CN1638084A - Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof - Google Patents
Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof Download PDFInfo
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- CN1638084A CN1638084A CN 200410090840 CN200410090840A CN1638084A CN 1638084 A CN1638084 A CN 1638084A CN 200410090840 CN200410090840 CN 200410090840 CN 200410090840 A CN200410090840 A CN 200410090840A CN 1638084 A CN1638084 A CN 1638084A
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Abstract
Disclosed are an electrostatic chuck making point-contact with a substrate using a plurality of support balls to minimize a contact area for preventing contact damage of a semiconductor substrate, a substrate support, a clamp for substrate fixation, and a fabrication method thereof. In addition, disclosed are a structure of electrode used an upper electrode or a lower electrode provided in a plasma processing apparatus and a fabrication method thereof.
Description
Technical field
The present invention relates to a kind of electrostatic chuck (electrostatic chuck), it carries out contacting with substrate (substrate): use a plurality of support balls so that contact area is minimum and prevent that the contact of semiconductor chip from damaging; A kind of substrate support; A kind of fixing anchor clamps of substrate that are used for; With and manufacture method.
In addition, a kind of structure and manufacture method thereof of the electrode that provides in apparatus for processing plasma are provided, more specifically, relate to a kind of like this electrode, it is used to prevent the high frequency power loss and by the uniform plasma of following formation: the metal level that metal level on the general area between formation electrode matrix material and the insulating barrier or formation have the given shape between described electrode matrix material and the described insulating barrier, with and manufacture method.
Background technology
In the last few years, produced when patterned semiconductor substrate in the semiconductor dry etch process improving pressing for of positioning accuracy.Electrostatic chuck is a kind ofly to be used to use electrostatic force to improve the device of described positioning accuracy.
The example of conventional electrostatic chuck is disclosed among the open No.2002-70340 of the Japan Patent that is entitled as " Electrostatic Chuck memberand Fabrication Method thereof ".As shown in fig. 1, disclosed electrostatic chuck assembly comprises: priming coat 2, and it is made and is formed on by metal level at least one surface of matrix; Following insulating barrier 3, it is by Al
2O
3Pottery is made and is formed on the priming coat 2; Metal electrode layer 4, it is formed on down on the insulating barrier; And go up insulating barrier 5, it is by Al
2O
3Pottery is made and is formed on the metal electrode layer as top coat.
Yet this conventional electrostatic chuck has such shortcoming: when this electrostatic chuck contacts with substrate 10 on substrate 10 particle appears, and, when the general surface of substrate contacts with electrostatic chuck, have the difficulty of keeping substrate evenness aspect.Therefore, the problem that is produced is when making substrate, is difficult to the structure evenness of the surperficial and assurance substrate of treatment substrate equably.
In addition, when electrostatic chuck contacted with substrate, another problem that is produced was when substrate is carried out etch processes or deposition processes, was difficult to guarantee the uniformity such as the treatment conditions of temperature and pressure.
As another example of conventional electrostatic chuck, a kind of like this electrostatic chuck is arranged, wherein the contact plane between electrostatic chuck and the substrate by embossing to reduce the area of contact plane.
Yet in the case, existing problem is to be difficult to prepare and large-scale production embossing plane.In addition, exist occurring particle on the substrate and, and exist life-span on embossing plane short and so make the big problem of cost of electrostatic chuck because the wearing and tearing that the contact on embossing plane causes cause damaging the worry of substrate.
In addition, the problems referred to above of conventional electrostatic chuck are checked the substrate support of substrate and are used to catch the anchor clamps of substrate also be real for being used to.
Above-mentioned apparatus for processing plasma comprises bottom electrode and top electrode.
Fig. 2 is a sectional drawing, and its explanation is as the structure of the electrode of the upper and lower electrode that provides in apparatus for processing plasma.As shown in Figure 2, conventional electrodes comprises basis material 4a that is formed electrode body and the insulating barrier 4b that is formed on the basis material 4a.At this, basis material 4a normally forms by aluminium (Al) processed, and insulating barrier 4b is formed on the basis material 4a then.
Yet because the aluminium that is used to basis material 4a has soft, the surface of the basis material 4a that forms by machining is very coarse.That is to say that a large amount of projectioies with 1.6 to 0.8um sizes are formed on the surface of basis material.Therefore, according to the power characteristic of the high-frequency signal of propagating along conductive surface, the roughness of conductive surface or inhomogeneities have a significant impact the power transmission of high-frequency signal, and this can cause the power loss of high-frequency signal.In addition, the power loss during the power transmission of high-frequency signal is handled is converted into heat energy, and this causes the increase of electrode temperature.
Therefore, conventional electrodes has following problem: the increase of the power loss of high-frequency signal, the electrode temperature that causes owing to power loss and increase the electrode damage that causes owing to electrode temperature.
In addition, recently, along with the change of the substrate of being handled by apparatus for processing plasma is big, such problem has appearred: because the inhomogeneities of the density of the plasma that produces in apparatus for processing plasma causes the different piece of substrate to experience different degree of treatments.Because the power of high-frequency signal is not imposed on conventional electrodes equably, plasma can not be produced equably.Also have,, the problem of the inhomogeneities of the etching of pending substrate or deposition occurred along with the increase of electrode area and the therefore increase of the difference on the uniformity of the core of electrode and the plasma between the marginal portion.
Summary of the invention
Consider the problems referred to above, the purpose of this invention is to provide a kind of electrostatic chuck, uniformity and process uniformity that it can prevent the damage of the appearance of particle on the substrate and substrate and guarantee substrate temperature and pressure in the processing that comprises etching, deposition etc.
Another object of the present invention provides the electrostatic chuck and the manufacture method thereof in a kind of life-span that has the stability of function and manufacturing and prolong.
Another purpose of the present invention provides a kind of substrate support and manufacture method thereof that can prevent damaged substrate and distortion and make the appearance minimum of particle.
Another purpose of the present invention provides a kind of anchor clamps, and it can prevent the appearance of the damage of substrate and particle and alleviate impact to substrate.
Another purpose of the present invention provides a kind of electrode structure, and it can prevent the power loss of high-frequency signal.
According to one aspect of the present invention, above and other purpose can realize that this electrostatic chuck comprises by a kind of electrostatic chuck is provided: supporting assembly, and its top surface is flat, and has electrode bar; Following insulating barrier, the insulating material that applies on its top surface by supporting assembly forms; A plurality of electrode patterns, it is attached to down insulating barrier and is electrically connected on electrode bar; Last insulating barrier, it is formed by the insulating material that applies on the electrode pattern; Knot (junction) layer, it is formed by the knot material that applies on the last insulating barrier; And a plurality of support balls, it is arranged at predetermined form that the knot layer is gone up and is combined and be fixed in the knot layer.
According to another aspect of the present invention, above and other purpose can realize that this substrate support comprises by a kind of substrate support is provided: supporting assembly, and its top surface is flat; Insulating barrier, the insulating material that applies on its top surface by supporting assembly forms; The knot layer, it is formed by the knot material that applies on the insulating barrier; And a plurality of support balls, it is arranged at the knot layer with predetermined form and goes up and be incorporated into the knot layer.Preferably, damping layer (damper) is attached on the insulating barrier and ties layer and formed by the knot material that applies on the damping layer.
According to another aspect of the present invention, above and other purpose can realize by a kind of method that is used to make the substrate support is provided, this method may further comprise the steps: form insulating barrier by be coated with coating insulation material on supporting assembly, the top surface of described supporting assembly is flat; Form the knot layer by coating knot material on insulating barrier; And on the knot layer, arrange a plurality of support balls and be attached to layer with predetermined form.
According to another aspect of the present invention, above and other purpose can realize that these anchor clamps comprise by a kind of fixing anchor clamps of substrate that are used for are provided: damping layer, and it is attached to the substrate fixation kit of anchor clamps; The knot layer, it is formed by the knot material that applies on the damping layer; And a plurality of support balls, it is arranged at the knot layer with predetermined form and goes up and be incorporated into the knot layer.
According to another aspect of the present invention, above and other purpose can be used to make the method that is used for the fixing anchor clamps of substrate and realizes that this method may further comprise the steps by providing a kind of: the substrate fixation kit that damping layer is attached to anchor clamps; Form the knot layer by coating knot material on damping layer; And on the knot layer, arrange a plurality of support balls and support ball is attached to layer with predetermined form.
According to another aspect of the present invention, above and other purpose can realize by a kind of method that is used to make electrostatic chuck is provided, this method may further comprise the steps: by be coated with on the supporting assembly coating insulation material form under insulating barrier, the top surface of described supporting assembly is flat, and has electrode bar; A plurality of electrode patterns are attached to down insulating barrier and should be electrically connected on electrode bar by a plurality of electrode patterns; By forming insulating barrier being coated with coating insulation material on the electrode pattern; Form the knot layer by coating knot material on last insulating barrier; And on the knot layer, arrange a plurality of support balls and support ball is attached to layer with predetermined form.
According to another aspect of the present invention, above and other purpose can be used to top electrode in the apparatus for processing plasma or the electrode structure of bottom electrode realizes that this electrode structure comprises: basis material by providing a kind of; The metal level that on basis material, forms; And the insulating barrier that on metal level, forms.Preferably, described electrode structure further is included in the bonding material layer that forms between basis material and the metal level.
According to another aspect of the present invention, above and other purpose can realize by a kind of method that is used to make electrode is provided, this electrode is used to top electrode or the bottom electrode in the apparatus for processing plasma, said method comprising the steps of: prepare to be used to form the electrode body basis material; On basis material, form metal level; And on metal level, form insulating barrier.
Description of drawings
From the following detailed description that carries out in conjunction with the accompanying drawings, above and other purpose of the present invention, characteristics and other advantage will more be expressly understood, in the accompanying drawings:
Fig. 1 is the concept map of the conventional electrostatic chuck of explanation;
Fig. 2 is the sectional drawing of the electrode structure in the conventional apparatus for processing plasma of explanation;
Fig. 3 is the sectional drawing of explanation according to electrostatic chuck of the present invention;
Fig. 4 is the sectional drawing that explanation is supported according to substrate of the present invention;
Fig. 5 is the schematic partial sectional view of explanation according to anchor clamps of the present invention;
Fig. 6 is the sectional drawing of explanation according to the electrode structure in the apparatus for processing plasma of the present invention;
Fig. 7 is the sectional drawing of explanation according to another electrode structure in the apparatus for processing plasma of the present invention; And
Fig. 8 is the flow chart of the method for the explanation electrode that is used for making apparatus for processing plasma according to the present invention.
Embodiment
Hereinafter with reference to accompanying drawing the preferred embodiments of the present invention are being described.
With reference to figure 3, comprise according to the electrostatic chuck 100 of the embodiment of the invention: supporting assembly 101; Following insulating barrier 110, its insulating material by coating on the supporting assembly 101 forms; A plurality of electrode patterns, it is attached to down insulating barrier 110; Last insulating barrier 130, it is formed by the insulating material that applies on the electrode pattern; The knot layer, its knot material by coating on the last insulating barrier 130 forms; A plurality of support balls, it is arranged and is attached to layer 140; And a plurality of leakages prevent dam 160, and it is arranged between described a plurality of support ball regularly.
The hole that supporting assembly 101 has flat top surface and forms at the upper and lower side place at the center of supporting assembly 101.Electrode bar 103 is inserted in the described hole, is used for voltage is imposed on the electrode pattern of describing afterwards.On the other hand, each all is provided on the supporting assembly 101 by a plurality of helium paths 105 that the dovetail groove of reversing is formed.Helium path 105 is as the transmission path of helium.
Following insulating barrier 110 is formed on the supporting assembly 101 and by Al
2O
3Make.The thickness of following insulating barrier 110 is uniform in 100 to 400um scope.
Leakage prevents that dam 160 is with the even fixed interval ground arrangement between described a plurality of support balls 150, and be used for preventing maintaining steady temperature and constant pressure from the leakage of the helium of helium path 105 dischargings and with the overall bottom of substrate, this is to be undertaken by the entrance and exit that interrupts heat.
On the other hand, connection container 107 is connected to each helium path 105 of supporting assembly 101 and arrives the top surface of tying layer 140 through said elements from helium path 105.In addition, from outside sealing, described stopper has the hole that is formed centrally therein and support and is inserted in connection container 107 in this hole by stopper 109 on the top of helium path 105.
To operation as the electrostatic chuck of above structure be described according to embodiments of the invention following.
At first, substrate 10 is placed on a plurality of support balls 150, and the helium of steady temperature and constant pressure is discharged in the space simultaneously, and in this space, a plurality of support balls 150 are arranged the helium path 105 through supporting 101.Afterwards, voltage is applied in to the electrode bar 103 of supporting assembly 101 and therefore is applied in to connected a plurality of electrode patterns 120, and is applied in to substrate 10 with being applied in to the different voltage of the voltage of electrode bar 103.Therefore, substrate 10 is fixed on a plurality of support balls 150 by an electric power (electrical force), and described electric power produces by being applied in to the voltage of electrode bar 103 and being applied in to the difference between the voltage of substrate 10.Therefore, when substrate 10 and a plurality of support balls 150 carried out contacting, the appearance of particle can be prevented from the damage of substrate and the substrate.On the other hand, by helium path 105 upwards the helium of discharging be distributed evenly on the bottom of substrate 10 so that be suitable for the temperature and pressure of treatment substrate 10 and kept consistently.Because the leakage that is arranged in regularly between the support ball 150 prevents dam 160, helium is not leaked out.
On the other hand, in the processing of using plasma source, can improve dielectric constant by coating aluminium oxide on the topmost portion of the electrostatic chuck 100 that comprises knot layer 140 or binding agent 141 and support ball 150.
Next, describe substrate support in detail with reference to Fig. 4 according to another embodiment of the present invention.
As shown in Figure 4, substrate support 200 comprises supporting assembly 201, be attached to the insulating barrier 210 of supporting assembly 201, by the knot layer 240 that forms of knot material of coating on insulating barrier 210, and a plurality of support balls 250 of on knot layer 240, arranging and be incorporated into knot layers 240.
Supporting assembly 201 has flat top surface.
Insulating barrier 210 is formed on the supporting assembly 201 and by Al
2O
3Make.The thickness of insulating barrier 210 is uniform in 100 to 400um scope.
Supporting that as the substrate of above structure substrate 10 is placed on a plurality of support balls 250 by this way in 200, promptly it is contacted by a plurality of points on a plurality of support balls and supports.Therefore, the appearance of particle can be prevented from the damage of substrate and the substrate.
Next, describe anchor clamps in detail with reference to Fig. 5 according to another embodiment of the present invention.
As illustrate as shown in Fig. 5 of schematic partial sectional view of anchor clamps 300, anchor clamps 300 comprise: catch (grip) assembly 301, be used to catch substrate 10; Do not have (shockless) damping layer 370 of impact, it is attached to the bottom of catching assembly 301; Knot layer 340, it is formed by the knot material that applies on damping layer 370 bottoms; A plurality of support balls 350, it is arranged on the bottom of tying layer 340 and is incorporated into knot layer 340; And the binding agent 341 that separates, it is applied on the side part of support ball 350.In this description, for for purpose of brevity, the explanation of the part of describing in conjunction with electrostatic chuck 100 or substrate support 200 will be omitted.
The end portion of catching assembly 301 to be formed on to be used for anchor clamps 300 is to catch substrate 10.
Damping layer 370 is attached on the bottom of catching assembly 301 so that alleviate impact to substrate 10, and is made by the conventional general material such as rubber that can be used for damping.
By as the anchor clamps 300 of above structure, when substrate of being caught by anchor clamps 300 10 and support ball 350 carried out contacting, the damage of substrate 10 can be prevented from.In addition, when substrate 10 is caught by anchor clamps 300, can move by the damping of damping layer 370 to the impact of substrate 10 and to alleviate.
Next, with reference to Fig. 6 the structure as the electrode of top electrode in the apparatus for processing plasma or bottom electrode treated according to another embodiment of the present invention is described.
As shown in Figure 6, described electrode comprises basis material 121, metal level and insulating barrier 123.
Be used to make in the apparatus for processing plasma of flat-panel monitor substrate, basis material 121 forms electrode body and has rectangular shape usually.Basis material 121 is made by conductive metal, is preferably aluminium (Al) alloy, and the power of high-frequency signal can impose on it.That is to say, preferably by using machining process to come the surface of complanation aluminium alloy to form the rectangle basis material.
In addition, metal level 125 is formed on the basis material 121.Metal level 125 is preferably made by one of gold (Au), silver (Ag), nickel (Ni), chromium (Cr) and copper (Cu), and it has than the better conductivity of the metal that is used as basis material 121.That is to say that the path that the power of high-frequency signal can easily be transmitted is to form by be formed on the metal level that is better than basis material 121 on the conductivity on basis material 121.Basis material 121 has rough surface, and this is to be machined because of this surface, and compares with basis material 121, and metal level 125 has very flat and smooth surface, and this is to form by coating because of it.Therefore, the power of high-frequency signal can be transmitted the loss that does not have high-frequency signal power by metal level.
In addition, although metal level 125 can be formed on the whole surface of basis material 121, also might only on the specific region of the top surface of basis material 121, form metal level 125: use photoetching (photolithography) to handle and form specific pattern mask and in described pattern mask, form metal level by using metal deposition process or coating to handle by following with given shape.Therefore, plasma density can optionally be improved at the desired region place.In other words, at the apparatus for processing plasma that is used for handling big substrate, the difference on the plasma uniformity between the center of electrode, side and the edge can be by forming metal level 125 with specific pattern and significantly reducing on the described side of electrode and edge.
Therefore, owing to can be formed for only in the specific region, optionally increasing the electrode of plasma density, can provide the apparatus for processing plasma that is suitable for handling big substrate.
In addition, as shown in Figure 7, preferably provide the binding material 127 between metal level 125 and the basis material 121 so that metal level 125 is attached to basis material 121 more strongly.
In addition, insulating barrier 123 is formed on the metal level 125 with protection basis material 121 and metal level 125 and with them and external isolation.Generally speaking, insulating barrier 123 forms by using anodization process.
The method that is used to make electrode according to another embodiment of the present invention is being described hereinafter with reference to Fig. 8.
At first carry out the basis material preparation process, it is called as the step that basis material 121 is processed into the shape of electrode itself.Generally speaking, owing to use the flat panel display manufacturing apparatus of plasma gas to have rectangular electrode, generally basis material 121 is processed into rectangular shape.In the case, basis material 121 is made by aluminium alloy, and its surface processes by machining process.Therefore, consider the soft of aluminium alloy, aluminium alloy has obviously coarse surface.
After the basis material preparation process, carry out metal level and form step, be used on basis material 121, forming metal level 125.Preferably, formation for example has the metal level 125 of about 2um to the very minimal thickness of 30um on basis material 121.In the case, metal level 125 can use electro-plating method or ion plating method to form, and perhaps replacedly uses other method, comprises spraying method, vacuum evaporation processing (for example sputtering method, chemical evaporation method) etc.
In addition, the method that is used to make electrode according to embodiments of the invention can comprise that binding material forms step, is used for forming binding material on basis material 121 before forming metal level 125, thereby makes metal level 125 be attached to basis material 121 more strongly.
In addition, before metal level forms step, can further be included in the mask formation step of the specific pattern mask of formations on the basis material 121.At this, pattern mask is meant the pattern that forms with given shape on basis material 121, and purpose is to form metal level 125 with given shape.Can use photoresist (photoresist) to form this pattern mask.The reason of carrying out this step is that the plasma density in the specific region on the electrode can be by forming metal level 125 with given shape and optionally improving on the specific region.At this, can use photoetching treatment or replacedly, use the band that adopts mask tape (masking tape) to apply to handle (taping process) to form pattern mask.
Should point out, must remove pattern mask before insulating barrier 123 is formed after metal level 125 is formed.Therefore, when using pattern mask formation metal level 125, can form at metal level and further carry out the mask removal step of removing pattern mask between step and the insulating barrier formation step.
Carry out the insulating barrier formation step that is used on metal level 125, forming insulating barrier 123 at last.Insulating barrier typically uses coating method formation, particularly is anodization process or aluminium oxide (Al
2O
3) thermal spraying or method of evaporating.
As conspicuous from the above description, the invention provides a kind of electrostatic chuck, it can prevent the appearance of particle on the semiconductor chip and the damage of substrate, improves the dielectric constant of electrostatic chuck and guarantee the uniformity and the process uniformity of substrate temperature and pressure in the processing that comprises etching, deposition etc.; And provide the electrostatic chuck in a kind of life-span that has the stability of function and manufacturing and prolong.
In addition, the invention provides a kind of substrate support that can prevent damaged substrate and distortion and make particle appearance minimum.
In addition, the invention provides a kind of anchor clamps, it can prevent the appearance of particle on the damage of substrate and the substrate and alleviate impact to substrate.
In addition, the invention provides a kind of electrode, its can by mechanically and the interface between electricity ground stable metal layer and the basis material prevent the power loss of high-frequency signal, and therefore improve the transmission efficiency of high-frequency signal power.
In addition, the invention provides a kind of electrode, it can be convenient to the even transmission of high-frequency signal power and produce uniform plasma when this electrode is used as top electrode in the apparatus for processing plasma or bottom electrode.
In addition, the invention provides a kind of electrode, it can be by following and optionally improve plasma density and efficient: form specific patterned metal layer can be formed expectation with the electrode that is used in the high efficiency high frequency signal path shape.Particularly, can provide a kind of apparatus for processing plasma that is used to handle big substrate, it can overcome the core of electrode and the difference on the plasma uniformity between the side part.
Although disclose the preferred embodiments of the present invention for illustrative purposes, it will be apparent to one skilled in the art that as the various modifications, interpolation and the replacement that are disclosed in the spirit and scope of the present invention in the claims be possible.
Claims (31)
1. electrostatic chuck comprises:
Supporting assembly, its top surface is flat, and has electrode bar;
Following insulating barrier, the insulating material that applies on its top surface by supporting assembly forms;
A plurality of electrode patterns, it is attached to down insulating barrier and is electrically connected to electrode bar;
Last insulating barrier, it is formed by the insulating material that applies on the electrode pattern;
The knot layer, it is formed by the knot material that applies on the last insulating barrier; And
A plurality of support balls, it is arranged at predetermined form that the knot layer is gone up and is combined and be fixed to the knot layer.
2. electrostatic chuck as claimed in claim 1 further comprises:
A plurality of helium paths, it is formed on the supporting assembly;
A plurality of connection containers, it arrives the top surface of knot layer through described helium path; And
A plurality of stoppers, connection container is also supported in the top of its sealing helium path.
3. electrostatic chuck as claimed in claim 2 further comprises:
A plurality of leakages prevent the dam, and it is arranged in regularly that knot layer is gone up so that the temperature and pressure of the helium by the discharging of helium path distributes is uniform.
4. electrostatic chuck as claimed in claim 1, wherein aluminium oxide is applied on the topmost portion of electrostatic chuck.
5. substrate support comprises:
Supporting assembly, its top surface is flat;
Insulating barrier, the insulating material that applies on its top surface by supporting assembly forms;
The knot layer, it is formed by the knot material that applies on the insulating barrier; And
A plurality of support balls, it is arranged at the knot layer with predetermined form and goes up and be incorporated into the knot layer.
6. substrate support as claimed in claim 5, wherein damping layer is attached on the insulating barrier and ties layer and formed by the knot material that applies on the damping layer.
7. one kind is used for the fixing anchor clamps of substrate, comprising:
Damping layer, it is attached to the substrate fixation kit of anchor clamps;
The knot layer, it is formed by the knot material that applies on the damping layer; And
A plurality of support balls, it is arranged at the knot layer with predetermined form and goes up and be incorporated into the knot layer.
8. as any one the described electrostatic chuck in the claim 1 to 7, wherein support ball is made by dielectric.
9. as any one the described electrostatic chuck in the claim 1 to 7, wherein the knot layer forms by coating polyimide or epoxy.
10. method that is used to make electrostatic chuck may further comprise the steps:
By be coated with on the supporting assembly coating insulation material form under insulating barrier, the top surface of described supporting assembly is flat, and has electrode bar;
A plurality of electrode patterns are attached to down insulating barrier and should be electrically connected to electrode bar by a plurality of electrode patterns;
By forming insulating barrier being coated with coating insulation material on the electrode pattern;
Form the knot layer by coating knot material on last insulating barrier; And
On the knot layer, arrange a plurality of support balls and support ball is attached to layer with predetermined form.
11. method as claimed in claim 10 further may further comprise the steps:
On supporting assembly, form a plurality of helium paths;
Arrange a plurality of connection containers, it arrives the top surface of knot layer through described helium path; And
Arrange a plurality of stoppers, connection container is also supported in the top of its sealing helium path.
12. method as claimed in claim 11 further may further comprise the steps:
Arranging a plurality of leakages to prevent the dam regularly on knot layer, is uniform so that the temperature and pressure of the helium by the discharging of helium path distributes.
13. one kind is used to make the method that substrate is supported, may further comprise the steps:
Form insulating barrier by be coated with coating insulation material on supporting assembly, the top surface of described supporting assembly is flat;
Form the knot layer by coating knot material on insulating barrier; And
On the knot layer, arrange a plurality of support balls and be attached to layer with predetermined form.
14. one kind is used to make the method that is used for the fixing anchor clamps of substrate, may further comprise the steps:
Damping layer is attached to the substrate fixation kit that is used for the fixing anchor clamps of substrate;
Form the knot layer by coating knot material on damping layer; And
On the knot layer, arrange a plurality of support balls and support ball is attached to layer with predetermined form.
15. an electrode structure comprises:
Basis material;
The metal level that on basis material, forms; And
The insulating barrier that on metal level, forms.
16. electrode structure as claimed in claim 15 further comprises:
The bonding material layer that between basis material and metal level, forms.
17. electrode structure as claimed in claim 15, wherein basis material is made by aluminium (Al).
18. electrode structure as claimed in claim 15, wherein metal level is made by the metal that has than the better conductivity of material that is used as basis material.
19. electrode structure as claimed in claim 18, wherein said metal are one that selects from a group of being made up of gold (Au), silver (Ag), nickel (Ni), chromium (Cr) and copper (Cu).
20. electrode structure as claimed in claim 15, wherein metal level is formed to the thickness of 30um with 2um.
21. electrode structure as claimed in claim 15, wherein metal level is formed with specific pattern on the specific region of basis material.
22. a method that is used to make electrode may further comprise the steps:
Preparation is used to form the basis material of electrode body;
On basis material, form metal level; And
On metal level, form insulating barrier.
23. method as claimed in claim 22, the step that wherein forms metal level comprises that one of use plating processing, coating processing and vacuum evaporation processing form metal level.
24. method as claimed in claim 23, wherein the plating processing is electroplating processes or ion plating process.
25. method as claimed in claim 23, wherein the coating processing is a thermal spraying treatment.
26. method as claimed in claim 23, wherein the vacuum evaporation processing is that sputter process or chemical vaporization are handled.
27. method as claimed in claim 22, the step that wherein forms insulating barrier comprise that using coating to handle forms insulating barrier.
28. method as claimed in claim 22 further may further comprise the steps:
Before forming metal level, form pattern mask; And
After forming metal level, remove pattern mask.
29. method as claimed in claim 28, wherein pattern mask is to use photoetching treatment to form.
30. method as claimed in claim 28, wherein pattern mask is to be attached to basis material by the mask tape with reservation shape to form.
31. method as claimed in claim 22 further may further comprise the steps:
Before forming metal level, on basis material, form binding material.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0080414A KR100505512B1 (en) | 2003-11-14 | 2003-11-14 | Chuck table, support table and clamp using supporting ball and the methods thereof |
| KR1020030080414 | 2003-11-14 | ||
| KR1020030093791 | 2003-12-19 | ||
| KR1020030093791A KR100585032B1 (en) | 2003-12-19 | 2003-12-19 | Electrode of plasma processing apparatus and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1638084A true CN1638084A (en) | 2005-07-13 |
| CN100481366C CN100481366C (en) | 2009-04-22 |
Family
ID=34863600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100908408A Expired - Fee Related CN100481366C (en) | 2003-11-14 | 2004-11-12 | Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100481366C (en) |
| TW (1) | TWI274394B (en) |
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| CN101477962B (en) * | 2008-01-03 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck apparatus having connection layer and manufacturing process thereof |
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| CN103222043A (en) * | 2010-09-08 | 2013-07-24 | 恩特格林斯公司 | High conductivity electrostatic chuck |
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| CN104752118A (en) * | 2013-12-25 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber |
| TWI849454B (en) * | 2021-08-03 | 2024-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | Electrostatic chuck, manufacturing method, renovation method and plasma reaction device |
-
2004
- 2004-11-12 TW TW93134567A patent/TWI274394B/en not_active IP Right Cessation
- 2004-11-12 CN CNB2004100908408A patent/CN100481366C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100407397C (en) * | 2005-07-14 | 2008-07-30 | 东京毅力科创株式会社 | Static adsorption electrode, substrate processing device and production method of static adsorption electrode |
| CN101379607B (en) * | 2006-02-08 | 2010-04-21 | Toto株式会社 | Electrostatic chuck |
| CN101073897B (en) * | 2006-05-19 | 2012-02-22 | 爱德牌工程有限公司 | Embossing apparatus and method |
| CN101477962B (en) * | 2008-01-03 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck apparatus having connection layer and manufacturing process thereof |
| CN101677053A (en) * | 2008-09-19 | 2010-03-24 | Ips株式会社 | Electrostatic chuck and manufacturing method thereof |
| CN103222043A (en) * | 2010-09-08 | 2013-07-24 | 恩特格林斯公司 | High conductivity electrostatic chuck |
| CN103222043B (en) * | 2010-09-08 | 2016-10-12 | 恩特格林斯公司 | A kind of high conductivity electrostatic chuck |
| US9692325B2 (en) | 2010-09-08 | 2017-06-27 | Entegris, Inc. | High conductivity electrostatic chuck |
| CN104377105A (en) * | 2013-08-15 | 2015-02-25 | 中微半导体设备(上海)有限公司 | Plasma treatment device and helium gas pipe |
| CN104377105B (en) * | 2013-08-15 | 2017-02-08 | 中微半导体设备(上海)有限公司 | Plasma treatment device and helium gas pipe |
| CN104752118A (en) * | 2013-12-25 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber |
| TWI849454B (en) * | 2021-08-03 | 2024-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | Electrostatic chuck, manufacturing method, renovation method and plasma reaction device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100481366C (en) | 2009-04-22 |
| TW200520141A (en) | 2005-06-16 |
| TWI274394B (en) | 2007-02-21 |
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