CA2464423A1 - Electropolishing assembly and methods for electropolishing conductive layers - Google Patents

Electropolishing assembly and methods for electropolishing conductive layers Download PDF

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Publication number
CA2464423A1
CA2464423A1 CA002464423A CA2464423A CA2464423A1 CA 2464423 A1 CA2464423 A1 CA 2464423A1 CA 002464423 A CA002464423 A CA 002464423A CA 2464423 A CA2464423 A CA 2464423A CA 2464423 A1 CA2464423 A1 CA 2464423A1
Authority
CA
Canada
Prior art keywords
wafer
nozzle
electrolyte fluid
fluid
shroud
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002464423A
Other languages
English (en)
French (fr)
Inventor
Hui Wang
Peihaur Yih
Muhammed Afnan
Voha Nuch
Felix Gutman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2464423A1 publication Critical patent/CA2464423A1/en
Abandoned legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CA002464423A 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers Abandoned CA2464423A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US33241701P 2001-11-13 2001-11-13
US60/332,417 2001-11-13
US37256702P 2002-04-14 2002-04-14
US60/372,567 2002-04-14
PCT/US2002/036567 WO2003042433A1 (en) 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers

Publications (1)

Publication Number Publication Date
CA2464423A1 true CA2464423A1 (en) 2003-05-22

Family

ID=26988208

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002464423A Abandoned CA2464423A1 (en) 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers

Country Status (8)

Country Link
US (1) US20040238481A1 (enrdf_load_stackoverflow)
EP (1) EP1446514A4 (enrdf_load_stackoverflow)
JP (5) JP2005509746A (enrdf_load_stackoverflow)
KR (1) KR20050044404A (enrdf_load_stackoverflow)
CN (1) CN100497748C (enrdf_load_stackoverflow)
CA (1) CA2464423A1 (enrdf_load_stackoverflow)
TW (1) TWI275452B (enrdf_load_stackoverflow)
WO (1) WO2003042433A1 (enrdf_load_stackoverflow)

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JP2005120464A (ja) * 2003-09-26 2005-05-12 Ebara Corp 電解加工装置及び電解加工方法
US7224456B1 (en) * 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
WO2007035408A1 (en) * 2005-09-19 2007-03-29 Applied Materials, Inc. Method for stabilized polishing process
US7837850B2 (en) * 2005-09-28 2010-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating systems and methods
US20070181441A1 (en) * 2005-10-14 2007-08-09 Applied Materials, Inc. Method and apparatus for electropolishing
JP5012252B2 (ja) 2007-06-25 2012-08-29 ヤマハ株式会社 磁気データ処理装置、方法およびプログラム
DE102007044091A1 (de) * 2007-09-14 2009-03-19 Extrude Hone Gmbh Verfahren und Vorrichtung zur elektochemischen Bearbeitung
US8496511B2 (en) * 2010-07-15 2013-07-30 3M Innovative Properties Company Cathodically-protected pad conditioner and method of use
US9255339B2 (en) * 2011-09-19 2016-02-09 Fei Company Localized, in-vacuum modification of small structures
KR101300325B1 (ko) * 2011-12-21 2013-08-28 삼성전기주식회사 기판 도금 장치 및 그 제어 방법
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
CN103590092B (zh) * 2012-08-16 2017-05-10 盛美半导体设备(上海)有限公司 一种电化学抛光/电镀装置及方法
TWI529893B (zh) * 2012-09-01 2016-04-11 萬國半導體股份有限公司 帶有底部金屬基座的半導體器件及其製備方法
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CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备(上海)有限公司 电化学抛光供液装置
TWI647343B (zh) * 2014-05-16 2019-01-11 盛美半導體設備(上海)有限公司 Apparatus and method for electroplating or electropolishing bracts
CN105316755B (zh) * 2014-07-29 2019-06-25 盛美半导体设备(上海)有限公司 电化学抛光设备
CN105312999A (zh) * 2014-07-29 2016-02-10 盛美半导体设备(上海)有限公司 无应力抛光设备及其工艺腔体
CN104241159B (zh) * 2014-09-19 2018-04-03 中海阳能源集团股份有限公司 太阳能发电支架液体镀层及测量一体装置
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN106567130A (zh) * 2015-10-10 2017-04-19 盛美半导体设备(上海)有限公司 一种改善晶圆粗糙度的方法
CN105780101B (zh) * 2016-01-27 2018-06-26 杨继芳 一种新型电解抛光设备
CN105742213B (zh) * 2016-03-07 2019-03-12 京东方科技集团股份有限公司 湿法刻蚀设备及湿法刻蚀方法
WO2018093958A1 (en) * 2016-11-15 2018-05-24 Postprocess Technologies Inc. Self-modifying process for rotational support structure removal in 3d printed parts using calibrated resonant frequency
CN106352782A (zh) * 2016-11-24 2017-01-25 中国航空工业集团公司金城南京机电液压工程研究中心 一种高温电涡流传感器及制作方法
CN106625033B (zh) * 2016-12-09 2018-12-18 天津津航技术物理研究所 一种确定单点金刚石车削刀痕抛光去除特性的方法
JP6431128B2 (ja) * 2017-05-15 2018-11-28 エーシーエム リサーチ (シャンハイ) インコーポレーテッド ウェハのメッキおよび/または研磨のための装置および方法
CN109423688B (zh) * 2017-08-31 2022-03-22 深圳市水佳鑫科技有限公司 电化学处理液循环系统及设备
CN111250805A (zh) * 2020-03-20 2020-06-09 南京航空航天大学 金属粗糙表面的飞行式电解铣削整平方法
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Also Published As

Publication number Publication date
TW200300376A (en) 2003-06-01
TWI275452B (en) 2007-03-11
WO2003042433A1 (en) 2003-05-22
JP2006316352A (ja) 2006-11-24
JP2007051376A (ja) 2007-03-01
CN1585835A (zh) 2005-02-23
EP1446514A4 (en) 2007-11-28
JP2007016320A (ja) 2007-01-25
KR20050044404A (ko) 2005-05-12
JP2005509746A (ja) 2005-04-14
JP2006291361A (ja) 2006-10-26
CN100497748C (zh) 2009-06-10
US20040238481A1 (en) 2004-12-02
EP1446514A1 (en) 2004-08-18

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Legal Events

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FZDE Discontinued