CN104625941B - Wafer processing apparatus - Google Patents
Wafer processing apparatus Download PDFInfo
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- CN104625941B CN104625941B CN201310566941.7A CN201310566941A CN104625941B CN 104625941 B CN104625941 B CN 104625941B CN 201310566941 A CN201310566941 A CN 201310566941A CN 104625941 B CN104625941 B CN 104625941B
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- wafer
- swinging arm
- rotary swinging
- chuck plate
- jet
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
Present invention is disclosed a kind of wafer processing apparatus, including：Wall protrudes outward the cavity to form stage portion.The wafer chuck plate of vertical clamping wafer.The first rotary swinging arm with round end and end, round end are arranged in the stage portion of cavity, and the first rotary swinging arm is rotated around round end in perpendicular.First jet in the end of the first rotary swinging arm, to be processed face jet electrolytic liquid of the first jet to wafer are set.The second rotation with round end and end is put, and round end is arranged in the stage portion of cavity, and the second rotary swinging arm is rotated around round end in perpendicular.Second nozzle in the end of the second rotary swinging arm, edge part jet electrolytic liquid of the second nozzle to the face to be processed of wafer are set.Power supply is electrically connected respectively with first jet and second nozzle so that electrolyte is electrically charged.Driver is connect with wafer chuck plate, driver driving wafer chuck plate risen or fallen along the central shaft of wafer chuck plate or around wafer chuck plate center axis rotation.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices more particularly to a kind of wafer processing apparatus.
Background technology
Semiconductor devices is using many different processing step manufactures or to process on a semiconductor wafer, is formed therefrom
Some transistors and interconnection element.In order to be connected with each other on circuit with the relevant transistor line end of the semiconductor crystal wafer
Come, needs to make conductive raceway groove, access or similar structures in the dielectric material as semiconductor devices component part.Raceway groove
And access transmission telecommunications number and electricity between the external circuit of transistor, the internal circuit of semiconductor devices and semiconductor devices
Energy.
During making interconnection element, semiconductor crystal wafer to be subjected to for example, mask, etching and deposition process, by
This forms the electronic circuit needed for semiconductor devices.Especially, it can perform multiple mask and etching step come in semiconductor die
The Butut being made of sunk area is made in dielectric layer on circle, these sunk areas as formed circuit interconnection line raceway groove and
Access.Then, a deposition process is can perform to deposit a metal layer on a semiconductor wafer, is thus all formed sediment in raceway groove and access
Metal has been accumulated, and metal layer is also deposited on the non-sunk area of semiconductor crystal wafer.In order to keep apart each interconnection line,
The metal layer being deposited on the non-sunk area of semiconductor crystal wafer is removed.
It is chemical machine by the common method that the metal layer being deposited on semiconductor crystal wafer dielectric layer on non-sunk area removes
Tool polishes（CMP）, CMP method is widely used in semi-conductor industry, and CMP method can be polished and be polished in raceway groove and access
Metal layer on metal layer and dielectric layer on non-sunk area.However, can apply to semiconductor crystal wafer during CMP larger
Mechanicals efforts, the mechanicals efforts can have an adverse effect to semiconductor structure, for example, working as copper and low K or ultralow K dielectric mediums
When material is applied in semiconductor structure, larger mechanicals efforts semiconductor structure may be made to generate layering, dish is recessed, warpage
The defects of with scraping.
It would be desirable that developing new device and technique to execute deposit and polishing treatment to metal layer.For example, can
Metal layer is deposited on semiconductor crystal wafer using plating or electrochemical polishing process or is removed from semiconductor crystal wafer, especially
It is, in electrochemical polishing process, due to only having electrolyte to be contacted with metal layer, electrochemical polish can be answered without machinery
The removal metal layer of power, to avoid due to the issuable technological deficiency of mechanicals efforts.It is commonly used in electrochemical polish
And/or the wafer processing apparatus of plating includes mainly with lower member：The wafer chuck plate of wafer is clamped, driving wafer chuck plate level is moved
Dynamic, vertical shift and the driver of rotation are arranged in below wafer chuck plate with the spray of the metal layer jet electrolytic liquid on wafer
The power supply of mouth, electric connection wafer and nozzle, wherein when electrochemical polish, the anode of power supply is electrically connected with wafer, the cathode of power supply
It is electrically connected with nozzle；When plating, the anode of power supply is electrically connected with nozzle, and the cathode of power supply is electrically connected with wafer.It is this common
A nozzle is normally only fixedly installed in wafer processing apparatus below wafer chuck plate, relatively low so as to cause wafer processing efficiency.
Invention content
The object of the present invention is to provide a kind of wafer processing apparatus, and the apparatus structure is compact, and can improve wafer processing
Efficiency.
To achieve the above object, wafer processing apparatus proposed by the present invention, including：Cavity, wafer chuck plate, the first rotation pendulum
Arm, first jet, the second rotary swinging arm, second nozzle, power supply and driver.The wall of cavity protrudes outward to form stage portion.It is brilliant
Wafer is clamped in circle chuck vertically.First rotary swinging arm has round end and the end opposite with round end, the first rotary swinging arm
Round end is arranged in the stage portion of cavity, the first rotary swinging arm can around the first rotary swinging arm round end in perpendicular
Rotation.First jet is arranged in the end of the first rotary swinging arm, to be processed face jet electrolytic liquid of the first jet to wafer.Second
There is rotary swinging arm round end and the end opposite with round end, the round end of the second rotary swinging arm the stage portion in cavity is arranged
On, the second rotary swinging arm can be rotated around the round end of the second rotary swinging arm in perpendicular.Second nozzle is arranged second
The end of rotary swinging arm, edge part jet electrolytic liquid of the second nozzle to the face to be processed of wafer.Power supply respectively with first jet
And second nozzle electrical connection is so that electrolyte is electrically charged.Driver is connect with wafer chuck plate, and driver drives wafer chuck plate along brilliant
Circle chuck central shaft rise or fall or around wafer chuck plate center axis rotation.
In one embodiment, in wafer machining process, round end of first rotary swinging arm around the first rotary swinging arm
Rotation so that first jet is moved from the center in the face to be processed of wafer to the edge in the face to be processed of wafer, the second rotation pendulum
Arm remains stationary as, edge part jet electrolytic liquid of the second nozzle to the face to be processed of wafer.
In one embodiment, the quantity of the first rotary swinging arm and first jet is not limited to one.
In one embodiment, the quantity of the second rotary swinging arm and second nozzle is not limited to one.
In one embodiment, when electrochemical polish, the anode of power supply is electrically connected with second nozzle, the cathode of power supply and
One nozzle is electrically connected, and when plating, the anode of power supply is electrically connected with first jet, and the cathode of power supply is electrically connected with second nozzle.
In one embodiment, wafer chuck plate is vacuum chuck.
In one embodiment, the periphery of wafer chuck plate is provided with protective cover, when electrolyte is sputtered onto on protective cover, electrolysis
Liquid is wandered along the inner wall of protective cover to cavity.
In one embodiment, which still further comprises holder, and holder is arranged at the center of wafer chuck plate, and holder exists
It can be risen under the driving of actuator and the lower section positioned at the top of wafer chuck plate or decline and positioned at wafer chuck plate.Holder is true
Empty holder.
In conclusion several first jets and second nozzle can be arranged to the to be added of wafer in wafer processing apparatus of the present invention
Work face jet electrolytic liquid, to improve wafer processing efficiency, and wafer processing apparatus of the present invention is simple in structure, compact.
Description of the drawings
Fig. 1 discloses the cross-sectional view of the first embodiment according to wafer processing apparatus of the present invention.
Fig. 2 discloses the upward view of the first embodiment according to wafer processing apparatus of the present invention.
Fig. 3 discloses the vertical view of the first embodiment according to wafer processing apparatus of the present invention.
Fig. 4 discloses the vertical view of the first embodiment according to wafer processing apparatus of the present invention, wherein wafer processing apparatus
Wafer processing technology is not carried out.
Fig. 5 discloses the another upward view of the first embodiment according to wafer processing apparatus of the present invention, wherein wafer is processed
There are three the first rotary swinging arm and three first jets for device tool.
Fig. 6 discloses the cross-sectional view of the second embodiment according to wafer processing apparatus of the present invention.
Fig. 7 discloses the vertical view of the second embodiment according to wafer processing apparatus of the present invention.
Fig. 8 discloses the section knot when loading or unloading wafer according to the second embodiment of wafer processing apparatus of the present invention
Structure schematic diagram.
Fig. 9 discloses the vertical view of the second embodiment according to wafer processing apparatus of the present invention, wherein wafer processing apparatus
Wafer processing technology is not carried out.
Figure 10 discloses the another vertical view of the second embodiment according to wafer processing apparatus of the present invention, wherein wafer adds
Tooling sets tool, and there are three the first rotary swinging arm and three first jets.
Figure 11 discloses the cross-sectional view of the 3rd embodiment according to wafer processing apparatus of the present invention.
Figure 12 discloses the right view of the 3rd embodiment according to wafer processing apparatus of the present invention.
Figure 13 discloses the section when loading or unloading wafer according to the 3rd embodiment of wafer processing apparatus of the present invention
Structural schematic diagram.
Figure 14 discloses the right view of the 3rd embodiment according to wafer processing apparatus of the present invention, wherein wafer processing dress
It sets and does not carry out wafer processing technology.
Figure 15 discloses the another right view of the 3rd embodiment according to wafer processing apparatus of the present invention, wherein wafer adds
Tooling sets tool, and there are three the first rotary swinging arm and three first jets.
Specific implementation mode
For technology contents, construction feature, institute's reached purpose and effect that the present invention will be described in detail, below in conjunction with embodiment
And schema is coordinated to be described in detail.
Referring to figs. 1 to Fig. 5, the first embodiment according to wafer processing apparatus of the present invention is disclosed.As shown in Figure 1, disclosing
According to the cross-sectional view of the first embodiment of wafer processing apparatus of the present invention.The wafer processing apparatus includes：Cavity
110, wafer chuck plate 120, the first rotary swinging arm 130, first jet 140, the second rotary swinging arm 150, second nozzle 160, power supply
And driver.There is cavity 110 bottom wall, side wall and roof, the side wall of cavity 110 to protrude outward to form stage portion 111, cavity
The stage portion 111 of 110 side walls is generally formed in the middle part of 110 side wall of cavity and parallel with the bottom wall of cavity 110.Wafer chuck plate
120 are laid in the top of 110 bottom wall of cavity, and wafer 170 is clamped in wafer chuck plate 120, and wafer 170 faces down, it is preferred that brilliant
Circle chuck 120 is vacuum chuck.First rotary swinging arm 130 has round end and the end opposite with round end, the first rotation pendulum
The round end of arm 130 is arranged in the stage portion 111 of 110 side wall of cavity, and the first rotary swinging arm 130 can be around the first rotary swinging arm
130 round end rotation.First jet 140 is set to the end of the first rotary swinging arm 130, and first jet 140 is to wafer chuck plate
The front jet electrolytic liquid of wafer 170 on 120.Second rotary swinging arm 150 has round end and the end opposite with round end,
The round end of second rotary swinging arm 150 is arranged in the stage portion 111 of 110 side wall of cavity, and the second rotary swinging arm 150 can be around
The round end of two rotary swinging arms 150 rotates.Second nozzle 160 is set to the end of the second rotary swinging arm 150, second nozzle 160
170 positive edge part jet electrolytic liquid of wafer on wafer chuck plate 120.Power supply is sprayed with first jet 140 and second respectively
Mouth 160 is electrically connected so that electrolyte is electrically charged, and when electrochemical polish, the anode of power supply is electrically connected with second nozzle 160, power supply
Cathode is electrically connected with first jet 140；When plating, the anode of power supply is electrically connected with first jet 140, the cathode of power supply and
Two nozzles 160 are electrically connected.Driver is connect with wafer chuck plate 120, and driver drives wafer chuck plate 120 along wafer chuck plate 120
Central shaft rises or falls or around center axis rotation.
With reference to Fig. 2 and Fig. 3, the upward view and vertical view of the first embodiment according to wafer processing apparatus of the present invention are disclosed
Figure.When carrying out wafer processing technology using the wafer processing apparatus, for example carrying out electrochemical polish and/or plating, wafer chuck plate
120 clamping wafers 170, driver driving wafer chuck plate 120 drop to process station, meanwhile, driver drives wafer chuck plate
120 around wafer chuck plate 120 center axis rotation.First rotary swinging arm 130 is rotated around the round end of the first rotary swinging arm 130, is made
Obtain the center that first jet 140 faces wafer 170.Second rotary swinging arm 150 turns around the round end of the second rotary swinging arm 150
It is dynamic so that second nozzle 160 faces the edge part of wafer 170.Power on, first jet 140 and second nozzle 160 are distinguished
To the center and peripheral portion jet electrolytic liquid of wafer 170.In order to avoid electrolyte splashes, preferably, in the outer of wafer chuck plate 120
Setting protective cover 180 is enclosed, when electrolyte is sputtered onto on protective cover 180, electrolyte is wandered along the inner wall of protective cover 180 to cavity
110.In electrochemical polish and/or electroplating process, the first rotary swinging arm 130 is rotated, makes first jet 140 from wafer
170 center is moved to the edge of wafer 170, and the second rotary swinging arm 150 remains stationary as, as shown in Fig. 2, the dotted line in Fig. 2
The track moved for first jet 140.The ginsengs such as the speed moved by the rotating speed or first jet 140 that control wafer chuck plate 120
Number realizes the uniformity of electrochemical polish and/or plating.
Referring to Fig.1 and Fig. 4, plummer 190, plummer 190 and 120 phase of wafer chuck plate are provided on the bottom wall of cavity 110
To arrangement.After electrochemical polish and/or electroplating technology, the first rotary swinging arm 130 and the second rotary swinging arm 150 rotate respectively
To the side-walls close to cavity 110.Driver driving wafer chuck plate 120 drops to the top of plummer 190, wafer chuck plate 120
Wafer 170 is discharged on plummer 190, finally, wafer 170 is taken away from plummer 190.In order to reduce wafer 170 just
The contact area in face and plummer 190 is provided with load-carrying ring 191 on plummer 190, and wafer 170 is supported by load-carrying ring 191,
Consequently only that the edge of wafer 170 is contacted with load-carrying ring 191.
In order to improve wafer processing efficiency, wafer processing apparatus is sprayed with the first rotary swinging arm of more than one 130 and first
Mouth 140.As shown in figure 5, the first rotary swinging arm 130 and three first jets 140 there are three wafer processing apparatus settings, adjacent two
Angle between first rotary swinging arm 130 is 120 °, in electrochemical polish and/or electroplating process, this three first rotations
The direction that switch arm 130 rotates is consistent, this three the first rotary swinging arms 130 is avoided to interfere.Wafer processing apparatus can be with
With the second rotary swinging arm of more than one 150 and second nozzle 160, the second rotary swinging arm 150 is set to adjacent two first rotations
The centre of swing arm 130.
With reference to Fig. 6 to Figure 10, the second embodiment according to wafer processing apparatus of the present invention is disclosed.As shown in fig. 6, the crystalline substance
Justifying processing unit (plant) includes：Cavity 210, wafer chuck plate 220, the first rotary swinging arm 230, first jet 240, the second rotary swinging arm
250, second nozzle 260, power supply and driver.There is cavity 210 bottom wall, side wall and roof, the side wall of cavity 210 to protrude outward
Form stage portion 211, the stage portion 211 of 210 side wall of cavity be generally formed in the middle part of 210 side wall of cavity and with cavity 210
Bottom wall is parallel.Compared with first embodiment, the wafer chuck plate 220 in the present embodiment is inverted on the bottom wall of cavity 210, wafer
The horizontal clamping wafer 270 of chuck 220, wafer 270 face up.First rotary swinging arm 230 has round end and and round end
The round end of opposite end, the first rotary swinging arm 230 is arranged in the stage portion 211 of 210 side wall of cavity, the first rotation pendulum
Arm 230 can be rotated around the round end of the first rotary swinging arm 230.First jet 240 is set to the end of the first rotary swinging arm 230
End, the front jet electrolytic liquid of wafer 270 of the first jet 240 on wafer chuck plate 220.Second rotary swinging arm 250 has rotation
Turn end and the stage portion 211 in 210 side wall of cavity is arranged in the end opposite with round end, the round end of the second rotary swinging arm 250
On, the second rotary swinging arm 250 can be rotated around the round end of the second rotary swinging arm 250.Second nozzle 260 is set to the second rotation
The end of swing arm 250, wafer 270 positive edge part jet electrolytic liquid of the second nozzle 260 on wafer chuck plate 220.Power supply
Respectively with first jet 240 and second nozzle 260 is electrically connected so that electrolyte is electrically charged, when electrochemical polish, the anode of power supply
It is electrically connected with second nozzle 260, the cathode of power supply is electrically connected with first jet 240；When plating, the anode and first jet of power supply
240 electrical connections, the cathode of power supply are electrically connected with second nozzle 260.Driver is connect with wafer chuck plate 220, and driver driving is brilliant
Circle chuck 220 rises or falls along the central shaft of wafer chuck plate 220 or around center axis rotation.
With reference to Fig. 7, when carrying out electrochemical polish and/or electroplating technology using the wafer processing apparatus, wafer chuck plate 220 presss from both sides
Wafer 270 is held, driver driving wafer chuck plate 220 rises to process station, meanwhile, driver drives wafer chuck plate 220 around crystalline substance
The center axis rotation of circle chuck 220.First rotary swinging arm 230 is rotated around the round end of the first rotary swinging arm 230 so that the first spray
Mouth 240 faces the center of wafer 270.Second rotary swinging arm 250 is rotated around the round end of the second rotary swinging arm 250 so that the
Two nozzles 260 face the edge part of wafer 270.Power on, first jet 240 and second nozzle 260 are respectively to wafer 270
Center and peripheral portion jet electrolytic liquid.Since wafer chuck plate 220 is arranged on the bottom wall of cavity 210, it is located at step
210 side wall of cavity between 210 bottom wall of portion 211 and cavity can prevent electrolyte from splashing, in the present embodiment, be omitted
Protective cover.In electrochemical polish and/or electroplating process, the first rotary swinging arm 230 is rotated, makes first jet 240 from crystalline substance
The center of circle 270 is moved to the edge of wafer 270, and the second rotary swinging arm 250 remains stationary as.By controlling wafer chuck plate 220
Rotating speed or the parameters such as speed that move of first jet 240, realize the uniformity of electrochemical polish and/or plating.
For the ease of loading or unloading wafer 270, in the present embodiment, wafer processing apparatus still further comprises holder
290, holder 290 is arranged at the center of wafer chuck plate 220, and holder 290 can rise under the driving of actuator and be located at wafer
Top or the decline of chuck 220 and positioned at wafer chuck plate 220 lower section, preferably, the holder 290 be Suction type frame.Such as Fig. 8
Shown in Fig. 9, after electrochemical polish and/or electroplating technology, the first rotary swinging arm 230 and the second rotary swinging arm 250 difference
Turn to the side-walls close to cavity 210.Driver driving wafer chuck plate 220 declines and holder 290 is made to be located at wafer chuck plate
Wafer 270 is clamped and holds up by 220 top, holder 290, and finally, wafer 270 is taken away from holder 290；Alternatively, actuator drives
Wafer 270 is clamped and holds up by the top moved the rise of holder 290 and holder 290 is made to be located at wafer chuck plate 220, holder 290, finally,
Wafer 270 is taken away from holder 290.
In order to improve wafer processing efficiency, wafer processing apparatus is sprayed with the first rotary swinging arm of more than one 230 and first
Mouth 240.As shown in Figure 10, there are three the first rotary swinging arm 230 and three first jets 240 for wafer processing apparatus setting, adjacent
Angle between two first rotary swinging arms 230 is 120 °, in electrochemical polish and/or electroplating process, this three first rotations
The direction that switch arm 230 rotates is consistent, this three the first rotary swinging arms 230 is avoided to interfere.Wafer processing apparatus can be with
With the second rotary swinging arm of more than one 250 and second nozzle 260, the second rotary swinging arm 250 is set to adjacent two first rotations
The centre of swing arm 230.
Referring to Fig.1 1 to Figure 15, disclose the 3rd embodiment according to wafer processing apparatus of the present invention.With second embodiment
It compares, the present embodiment is equivalent to is rotated by 90 ° arrangement by the wafer processing apparatus described in second embodiment.Specifically, such as Figure 11 institutes
Show, which includes：Cavity 310, wafer chuck plate 320, the first rotary swinging arm 330, first jet 340, second revolve
Switch arm 350, second nozzle 360, power supply and driver.Wafer 370 is clamped in wafer chuck plate 320 vertically.First rotary swinging arm 330
With round end and the end opposite with round end, the stage portion in cavity 310 is arranged in the round end of the first rotary swinging arm 330
On 311, the first rotary swinging arm 330 can be rotated around the round end of the first rotary swinging arm 330 in perpendicular.First jet
340 are set to the end of the first rotary swinging arm 330, the front injection of wafer 370 of the first jet 340 on wafer chuck plate 320
Electrolyte.Second rotary swinging arm 350 has round end and the end opposite with round end, the round end of the second rotary swinging arm 350
Be arranged in the stage portion 311 of cavity 310, the second rotary swinging arm 350 can around the second rotary swinging arm 350 round end vertical
Rotation in surface.Second nozzle 360 is set to the end of the second rotary swinging arm 350, and second nozzle 360 is on wafer chuck plate 320
370 positive edge part jet electrolytic liquid of wafer.Power supply be electrically connected respectively with first jet 340 and second nozzle 360 so that
Electrolyte is electrically charged, and when electrochemical polish, the anode of power supply is electrically connected with second nozzle 360, the cathode and first jet of power supply
340 electrical connections；When plating, the anode of power supply is electrically connected with first jet 340, and the cathode of power supply is electrically connected with second nozzle 360.
Driver is connect with wafer chuck plate 320, and driver driving wafer chuck plate 320 rises or falls along the central shaft of wafer chuck plate 320
Or around center axis rotation.
Referring to Fig.1 2, when carrying out electrochemical polish and/or electroplating technology using the wafer processing apparatus, wafer chuck plate 320
Vertical clamping wafer 370, driver driving wafer chuck plate 320 rise to process station, meanwhile, driver drives wafer chuck plate
320 around wafer chuck plate 320 center axis rotation.First rotary swinging arm 330 is rotated around the round end of the first rotary swinging arm 330, is made
Obtain the center that first jet 340 faces wafer 370.Second rotary swinging arm 350 turns around the round end of the second rotary swinging arm 350
It is dynamic so that second nozzle 360 faces the edge part of wafer 370.Power on, first jet 340 and second nozzle 360 are distinguished
To the center and peripheral portion jet electrolytic liquid of wafer 370.In order to avoid electrolyte splashes, preferably, in the outer of wafer chuck plate 320
Setting protective cover 380 is enclosed, when carrying out electrochemical polish and/or electroplating technology, rises protective cover 380, electrolyte is sputtered onto protection
When on cover 380, electrolyte is wandered along the inner wall of protective cover 380 to cavity 310.In electrochemical polish and/or electroplating process
In, the first rotary swinging arm 330 is rotated, first jet 340 is made to be moved from the center of wafer 370 to the edge of wafer 370, and the
Two rotary swinging arms 350 remain stationary as.The parameters such as the speed moved by the rotating speed or first jet 340 that control wafer chuck plate 320,
Realize the uniformity of electrochemical polish and/or plating.
Referring to Fig.1 3 to Figure 14, after electrochemical polish and/or electroplating technology, fall protective cover 380, the first rotation
Swing arm 330 and the second rotary swinging arm 350 turn to the side-walls close to cavity 310 respectively.Driver drives under wafer chuck plate 320
Wafer 370 is clamped and holds up by the top for dropping and holder 390 being made to be located at wafer chuck plate 320, holder 390, and finally, wafer 370 is from branch
It is taken away on frame 390；Alternatively, actuator driving arm 390 rises and holder 390 is made to be located at the top of wafer chuck plate 320, holder
Picking-up is clamped in wafer 370 by 390, and finally, wafer 370 is taken away from holder 390.
In order to improve wafer processing efficiency, wafer processing apparatus is sprayed with the first rotary swinging arm of more than one 330 and first
Mouth 340.As shown in figure 15, there are three the first rotary swinging arm 330 and three first jets 340 for wafer processing apparatus setting, adjacent
Angle between two first rotary swinging arms 330 is 120 °, in electrochemical polish and/or electroplating process, this three first rotations
The direction that switch arm 330 rotates is consistent.Wafer processing apparatus can also have the second rotary swinging arm of more than one 350 and second to spray
Mouth 360, the second rotary swinging arm 350 are set to the centre of adjacent two first rotary swinging arms 330.
It can be seen from the above, wafer processing apparatus of the present invention by using several first jets and second nozzle to wafer just
Face jet electrolytic liquid, to improve wafer processing efficiency, and wafer processing apparatus of the present invention is simple in structure, compact.
In conclusion the present invention is illustrated by the above embodiment and correlative type, oneself is specific, full and accurate to disclose correlation
Technology allows those skilled in the art to implement according to this.And embodiment described above is used only to illustrate the present invention, rather than
For limiting the present invention, interest field of the invention should be defined by the claim of the present invention.As for member described herein
Number of packages purpose changes or the replacement etc. of equivalence element still should all belong to interest field of the invention.
Claims (8)
1. a kind of wafer processing apparatus, which is characterized in that including：
The wall of cavity, the cavity protrudes outward to form stage portion；
Wafer is clamped in wafer chuck plate, the wafer chuck plate vertically；
First rotary swinging arm, first rotary swinging arm have round end and the end opposite with round end, the first rotary swinging arm
Round end be arranged in the stage portion of cavity, the first rotary swinging arm can around the first rotary swinging arm round end in perpendicular
Interior rotation；
First jet, the first jet are arranged in the end of the first rotary swinging arm, and first jet is sprayed to the face to be processed of wafer
Penetrate electrolyte；
Second rotary swinging arm, second rotary swinging arm have round end and the end opposite with round end, the second rotary swinging arm
Round end be arranged in the stage portion of cavity, the second rotary swinging arm can around the second rotary swinging arm round end in perpendicular
Interior rotation；
Second nozzle, the second nozzle are arranged in the end of the second rotary swinging arm, and second nozzle is to the face to be processed of wafer
Edge part jet electrolytic liquid；
Power supply, the power supply are electrically connected respectively with first jet and second nozzle so that electrolyte is electrically charged；And
Driver, the driver are connect with wafer chuck plate, and driver drives wafer chuck plate to rise along the central shaft of wafer chuck plate
Decline or around wafer chuck plate center axis rotation；
Wherein, when carrying out electrochemical polish, the anode of the power supply is electrically connected with second nozzle, the cathode of power supply and the first spray
Mouth is electrically connected, and when being electroplated, the anode of power supply is electrically connected with first jet, and the cathode of power supply is electrically connected with second nozzle.
2. wafer processing apparatus according to claim 1, which is characterized in that in electrochemical polish or electroplating process
In, first rotary swinging arm is rotated around the round end of the first rotary swinging arm so that first jet is from the face to be processed of wafer
Center is moved to the edge in the face to be processed of wafer, and the second rotary swinging arm remains stationary as, and second nozzle is to the face to be processed of wafer
Edge part jet electrolytic liquid.
3. wafer processing apparatus according to claim 1, which is characterized in that first rotary swinging arm and first jet
Quantity is not limited to one.
4. wafer processing apparatus according to claim 1, which is characterized in that second rotary swinging arm and second nozzle
Quantity is not limited to one.
5. wafer processing apparatus according to claim 1, which is characterized in that the wafer chuck plate is vacuum chuck.
6. wafer processing apparatus according to claim 1, which is characterized in that the periphery of the wafer chuck plate is provided with protection
Cover, when electrolyte is sputtered onto on protective cover, electrolyte is wandered along the inner wall of protective cover to cavity.
7. wafer processing apparatus according to claim 1, which is characterized in that still further comprise holder, holder setting exists
The center of wafer chuck plate, holder can rise under the driving of actuator and be located at crystalline substance positioned at the top of wafer chuck plate or decline
The lower section of circle chuck.
8. wafer processing apparatus according to claim 7, which is characterized in that the holder is Suction type frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566941.7A CN104625941B (en) | 2013-11-14 | 2013-11-14 | Wafer processing apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566941.7A CN104625941B (en) | 2013-11-14 | 2013-11-14 | Wafer processing apparatus |
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| Publication Number | Publication Date |
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| CN104625941A CN104625941A (en) | 2015-05-20 |
| CN104625941B true CN104625941B (en) | 2018-09-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105483815B (en) * | 2015-12-18 | 2018-02-23 | 上海集成电路研发中心有限公司 | A kind of electrochemical polish apparatus and the electrochemical polishing method using the device |
| CN110142689B (en) * | 2019-04-17 | 2021-09-14 | 杭州众硅电子科技有限公司 | Wafer loading support, wafer loading system and wafer loading method |
| CN110144616B (en) * | 2019-06-14 | 2020-11-13 | 厦门通富微电子有限公司 | Anode mechanism for electroplating and electroplating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6187152B1 (en) * | 1998-07-17 | 2001-02-13 | Cutek Research, Inc. | Multiple station processing chamber and method for depositing and/or removing material on a substrate |
| US6709544B2 (en) * | 2002-07-24 | 2004-03-23 | United Microelectronics Corp. | Chemical mechanical polishing equipment |
| CN2758971Y (en) * | 2004-09-14 | 2006-02-15 | 微芯科技有限公司 | Wafer bearing device for wafer etching equipment |
| CN102124545B (en) * | 2008-08-14 | 2013-11-06 | 应用材料公司 | Chemical mechanical polisher having movable slurry dispensers and method |
| JP5405887B2 (en) * | 2009-04-27 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | Polishing apparatus and polishing method |
| US10857649B2 (en) * | 2011-09-22 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for performing a polishing process in semiconductor fabrication |
| CN203245737U (en) * | 2013-05-14 | 2013-10-23 | 中芯国际集成电路制造(北京)有限公司 | Multifunctional grinding liquid supply structure and grinding device |
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2013
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai city Pudong New Area Zhangjiang High Tech Park of Shanghai Cailun Road No. fourth 1690 Patentee before: ACM (SHANGHAI) Inc. |