nozzle (e.g., the passage and the end) can change the electrolyte liquid flowing from the nozzle, the current density in the flow of the electrolyte liquid, and the like. Figures A through E show various nozzle configurations and shapes including an insulator 5054 and an electrode 5056. Figures 5F through 5H show nozzles without an insulator. Several nozzle frames have curved electrodes 5056 near their openings. The curved electrode avoids the electrical peak of the sharp point of the electrode, which helps to produce a more uniform current density in the electrolyte liquid stream. Figure 5H depicts a nozzle comprising an electrode 5056 and a rod 5058 disposed adjacent the center of the nozzle to increase the surface area of the electrode and produce a more uniform current density. For each of the above nozzles, the electrode 5056 may comprise a metal or an alloy, (please read the notes on the back and fill out this page) - Loading. The standard paper size applies to the Chinese National Standard (CNS) A4 specification (210x297 mm) - 42- 1275452 A7 B7 V. Description of the invention (d such as molybdenum, titanium, stainless steel, etc. Further, the insulator 5054 may comprise plastic such as PVC, PVD, Teflon, etc., or a pottery such as Al2〇3, Zr〇 2, Si〇2, etc. Therefore, since metals and alloys are generally formed into various shapes more than plastics and ceramics, nozzles having curved or tapered electrodes and straight-shaped insulators can be cheaper than other shapes. Further, a nozzle having only one electrode 5056, such as those shown in Figures 5F, 5G, and 5H, can have a simpler design and a larger surface area. Further, the nozzle shown in Figure 5H includes a rod. 5058 is part of electrode 5056 that provides an electrode having a larger surface area and can more evenly distribute its potential across electrolyte liquid 1038 (FIG. 1A) flowing from the nozzle. A more evenly distributed potential results in wafer 1004 More uniform electropolishing. Figures 6A and 6B have another exemplary nozzle of insulator 6054, electrode 6056, and electrically conductive inner structure 6086. Inner structure 6086 comprises a metal or alloy, such as giant, titanium, stainless steel, and the like. The inner structure 6086 includes a plurality of channels that increase the surface area of the electrode and more evenly distributes its potential across the nozzle 6056. The size of the channel can range from about 0.1 mm to about 10 mm, depending on the diameter of the nozzle and the particular application. Preferably, each channel is sized to about one tenth of the diameter of the nozzle. The channels can be formed in a variety of cross-sectional shapes, such as those shown in Figures 6B through 61. For example, the channels can be square, fiber Shape, straight groove, metal rod, wave groove, rectangle, honeycomb, etc. In addition, although Figures B to I show a specific cross-sectional shape, they can also form channels of any cross-sectional shape, such as triangles, polygons. , ellipses, etc. The above description is intended to explain exemplary embodiments and not to limit them. Those paper sizes apply to the Chinese National Standard (CNS) Α4 specification (210X 297 mm) ( Matters to read the back of the note and then fill in this page) installed ·

1T Ministry of Economic Affairs Intellectual Property Office Employees Consumption Cooperative Printed -43- 1275452 A7 __B7_ V. Description of the Invention (Familiar with the art will understand that various modifications and changes within the scope of the invention are possible. For example, different demonstrations Electropolishing devices (such as shields, conductive members, various nozzles, termination point detectors, etc.) can be used together in a single assembly or can be used separately to enhance conventional electropolishing devices. Accordingly, the present invention is The invention is defined by the scope of the appended claims and should not be limited by the description herein. BRIEF DESCRIPTION OF THE DRAWINGS Figures 1A and 1B are a cross-sectional view and a top view, respectively, of an exemplary semiconductor processing apparatus including a shield; Figures 1C, 1D 1A is a cross-sectional view of an exemplary nozzle of a semiconductor processing apparatus; FIG. 2 is a cross-sectional view of an exemplary nozzle of a semiconductor processing apparatus; and FIG. 3 is a cross-sectional view of an exemplary nozzle of a semiconductor processing apparatus; A cross-sectional view of an exemplary nozzle and a block of a semiconductor processing apparatus; Figures 5A through 5H show cross-sectional views of various exemplary nozzle shapes and structures, Figs. 6A and 6B A cross-sectional view and a top view of an exemplary nozzle structure; Figures 6C through 61 show top views of various exemplary nozzle configurations; Figure 7 shows a cross-sectional view of an exemplary semiconductor processing apparatus including conductive members; Figures 8A and 8B show an Cross-sectional view of an exemplary semiconductor processing device for conductive members; This paper scale applies to China National Standard (CNS) Α4 specifications (210 >< 297 mm) (please read the notes on the back and fill in the animal equipment)

1T Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed -44- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (4; Figure 8C shows a demonstration wafer chuck containing conductive members 9A and 9B are cross-sectional views showing an exemplary semiconductor processing apparatus including a conductive member; FIGS. 10A and 10B each showing a cross-sectional view of an exemplary semiconductor processing apparatus including one or two optical sensors; 11A and 11B show top and cross-sectional views of an exemplary semiconductor processing apparatus; Fig. 12 shows a cross-sectional view of an exemplary semiconductor processing apparatus; and Figs. 13A-13E show an exemplary electrolytic polishing assembly having a plurality of rotating assemblies. 14A and 14B show cross-sectional views of an exemplary plurality of rotating nozzle assemblies; FIG. 14C shows an exemplary process for electrolytically polishing a conductive layer on a wafer; FIG. 15 shows an exemplary plurality of linearities. A cross-sectional view of the electropolishing chamber of the moving nozzle assembly; and Figures 16A-16E show an exemplary diagram of an electropolishing apparatus having a linearly movable and rotatable nozzle. Piece table 1000 actuator 1002 chuck 1004 wafer (please read the back note first and then fill in this page) This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -45- Ministry of Economics intellectual property Bureau employee consumption cooperative printing 1275452 A7 B7 V. Invention description (flat 1006 shielding 1008 polishing container 10 0 9 detector 1010, 1012, 1014 nozzle 101 6 termination point detector 10 1 8 filter 1020 pump 1024 check valve 1 028 Electrode 1030 power supply 1 032 temperature sensor 1034 cooler / heater 1036 heat exchanger 1038 electrolyte liquid 1040 power supply 1052 nozzle 1056, 1060 electrode 1070 reservoir 2012 rotating nozzle holder 2014 nozzle 2056 electrode 2062 current feed channel 2066 type Ring 2068 drive contacts (please read the note on the back and then fill out this page) This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -46- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1275452 A7 B7 V. Invention description (4i 2070 drive mechanism 2072 〇 ring 2074 bolt 2078, 2082 magnetic coupling contact 2084 plate 3054 nozzle 3056, 32 20, 3224 Electrode 3 110 Power supply 3180 Nozzle holder 3182 Moving guide 3222 Nozzle 3226 Nozzle 4012, 4014 Rotary nozzle 4016 Optical end point detector 4060 Detector 4180 Base 4182 Moving guide 5 0 5 4 Insulator 505 6 Electrode 505 8 rod 6054 insulator 605 6 electrode 6086 structure 7002 chuck (please read the back of the note before filling this page) - loading ·

, 1T This paper scale applies to China National Standard (CNS) Α 4 specifications (210Χ297 mm) -47- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1275452 A7 B7 V. Invention description (4i 7004 wafer 7054 nozzle 7080 electrolyte liquid flow 708 1 thin layer 7110 power supply 7114 conductive member 8002 chuck 8004 wafer 8 110 power supply 8 11 2 power supply 8114 conductive member 8118 spacer element 8119 spring member 8121 insulator member 9002 wafer chuck 9004 wafer 9005 metal layer 9080 Electrolyte Liquid 9110 Power Supply 9 11 2 Variable Resistor 9 114 Conductive Member 9 11 5 Insulation Ring 9116 Conductive Ring 9118 Spacer Element (Please read the back note first and then fill in this page) This paper scale applies to Chinese National Standard (CNS) A4 size (210X297 mm) -48- 1275452 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (flat 9 1 2 1 insulation member 10028, 10029 electrode 10030 power supply 10100 reflector 10102 fiber probe 10104 fiber optic sensor 10105 computer 10202 optical fiber 10204 second optical sensor 1 1000 actuator 1 1002 chuck 110 04 Wafer 1 1054 Nozzle 1 1080 Electrolyte Liquid 11081 Thin Layer 11110 Power Supply 11114 Conductive Member 11150 Metal Layer 12000 Actuator 12002 Chuck 12054 Nozzle 1 21 80, 1 21 82 Actuator (please read the notes on the back first) Fill in this page) This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -49-

Claims (1)

1275452 A8 B8 C8 D8 VI. Patent Application Scope 1. A device for electrolytically polishing a wafer, comprising: a wafer chuck for holding a wafer; (Please read the notes on the back and fill out this page. An actuator for rotating the wafer chuck; a nozzle for electrolytically polishing the wafer; and a shield placed around the edge of the wafer. 2. The device of claim 1, wherein the actuator rotates the wafer chuck at a sufficient rotational speed such that an electrolyte liquid flow incident on the wafer flows toward the edge of the wafer. 3. The device of claim 2, wherein the electrolyte liquid flows across the edge of the wafer and is incident on the shield. 4. The device of claim 2, wherein the wafer is oriented face down and the flow of electrolyte liquid incident on the wafer flows before exiting from the surface of the wafer to the edge of the wafer. 5. The device of claim 1, wherein the actuator changes the rotation of the chuck according to the portion of the wafer that is being electropolished. 6. The device of claim 5, wherein the actuator rotates the chuck at a higher speed while polishing a portion of the wafer near the center. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperative. 7. For the device of the first application of the patent scope, the wafer chuck is transferred to the nozzle. 8. The device of claim 7, wherein the shield moves as it contacts the wafer chuck of the nozzle. 9. The device of claim 7, wherein the shield and the wafer chuck are mechanically coupled to move in relation to the nozzle. 10. For the device of the scope of patent application No. 1, the nozzle is related to the -50- paper scale applicable to the Chinese national standard (CNS &gt; A4 specification (210X297 mm) A8 B8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative Printed 1275452 π, patented range 2 wafer chuck and moved. 11 · The device of claim 1 wherein the shield is placed about 1 mm to about 10 mm from the edge of the chuck. 1 2 · The device of claim 1, wherein the shield is placed about 5 mm from the edge of the chuck. 13. The device of claim 1, wherein the side wall of the shield comprises an L-shaped cross section. The device of claim 1, wherein the side wall of the shield is tapered. 1 5 . The device of claim 1, wherein the side wall of the shield extends above or below the chuck. The device of claim 1 wherein the shield comprises a plastic or ceramic material. 17. The device of claim 1 wherein the shield comprises a corrosion-resistant metal or alloy. 18. The apparatus of claim 1 is The middle shield is coated with an electrolyte liquid resistant material. 19. A method for electrolytically polishing a semiconductor wafer, comprising the steps of: electropolishing a wafer by an electrolyte liquid stream; rotating the wafer such that it is incident on the wafer The electrolyte liquid flows across the surface of the wafer toward the edge of the wafer; and a shield is placed close to the edge of the wafer. 20 · The method of claim 19, wherein the wafer is rotated to the paper scale for China National Standard (CNS) A4 Specification (210X297 mm 1 &quot; -------- -51 - Please read the idiot Mii I want to fill in this book) 1275452 A8 B8 C8 D8 Printed by the Intellectual Property Office of the Ministry of Economic Affairs. Employees' Cooperatives Printed VI. Applying for a patented circumstance 3 Sufficient rotation speed so that the electrolyte liquid incident on the wafer flows to the edge of the wafer without leaving the surface of the wafer. 21. The method of claim 19, wherein the electrolyte liquid flows across the edge of the wafer and is incident on the shield. 22. The method of claim 19, further comprising changing the rotation of the chuck according to the portion of the wafer that is being electropolished. 23. The method of claim 22, wherein the wafer is rotated at a higher velocity when the electropolished portion of the wafer is near the center. 24. The method of claim 19, further comprising attaching to the nozzle to transfer the wafer. 25. The method of claim 19, further comprising attaching to the nozzle to move the shield. 26. The method of claim 19, further comprising moving the shield and the wafer together in relation to the nozzle. 27. The method of claim 19, further comprising attaching to the wafer to move the nozzle. 28. A device for holding a wafer, comprising: a body for supporting a wafer and exposing one side of the crystal to an electrolyte liquid stream; and a first conductive member for supplying power to the wafer And a second electrically conductive member for being exposed to the flow of the electrolyte liquid. 29. The device of claim 28, wherein the first electrically conductive member is further adapted to be isolated from the flow of electrolyte liquid. 30. If the device of claim 28 is applied, one of the charges is supplied (please read the note on the back and then fill in the page). Install · Wire g - - :1 · This paper size applies to Chinese National Standard (CNS) A4 Specifications (210X 297 mm) -52- 1275452 A8 B8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed six, apply for patent range 4 to the second conductive member. 3. The device of claim 28, wherein the charge supplied to the second conductive member is not equal to the charge supplied to the wafer. 32. The device of claim 28, wherein the second electrically conductive member is a ring. 33. The device of claim 28, wherein the second electrically conductive member is placed proximate to the wafer. 34. The device of claim 28, wherein the second electrically conductive member comprises a metal. 35. The device of claim 28, wherein the second electrically conductive member contacts the wafer. 36. The device of claim 28, wherein an insulating member is disposed between the wafer and the second conductive member. 37. The device of claim 36, wherein the insulating member is formed by a seal between the conductive member and the wafer. 38. The device of claim 36, wherein the insulating member comprises a ring. 39. The device of claim 36, wherein the insulating member comprises synthetic rubber. 40. The device of claim 28, wherein the first electrically conductive member comprises a spring member. 41. The device of claim 40, wherein the spring member contacts the periphery of the wafer. 4 2. For the device of claim 40, where the spring member is included (please read the notes on the back and fill out this page) This paper scale applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -53- A8 B8 C8 D8 1275452 VI. Patent application scope 5 A spring. 43. The device of claim 40, wherein the spring member comprises a plurality of coil springs disposed about the periphery of the wafer. 44. The device of claim 40, wherein a second insulating member is interposed between the spring member and the second conductive member. 45. The device of claim 28, wherein one of the charge supplied by the first conductive member and the charge supplied by the second conductive member is changeable in relation to each other. 46. The device of claim 28, further comprising a DC power supply for supplying electrical charge. 47. The apparatus of claim 28, further comprising an AC power supply for supplying a charge. 48. The device of claim 28, wherein the second electrically conductive member is disposed within an insulative member. 49. The device of claim 48, wherein the insulating member is a ring. 50. The device of claim 28, further comprising at least one resistor to vary the charge supplied to the wafer or the charge supplied to the second conductive member. The device of claim 28, wherein the second electrically conductive member has an insulating coating. 52. The device of claim 28, wherein the second insulating member is disposed on a side of the second electrically conductive member opposite the wafer. 53·—How to hold a semiconductor wafer during the electropolishing process. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ^ 11 (Please read the back note first and then fill out this page) ) Platinum _, τ Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A8 B8 C8 D8 1275452 夂, patent application scope 6 includes the following steps: placing one surface of the wafer in an electrolyte liquid flow; applying a charge to the wafer with the first conductive member; And applying a charge to the second conductive member, wherein the second conductive member is for attracting current from the electrolyte liquid on the surface of the wafer. 54. The method of claim 53, wherein the second electrically conductive member attracts current near the edge of the wafer to reduce the polishing rate. 55. The method of claim 53, wherein the wafer is rotated such that its electrolyte liquid flows toward the edge of the wafer. </ RTI> 56. The method of claim 53, wherein the second electrically conductive member is placed adjacent the edge of the wafer. 57. The method of claim 53, wherein the second electrically conductive member is a metal annulus. The method of claim 5, further comprising an insulating member disposed between the wafer and the second conductive member. 5. The method of claim 5, wherein the electrically conductive member is placed adjacent to the wafer. 60. The method of claim 53, further comprising adjusting one of its charge supplied to the wafer and one of the charges supplied to the second conductive member relative to each other. 61. The method of claim 53, wherein the charge is supplied by a DC power supply. 62. The method of claim 53, wherein the charge is supplied by an alternating current power supply. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 55 - ——^-------$-- (Please read the note on the back and fill out this page), τ Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Co., Ltd. 1275452 A8 B8 C8 D8 VI. Patent Application Range 7 63. The method of claim 53, wherein the second conductive member is disposed within an insulating member. (Please read the note on the back and then fill out this page.) 64. The method of claim 53, wherein the insulating member is a ring. 65. A device for supervising an end point during an electropolishing process of a metal layer formed on a wafer, comprising: a nozzle for electrolytically polishing a metal layer; and a termination point detector disposed adjacent to the nozzle a reservoir containing an electrolyte liquid coupled to the nozzle; 'a liquid detector disposed in the reservoir, wherein the liquid detector measures the properties of the liquid, and the termination point detector measures the measured properties of the liquid to measure the crystal Circular Properties 〇 66. The device of claim 65, which is further used to terminate the electropolishing process when the measured properties of the wafer reach a target level. 67. The device of claim 65, wherein the nozzle and the end point detector are moved together to electrolytically polish discrete portions of the wafer. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumption Cooperatives 68. The device of claim 65, wherein the nozzle is configured as a fixed nozzle and the wafer is moved relative to the nozzle. 69. The apparatus of claim 65, further comprising a wafer chuck for rotating the wafer. 70. The device of claim 65, wherein the liquid detector detects the concentration of metal ions in the liquid. 7 1, such as the device of claim 70, further including the immersion in the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 8888 ABCD 1275452 VI, the application of the scope of the electrode 8 electrolyte liquid, with The metal ions are removed from the electrolyte liquid when the metal ion concentration reaches a predetermined threshold. (Please read the precautions on the back and fill out this page.) 7 2 ·If the device of claim 7 is applied, if the metal ion concentration reaches a second preset enthalpy, the electrode is used to stop the electrolyte liquid. Remove metal ions. 73. The device of claim 65, wherein the liquid detector comprises an optical detector. 74. The device of claim 73, wherein the optical detector comprises red light. 75. The device of claim 73, wherein the optical detector comprises white light. 76. The device of claim 73, further comprising a reflector, wherein the optical detector reflects light from the reflector. 77. The device of claim 65, wherein the termination point detector _ comprises an optical reflection detector. 7 8 . The device of claim 65, wherein the termination point detector comprises an ultrasonic detector. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumption Cooperatives 79. The device of claim 65, wherein the termination point detector comprises an electromagnetic detector. 80. The device of claim 65, wherein the termination point detector comprises a vortex current detector. 81. The device of claim 65, further comprising a second liquid detector for measuring a second property of the liquid. 82. For the device of claim 81, the end point detector is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 1275452 A8 B8 C8 D8 VI. Patent application scope 9 Two measurements of properties to measure wafer properties. (Please read the note on the back and then fill out this page.) 8 3 · The device of claim 81, wherein the second liquid detector comprises an optical detector. 84. The device of claim 81, wherein the optical detector comprises blue light. 85. The device of claim 81, wherein the optical detector comprises white light. 86. The device of claim 81, wherein the optical detector detects bubbles in the electrolyte liquid. 87. A method for detecting a termination point of an electropolishing process of a wafer, comprising the steps of: electropolishing a wafer using an electrolyte liquid; measuring a property of the wafer using a termination point detector; using a liquid detector to The properties of the electrolyte liquid are measured; and the properties of the liquid measured by the liquid detector are considered to evaluate the properties of the wafer as measured by the termination point detector. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives 88. As in the method of claim 87, the step of electropolishing is terminated when one of the wafers has a measured property that reaches a target. 89. The method of claim 87, wherein the nozzle and the end point detector are moved together to electroplate a discrete portion of the wafer. 90. The method of claim 87, further comprising transferring the wafer relative to a fixed nozzle. 91. The method of claim 87, further comprising rotating the wafer with a wafer chuck. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm). 1275452 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints VI. Patent application scope 1 () 92. If the method of applying for patent scope 87 is further included The metal ion concentration of the liquid is measured by a liquid detector. 93. The method of claim 92, further comprising removing metal ions from the electrolyte liquid when the metal ion concentration reaches a predetermined threshold. 94. The method of claim 92, wherein the metal ion is no longer removed from the electrolyte liquid if the metal ion concentration reaches a second predetermined enthalpy. 9. The method of claim 8 wherein the liquid detector comprises an optical detector. 96. The method of claim 87, wherein the optical detector comprises red light. 97. The method of claim 96, wherein the optical detector comprises white light. 98. The method of claim 96, further comprising reflecting light from a reflector to the optical detector. 99. The method of claim 87, wherein the termination point detector comprises an optical reflection detector. 100. The method of claim 87, wherein the termination point detector comprises an ultrasonic detector. 101. The method of claim 8, wherein the termination point detector comprises an electromagnetic detector. 102. The method of claim 87, further comprising measuring a second property of the liquid. 103. For the method of applying for the patent scope, item 1, 2, where the termination point is detected (please read the notes on the back and then fill in the page) 柒· urj, v0 -_ This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ' '59- 1275452 A8 B8 C8 D8 VI. Patent Application 11 The system measures the second measurement property of the liquid to measure the properties of the wafer. (Please read the notes on the back and fill out this page.) 1 04. For the method of claim 1, the second property of the liquid is measured by a second detector. 105. The method of claim 102, wherein the second liquid detector comprises an optical detector. 106. The method of claim 102, wherein the second optical detector comprises blue light. 107. The method of claim 102, wherein the second optical detector comprises white light. 108. The method of claim 102, wherein the second optical detector detects bubbles in the electrolyte liquid. 109. A device for electrolytically polishing a segmented metal layer on a semiconductor wafer, comprising: a wafer chuck for holding a wafer; a conductive member located around the wafer chuck; The property bureau employee consumption cooperative prints a nozzle for guiding the flow of the electrolyte liquid to the surface of the wafer; and an actuator that rotates the wafer chuck at a sufficient rotational speed to form a thin film of the electrolyte liquid across the wafer The surface is electrically connected to the segmented metal layer. 110. The device of claim 109, wherein the film of electrolyte liquid forms a path to conduct current between the electrolyte liquid and the electrically conductive member. 111. The device of claim 109, wherein the wafer is oriented face down and the electrolyte liquid incident on the wafer is applied to the wafer from the surface of the wafer - 60 - the paper scale applies the Chinese national standard (CNS) A4 size (210X297 mm) 1275452 A8 B8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed six, the patent application scope 12 fell to the edge of the wafer. 112. The device of claim 109, wherein the actuator changes the rotation of the chuck according to the portion of the wafer that is being electropolished. 113. The device of claim 112, wherein the actuator rotates the chuck at a higher speed while polishing a portion of the wafer near the center 〇 114. The device of claim 109 Where the wafer chuck is associated with the nozzle to transfer the wafer. 115. The device of claim 109, wherein the nozzle is moved in relation to the wafer chuck. 116. The device of claim 109, further comprising a shield around the wafer chuck. 117. The device of claim 116, wherein the shielding is moved with the wafer chuck associated with the nozzle. 118. The device of claim 116, wherein the shield and the wafer chuck are mechanically coupled to move in relation to the nozzle. 119. The device of claim 116, wherein the shield is placed from about 1 m to about 10 m from the edge of the chuck. 120. The device of claim 116, wherein the shield is placed about 5 mm from the edge of the chuck. 121. The device of claim 116, wherein the side wall of the shield comprises an L-shaped cross section. 122. The device of claim 116, wherein the side wall of the shield is tapered. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the back and fill out this page) 1275452 A8 B8 C8 D8 VI. Scope of Application 13 123. The device of claim 116, wherein the side wall of the shield extends above or below the chuck. 124. The device of claim 116, wherein the shield comprises a plastic or ceramic material. 125. The device of claim 116, wherein the shield comprises a corrosion resistant metal or alloy. 126. The device of claim 116, wherein the shield is coated with an electrolyte liquid resistant material. 127. A method for electrolytically polishing a segmented metal layer on a semiconductor wafer, comprising: holding a wafer with a wafer chuck, the wafer chuck including a conductive member disposed adjacent the wafer; An electrolyte liquid electropolates the wafer; and rotates the wafer such that the electrolyte liquid incident on the wafer forms a film of the electrolyte liquid on the surface of the wafer. 128. The method of claim 127, wherein the wafer is rotated at a sufficient rotational speed such that the electrolyte liquid incident on the wafer flows to the edge of the wafer without leaving the surface of the wafer. 129. The method of claim 127, further comprising changing the rotation of the chuck according to the portion of the wafer that is being electropolished. 130. The method of claim 129, wherein the wafer is rotated at a higher velocity when the electrolytically polished portion of the wafer is near the center. 131. The method of claim 127, further comprising contacting the nozzle to transfer the wafer. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -62 --^--------Installation -- (Please read the note on the back and fill out this page) Intellectual Property Bureau employee consumption cooperative printed Α8 Β8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1275452 VI. Patent application scope 14 Π 2. The method of applying for patent scope 127, further includes setting up a shielded wafer Around the chuck. 133. The method of claim 127, wherein the electrolyte liquid flows across the edge of the wafer and is incident on the shield. 1 3 4. The method of claim 127, further comprising contacting the nozzle to move the shield. Π 5. The method of claim 127, further comprising moving the shield and the wafer together with the nozzle. 136. The method of claim 127, further comprising contacting the wafer to move the nozzle. 137. An apparatus for electrolytically polishing a wafer, comprising: a nozzle holder for holding one, two or more nozzles adjacent to a supply line of electrolyte liquid, wherein at least one nozzle holder moves relative to each other to couple One of two or more nozzles to the supply line of the electrolyte liquid. 138. The device of claim 137, further comprising an actuator, wherein the actuator is for rotating the nozzle holder to affinity with one of the two or more nozzles. 139. The device of claim 137, wherein the nozzle holder comprises an insulating material. 140. The device of claim 137, wherein the nozzle holder comprises a non-corrosive material. 141. The device of claim 137, wherein the nozzle holder is made of plastic. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) ------- (Please read the note on the back and fill out this page) 1275452 as B8 C8 __D8 7T, Patent Application Serial No. 1-5. The device of claim 137, wherein the nozzle holder is integrally formed with one or more nozzles. (Please read the note on the back and fill out this page.) 143. For the device of claim 137, two or more of the nozzles contain at least two different contours. 144. The device of claim 137, further comprising an end point detector positioned adjacent the nozzle holder. 145. The device of claim 137, further comprising a movable base, wherein the nozzle holder is coupled to the movable base. 146. The device of claim 145, wherein the movable base is for movement in a linear direction and the nozzle holder is for rotation. 147. A method for electrolytically polishing a semiconductor wafer, comprising the steps of: providing a wafer; providing an electrolyte liquid supply; providing two or more nozzles mechanically coupled together; movably placing two or more One of the nozzles is supplied to the electrolyte liquid to direct an electrolyte liquid flow toward the wafer. 148. The method of claim 147, wherein two or more nozzles are mechanically coupled through a nozzle holder. 149. The method of claim 148, wherein the step of movably placing one of the two or more nozzles comprises rotating the nozzle holder. 1 5 0. The method of claim 14, wherein the step of movably placing the nozzle comprises transferring the nozzle holder in a linear direction. 151. For the method of claim 147, two or more of the paper sizes apply to the Chinese National Standard (CNS) A4 specification (210X 297 mm 1 &quot;^7&quot;-------- • 〇 4 - 1275452 A8 B8 C8 D8 Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumption Cooperatives VI. Patent Application Scope 16 The mouth contains at least two different nozzle profiles. 1 52. The method of claim 147, further includes : determining the contour of the metal layer on the wafer; and guiding the electrolyte liquid to flow on the metal layer according to a specific contour of the metal layer. 153. The method of claim i52, wherein different The nozzle comprises two or more different nozzle profiles. 154. The method of claim 152, wherein the different nozzles produce different polishing rates. 1 5 5 · The method of claim 5, wherein Different nozzles are selected to include a relatively high polishing rate on the thick portion of the metal layer and a relatively low polishing rate on the thin portion of the metal layer. 156. The method wherein the contour of the metal layer is determined by a termination detector placed adjacent to two or more nozzles. 157. A nozzle for electrolytically polishing a semiconductor wafer, comprising: a channel having side walls and a far The end opening is for guiding a flow of the electrolyte liquid, wherein the passage comprises a conductive material, and the side wall is bent to approach the distal opening. 158. The nozzle of claim 157, further comprising an insulator disposed in relation to 159. The nozzle of claim 157. wherein the passage comprises a cylindrical shape. 160. The nozzle of claim 157, wherein the passage comprises a circle - ^ Ze - ( Read the notes on the back and fill out this page. τ This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -65 - 1275452 A8 B8 C8 D8 VI. Patent application scope 17 Conical cylinder shape. (Please read the precautions on the back and fill out this page) 1 61. If you apply for the nozzle of No. 1 57 of the patent, further package 3 is a conductive structure placed in the channel. 162. The nozzle of claim 161, wherein the electrically conductive structure comprises a rod. 1 63. The nozzle of claim 1, wherein the electrically conductive structure comprises a rod disposed in the passage. 1 64. The nozzle of claim 1, wherein the electrically conductive structure comprises a plurality of channels. 1 65. The nozzle of claim 1, wherein the cross-sectional dimension of the majority of the channels is in the range of about 0.1 to 10 mm. 166. The nozzle of claim 164, wherein the cross-sectional dimension of the majority of the channels is about one tenth of the diameter of the channel. 167. A method for removing a nozzle used in an electroplating electropolishing apparatus, comprising the steps of: passing a nozzle to provide an electrolyte liquid; and applying a charge to the nozzle, wherein the charge is used to remove metal from the nozzle to the Ministry of Economy The property bureau employee consumption cooperative printed. 168. The method of claim 167, further comprising applying a second opposite charge to the second nozzle, wherein the electrolyte liquid forms a path between the first nozzle and the second nozzle. 169. The method of claim 168, wherein the nozzle and the second nozzle are held closer together during the plating process. 17 0 ·If the method of patent application No. 168 is applied, the nozzle is the anode of the paper. The Chinese standard (CNS) A4 specification (210X297 mm) is used. -66- 1275452 A8 B8 C8 D8 VI. Patent application scope 18 The second nozzle is a cathode. (Please read the precautions on the back and fill out this page.) 17 1 · The method of claim 166, in which part of the electroplated metal is dissolved in the electrolyte liquid. 1 7 2 The method of claim 1, wherein the concentration of the metal ions in the electrolyte liquid is about 3% by weight or less. 173. The method of claim 168, further comprising reversing the charge supplied to the nozzle and the second nozzle to remove the second nozzle. 174. The method of claim 168, wherein the nozzle is an anode and the second nozzle is a cathode. 175. The method of claim 167, wherein the nozzle is charged by a DC power supply. 176. The method of claim 167, wherein the nozzle is charged by an alternating current source. 1 77. The method of claim 1, wherein the method further comprises applying a second opposite charge to the wafer. 178. The method of claim 177, wherein a portion of the electroplated metal is dissolved in the electrolyte liquid. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consortium 179. The method of claim 177, wherein the concentration of metal ions in the electrolyte liquid is about 3% by weight or less. 180. The method of claim 177, wherein the nozzle is charged by a DC power supply. 181. The method of claim 177, wherein the nozzle is charged by an alternating current source. 182. The method of claim 167, further comprising applying the paper scale to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1275452 A8 B8 C8 D8 Patent application scope 19 Second opposite charge to a conductive material ( Please read the notes on the back and fill out this page.) Ministry of Economic Affairs, Intellectual Property Bureau, Staff, Consumer Cooperatives, Printed Paper Size Applicable to China National Standard (CNS) A4 Specification (210X297 mm) 68