CA2464423A1 - Electropolishing assembly and methods for electropolishing conductive layers - Google Patents
Electropolishing assembly and methods for electropolishing conductive layers Download PDFInfo
- Publication number
- CA2464423A1 CA2464423A1 CA002464423A CA2464423A CA2464423A1 CA 2464423 A1 CA2464423 A1 CA 2464423A1 CA 002464423 A CA002464423 A CA 002464423A CA 2464423 A CA2464423 A CA 2464423A CA 2464423 A1 CA2464423 A1 CA 2464423A1
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- nozzle
- electrolyte fluid
- fluid
- shroud
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 157
- 239000012530 fluid Substances 0.000 claims abstract description 252
- 239000003792 electrolyte Substances 0.000 claims abstract description 227
- 229910052751 metal Inorganic materials 0.000 claims description 160
- 239000002184 metal Substances 0.000 claims description 160
- 238000005498 polishing Methods 0.000 claims description 79
- 230000003287 optical effect Effects 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 51
- 229910021645 metal ion Inorganic materials 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000004033 plastic Substances 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 4
- 230000009972 noncorrosive effect Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 11
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 229920003051 synthetic elastomer Polymers 0.000 claims 1
- 239000005061 synthetic rubber Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 254
- 239000010408 film Substances 0.000 description 32
- 238000005259 measurement Methods 0.000 description 23
- 239000000835 fiber Substances 0.000 description 15
- 239000000523 sample Substances 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 239000012634 fragment Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- -1 polytetrafluoroethylene Polymers 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 9
- 229910001431 copper ion Inorganic materials 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 235000011007 phosphoric acid Nutrition 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000779 depleting effect Effects 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910020169 SiOa Inorganic materials 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Robotics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33241701P | 2001-11-13 | 2001-11-13 | |
| US60/332,417 | 2001-11-13 | ||
| US37256702P | 2002-04-14 | 2002-04-14 | |
| US60/372,567 | 2002-04-14 | ||
| PCT/US2002/036567 WO2003042433A1 (en) | 2001-11-13 | 2002-11-13 | Electropolishing assembly and methods for electropolishing conductive layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2464423A1 true CA2464423A1 (en) | 2003-05-22 |
Family
ID=26988208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002464423A Abandoned CA2464423A1 (en) | 2001-11-13 | 2002-11-13 | Electropolishing assembly and methods for electropolishing conductive layers |
Country Status (8)
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205166B2 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties |
| CA2491951A1 (en) * | 2002-07-22 | 2004-01-29 | Acm Research, Inc. | Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers |
| JP2005082843A (ja) * | 2003-09-05 | 2005-03-31 | Ebara Corp | 電解液管理方法及び管理装置 |
| JP2005120464A (ja) * | 2003-09-26 | 2005-05-12 | Ebara Corp | 電解加工装置及び電解加工方法 |
| US7224456B1 (en) * | 2004-06-02 | 2007-05-29 | Advanced Micro Devices, Inc. | In-situ defect monitor and control system for immersion medium in immersion lithography |
| WO2007035408A1 (en) * | 2005-09-19 | 2007-03-29 | Applied Materials, Inc. | Method for stabilized polishing process |
| US7837850B2 (en) * | 2005-09-28 | 2010-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating systems and methods |
| US20070181441A1 (en) * | 2005-10-14 | 2007-08-09 | Applied Materials, Inc. | Method and apparatus for electropolishing |
| JP5012252B2 (ja) | 2007-06-25 | 2012-08-29 | ヤマハ株式会社 | 磁気データ処理装置、方法およびプログラム |
| DE102007044091A1 (de) * | 2007-09-14 | 2009-03-19 | Extrude Hone Gmbh | Verfahren und Vorrichtung zur elektochemischen Bearbeitung |
| US8496511B2 (en) * | 2010-07-15 | 2013-07-30 | 3M Innovative Properties Company | Cathodically-protected pad conditioner and method of use |
| US9255339B2 (en) * | 2011-09-19 | 2016-02-09 | Fei Company | Localized, in-vacuum modification of small structures |
| KR101300325B1 (ko) * | 2011-12-21 | 2013-08-28 | 삼성전기주식회사 | 기판 도금 장치 및 그 제어 방법 |
| CN102601471B (zh) * | 2012-03-28 | 2013-07-24 | 华南理工大学 | 一种空间曲线啮合齿轮机构的精加工方法 |
| CN103590092B (zh) * | 2012-08-16 | 2017-05-10 | 盛美半导体设备（上海）有限公司 | 一种电化学抛光/电镀装置及方法 |
| TWI529893B (zh) * | 2012-09-01 | 2016-04-11 | 萬國半導體股份有限公司 | 帶有底部金屬基座的半導體器件及其製備方法 |
| JP6186499B2 (ja) * | 2013-05-09 | 2017-08-23 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | ウェハのメッキおよび／または研磨のための装置および方法 |
| CN105088328B (zh) * | 2014-05-07 | 2018-11-06 | 盛美半导体设备（上海）有限公司 | 电化学抛光供液装置 |
| TWI647343B (zh) * | 2014-05-16 | 2019-01-11 | 盛美半導體設備（上海）有限公司 | Apparatus and method for electroplating or electropolishing bracts |
| CN105316755B (zh) * | 2014-07-29 | 2019-06-25 | 盛美半导体设备（上海）有限公司 | 电化学抛光设备 |
| CN105312999A (zh) * | 2014-07-29 | 2016-02-10 | 盛美半导体设备（上海）有限公司 | 无应力抛光设备及其工艺腔体 |
| CN104241159B (zh) * | 2014-09-19 | 2018-04-03 | 中海阳能源集团股份有限公司 | 太阳能发电支架液体镀层及测量一体装置 |
| CN105448817B (zh) * | 2014-09-29 | 2020-05-19 | 盛美半导体设备(上海)股份有限公司 | 一种电化学抛光金属互连晶圆结构的方法 |
| CN106567130A (zh) * | 2015-10-10 | 2017-04-19 | 盛美半导体设备（上海）有限公司 | 一种改善晶圆粗糙度的方法 |
| CN105780101B (zh) * | 2016-01-27 | 2018-06-26 | 杨继芳 | 一种新型电解抛光设备 |
| CN105742213B (zh) * | 2016-03-07 | 2019-03-12 | 京东方科技集团股份有限公司 | 湿法刻蚀设备及湿法刻蚀方法 |
| WO2018093958A1 (en) * | 2016-11-15 | 2018-05-24 | Postprocess Technologies Inc. | Self-modifying process for rotational support structure removal in 3d printed parts using calibrated resonant frequency |
| CN106352782A (zh) * | 2016-11-24 | 2017-01-25 | 中国航空工业集团公司金城南京机电液压工程研究中心 | 一种高温电涡流传感器及制作方法 |
| CN106625033B (zh) * | 2016-12-09 | 2018-12-18 | 天津津航技术物理研究所 | 一种确定单点金刚石车削刀痕抛光去除特性的方法 |
| JP6431128B2 (ja) * | 2017-05-15 | 2018-11-28 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | ウェハのメッキおよび／または研磨のための装置および方法 |
| CN109423688B (zh) * | 2017-08-31 | 2022-03-22 | 深圳市水佳鑫科技有限公司 | 电化学处理液循环系统及设备 |
| CN111250805A (zh) * | 2020-03-20 | 2020-06-09 | 南京航空航天大学 | 金属粗糙表面的飞行式电解铣削整平方法 |
| CN111230727B (zh) * | 2020-03-28 | 2024-08-02 | 苏州赛森电子科技有限公司 | 一种真空镀膜工艺中硅片单面抛光装置及单面抛光方法 |
| US20230223301A1 (en) * | 2020-06-09 | 2023-07-13 | Acm Research (Shanghai), Inc. | Method of removing barrier layer |
| CN111958478B (zh) * | 2020-07-27 | 2024-06-18 | 浙江工业大学 | 基于氧化膜状态主动控制的轴承滚子elid研磨装置 |
| JP7678125B2 (ja) | 2021-03-04 | 2025-05-15 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨における絶縁流体ライン |
| CN114951858B (zh) * | 2022-05-17 | 2024-05-10 | 哈尔滨工业大学 | 一种光纤激光与管电极电解复合用光电液耦合装置 |
| GB202308117D0 (en) * | 2023-05-31 | 2023-07-12 | Holdson Ltd | System and method for electrolyte flow control in electrochemical polishing apparatus |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4304641A (en) * | 1980-11-24 | 1981-12-08 | International Business Machines Corporation | Rotary electroplating cell with controlled current distribution |
| DE4121032A1 (de) * | 1991-06-26 | 1993-01-07 | Schmid Gmbh & Co Geb | Vorrichtung zum behandeln von plattenfoermigen gegenstaenden, insbesondere leiterplatten |
| US5217586A (en) * | 1992-01-09 | 1993-06-08 | International Business Machines Corporation | Electrochemical tool for uniform metal removal during electropolishing |
| US5421987A (en) * | 1993-08-30 | 1995-06-06 | Tzanavaras; George | Precision high rate electroplating cell and method |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| US5843520A (en) * | 1997-01-13 | 1998-12-01 | Vanguard International Semiconductor Corporation | Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers |
| JPH10256450A (ja) * | 1997-03-12 | 1998-09-25 | Mitsubishi Electric Corp | リードフレームの加工装置および加工方法 |
| KR100271759B1 (ko) * | 1997-07-25 | 2000-12-01 | 윤종용 | 포토레지스트코팅장치및방법 |
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| US6395152B1 (en) * | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
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| JP2000087295A (ja) * | 1998-09-09 | 2000-03-28 | Matsushita Electronics Industry Corp | 電解メッキ方法、電解メッキ装置及び半導体装置の製造方法 |
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| US6582578B1 (en) * | 1999-04-08 | 2003-06-24 | Applied Materials, Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| US6444101B1 (en) * | 1999-11-12 | 2002-09-03 | Applied Materials, Inc. | Conductive biasing member for metal layering |
-
2002
- 2002-11-13 US US10/495,206 patent/US20040238481A1/en not_active Abandoned
- 2002-11-13 CA CA002464423A patent/CA2464423A1/en not_active Abandoned
- 2002-11-13 JP JP2003544243A patent/JP2005509746A/ja active Pending
- 2002-11-13 CN CNB028225864A patent/CN100497748C/zh not_active Expired - Lifetime
- 2002-11-13 KR KR1020047007132A patent/KR20050044404A/ko not_active Withdrawn
- 2002-11-13 EP EP02789648A patent/EP1446514A4/en not_active Withdrawn
- 2002-11-13 TW TW091133283A patent/TWI275452B/zh active
- 2002-11-13 WO PCT/US2002/036567 patent/WO2003042433A1/en not_active Application Discontinuation
-
2006
- 2006-06-15 JP JP2006165966A patent/JP2006291361A/ja active Pending
- 2006-07-11 JP JP2006190757A patent/JP2006316352A/ja active Pending
- 2006-08-24 JP JP2006227781A patent/JP2007016320A/ja active Pending
- 2006-10-17 JP JP2006282312A patent/JP2007051376A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW200300376A (en) | 2003-06-01 |
| TWI275452B (en) | 2007-03-11 |
| WO2003042433A1 (en) | 2003-05-22 |
| JP2006316352A (ja) | 2006-11-24 |
| JP2007051376A (ja) | 2007-03-01 |
| CN1585835A (zh) | 2005-02-23 |
| EP1446514A4 (en) | 2007-11-28 |
| JP2007016320A (ja) | 2007-01-25 |
| KR20050044404A (ko) | 2005-05-12 |
| JP2005509746A (ja) | 2005-04-14 |
| JP2006291361A (ja) | 2006-10-26 |
| CN100497748C (zh) | 2009-06-10 |
| US20040238481A1 (en) | 2004-12-02 |
| EP1446514A1 (en) | 2004-08-18 |
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