CN106567130A - Method for improving roughness of wafers - Google Patents
Method for improving roughness of wafers Download PDFInfo
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- CN106567130A CN106567130A CN201510652465.XA CN201510652465A CN106567130A CN 106567130 A CN106567130 A CN 106567130A CN 201510652465 A CN201510652465 A CN 201510652465A CN 106567130 A CN106567130 A CN 106567130A
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- wafer
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Abstract
The invention discloses a method for improving roughness of wafers. The method comprises the following steps: pre-wetting; electrochemical polishing; electroplating; and drying. During the electroplating step, thickness of a metal layer to be electroplated on the surface of a wafer will not exceed 15 nm. By the method, the metal layer on the surface of the wafer can be removed and the wafer will not be damaged. Meanwhile, roughness of wafer surface can be improved and the wafer can be brighter and cleaner.
Description
Technical field
The present invention relates to semiconductor production and manufacture field, more particularly, it relates to one kind improves wafer roughness
Method.
Background technology
Unstressed electrochemical polishing process can remove the metal level of crystal column surface, compared to cmp work
Skill has many advantages, such as, it is not easy to damage wafer.
Fig. 1 discloses the device and principle involved by existing unstressed electrochemical polishing process.Device therein
Including wafer jig 101, shower nozzle 103 and power supply 104.Wafer jig 101 is used to clamp wafer 102 and band
Dynamic wafer 102 rotates, and shower nozzle 103 is to the surface jet polishing liquid 105 of wafer 102, and shower nozzle 103 being capable of phase
For the center of circle of wafer 102 translates.In polishing process, shower nozzle 103 connects the negative pole of power supply 104, wafer 102
The positive pole of power supply is connect, between power supply 104, shower nozzle 103, polishing fluid 105 and wafer 102 closed-loop path is constituted
Produce electric current.According to the principle of electrochemical reaction, the metal level (typically Cu) on the surface of wafer 102 will lose
Electronics enters solution, so as to reach the purpose for removing metal level.
Existing unstressed electrochemical polishing process mainly includes polishing step and drying steps, and does not contain plating step
Suddenly.Because metal level is removed after the completion of polishing, no longer there is electrochemical reaction, thus directly to wafer 102
It is dried, terminates whole technique.Although metal can be removed using existing unstressed electrochemical polishing process
Layer, but after technique terminates, the surface of wafer 102 is not bright and clean enough, and roughness is very high.
The content of the invention
Present invention is disclosed a kind of method, can improve the roughness of wafer in unstressed electrochemical polishing process.
For achieving the above object, the invention provides following technical scheme：
A kind of method for improving wafer roughness, including：Pre-wetted step；Electro-chemical polish step；Plating step
Suddenly；And drying steps.
Further, the metal layer thickness in plating step to crystal column surface plating is less than 15nm.
Further, in electro-chemical polish step, shower nozzle to wafer jet polishing liquid, shower nozzle connect negative pole, wafer
Connect positive pole.
Further, in plating step, shower nozzle to wafer jet polishing liquid, shower nozzle connect positive pole, and wafer connects negative pole.
Further, wafer rotation, shower nozzle relative to wafer along wafer radial translation.
Further, in plating step, the metal layer thickness of plating is by adjusting the rotating speed of wafer and the shifting of shower nozzle
Speed is controlled by.
Further, in pre-wetted step, shower nozzle to wafer jet polishing liquid, shower nozzle or wafer not receiving electrode.
Further, in drying steps, shower nozzle stops to wafer jet polishing liquid, and wafer rotates to get rid of at a high speed
The polishing fluid of crystal column surface residual.
Present invention is disclosed a kind of method for improving wafer roughness, the method not only remains unstressed electrochemistry
Glossing does not allow the advantage of easy damaged wafer, additionally it is possible to improves the roughness of crystal column surface, makes obtained by polishing
Wafer is brighter and cleaner.
Description of the drawings
Fig. 1 discloses the structural representation of device in unstressed electrochemical polishing process in prior art；
Fig. 2 discloses the flow chart of the specific embodiment of the invention；
Fig. 3 discloses the schematic diagram of pre-wetted step in the specific embodiment of the invention；
Fig. 4 discloses the schematic diagram of electro-chemical polish step in the specific embodiment of the invention；
Fig. 5 discloses the schematic diagram of plating step in the specific embodiment of the invention；
Fig. 6 discloses the schematic diagram of drying steps in the specific embodiment of the invention.
Specific embodiment
With reference to accompanying drawing and ensuing detailed description, the present invention will be better understood：
Fig. 2-Fig. 6 discloses the specific embodiment of the present invention.Wherein, Fig. 2 discloses the specific embodiment of the invention
Flow chart, i.e., a kind of method for improving wafer roughness, including：Pre-wetted step 201；Electrochemical polish
Step 202；Plating step 203；And drying steps 204.Wherein, to wafer 302 in plating step 203
The metal layer thickness of electroplating surface is less than 15nm.Wafer 302 is obtained after electrochemical polishing treatment was received
The roughness of the crystal column surface for obtaining is higher, is not very bright and clean.In order to overcome this defect, the present invention is in polishing knot
Beam increased one electroplating technology, and on the surface of wafer 302 a small amount of metal has been electroplated again, so as to improve crystalline substance
The roughness on 302 surfaces of circle, makes the bright and clean of wafer 302.Simultaneously as the metal layer thickness of plating is very
Thin, less than 15nm, so thin metal level will not be produced not to the performance of wafer 302 and subsequent technique
Good impact, it is thus possible to be allowed to.The metal of plating generally can select copper.
Fig. 3 discloses the pre-wetted step 201 of the specific embodiment of the invention.To wafer 302 before electrochemical polish
Pre-wetted is carried out, more preferable polish results are obtained in that.During pre-wetted, shower nozzle 303 is to the table of wafer 302
Face jet polishing liquid 305, wafer 302 rotates under the drive of wafer jig 301, while shower nozzle 303 is relative
In wafer 302 along wafer 302 radial translation, so as to carry out pre-wetted to the surface of whole wafer 302.Spray
303 edges that wafer 302 can be moved to by the center of wafer 302, it is also possible on the contrary, by wafer 302
Edge be moved to the center of wafer 302.In pre-wetted step 201, it is not necessary to be electrochemically reacted, because
And the circuit breaker being made up of shower nozzle 303, polishing fluid 305, wafer 302 and both positive and negative polarity transducer 306.
The mode of open circuit can be the not receiving electrode of shower nozzle 303, or the not receiving electrode of wafer 302.Wherein both positive and negative polarity conversion
Device 306 is connected with power supply 304, for changing circuit in electrode polarity.
Fig. 4 discloses the electro-chemical polish step 202 of the specific embodiment of the invention.In polishing process, by just
The regulation of negative pole transducer 306, makes shower nozzle 303 connect negative pole, and wafer 302 connects positive pole, at the same shower nozzle 303 to
The jet polishing liquid 305 of wafer 302, so that circuit maintains path.According to the principle of electrochemical reaction, wafer
The metal level on 302 surfaces will lose electronics and become metal ion and enter solution, so as to realize removing the table of wafer 302
The purpose of face metal level.The relative translational motion of the rotary motion of wafer 302 and shower nozzle 303, then ensure that
The whole surface of wafer 302 is polished, without the region omitted.
Fig. 5 discloses the plating step 203 of the specific embodiment of the invention.In electroplating process, turned by both positive and negative polarity
Parallel operation 306 changes the polarity of electrode, makes shower nozzle 303 be connected to positive pole, and wafer 302 is connected to negative pole, shower nozzle 303
Continue to the jet polishing liquid 305 of wafer 302, circuit still maintains path.Now, according to electroplating principle, throw
Metal ion in light liquid is reduced to metal, is electroplated to the surface of wafer 302, so as to improve wafer 302
Roughness.Because the metal electroplated is denier, so electroplating process needs precise control, to ensure plating
Metal layer thickness to the surface of wafer 302 is less than 15nm.For this purpose, the rotating speed for adjusting wafer 302 can be passed through
And the shifting speed of shower nozzle 303 is realizing precise control.I.e. in electroplating process, wafer 302 rotates at a high speed, shower nozzle
303 radial direction rapid translations along wafer 302, shower nozzle 303 is moved to behind edge by the center of circle of wafer 302,
Or circuit breaker is made to the center of circle, rapidly by the border movement of wafer 302, terminate electroplating technology, so as to protect
The metal layer thickness of card plating is less than 15nm.
Fig. 6 discloses the drying steps 204 of the specific embodiment of the invention.The device of combined with electrochemical glossing,
The method that present invention employs drying is dried to wafer 302.During drying, the not fill-before-fire of shower nozzle 303
Polishing fluid 305, thus circuit breaker.Wafer 302 rotates at a high speed, will be attached to the polishing fluid of the residual on surface
Get rid of, realize drying purpose.Wafer 302 is removed after drying, and whole technique is completed.
Above example is intended to the principle and effect of the exemplary explanation present invention, is not intended to limit the present invention's
Technical scheme, this area and association area working technical staff can without prejudice to the present invention spirit and the scope under,
Modifications and changes are carried out to above-described embodiment, but still is belonged within inventive concept of the invention.
Claims (8)
1. a kind of method for improving wafer roughness, it is characterised in that include：
Pre-wetted step；
Electro-chemical polish step；
Plating step；And
Drying steps.
2. the method for improving wafer roughness according to claim 1, it is characterised in that the plating step
Metal layer thickness in rapid to crystal column surface plating is less than 15nm.
3. the method for improving wafer roughness according to claim 1, it is characterised in that the electrochemistry
In polishing step, to wafer jet polishing liquid, the shower nozzle connects negative pole to shower nozzle, and the wafer connects positive pole.
4. the method for improving wafer roughness according to claim 3, it is characterised in that the plating step
In rapid, to wafer jet polishing liquid, the shower nozzle connects positive pole to shower nozzle, and the wafer connects negative pole.
5. the method for improving wafer roughness according to claim 3 or 4, it is characterised in that the crystalline substance
Circle rotation, the shower nozzle relative to wafer along wafer radial translation.
6. the method for improving wafer roughness according to claim 5, it is characterised in that the plating step
In rapid, the metal layer thickness of plating is controlled by by the shifting speed of the rotating speed and shower nozzle that adjust wafer.
7. the method for improving wafer roughness according to claim 3, it is characterised in that the pre-wetted
In step, shower nozzle to wafer jet polishing liquid, the shower nozzle or the wafer not receiving electrode.
8. the method for improving wafer roughness according to claim 3, it is characterised in that the dry step
In rapid, shower nozzle stops to wafer jet polishing liquid, and the wafer rotates to get rid of the throwing of crystal column surface residual at a high speed
Light liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510652465.XA CN106567130A (en) | 2015-10-10 | 2015-10-10 | Method for improving roughness of wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510652465.XA CN106567130A (en) | 2015-10-10 | 2015-10-10 | Method for improving roughness of wafers |
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| CN106567130A true CN106567130A (en) | 2017-04-19 |
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| CN201510652465.XA Pending CN106567130A (en) | 2015-10-10 | 2015-10-10 | Method for improving roughness of wafers |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111424308A (en) * | 2020-04-21 | 2020-07-17 | 温州根旭电子科技有限公司 | Electrolyte polishing foam removing device |
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| US20040182720A1 (en) * | 2000-09-19 | 2004-09-23 | Shuzo Sato | Polishing method, polishing apparatus, plating method, and plating apparatus |
| CN1585835A (en) * | 2001-11-13 | 2005-02-23 | Acm研究公司 | Electropolishing assembly and methods for electropolishing conductive layers |
| CN1685086A (en) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | Electropolishing and electroplating methods |
| CN101459050A (en) * | 2007-12-14 | 2009-06-17 | 盛美半导体设备（上海）有限公司 | Method and apparatus for metallic layer front wafer surface presoaking for electrochemical or chemical deposition |
| CN101748459A (en) * | 2008-12-01 | 2010-06-23 | 盛美半导体设备（上海）有限公司 | Method for depositing copper film on semiconductor wafer super-uniformly |
| CN102054712A (en) * | 2009-11-05 | 2011-05-11 | 北大方正集团有限公司 | Method for controlling surface roughness of circuit board |
| CN103474395A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | TSV planarization method |
| CN103590092A (en) * | 2012-08-16 | 2014-02-19 | 盛美半导体设备（上海）有限公司 | Device and method used for electrochemical polishing/electroplating |
| CN104637836A (en) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备（上海）有限公司 | Wafer processing device |
-
2015
- 2015-10-10 CN CN201510652465.XA patent/CN106567130A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351531A (en) * | 1999-04-03 | 2002-05-29 | 纳托尔公司 | Method and apparatus for plating and polishing a semiconductor substrate |
| US20040182720A1 (en) * | 2000-09-19 | 2004-09-23 | Shuzo Sato | Polishing method, polishing apparatus, plating method, and plating apparatus |
| CN1585835A (en) * | 2001-11-13 | 2005-02-23 | Acm研究公司 | Electropolishing assembly and methods for electropolishing conductive layers |
| CN1685086A (en) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | Electropolishing and electroplating methods |
| CN101459050A (en) * | 2007-12-14 | 2009-06-17 | 盛美半导体设备（上海）有限公司 | Method and apparatus for metallic layer front wafer surface presoaking for electrochemical or chemical deposition |
| CN101748459A (en) * | 2008-12-01 | 2010-06-23 | 盛美半导体设备（上海）有限公司 | Method for depositing copper film on semiconductor wafer super-uniformly |
| CN102054712A (en) * | 2009-11-05 | 2011-05-11 | 北大方正集团有限公司 | Method for controlling surface roughness of circuit board |
| CN103590092A (en) * | 2012-08-16 | 2014-02-19 | 盛美半导体设备（上海）有限公司 | Device and method used for electrochemical polishing/electroplating |
| CN103474395A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | TSV planarization method |
| CN104637836A (en) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备（上海）有限公司 | Wafer processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111424308A (en) * | 2020-04-21 | 2020-07-17 | 温州根旭电子科技有限公司 | Electrolyte polishing foam removing device |
| CN111424308B (en) * | 2020-04-21 | 2020-12-22 | 山东中庆环保科技有限公司 | Electrolyte polishing foam removing device |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. fourth 1690 Applicant before: ACM (SHANGHAI) Inc. |
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Application publication date: 20170419 |
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