CN2758971Y - Wafer bearing device for wafer etching equipment - Google Patents

Wafer bearing device for wafer etching equipment Download PDF

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Publication number
CN2758971Y
CN2758971Y CN 200420093269 CN200420093269U CN2758971Y CN 2758971 Y CN2758971 Y CN 2758971Y CN 200420093269 CN200420093269 CN 200420093269 CN 200420093269 U CN200420093269 U CN 200420093269U CN 2758971 Y CN2758971 Y CN 2758971Y
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CN
China
Prior art keywords
wafer
insulating disc
bearing device
metal support
etching equipment
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN 200420093269
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Chinese (zh)
Inventor
陈汉阳
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WELL THIN Tech Ltd
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WELL THIN Tech Ltd
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Priority to CN 200420093269 priority Critical patent/CN2758971Y/en
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Publication of CN2758971Y publication Critical patent/CN2758971Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a bearing device; a first insulation disc is arranged at the top end of a main lifting shaft of a wafer lifting machine group; a metal support disc is arranged at the upper part of the first insulation disc, and a second insulation disc is arranged at the upper part of the metal support disc; in addition, the second insulation disc, the metal support disc and the first insulation disc are locked fixedly at the top end of the main lifting shaft by a bolt; electrodes of the metal support disc are communicated, and the second insulation disc is covered by the second insulation disc within the structure mould of a wafer periphery. Thus, the utility model prevents the metal support disc from being struck by electric pulp to ensure the integrity of the second insulation disc.

Description

The wafer bearing device of crystal round etching equipment
Technical field
The utility model is the central improved structure in order to the carrying wafer of design crystal round etching equipment, aims to provide a replaceable original member, and effectively reduces the wafer bearing device that damaged by electric slurry.
Background technology
Press, need in manufacture of semiconductor through the etching and processing processing procedure, in order to certain material is removed on crystal column surface, wherein universe formula etching (being called electric oar etching again) is present the most frequently used etching mode, its be with hydrogen as main etching media, and drive reaction by electricity slurry energy.
As shown in Figure 1, be a kind of wafer current etch process the crystal round etching equipment cutaway view that generally uses, its integral device mainly comprises quartzy bowl lid 12 and 13 3 main bodys of loam cake that are located at chamber 11 opening parts for the chamber 11 of inserting wafer 40, lid; Wherein, be provided with in the chamber 11 in order to carrying wafer 40, and hold me and install 20 with negative electrode continues, its loam cake 12 then is to be arranged with the radio-frequency coil 14 that becomes positive electrode, the below of its bogey 20 is to be provided with wafer elevator group 30 in order to will being loaded with holding me and installing 20 and drop to and carry out etching in the chamber 11 of wafer 40, and ejects axle 32 in order to the wafer that the wafer 40 that will finish etching and processing ejects bogey 20.
When actual operation, be wafer to be processed 40 to be placed on the bogey 20 really by mechanical arm, really chamber 11 is sealed by quartzy bowl lid 12 and loam cake 13, and the air of chamber 11 inside extracted out so that inject argon gas, under radio-frequency coil 14 energising effects, argon gas is dissociated becomes the electricity slurry of positively charged, and 20 liters of the bogeys that will be loaded with wafer 40 when wafer elevator group 30 are lifted near the electricity slurry zone of radio-frequency coil 14 time, the electricity slurry can be had holding of negative electricity by wafer 40 belows and cut a device 20 and attract, positively charged ion is attracted by negative electrode and quickens to advance and can strike crystal column surface with vertical angle to cathode direction, so that wafer 40 surface oxide layers are removed, obtain a clean and bright surface.
Moreover, the structure of bogey 20 is formed as shown in Figures 2 and 3 altogether, basically be to be provided with first metal dish 21 on main lifting shaft 31 tops of wafer elevator group 30, be provided with a quartz disk 22 in first metal dish 21, be provided with one second metal dish 23 in quartz disk 22 again, utilizing first metal dish 21 that quartz disk 22 is supported, and surround by the periphery of quartz disk 22 with second crown cap 23; In addition, card at first metal dish 21, quartz disk 22 and second metal dish 23 is provided with perforation 27, its perforation 27 is to use wafer for wafer elevator group 30 to eject axle 32 to pass through, and holds me and installs 20 so that wafer 40 ejected, to meet the demand of self-service equalization.
Yet, though both sizes of second metal dish 23 and wafer 40 are close, in fact the diameter of second metal dish 23 is the 30cm that are slightly less than wafer 40 for 29.746cm, therefore move when slightly error being arranged if place the mechanical arm of wafer 40, promptly cause second metal dish 23 to expose easily, add, when carrying out crystal round etching, its electricity slurry ion can have the chemical bond that enough kinetic energy is pulled apart film because of acceleration, and then with the crystal column surface material molecules one by one strike or splash out, and second metal dish 23 that it exposes will be subjected to the strike effect of electricity slurry and splash to around quartz disk 22, and then cause the damage of quartz disk 22, and the stability of back bias voltage also can be damaged, and influenced to the rotten dish 23 of second gold medal, and this measure also is to cause the bad main cause of the product circular surfaces etching uniformity.
The utility model content
The purpose of this utility model aims to provide a replaceable original member, and effectively reduces the wafer bearing device that damaged by the electricity slurry.
The wafer bearing device of the utility model crystal round etching equipment, be to be provided with one first insulating disc on the main lifting shaft top of wafer elevator group, be provided with a metal support disk in the top of first insulating disc, be provided with one second insulating disc again in the top of metal support disk, other has a bolt in order to second insulating disc, metal support disk, first insulating disc is locked go back to the top at main lifting shaft, and the electrode of conducting metal support disk, by second insulating disc that metal support disk is topped to being unlikely the structure kenel that exceeds wafer periphery, avoiding metal support disk to be subjected to the electricity slurry hits, to guarantee second insulating disc, the integrality of metal support disk, and make back bias voltage stable.
Description of drawings
Fig. 1 is a structure cutaway view of commonly using crystal round etching equipment;
Fig. 2 is the STRUCTURE DECOMPOSITION figure that commonly uses crystal round etching equipment;
Fig. 3 is that the knot of commonly using wafer bearing device is analysed and observe and separated figure;
Fig. 4 is the wafer bearing device stereoscopic figure of the utility model first embodiment;
Fig. 5 is that the wafer bearing device of the utility model first embodiment uses the configuration status cutaway view;
Fig. 6 is the wafer bearing device STRUCTURE DECOMPOSITION figure of the utility model first embodiment;
Fig. 7 is the wafer bearing device structure cutaway view of the utility model first embodiment;
Fig. 8 is the view that ejects of the wafer of the utility model first embodiment;
Fig. 9 is the wafer bearing device structure cutaway view of the utility model first embodiment;
Figure 10 is the wafer bearing device structure cutaway view of the utility model first embodiment.
[figure number explanation]
11 chambers, 251 classes
12 quartzy bowl lid 26 second insulating discs
13 loam cakes, 261 protruding lips
27 perforation of 14 radio-frequency coils
20 bogeys, 28 bolts
21 first metal dish, 30 wafer elevator group
22 quartz disks, 31 main lifting shafts
23 second metal dish, 32 wafers eject axle
24 first insulating discs, 40 wafers
25 metal support disk, 50 mechanical arms
Embodiment
For the clear structure of the present utility model of your auditor is formed, and the overall operation mode, cooperate graphic being described as follows now:
The wafer bearing device of the utility model crystal round etching equipment, its whole etching machines is in order to carry out universe formula etching (being called electric oar etching again) operation, as Fig. 4 and shown in Figure 5, mainly be to comprise quartzy bowl lid 12 and the loam cake 13 that is located at chamber 11 opening parts for the chamber 11 of inserting wafer 40, lid; As for 20 of bogeys is to be provided in the chamber 11, except the carrying of wafer 40 is done in confession, also hold concurrently and bear the effect that continues with negative electrode, its loam cake 12 then is to be arranged with the radio-frequency coil 14 that becomes positive electrode, the below of its bogey 20 is to be provided with wafer elevator group 30 to drop to the chamber in order to the bogey 20 that will be loaded with wafer 40 and stop up and carry out etching in 11, and ejects in order to the wafer 40 that will finish etching and processing and to hold the wafer that cuts device 20 and eject axle 32.
Please cooperate three to shine Fig. 6 simultaneously to shown in Figure 8, bogey 20 of the present utility model mainly is to be provided with one on main lifting shaft 31 tops of wafer elevator group 30 by the first made insulating disc 24 of ceramic material, be provided with one by the made metal support disk 25 of quartzy material in the top of first insulating disc 24, be provided with one again in the top of metal support disk 25 by the second made insulating disc 26 of quartzy material, other has a bolt 28 in order to second insulating disc 26, metal support disk 25,24 lockings of first insulating disc are on the top of main lifting shaft 31, and the electrode of conducting metal support disk 25.
Especially, second insulating disc 26 is that metal support disk 25 is covered to being unlikely the structure kenel that exceeds wafer 40 peripheries, and tool first insulating disc 24, metal support disk 25 are to conform to existing facility specification with the height of second insulating disc 26, and alternative original member, and when actual operation, effectively avoid metal support disk 25 to be subjected to the electricity slurry and hit, can guarantee the integrality of second insulating disc 26.
In the present embodiment, second insulating disc 36 is to be a circular structural feature, and its lateral margin towards under be bent with protruding lip 261, its metal support disk 25 then is to be loaded with the class 251 that imbeds for second insulating disc 26 at peripheral region, can obtain one and can cut a framework for wafer 40 firm holding of placing; In addition, be provided with a plurality of perforation 27 at metal support disk 25 places, be beneficial to respectively bore a hole 27 places wear in order to the wafer that wafer 40 is ejected bogey 20 eject the axle 32, and can be after finishing the crystal round etching operation, seeing through wafer ejects axle 32 wafer 40 is ejected bogey 20, making things convenient for mechanical arm 50 that wafer 40 is shifted out, and more meet the demand of automation processing operation in equipment.
Moreover, as shown in Figure 9, second insulating disc 26 of the present utility model is to be a disc-shaped structure body that fully metal support disk 25 is covered, and its lateral margin towards under be bent with protruding lip 261, can firmly place for wafer 40 and constitute one equally, and effectively avoid metal support disk 25 to be subjected to the carrying framework that electric oar hits; Certainly, in the embodiment shown in fig. 9, metal support disk 25 and second insulating disc, 26 places are provided with a plurality of perforation 27, be beneficial to respectively bore a hole 27 places wear in order to the wafer that wafer 40 is ejected bogey 20 eject the axle 32, and can be after finishing the crystal round etching operation, see through wafer and eject axle 32 wafer 40 is ejected bogey 20, can meet the demand of automation processing operation equally.
In addition, as shown in Figure 7, cause is to conform to existing facility specification with first insulating disc 24, metal support disk 25 with the height of second insulating disc 26, and main lifting shaft 31 tops are one the protuberance of class 251 to be arranged, so its first insulating disc 24 for lateral margin towards being bent with the discoid of protruding lip 261 down, fasten with the protuberance on top on this and the main lifting shaft 3, or can be as shown in Figure 9, its first insulating disc 24 is discoid for no protruding lip, gets final product with bolt 28 and main lifting shaft 31 lockings.
As mentioned above, the utility model provides crystal round etching equipment another preferable feasible wafer bearing device, so, offer the application of utility model patent in accordance with the law; Yet; above implementation and graphic shown in; it is one of the utility model preferred embodiment; be not to limit to the utility model with this; therefore; all all and the utility model structure, device, feature etc. are approximate, identical, all should belong within the protection range of founding purpose and applying for a patent of the present utility model.

Claims (12)

1, a kind of wafer bearing device of crystal round etching equipment is characterized in that: include:
One first insulating disc is located at the top of a main lifting shaft;
One metal support disk is located at the top of first insulating disc;
One second insulating disc is located at the top of metal support disk, and metal support disk is covered, and makes golden rotten supporting disk not exceed the structure kenel of wafer periphery.
2, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this second insulating disc, this metal support disk, this first insulating disc are to be locked on the top of this main lifting shaft by a bolt, and the electrode of conducting metal support disk.
3, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this second insulating disc is to be a discoid structural feature.
4, the wafer bearing device of crystal round etching equipment as claimed in claim 3 is characterized in that: this metal support disk and this second insulating disc are to be provided with a plurality of perforation, hold the wafer that cuts device and eject axle in respectively should perforation place being equipped with in order to wafer is ejected.
5, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this second insulating disc is to be a circular structural feature, and this metal support disk is to be provided with the class that imbeds for second insulating disc at peripheral region.
6, the wafer bearing device of crystal round etching equipment as claimed in claim 5 is characterized in that: this metal support disk is to be provided with a plurality of perforation, ejects axle in the wafer that respectively should perforation place be equipped with in order to wafer is ejected bogey.
7, as the wafer bearing device of claim 3 or 5 described crystal round etching equipment, it is characterized in that: the lateral margin of this second insulating disc be towards under be bent with protruding lip.
8, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this first insulating disc is to be a discoid structural feature, wherein, the lateral margin of this first insulating disc be towards under be bent with protruding lip.
9, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this first insulating disc is to be a discoid structural feature.
10, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this second insulating disc is made of quartzy material.
11, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this first insulating disc is made of ceramic material.
12, the wafer bearing device of crystal round etching equipment as claimed in claim 1 is characterized in that: this metal support disk is made by stainless steel.
CN 200420093269 2004-09-14 2004-09-14 Wafer bearing device for wafer etching equipment Expired - Fee Related CN2758971Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200420093269 CN2758971Y (en) 2004-09-14 2004-09-14 Wafer bearing device for wafer etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200420093269 CN2758971Y (en) 2004-09-14 2004-09-14 Wafer bearing device for wafer etching equipment

Publications (1)

Publication Number Publication Date
CN2758971Y true CN2758971Y (en) 2006-02-15

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Family Applications (1)

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Country Status (1)

Country Link
CN (1) CN2758971Y (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101225550B (en) * 2007-01-15 2010-05-19 中芯国际集成电路制造(上海)有限公司 Method for improving wafer defect
CN102177571A (en) * 2008-10-07 2011-09-07 应用材料公司 Apparatus for efficient removal of halogen residues from etched substrates
CN102477585A (en) * 2010-11-25 2012-05-30 志圣科技(广州)有限公司 Plasma etching equipment, wafer jig and method for arranging wafer
CN103094166A (en) * 2011-10-31 2013-05-08 北京北方微电子基地设备工艺研究中心有限责任公司 Wafer carrying device and semiconductor processing equipment comprising the same
CN104241175A (en) * 2013-06-24 2014-12-24 马悦 Semiconductor device substrate loading device
CN104625941A (en) * 2013-11-14 2015-05-20 盛美半导体设备(上海)有限公司 Wafer processing device
CN105632862A (en) * 2014-11-21 2016-06-01 系统科技公司 Substrate treating apparatus having vortex prevention chamber and substrate treating method
CN107464764A (en) * 2016-06-06 2017-12-12 北京北方华创微电子装备有限公司 A kind of bogey and pre-cleaning cavity
CN110004424A (en) * 2018-01-05 2019-07-12 友威科技股份有限公司 Continuous coating apparatus
CN111326438A (en) * 2018-12-14 2020-06-23 北京北方华创微电子装备有限公司 Leveling device and reaction chamber

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101225550B (en) * 2007-01-15 2010-05-19 中芯国际集成电路制造(上海)有限公司 Method for improving wafer defect
CN102177571A (en) * 2008-10-07 2011-09-07 应用材料公司 Apparatus for efficient removal of halogen residues from etched substrates
CN103346116B (en) * 2008-10-07 2016-01-13 应用材料公司 For effectively removing the equipment of halogen residues from etching substrates
US8486194B2 (en) 2008-10-07 2013-07-16 Applied Materials, Inc. Apparatus for efficient removal of halogen residues from etched substrates
CN103346116A (en) * 2008-10-07 2013-10-09 应用材料公司 Apparatus for efficient removal of halogen residues from etched substrates
CN102477585A (en) * 2010-11-25 2012-05-30 志圣科技(广州)有限公司 Plasma etching equipment, wafer jig and method for arranging wafer
CN102477585B (en) * 2010-11-25 2014-06-25 志圣科技(广州)有限公司 Plasma etching equipment, wafer jig and method for arranging wafer
CN103094166B (en) * 2011-10-31 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 Wafer carrying device and semiconductor processing equipment comprising the same
CN103094166A (en) * 2011-10-31 2013-05-08 北京北方微电子基地设备工艺研究中心有限责任公司 Wafer carrying device and semiconductor processing equipment comprising the same
CN104241175A (en) * 2013-06-24 2014-12-24 马悦 Semiconductor device substrate loading device
CN104625941A (en) * 2013-11-14 2015-05-20 盛美半导体设备(上海)有限公司 Wafer processing device
CN105632862A (en) * 2014-11-21 2016-06-01 系统科技公司 Substrate treating apparatus having vortex prevention chamber and substrate treating method
CN107464764A (en) * 2016-06-06 2017-12-12 北京北方华创微电子装备有限公司 A kind of bogey and pre-cleaning cavity
CN107464764B (en) * 2016-06-06 2020-01-03 北京北方华创微电子装备有限公司 Bearing device and pre-cleaning chamber
CN110004424A (en) * 2018-01-05 2019-07-12 友威科技股份有限公司 Continuous coating apparatus
CN110004424B (en) * 2018-01-05 2020-12-22 友威科技股份有限公司 Continuous coating device
CN111326438A (en) * 2018-12-14 2020-06-23 北京北方华创微电子装备有限公司 Leveling device and reaction chamber

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060215

Termination date: 20130914